专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20080283859A1 LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US20080283859A1
公开(公告)日：2008-11-20
申请号：US12057887
申请日：2008-03-28
申请人： Shih-Peng CHEN , Ching-Chuan Shiue , Chao-Min Chen , Horng-Jou Wang , Huang-Kun Chen
发明人： Shih-Peng CHEN , Ching-Chuan Shiue , Chao-Min Chen , Horng-Jou Wang , Huang-Kun Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/22 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译：发光二极管（LED）装置包括外延多层，微/纳粗糙层和抗反射层。外延层多层具有第一半导体层，有源层和第二半导体层。微/纳米坚固层设置在外延多层的第一半导体层上。防反射层设置在微/纳米坚固层上。此外，还公开了一种LED装置的制造方法。

2. 发明申请

US20080296598A1 CURRENT SPREADING LAYER WITH MICRO/NANO STRUCTURE, LIGHT-EMITTING DIODE APPARATUS AND ITS MANUFACTURING METHOD 审中-公开
标题翻译：微型/纳米结构的电流传播层，发光二极管装置及其制造方法
公开(公告)号：US20080296598A1
公开(公告)日：2008-12-04
申请号：US12029985
申请日：2008-02-12
申请人： Horng-Jou WANG , Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
发明人： Horng-Jou WANG , Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/44 , H01L33/22 , H01L33/42 , H01L33/64 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes an epitaxial layer and a current spreading layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed on the first semiconductor layer of the epitaxial layer and has a micro/nano roughing structure layer and a transparent conductive layer. The micro/nano roughing structure layer has a plurality of hollow parts, and the transparent conductive layer covers a surface of the micro/nano roughing structure layer and is filled within the hollow parts. In addition, a manufacturing method of the LED apparatus and a current spreading layer with a micro/nano structure are also disclosed.
摘要翻译：发光二极管（LED）装置包括外延层和电流扩展层。外延层具有第一半导体层，有源层和第二半导体层。电流扩散层设置在外延层的第一半导体层上，并具有微/纳粗粗化结构层和透明导电层。微/纳米粗加工结构层具有多个中空部分，透明导电层覆盖微/纳粗粗化结构层的表面，并填充在中空部分内。此外，还公开了LED装置的制造方法和具有微/纳米结构的电流扩展层。

3. 发明授权

US07910941B2 Light-emitting diode apparatus and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US07910941B2
公开(公告)日：2011-03-22
申请号：US12057887
申请日：2008-03-28
申请人： Shih-Peng Chen , Ching-Chuan Shiue , Chao-Min Chen , Horng-Jou Wang , Huang-Kun Chen
发明人： Shih-Peng Chen , Ching-Chuan Shiue , Chao-Min Chen , Horng-Jou Wang , Huang-Kun Chen
IPC分类号： H01L33/60
CPC分类号： H01L33/44 , H01L33/22 , H01L2933/0091
摘要： A light-emitting diode (LED) apparatus includes an epitaxial multilayer, a micro/nano rugged layer and an anti-reflection layer. The epitaxial multilayer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The micro/nano rugged layer is disposed on the first semiconductor layer of the epitaxial multilayer. The anti-reflection layer is disposed on the micro/nano rugged layer. In addition, a manufacturing method of the LED apparatus is also disclosed.
摘要翻译：发光二极管（LED）装置包括外延多层，微/纳粗糙层和抗反射层。外延层多层具有第一半导体层，有源层和第二半导体层。微/纳米坚固层设置在外延多层的第一半导体层上。防反射层设置在微/纳米坚固层上。此外，还公开了一种LED装置的制造方法。

4. 发明申请

US20090152583A1 LIGHT-EMITTING DIODE DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：发光二极管器件及其制造方法
公开(公告)号：US20090152583A1
公开(公告)日：2009-06-18
申请号：US12269407
申请日：2008-11-12
申请人： Chao-Min Chen , Shih-Peng Chen , Ching-Chuan Shiue , Huang-Kun Chen
发明人： Chao-Min Chen , Shih-Peng Chen , Ching-Chuan Shiue , Huang-Kun Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/14 , H01L33/10 , H01L33/382
摘要： A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.
摘要翻译：发光二极管器件包括外延层，电流阻挡层和电流扩散层。电流阻挡层设置在外延层的一侧上并与外延层的一部分接触。电流扩散层设置在外延层的一侧并与电流阻挡层的至少一部分接触。

5. 发明授权

US08048696B2 Light emitting diode devices and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US08048696B2
公开(公告)日：2011-11-01
申请号：US12068554
申请日：2008-02-07
申请人： Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
发明人： Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
IPC分类号： H01L21/00
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/60 , H01L33/641
摘要： A light emitting diode (LED) device includes a stacked epitaxial structure, a heat-conductive plate and a seed layer. The stacked epitaxial structure sequentially includes a first semiconductor layer (N—GaN), a light emitting layer, and a second semiconductor layer (P—GaN). The heat-conductive plate is disposed on the first semiconductor layer, and the seed layer is disposed between the first semiconductor layer and the heat-conductive plate. Also, the present invention discloses a manufacturing method thereof including the steps of: forming at least one temporary substrate, which is made by a curable polymer material, on an LED device, and forming at least a heat-conductive plate on the LED device.
摘要翻译：发光二极管（LED）装置包括堆叠的外延结构，导热板和种子层。堆叠的外延结构依次包括第一半导体层（N-GaN），发光层和第二半导体层（P-GaN）。导热板设置在第一半导体层上，种子层设置在第一半导体层和导热板之间。另外，本发明还公开了一种制造方法，其特征在于，包括以下步骤：在LED装置上形成至少一个由可固化聚合物材料制成的临时衬底，并且至少在所述LED器件上形成导热板。

6. 发明申请

US20090090930A1 EPITAXIAL SUBSTRATE AND MANUFACTURING METHOD THEREOF AND MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS 审中-公开
标题翻译：发光二极管装置的外延基板及其制造方法及其制造方法
公开(公告)号：US20090090930A1
公开(公告)日：2009-04-09
申请号：US12198331
申请日：2008-08-26
申请人： Shih-Peng Chen , Ching-Chuan Shiue , Chao-Min Chen , Cheng-Huang Kuo , Huang-Kun Chen
发明人： Shih-Peng Chen , Ching-Chuan Shiue , Chao-Min Chen , Cheng-Huang Kuo , Huang-Kun Chen
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L33/0079 , B82Y20/00 , H01L33/12
摘要： A manufacturing method of an epitaxial substrate includes the steps of: forming a sacrificial layer, which has a first micro/nano structure, on a substrate; and forming a buffer layer on the sacrificial layer. The sacrificial layer comprises a plurality of micro/nano particles, and the first micro/nano structure is formed after the plurality of micro/nano particles are removed. An epitaxial substrate and a manufacturing method of a light emitting diode (LED) apparatus are also disclosed.
摘要翻译：外延衬底的制造方法包括以下步骤：在衬底上形成具有第一微/纳米结构的牺牲层; 以及在所述牺牲层上形成缓冲层。牺牲层包括多个微/纳米颗粒，并且在去除多个微/纳米颗粒之后形成第一微/纳米结构。还公开了一种外延衬底和发光二极管（LED）装置的制造方法。

7. 发明申请

US20080237620A1 LIGHT EMITTING DIODE APPARATUS 审中-公开
标题翻译：发光二极管装置
公开(公告)号：US20080237620A1
公开(公告)日：2008-10-02
申请号：US12029938
申请日：2008-02-12
申请人： Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
发明人： Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/405 , H01L33/42 , H01L33/64
摘要： A light emitting diode apparatus includes a heat dissipating substrate, a composite layer, an epitaxial layer, a first electrode and a second electrode. The composite layer includes a reflective layer, a transparent conductive layer and a patterned insulating thermoconductive layer, which is disposed between the reflective layer and the transparent conductive layer. The composite layer is disposed between the heat dissipating substrate and the epitaxial layer and allows currents to concentrate to the reflective layer or the transparent conductive layer and then to be diffused evenly through the transparent conductive layer. The epitaxial layer includes a first semiconductor layer electrically connected with the first electrode, an active layer and a second semiconductor layer electrically connected with the second electrode.
摘要翻译：发光二极管装置包括散热基板，复合层，外延层，第一电极和第二电极。复合层包括设置在反射层和透明导电层之间的反射层，透明导电层和图案化的绝缘导热层。复合层设置在散热衬底和外延层之间，并且允许电流集中到反射层或透明导电层，然后均匀地扩散通过透明导电层。外延层包括与第一电极电连接的第一半导体层，与第二电极电连接的有源层和第二半导体层。

8. 发明授权

US07816703B2 Light-emitting diode device and manufacturing method thereof 有权
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US07816703B2
公开(公告)日：2010-10-19
申请号：US12269407
申请日：2008-11-12
申请人： Chao-Min Chen , Shih-Peng Chen , Ching-Chuan Shiue , Huang-Kun Chen
发明人： Chao-Min Chen , Shih-Peng Chen , Ching-Chuan Shiue , Huang-Kun Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/14 , H01L33/10 , H01L33/382
摘要： A light-emitting diode device includes an epitaxial layer, a current blocking layer and a current spreading layer. The current blocking layer is disposed on one side of the epitaxial layer and contacts with a portion of the epitaxial layer. The current spreading layer is disposed on one side of the epitaxial layer and contacts with at least a portion of the current blocking layer.
摘要翻译：发光二极管器件包括外延层，电流阻挡层和电流扩散层。电流阻挡层设置在外延层的一侧上并与外延层的一部分接触。电流扩散层设置在外延层的一侧并与电流阻挡层的至少一部分接触。

9. 发明申请

US20090050909A1 LIGHT-EMITTING DIODE APPARATUS AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：发光二极管装置及其制造方法
公开(公告)号：US20090050909A1
公开(公告)日：2009-02-26
申请号：US12178975
申请日：2008-07-24
申请人： Chao-Min CHEN , Shih-Peng Chen , Ching-Chuan Shiue , Huang-Kun Chen
发明人： Chao-Min CHEN , Shih-Peng Chen , Ching-Chuan Shiue , Huang-Kun Chen
IPC分类号： H01L33/00 , H01L21/00
CPC分类号： H01L33/20 , H01L33/44
摘要： A light-emitting diode (LED) apparatus includes an epitaxial layer and an etching mask layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer in sequence. The etching mask layer is disposed on the epitaxial layer and has a plurality of hollows. The second semiconductor layer includes a roughing structure.
摘要翻译：发光二极管（LED）装置包括外延层和蚀刻掩模层。该外延层依次具有第一半导体层，有源层和第二半导体层。蚀刻掩模层设置在外延层上并具有多个中空部。第二半导体层包括粗加工结构。

10. 发明申请

US20090014747A1 MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS 有权
标题翻译：发光二极管装置的制造方法
公开(公告)号：US20090014747A1
公开(公告)日：2009-01-15
申请号：US12143486
申请日：2008-06-20
申请人： Ching-Chuan SHIUE , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
发明人： Ching-Chuan SHIUE , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
IPC分类号： H01L33/00
CPC分类号： H01L33/0079 , H01L33/44 , H01L33/64 , H01L33/641
摘要： A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.
摘要翻译：发光二极管（LED）装置的制造方法包括以下步骤：在LED装置上形成由可固化材料制成的至少一个暂时基板; 以及在所述LED器件上形成至少一个导热衬底。制造方法不需要通过使用粘合层将半导体结构粘合到另一基板上的步骤，并且可以在去除临时基板之后使装置顺序分离，从而获得多个LED装置。结果，可以防止由于切割过程导致的电流泄漏的问题，从而降低生产成本并提高产量。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式