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1. 发明授权

US5395802A Process for making semiconductor acceleration sensor having anti-etching layer 失效
标题翻译：具有防腐蚀层的半导体加速度传感器的制造方法
公开(公告)号：US5395802A
公开(公告)日：1995-03-07
申请号：US37335
申请日：1993-03-26
申请人： Shigeyuki Kiyota , Hideo Muro
发明人： Shigeyuki Kiyota , Hideo Muro
IPC分类号： B81B3/00 , G01P15/08 , G01P15/12 , H01L29/84 , H01L21/465
CPC分类号： B81C1/00666 , B81C1/00595 , G01P15/0802 , G01P15/123 , B81B2201/0235 , B81B2203/0118 , B81B2203/0315 , B81C2201/014 , B81C2201/0177 , G01P2015/0828 , Y10S438/924
摘要： A semiconductor acceleration transducer is fabricated so that the semiconductor beam and the piezoelectric transducing element are accurately positioned relative to each other, and the impact resistance is improved. The fabrication process comprises a wafer preparing step for forming a buried layer between a substrate of a first conductivity type and an epitaxial layer of a second conductivity type, a doping step for forming a diffusion region of the first conductivity type in the epitaxial layer, and an etching step for removing unwanted portions of the substrate and the diffusion region from the bottom of the substrate to shape the beam supporting portion serving as a seismic mass. The buried layer is formed at such a position that the shape and position of the beam is determined by the buried layer. The buried layer may be a second conductivity type layer to determine the contour of the beam by stopping the etching process or may be a first conductivity type layer which is etched away to determine the contour of the beam with its diffusion contour.
摘要翻译：制造半导体加速度传感器，使得半导体束和压电换能元件相对于彼此精确地定位，并且提高了抗冲击性。制造工艺包括用于在第一导电类型的衬底和第二导电类型的外延层之间形成掩埋层的晶片准备步骤，用于在外延层中形成第一导电类型的扩散区域的掺杂步骤，以及蚀刻步骤，用于从衬底的底部除去衬底和扩散区的不需要的部分，以形成用作抗震质量的梁支撑部分。掩埋层形成在这样的位置，即由掩埋层决定光束的形状和位置。掩埋层可以是第二导电类型层，以通过停止蚀刻工艺来确定光束的轮廓，或者可以是蚀刻掉的第一导电类型层，以确定具有其扩散轮廓的光束的轮廓。

2. 发明授权

US6087877A Integrated circuit having surge protection circuit 失效
标题翻译：具有浪涌保护电路的集成电路
公开(公告)号：US6087877A
公开(公告)日：2000-07-11
申请号：US110332
申请日：1998-07-06
申请人： Tomohiko Gonda , Shigeyuki Kiyota
发明人： Tomohiko Gonda , Shigeyuki Kiyota
IPC分类号： H01L27/04 , H01L21/822 , H02H7/20 , H02H9/04 , H03F1/52 , H03K5/08 , H03K17/082
CPC分类号： H03K17/0822 , H03K5/08
摘要： A trailing edge of a control signal of a transistor controller for controlling an output transistor is detected by an edge detector of a clamp controlling circuit. A surge voltage from a back electromotive voltage induced in an inductance L1 is absorbed from the output transistor, only for a given period immediately after the solenoid is turned off, by turning a switching transistor into an on-state by a timer to force a clamping circuit into conduction. At a normal operation, since the clamping circuit is cut off from an output terminal, the clamping voltage can be set in a manner to reduce to a normal voltage in an IGN-line. Therefore, a peak power value of a power loss caused by the surge voltage at the output transistor can be reduced, whereby generation of heat at the output transistor can be reduced. Therefore, the chip size of the power IC can be reduced.
摘要翻译：用于控制输出晶体管的晶体管控制器的控制信号的后沿由钳位控制电路的边沿检测器检测。在电感L1感应的反电动势电压的浪涌电压从输出晶体管吸收，仅在电磁阀断开之后的给定时间内，通过定时器将开关晶体管转换为导通状态，以强制钳位电路导通。在正常操作中，由于钳位电路与输出端子断开，因此可以将钳位电压设定为降低IGN线路中的正常电压。因此，能够降低由输出晶体管的浪涌电压引起的功率损耗的峰值功率值，能够降低输出晶体管的发热量。因此，可以降低功率IC的芯片尺寸。

3. 发明授权

US5903855A Acceleration sensor 失效
标题翻译：加速度传感器
公开(公告)号：US5903855A
公开(公告)日：1999-05-11
申请号：US760252
申请日：1996-12-05
申请人： Shigeyuki Kiyota
发明人： Shigeyuki Kiyota
IPC分类号： G01P15/12 , G01P21/00 , G01P15/00
CPC分类号： G01P21/00 , G01P15/123
摘要： An acceleration sensor includes a sensing unit for detecting impact acceleration and a signal processing unit for measuring the magnitude of the detected acceleration. The signal processing unit has functions of calculating the sensitivity of the sensing unit when specific acceleration is applied to the sensing unit in an inspection stage, storing the calculated sensitivity, and correcting the output of the sensing unit according to the stored sensitivity in actual operation.
摘要翻译：加速度传感器包括用于检测冲击加速度的感测单元和用于测量检测到的加速度的大小的信号处理单元。信号处理单元具有如下功能：当在检测级中对感测单元施加特定加速度时，计算感测单元的灵敏度，存储计算出的灵敏度，并根据实际操作中存储的灵敏度对感测单元的输出进行校正。

4. 发明授权

US5909112A Configuration and test process for semiconductor overcurrent detecting circuit 失效
标题翻译：半导体过电流检测电路的配置和测试过程
公开(公告)号：US5909112A
公开(公告)日：1999-06-01
申请号：US42695
申请日：1998-03-17
申请人： Shigeyuki Kiyota , Hironori Saito
发明人： Shigeyuki Kiyota , Hironori Saito
IPC分类号： H02H3/08 , G01R19/165 , G01R31/28 , G05F1/573 , H02H3/087 , G05F1/56 , G05F3/16
CPC分类号： G05F1/573
摘要： A MOSFET integrated circuit device has a main MOSFET, a mirror MOSFET, a current sensing resistor, a reference voltage source, a comparator for detecting an overcurrent condition by comparing a potential at the source of the mirror MOSFET with a reference potential of the reference voltage source, and a control circuit section for turning off the main MOSFET in case of the overcurrent condition. The device further comprises a group of pads allowing a test of the overcurrent detecting function by application of a test current much lower than an overcurrent. The pad group comprises a first pad for measuring the potential at the source of the mirror MOSFET, a second pad for measuring the reference potential and a third pad for detecting a change in the output of the comparator.
摘要翻译： MOSFET集成电路器件具有主MOSFET，反射镜MOSFET，电流感测电阻器，参考电压源，用于通过将反射镜MOSFET的源极处的电位与参考电压的参考电位进行比较来检测过电流状态的比较器源极和用于在过电流状态下关断主MOSFET的控制电路部分。该装置还包括一组衬垫，其允许通过施加远低于过电流的测试电流来测试过电流检测功能。焊盘组包括用于测量反射镜MOSFET源极处的电位的第一焊盘，用于测量参考电位的第二焊盘和用于检测比较器的输出变化的第三焊盘。

5. 发明授权

US5614753A Semiconductor device with leakage current prevention 失效
标题翻译：具有防漏电流的半导体器件
公开(公告)号：US5614753A
公开(公告)日：1997-03-25
申请号：US575904
申请日：1995-12-20
申请人： Susumu Uchikoshi , Shigeyuki Kiyota , Yasukazu Iwasaki , Takatoshi Noguchi , Makoto Uchiyama
发明人： Susumu Uchikoshi , Shigeyuki Kiyota , Yasukazu Iwasaki , Takatoshi Noguchi , Makoto Uchiyama
IPC分类号： H01L21/822 , G01P15/08 , H01L27/04 , H01L29/82
CPC分类号： G01P15/0802
摘要： A semiconductor device is produced through electrolytic etching process. The device comprises a P-type silicon substrate. An N-type epitaxial layer is formed on the silicon substrate. P-type regions are defined in the N-type epitaxial layer. N-type regions are defined in some of the P-type regions. A first wiring layer connects to predetermined ones of the P-type regions. A second wiring layer connects to predetermined ones of the N-type regions. The semiconductor device has a given part which has such a possibility that a predetermined magnitude of leakage current flows therethrough between the first and second wiring layers when subjected to the electrolytic etching process. The semiconductor device further has a circuit which is electrically connected to one of the first and second wiring layers. The circuit is capable of removing the possibility of the leakage current flow through the given part when opened.
摘要翻译：通过电解蚀刻工艺制造半导体器件。该器件包括P型硅衬底。在硅衬底上形成N型外延层。 P型区域被限定在N型外延层中。在一些P型区域中定义了N型区域。第一布线层连接到预定的P型区域。第二布线层连接到预定的N型区域。半导体器件具有给定的部分，其具有在进行电解蚀刻处理时在第一和第二布线层之间流过预定大小的漏电流的可能性。半导体器件还具有电连接到第一和第二布线层之一的电路。该电路能够消除打开时泄漏电流流经给定部件的可能性。

6. 发明授权

US06838803B2 System for detecting abrasion of brush of direct current motor 失效
标题翻译：直流电机电刷磨损检测系统
公开(公告)号：US06838803B2
公开(公告)日：2005-01-04
申请号：US10330169
申请日：2002-12-30
申请人： Shigeyuki Kiyota
发明人： Shigeyuki Kiyota
IPC分类号： B60R16/02 , B60K6/44 , B60K6/52 , B60K17/04 , B60L3/00 , B60W10/08 , B60W20/00 , G01R31/34 , H02P7/06 , H02K39/38
CPC分类号： B60L3/00 , B60L2260/56 , G01R31/343 , Y10S903/916
摘要： A motor vehicle has road wheels driven by a direct current motor that has a brush installed therein. A system for detecting abrasion of the brush comprises a clutch arranged between the road wheel and the direct current motor. The clutch is of a wet type so that in ON condition thereof, drive and driven members thereof are engaged with each other causing transmission of a torque of the motor to the road wheel and in OFF condition thereof, the drive and driven members thereof are disengaged from each other permitting a certain but small transmission of a torque of the road wheels toward the motor due to a viscosity possessed by oil in the clutch. A rotation speed sensor is provided that detects a rotation speed of the motor. A control unit is provided that issues a brush abrasion representing signal based on the rotation speed of the motor detected under OFF condition of the clutch.

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