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1. 发明授权

US5766345A Epitaxial growth method of semiconductor 失效
标题翻译：半导体的外延生长方法
公开(公告)号：US5766345A
公开(公告)日：1998-06-16
申请号：US543283
申请日：1995-10-16
申请人： Shigetaka Tomiya , Kazushi Nakano , Satoshi Ito , Rikako Minatoya
发明人： Shigetaka Tomiya , Kazushi Nakano , Satoshi Ito , Rikako Minatoya
IPC分类号： C30B25/14 , C30B23/02 , H01L21/203 , H01L21/363 , H01L21/365 , H01S5/00 , H01S5/042 , H01S5/22 , H01S5/223 , H01S5/327
CPC分类号： H01L33/28 , C30B23/02 , C30B29/48 , H01L21/02395 , H01L21/02439 , H01L21/02505 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02631 , H01L33/0087 , H01S5/327 , H01S2304/04 , H01S5/0421 , H01S5/2213 , H01S5/2231
摘要： An epitaxial growth method of semiconductor can reliably avoid irregularities from being produced when a II-VI compound semiconductor is grown epitaxially. When this method is applied to a method of manufacturing a semiconductor light-emitting device, it is possible to obtain a semiconductor light-emitting device having a long life and excellent light-emitting characteristic. When a II-VI compound semiconductor is grown epitaxially, a VI/II ratio, i.e., a supplying ratio of VI-group element and II-group element used in the epitaxial growth is selected in a range of from 1.3 to 2.5.
摘要翻译：当外延生长II-VI化合物半导体时，半导体的外延生长方法可以可靠地避免产生不规则性。当将该方法应用于制造半导体发光器件的方法时，可以获得具有长寿命和优异的发光特性的半导体发光器件。当外延生长II-VI化合物半导体时，在外延生长中使用的VI / II比例，即VI族元素和II族元素的供给比选择为1.3〜2.5。

2. 发明授权

US5828086A Semiconductor light emitting device with a Mg superlattice structure 失效
标题翻译：具有Mg超晶格结构的半导体发光器件
公开(公告)号：US5828086A
公开(公告)日：1998-10-27
申请号：US826108
申请日：1997-03-24
申请人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
发明人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
IPC分类号： H01L33/06 , H01L33/28 , H01S5/30 , H01S5/32 , H01S5/347 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01S5/347 , H01S2304/02 , H01S5/3059 , H01S5/3216
摘要： A semiconductor light emitting device ccomprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still anothr semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, a first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
摘要翻译：半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。另一种半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。还有一种半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。缺陷分解层和缺陷阻挡层包括超晶格结构。

3. 发明授权

US5665977A Semiconductor light emitting device with defect decomposing and blocking layers 失效
标题翻译：具有缺陷分解和阻挡层的半导体发光器件
公开(公告)号：US5665977A
公开(公告)日：1997-09-09
申请号：US691536
申请日：1996-08-02
申请人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
发明人： Akira Ishibashi , Satoshi Matsumoto , Masaharu Nagai , Satoshi Ito , Shigetaka Tomiya , Kazushi Nakano , Etsuo Morita
IPC分类号： H01L33/06 , H01L33/28 , H01S5/30 , H01S5/32 , H01S5/347 , H01L33/00
CPC分类号： H01L33/28 , B82Y20/00 , H01L33/06 , H01S5/347 , H01S2304/02 , H01S5/3059 , H01S5/3216
摘要： A semiconductor light emitting device comprises a first cladding layer, an active layer and a second cladding layer which are stacked on a semiconductor substrate. At least a part of the first cladding layer and the second cladding layer has a superlattice structure comprising II-VI compound semiconductor. Another semiconductor light emitting device comprises a first cladding layer, a first guide layer, an active layer, a second guide layer and a second cladding layer which are stacked on semiconductor substrate. At least a part of the first cladding layer, the first guide layer, the second cladding layer and the second guide layer has a superlattice structure. Still another semiconductor light emitting device comprises a defect decomposing layer, a defect blocking layer, first cladding layer, an active layer, a second cladding layer which are stacked on a semiconductor substrate. The defect decomposing layer and the defect blocking layer comprise a superlattice structure.
摘要翻译：半导体发光器件包括堆叠在半导体衬底上的第一覆层，有源层和第二覆层。第一包层和第二包层的至少一部分具有包含II-VI化合物半导体的超晶格结构。另一半导体发光器件包括堆叠在半导体衬底上的第一覆层，第一引导层，有源层，第二引导层和第二覆层。第一包覆层，第一引导层，第二覆盖层和第二引导层的至少一部分具有超晶格结构。另一半导体发光器件包括堆叠在半导体衬底上的缺陷分解层，缺陷阻挡层，第一覆层，有源层，第二覆层。缺陷分解层和缺陷阻挡层包括超晶格结构。

4. 发明授权

US5633514A Semiconductor light emitting device with lattice-matching and lattice-mismatching 失效
标题翻译：具有晶格匹配和晶格失配的半导体发光器件
公开(公告)号：US5633514A
公开(公告)日：1997-05-27
申请号：US570376
申请日：1995-12-11
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of group II elements such as Zn, Hg, Cd, Mg and at least one kind of group VI elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.Aa/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素和至少一种VI族元素的II / VI族化合物半导体制成，作为S，Se，Te。在第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTAAa/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

5. 发明授权

US5567960A II/VI-compound semiconductor light emitting device 失效
标题翻译： II / VI化合物半导体发光器件
公开(公告)号：US5567960A
公开(公告)日：1996-10-22
申请号：US429850
申请日：1995-04-27
申请人： Akira Ishibashi , Satoshi Ito , Hiroyuki Okuyama , Kazushi Nakano , Kenji Kondo , Reiko Takeishi
发明人： Akira Ishibashi , Satoshi Ito , Hiroyuki Okuyama , Kazushi Nakano , Kenji Kondo , Reiko Takeishi
IPC分类号： H01L33/14 , H01L33/20 , H01L33/28 , H01S5/00 , H01S5/327 , H01L33/00 , H01S3/19
CPC分类号： H01L33/28 , H01S5/327
摘要： A lifetime of a II/VI-compound semiconductor light emitting device can be extended. The II/VI-compound semiconductor light emitting device includes an active layer (4) and a p-side cladding layer (6). An active-layer side portion (26) of the p-side cladding layer (6) is formed as a lightly impurity-doped region or a non-doped region.
摘要翻译： II / VI化合物半导体发光器件的寿命可以延长。 II / VI化合物半导体发光器件包括有源层（4）和p侧覆层（6）。 p侧覆层（6）的有源层侧部（26）形成为轻掺杂区域或非掺杂区域。

6. 发明授权

US5872023A Method of fabricating of light emitting device with controlled lattice mismatch 失效
标题翻译：具有受控晶格失配的发光器件的制造方法
公开(公告)号：US5872023A
公开(公告)日：1999-02-16
申请号：US829214
申请日：1997-03-31
申请人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
发明人： Masashi Shiraishi , Satoshi Ito , Kazushi Nakano , Akira Ishibashi , Masao Ikeda , Hiroyuki Okuyama , Katsuhiro Akimoto , Tomonori Hino , Masakazu Ukita
IPC分类号： H01L33/00 , H01L33/28 , H01S5/32 , H01S5/327 , H01S3/19
CPC分类号： H01L33/28 , H01L33/0087 , H01S5/327 , H01S5/3201
摘要： The semiconductor light emitting device includes a semiconductor substrate (1), a first conductivity type first cladding layer (2) deposited on the semiconductor substrate (1), an active layer (4) deposited on the first cladding layer (2), and the second conductivity type second cladding layer (6) deposited on the active layer (4). The first and the second cladding layers (2, 6) are made of the II/VI-compound semiconductors including at least one kind of II group elements such as Zn, Hg, Cd, Mg and at least one kind of VI group elements such as S, Se, Te. The lattice mismatching .DELTA.a/a (%) between at least one of the first cladding layer (2) and the second cladding layer (6) and the substrate is set within the range of -0.9%.ltoreq..DELTA.a/a.ltoreq.0.5% (reference symbols a and a.sub.c represent the lattice constant of the semiconductor substrate and the lattice constant of at least either of the first and second cladding layers, and .DELTA.a is obtained from .DELTA.a=a.sub.c -a).
摘要翻译：半导体发光器件包括半导体衬底（1），沉积在半导体衬底（1）上的第一导电型第一包覆层（2），沉积在第一覆层（2）上的有源层（4）沉积在有源层（4）上的第二导电类型的第二包覆层（6）。第一和第二覆层（2,6）由包括Zn，Hg，Cd，Mg中的至少一种II族元素的II / VI化合物半导体和至少一种VI族元素构成作为S，Se，Te。第一包层（2）和第二包覆层（6）中的至少一个与基板之间的晶格失配DELTA a / a（％）设定在-0.9％的范围内ΔTATA/ /=0.5%（参考符号a和ac表示半导体衬底的晶格常数和第一和第二包层中的至少任一个的晶格常数，并且DELTA a从DELTA a = ac-a获得）。

7. 发明申请

US20100114399A1 DIGITAL CONTROLLER FOR CONTROLLING OUTPUT VOLTAGE UNDER LARGE VARIATIONS IN LOAD AND SUPPLY VOLTAGE 有权
标题翻译：用于控制负载和电源电压大变化下的输出电压的数字控制器
公开(公告)号：US20100114399A1
公开(公告)日：2010-05-06
申请号：US12518488
申请日：2007-12-11
申请人： Kouji Higuchi , Kazushi Nakano , Tatsuyoshi Kajikawa , Eiji Takegami , Kazushi Watanabe , Satoshi Tomioka
发明人： Kouji Higuchi , Kazushi Nakano , Tatsuyoshi Kajikawa , Eiji Takegami , Kazushi Watanabe , Satoshi Tomioka
IPC分类号： G05B13/02 , G06F1/28 , G06F17/10
CPC分类号： H02M3/157
摘要： There is provided a digital controller which can reduce a variation in output voltage as compared to the conventional digital controller at the time of abrupt changes in load and in input of a power amplifier. The digital controller is built in the power amplifier for supplying an output voltage vo to a load and is equipped with a manipulated variable calculating unit which detects the output voltage vo to calculate a manipulated variable ξ1 and a signal generating unit which converts the manipulated variable ξ1 into a signal for making the power amplifier operate. A feedforward function from an equivalent disturbance qy caused by the variation in the load is replaced by a feedback function from the output voltage vo and the manipulated variable ξ1, thereby allowing a transfer characteristic from the disturbance qy to the output voltage vo to result in a quadratic differential characteristic. Consequently, the variation in output voltage can be reduced as compared to the conventional controller at the time of the abrupt changes in the load and in the input of the power amplifier.
摘要翻译：在负载突然变化和功率放大器的输入时，提供了一种数字控制器，其可以减少输出电压的变化，与传统的数字控制器相比。数字控制器内置在功率放大器中，用于向负载提供输出电压vo，并且配备有操纵变量计算单元，该操作变量计算单元检测输出电压vo以计算操纵变量xgr1;以及信号产生单元，其将所操纵的变量＆xgr 1转换成用于使功率放大器工作的信号。由负载变化引起的等效干扰qy的前馈函数由来自输出电压vo和操作变量＆amp; xgr1的反馈函数代替，从而允许从干扰qy到输出电压vo的传递特性具有二次微分特性。因此，与传统控制器相比，在负载突然变化和功率放大器的输入时，输出电压的变化可以减小。

8. 发明申请

US20070250186A1 Robust Digital Controller and Its Designing Device 失效
标题翻译：强大的数字控制器及其设计装置
公开(公告)号：US20070250186A1
公开(公告)日：2007-10-25
申请号：US11572778
申请日：2005-07-28
申请人： Kouji Higuchi , Kazushi Nakano , Tatsuyoshi Kajikawa , Eiji Takegami , Kazushi Watanabe , Satoshi Tomioka
发明人： Kouji Higuchi , Kazushi Nakano , Tatsuyoshi Kajikawa , Eiji Takegami , Kazushi Watanabe , Satoshi Tomioka
IPC分类号： G05B13/02
CPC分类号： G05B21/02 , G05B5/01 , H02M3/33515
摘要： A robust digital controller is equipped with a high degree of approximation and is able to incorporate a novel two-degree-of-freedom robust digital control system without substantially considering the magnitude of the control inputs and there is provided its designing device. A control compensating means is configured as an integral type control system in which a discrete transfer function Wry(z) between a target value r and a controlled variable y is approximated to a higher-approximate quadratic approximate model transfer function Wm(z) and an arithmetic processing can be performed within the digital controller based on the model transfer function Wm(z). Further, the designing device automatically calculates parameters constituting the control system. Consequently, a robust digital controller can be easily realized that is equipped with a high degree of approximation as compared with a conventional approximate digital control system for realizing a first-order model and is robust against output noises.
摘要翻译：强大的数字控制器具有高度的近似性，并且能够引入一种新颖的两度自由度鲁棒的数字控制系统，而基本上不考虑控制输入的大小，并提供其设计装置。控制补偿装置被配置为整体式控制系统，其中目标值r和受控变量y之间的离散传递函数W（z）近似为较高近似二次近似模型传递函数W m（z），并且可以在数字控制器内基于模型传递函数W（m）执行运算处理。此外，设计装置自动计算构成控制系统的参数。因此，与用于实现一阶模型的常规近似数字控制系统相比，可以容易地实现具有高度近似的鲁棒数字控制器，并且对输出噪声是鲁棒的。

9. 发明授权

US5740193A Semiconductor light-emitting device 失效
标题翻译：半导体发光装置
公开(公告)号：US5740193A
公开(公告)日：1998-04-14
申请号：US832065
申请日：1997-04-02
申请人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
发明人： Hiroyuki Okuyama , Akira Ishibashi , Eisaku Kato , Hiroshi Yoshida , Kazushi Nakano , Masakazu Ukita , Satoru Kijima , Sakurako Okamoto
IPC分类号： H01L33/14 , H01L33/28 , H01S5/00 , H01S5/028 , H01S5/30 , H01S5/327 , H01S3/19
CPC分类号： H01L33/285 , H01S5/327 , H01S5/028 , H01S5/305 , H01S5/3086
摘要： A II-VI group compound semiconductor light-emitting device can emit light of a short wavelength at room temperature. Operation characteristics, such as current--voltage characteristics and current--light output characteristics can be stabilized and a life of this semiconductor light-emitting device can be extended. The semiconductor light-emitting device comprises a substrate (1), at least a first cladding layer (2) of a first conductivity type, an active layer (3) and a second cladding layer (4) of a second conductivity type, wherein at least the active layer (3) is made of a II-VI group compound semiconductor and the active layer (3) is doped by either or both of n-type and p-type dopants.
摘要翻译： II-VI族化合物半导体发光元件能够在室温下发出短波长的光。可以稳定电流 - 电压特性和电流 - 光输出特性等工作特性，延长半导体发光元件的寿命。半导体发光器件包括基板（1），至少第一导电类型的第一覆层（2），第二导电类型的有源层（3）和第二覆层（4），其中在至少有源层（3）由II-VI族化合物半导体制成，并且有源层（3）由n型和p型掺杂剂中的一种或两者掺杂。

10. 发明授权

US07620462B2 Robust digital controller and its designing device 失效
标题翻译：坚固的数字控制器及其设计装置
公开(公告)号：US07620462B2
公开(公告)日：2009-11-17
申请号：US11572778
申请日：2005-07-28
申请人： Kouji Higuchi , Kazushi Nakano , Tatsuyoshi Kajikawa , Eiji Takegami , Kazushi Watanabe , Satoshi Tomioka
发明人： Kouji Higuchi , Kazushi Nakano , Tatsuyoshi Kajikawa , Eiji Takegami , Kazushi Watanabe , Satoshi Tomioka
IPC分类号： G05B13/02 , G05B19/29 , G05B11/01
CPC分类号： G05B21/02 , G05B5/01 , H02M3/33515
摘要： A robust digital controller is equipped with a high degree of approximation and is able to incorporate a novel two-degree-of-freedom robust digital control system without substantially considering the magnitude of the control inputs and there is provided its designing device. A control compensating means is configured as an integral type control system in which a discrete transfer function Wry (z) between a target value r and a controlled variable y is approximated to a higher-approximate quadratic approximate model transfer function Wm (z) and an arithmetic processing can be performed within the digital controller based on the model transfer function Wm (z). Further, the designing device automatically calculates parameters constituting the control system. Consequently, a robust digital controller can be easily realized that is equipped with a high degree of approximation as compared with a conventional approximate digital control system for realizing a first-order model and is robust against output noises.
摘要翻译：强大的数字控制器具有高度的近似性，并且能够引入一种新颖的两度自由度鲁棒的数字控制系统，而基本上不考虑控制输入的大小，并提供其设计装置。控制补偿装置被配置为整体式控制系统，其中目标值r和受控变量y之间的离散传递函数Wry（z）近似于较高近似二次近似模型传递函数Wm（z），并且可以基于模型传递函数Wm（z）在数字控制器内执行算术处理。此外，设计装置自动计算构成控制系统的参数。因此，与用于实现一阶模型的常规近似数字控制系统相比，可以容易地实现具有高度近似的鲁棒数字控制器，并且对输出噪声是鲁棒的。

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