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    • 3. 发明申请
    • COMBUSTIBLE GAS SENSOR
    • 可燃气体传感器
    • US20100221148A1
    • 2010-09-02
    • US12593389
    • 2008-03-19
    • Tsutomu OieKazutaka OkamotoYoshiaki NakataYutaka YamagishiShuji Takamatsu
    • Tsutomu OieKazutaka OkamotoYoshiaki NakataYutaka YamagishiShuji Takamatsu
    • G01N31/12
    • G01N27/16
    • The present invention provides a combustible gas sensor that can realize a considerable improvement in the measurement sensitivity and the measurement precision by increasing the contact area between the measurement object gas and the oxidation catalyst particles, increasing the amount of heat generation of oxidation reaction in accordance therewith, and improving the transference of the oxidation reaction heat, while reducing the scale of the whole.In this invention, a temperature measurement element such as a thermopile obtained by joining different kinds of metals is formed on a top surface of a Si substrate; a porous catalyst layer made by allowing a porous material layer to carry oxidation catalyst particles such as Pt or a chain-form catalyst layer made by linking and bonding numerous oxidation catalyst particles in a chain form is provided on a heat-sensitive part of this temperature measurement element; and this porous catalyst layer or the chain-form catalyst layer is integrally bonded with the heat-sensitive part of this temperature measurement element.
    • 本发明提供一种可燃气体传感器,其可以通过增加测量对象气体和氧化催化剂颗粒之间的接触面积来提高测量灵敏度和测量精度的显着提高,从而增加氧化反应的发热量 ,并改善氧化反应热的转移,同时降低整体的规模。 在本发明中,在Si衬底的顶表面上形成诸如通过接合不同种类的金属获得的热电堆的温度测量元件; 通过使多孔材料层承载氧化催化剂颗粒如Pt或链形催化剂层制成的多孔催化剂层,其通过将多个氧化催化剂颗粒以链形式连接和结合而制备,在该温度的热敏部分 测量元件; 并且该多孔催化剂层或链状催化剂层与该温度测量元件的热敏部分一体地结合。
    • 9. 发明申请
    • SEMICONDUCTOR TYPE GAS SENSOR AND MANUFACTURING METHOD THEREOF
    • 半导体类型气体传感器及其制造方法
    • US20110186939A1
    • 2011-08-04
    • US12677646
    • 2008-08-27
    • Jun TamakiYoshiaki NakataYutaka Yamagishi
    • Jun TamakiYoshiaki NakataYutaka Yamagishi
    • H01L29/66H01L21/02
    • G01N27/12G01N33/0037Y02A50/245
    • This invention provides a semiconductor type gas sensor that can considerably increase the detection sensitivity to low-concentration gases, and can increase the response-recovery speed to achieve a conspicuous improvement in the overall performance, as well as a manufacturing method thereof.This invention is a semiconductor type gas sensor including a semiconductor substrate having a hollow portion in a central part, an insulating film of a diaphragm structure disposed on this substrate to form to cover the hollow portion, a heater formed on this insulating film, a resistance-measuring electrode, and a gas-sensitive film formed on the resistance-measuring electrode, characterized in that the gas-sensitive film is made of monoclinic tungsten oxide containing a hexagonal tungsten oxide crystal.
    • 本发明提供一种半导体型气体传感器,其可以显着提高对低浓度气体的检测灵敏度,并且可以提高响应恢复速度以实现整体性能的显着改善,以及其制造方法。 本发明是一种半导体型气体传感器,其包括在中心部分具有中空部分的半导体衬底,设置在该衬底上以形成覆盖中空部分的隔膜结构的绝缘膜,形成在该绝缘膜上的加热器, - 测量电极和形成在电阻测量电极上的气敏膜,其特征在于,所述气敏膜由含有六方晶氧化钨晶体的单斜晶氧化钨制成。