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1. 发明授权

US4775916A Pressure contact semiconductor device 失效
标题翻译：压接半导体器件
公开(公告)号：US4775916A
公开(公告)日：1988-10-04
申请号：US898597
申请日：1986-08-21
申请人： Shigeyasu Kouzuchi , Shuroku Sakurada , Tadashi Sakaue , Masafumi Ono
发明人： Shigeyasu Kouzuchi , Shuroku Sakurada , Tadashi Sakaue , Masafumi Ono
IPC分类号： H01L21/52 , H01L21/58 , H01L23/051 , H01L23/48 , H01L29/74 , H01L23/32 , H01L23/40
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01018 , H01L2924/01029 , H01L2924/01042 , H01L2924/01047 , H01L2924/01074 , H01L2924/1301 , H01L2924/351
摘要： A pressure contact semiconductor device has a semiconductor substrate disposed on a metal post electrode through metal electrode plate, an insulating ring engaged with the periphery of the metal post electrode extends to the periphery of the metal electrode plate and is brought into contact therewith at a certain height with a sufficient contact pressure. The semiconductor substrate is positioned precisely with respect to the metal post electrode so that a gate electrode ring is precisely positioned on a gate electrode film formed on the upper surface of the semiconductor substrate.
摘要翻译：压接半导体器件具有通过金属电极板设置在金属柱电极上的半导体衬底，与金属柱电极的周边接合的绝缘环延伸到金属电极板的周边，并以一定的方式与其接触高度有足够的接触压力。半导体衬底相对于金属柱电极精确定位，使得栅电极环精确地定位在形成在半导体衬底的上表面上的栅电极膜上。

2. 发明授权

US4868625A Gate turn-off thyristor of multi-emitter type 失效
标题翻译：多发射型闸极关断晶闸管
公开(公告)号：US4868625A
公开(公告)日：1989-09-19
申请号：US71153
申请日：1987-07-08
申请人： Toshihide Ujihara , Shuroku Sakurada , Tadashi Sakaue , Shuji Musha
发明人： Toshihide Ujihara , Shuroku Sakurada , Tadashi Sakaue , Shuji Musha
IPC分类号： H01L29/08 , H01L29/74 , H01L29/744
CPC分类号： H01L29/0834 , H01L29/744
摘要： A gate turn-off (GTO) thyristor has a plurality of unit GTO thyristors of strip-like configuration in a same semiconductor substrate, each unit GTO thyristor being constructed of an N emitter layer, P base layer, N base layer and P emitter layer. The P base and N base layers are shared in common for all the unit GTO thyristors which are formed in a multi-ring configuration. The exposed area of the P emitter layer of a unit GTO thyristor located far from the gate signal input area is made smaller than that of the P emitter layer of a unit GTO thyristor located relatively closer to the gate signal input area.
摘要翻译：栅极关断（GTO）晶闸管在相同的半导体衬底中具有多个带状结构的单元GTO晶闸管，每个单元GTO晶闸管由N个发射极层，P基极层，N个基极层和P个发射极层。对于以多环形式形成的所有单元GTO晶闸管，P基极和N个基极层共同共享。远离栅极信号输入区域的单元GTO晶闸管的P发射极层的露出面积比位于相对靠近栅极信号输入区域的单位GTO晶闸管的P发射极层的露出面积小。

3. 发明授权

US5051806A Gate turn-off thyristor of multi-emitter type 失效
标题翻译：多发射型闸极关断晶闸管
公开(公告)号：US5051806A
公开(公告)日：1991-09-24
申请号：US385378
申请日：1989-07-27
申请人： Toshihide Ujihara , Shuroku Sakurada , Tadashi Sakaue , Shuji Musha
发明人： Toshihide Ujihara , Shuroku Sakurada , Tadashi Sakaue , Shuji Musha
IPC分类号： H01L29/08 , H01L29/74 , H01L29/744
CPC分类号： H01L29/0834 , H01L29/744
摘要： A gate turn-off (GTO) thyristor has a plurality of unit GTO thyristors of strip-like configuration in a same semiconductor substrate, each unit GTO thyristor being constructed of an N emitter layer, P base layer, N base layer and P emitter layer. The P base and N base layers are shared in common for all the unit GTO thyristors which are formed in a multi-ring configuration. The exposed area of the P emitter layer of a unit GTO thyristor located far from the gate signal input area is made smaller than that of the P emitter layer of a unit GTO thyristor located relatively close to the gate signal input area.

4. 发明授权

US4653329A Pressure detector and strain member therefor 失效
标题翻译：压力检测器及应变件
公开(公告)号：US4653329A
公开(公告)日：1987-03-31
申请号：US781986
申请日：1985-09-30
申请人： Tatsuo Sagara , Tadashi Sakaue
发明人： Tatsuo Sagara , Tadashi Sakaue
IPC分类号： G01L1/22 , G01L9/00 , G01L9/04
CPC分类号： G01L9/006 , G01L1/2293 , G01L9/0052
摘要： A circular diaphragm with an annular thin portion has a smooth front surface, and coaxial but spaced inner and outer cylinders are secured to a rear surface of the diaphragm across said annular thin portion. Opposite edges of a rectangular strain member which is operatively connected to the disphragm through the inner cylinder are secured to a free end of the outer cylinder.
摘要翻译：具有环形薄部分的圆形隔膜具有光滑的前表面，并且同轴但间隔开的内和外圆筒通过所述环形薄部分固定到隔膜的后表面。通过内筒可操作地连接到双臂的矩形应变构件的相对边缘被固定到外筒的自由端。

5. 发明授权

US5003369A Thyristor of overvoltage self-protection type 失效
标题翻译：过电压自保护型晶闸管
公开(公告)号：US5003369A
公开(公告)日：1991-03-26
申请号：US181719
申请日：1988-04-14
申请人： Kazuyoshi Kanda , Katsumi Akabane , Tadashi Sakaue
发明人： Kazuyoshi Kanda , Katsumi Akabane , Tadashi Sakaue
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L29/7424 , H01L31/1113
摘要： A thyristor of the overvoltage self-protection type capable of performing a turn-on operation certainly without being damaged even when an overvoltage is applied across the thyristor is disclosed in which a P-base layer is provided with a recess having such a depth as to generate an avalanche in the vicinity of the bottom of the recess when the overvoltage is applied across the thyristor, and a portion of a P.sup.+ -layer formed on the surface of the recess is kept in contact with an N-emitter layer.

6. 发明授权

US08066597B2 Electrically operated derailleur with force overload protection 有权
标题翻译：带力过载保护的电动拨链器
公开(公告)号：US08066597B2
公开(公告)日：2011-11-29
申请号：US11686927
申请日：2007-03-15
申请人： Tadashi Sakaue
发明人： Tadashi Sakaue
IPC分类号： F16H61/00
CPC分类号： B62M9/122
摘要： A derailleur comprises a base member, a movable member; a linkage mechanism including a link member coupled to the base member and to the movable member so that the movable member moves relative to the base member, a motor including a drive member, and a driven member driven by the drive member. The driven member is coupled to the link member so that the link member moves relative to the base member to move the movable member relative to the base member. A clutch is disposed in a power transmission path between the motor and the link member.
摘要翻译：拨链器包括基座部件，可动部件，连杆机构，其包括联接到所述基座构件和所述可动构件的连杆构件，使得所述可动构件相对于所述基座构件移动;马达，其包括驱动构件，以及由所述驱动构件驱动的从动构件。从动构件联接到连杆构件，使得连杆构件相对于基座构件移动，以使可移动构件相对于基座构件移动。离合器设置在电动机和连杆构件之间的动力传递路径中。

7. 发明授权

US4057825A Semiconductor device with composite metal heat-radiating plate onto which semiconductor element is soldered 失效
标题翻译：具有复合金属散热板的半导体器件，其上焊接有半导体元件
公开(公告)号：US4057825A
公开(公告)日：1977-11-08
申请号：US701809
申请日：1976-07-01
申请人： Kazutoyo Narita , Tadashi Sakaue , Yuzi Niino
发明人： Kazutoyo Narita , Tadashi Sakaue , Yuzi Niino
IPC分类号： H01L23/049 , H01L23/373 , H01L23/433 , H01L25/11 , H01L23/02 , H01L23/28
CPC分类号： H01L24/01 , H01L23/049 , H01L23/3735 , H01L23/4334 , H01L25/115 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/12036 , H01L2924/1301 , H01L2924/181
摘要： A semiconductor device has a composite metal heat-radiating plate consisting of, for example, two copper layers for serving as a thermally and electrically conducting medium and an iron layer for giving mechanical strength, interposed between the copper layers, in which the semiconductor element is directly or indirectly, electrically and mechanically coupled by soldering to one of the copper layers.
摘要翻译：半导体器件具有复合金属散热板，该复合金属散热板由例如用作导电和导电介质的两个铜层和用于提供机械强度的铁层组成，插入在铜层之间，其中半导体元件是通过焊接直接或间接地通过焊接电镀和机械耦合到铜层之一。

8. 发明授权

US4305088A Semiconductor device including means for alleviating stress caused by different coefficients of thermal expansion of the device components 失效
标题翻译：半导体器件包括用于减轻由器件部件的不同热膨胀系数引起的应力的装置
公开(公告)号：US4305088A
公开(公告)日：1981-12-08
申请号：US195941
申请日：1980-10-10
申请人： Kazutoyo Narita , Tadashi Sakaue , Noboru Kawasaki , Motoji Nakajima
发明人： Kazutoyo Narita , Tadashi Sakaue , Noboru Kawasaki , Motoji Nakajima
IPC分类号： H01L23/433 , H01L23/49 , H01L25/07 , H01L23/42 , H01L23/44 , H01L23/46
CPC分类号： H01L24/01 , H01L23/4334 , H01L25/072 , H01L2224/45147 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01014 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/10253 , H01L2924/1301 , H01L2924/157 , H01L2924/351
摘要： A semiconductor device comprises a heat-radiating electrode plate, a semiconductor element soldered to the depressed portion formed in the heat-radiating electrode plate, a header lead soldered onto the semiconductor element, a terminal board of insulating material fixed on the heat-radiating electrode plate, and a lead terminal secured to the terminal board and with the one end thereof electrically and mechanically connected to the header lead. The semiconductor device further comprises means for mitigating the transmission to the solder of the stress generated along the length of the header lead by the difference in the coefficient of thermal expansion among the component parts, and means for alleviating the lateral stress generated in the solder by the difference in the coefficient of thermal expansion between the header lead and the semiconductor element. Thus, a semiconductor device is provided which is high in both resistance to thermal fatigue and vibrations, simple in construction and superior in operational efficiency.
摘要翻译：半导体器件包括散热电极板，焊接到形成在散热电极板中的凹陷部分的半导体元件，焊接到半导体元件上的集流管引脚，固定在散热电极上的绝缘材料端子板板和引线端子，其固定到端子板，并且其一端电气和机械地连接到集管引线。半导体器件还包括用于通过部件之间的热膨胀系数的差异减轻沿着集管引线长度产生的应力的焊料传输的装置，以及用于减轻焊料中产生的横向应力的装置，集管引线和半导体元件之间的热膨胀系数的差异。因此，提供了耐热疲劳和振动性高的半导体器件，结构简单且操作效率优异。

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