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    • 2. 发明授权
    • Recording member
    • 录音成员
    • US4348461A
    • 1982-09-07
    • US160661
    • 1980-06-18
    • Motoyasu TeraoYoshio TaniguchiShinkichi HorigomeMasahiro OjimaKazuo ShigematsuKeizo KatoYoshinori MiyamuraSeiji Yonezawa
    • Motoyasu TeraoYoshio TaniguchiShinkichi HorigomeMasahiro OjimaKazuo ShigematsuKeizo KatoYoshinori MiyamuraSeiji Yonezawa
    • B41M5/26G03C1/705G11B7/24G11B7/243B32B5/14
    • G11B7/243G03C1/705G11B2007/24314G11B2007/24316Y10S428/913Y10S430/146Y10S430/165Y10T428/31
    • A recording member having a predetermined substrate, and a thin film which is formed on the substrate and which is formed with recesses or pits for recording information when irradiated with a working beam, characterized in that said thin film is formed of an inorganic material which contains at least arsenic, selenium and tellurium, and that a distribution of either of said Se and said Te decreases from a part near the surface of said thin film towards a central part thereof, while a distribution of said As increases from a part near the surface towards said central part, is disclosed. This recording member can afford a high signal-to-noise ratio and a long lifetime. It is preferable that the distribution of said Se decreases so as to be at least 50 atomic-% in terms of the content of said Se in a part being the closest to the surface of said thin film and to be at most 40 atomic-% in terms of the average content of said Se over the whole thin film, and that the distribution of said As increases so as to be at most 15 atomic-% in terms of the content of said As in the closest part and to be 5 to 35 atomic-% in terms of the average content of said As in said whole thin film. The Se-Te-As-based material may well be doped with at least one element selected from the group consisting of Ge, S, Tl, Sn, Pb, In and Ta, within a range of 2 to 15 atomic-%.
    • 具有预定基板的记录部件和形成在基板上并且在用工作光束照射时用于记录信息的凹坑或凹坑形成的薄膜,其特征在于,所述薄膜由无机材料形成,所述无机材料包含 至少砷,硒和碲,并且所述Se和所述Te中的任一个的分布从所述薄膜的表面附近的部分向其中心部分减少,而所述As的分布从表面附近的部分增加 朝向所述中心部分。 该记录部件可以提供高的信噪比和长的使用寿命。 优选所述Se的分布以与所述薄膜表面最接近的部分中的所述Se的含量为至少50原子%,并且为至多40原子% 就所述Se在整个薄膜上的平均含量而言,所述As的分布以所述As在最接近的部分的含量为最多为15原子%,并且为5〜 在所述整个薄膜中,所述As的平均含量为35原子%。 可以在2至15原子%的范围内掺杂选自由Ge,S,Tl,Sn,Pb,In和Ta组成的组中的至少一种元素的Se-Te-As基材料。
    • 10. 发明授权
    • Information recording method using a modulated recording beam at high,
intermediate and low power levels
    • 使用高,中,低功率电平的调制记录光束的信息记录方法
    • US5084857A
    • 1992-01-28
    • US359803
    • 1989-05-31
    • Yasushi MiyauchiMotoyasu TeraoHiroshi YasuokaTetsuya NishidaKeikichi Andoo
    • Yasushi MiyauchiMotoyasu TeraoHiroshi YasuokaTetsuya NishidaKeikichi Andoo
    • G11B7/0055
    • G11B7/00557
    • The present invention relates to a method of recording on a rewritable recording medium using a laser beam capable of producing at least three discreet levels of power. The three levels of power used for writing to the recording medium is greater than the power required for reading. The present method is unique in that the power level of the laser beam is modulated between high, intermediate, and low levels over a time period so that at least three discreet power levels are radiated to the recording medium during recording. The increment of the radiation energy of the upward pulse from the intermediate level toward the high level is within the range of 0.8 to 1.2 times the decrement of the radiation energy of the downward pulse from the intermediate level to the low level. The present invention provides high density recording capability with minimum non-erasure areas even when the recording medium is formed from a high velocity crystallization (high speed erasure).
    • 本发明涉及使用能够产生至少三个谨慎的功率的激光束在可重写记录介质上进行记录的方法。 用于写入记录介质的三个电源电平大于读取所需的功率。 本方法的独特之处在于,激光束的功率电平在一段时间内在高电平,中间电平和低电平之间被调制,使得在记录期间至少三个分立的功率电平被辐射到记录介质。 上升脉冲从中间电平向高电平的辐射能量的增量在从中间电平到低电平的向下脉冲的辐射能量减少的0.8到1.2倍的范围内。 即使当高速结晶(高速擦除)形成记录介质时,本发明提供具有最小非擦除区域的高密度记录能力。