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    • 6. 发明授权
    • On-line roll grinding apparatus
    • 在线辊磨机
    • US5569060A
    • 1996-10-29
    • US250674
    • 1994-05-27
    • Shigeru MoriYasuharu Imagawa
    • Shigeru MoriYasuharu Imagawa
    • B21B13/02B21B28/04B24B5/16B24B5/36B24B5/37
    • B21B28/04B24B5/167B24B5/363B21B13/023
    • A grinding unit 5 comprises grinding wheel 20, a driving device 22 for driving the grinding wheel, and a shifting device 23. When the grinding wheel is subject to vibration of a work roll 1a, vibrating energy is absorbed by deflection of a plain wheel 52 which is integral with an abrasive layer 51 of the grinding wheel and has an elastically deforming function. A rail frame 7 is moved by rail moving devices 30 to tilt a grinding wheel spindle 21 with respect to an axis of the work roll 1a. The rail frame 7 is tilted in opposite directions with respect to the axis of the work roll between when the grinding unit 5 is positioned to grind one end side of the work roll 1a and when it is positioned to grind the other end side thereof. In an on-line roll grinding apparatus, vibration from the work roll is absorbed to enable precise grinding with good roughness of the roll surface without giving rise to any chattering marks, and one work roll can be ground by a single grinding unit up to both roll ends.
    • 研磨单元5包括砂轮20,用于驱动砂轮的驱动装置22和移动装置23.当砂轮受到工作辊1a的振动时,振动能被平滑轮52的偏转吸收 其与砂轮的研磨层51成一体,并且具有弹性变形功能。 轨道框架7通过轨道移动装置30移动,以使砂轮主轴21相对于工作辊1a的轴线倾斜。 轨道框架7相对于工作辊的轴线在相对于工作辊的轴线方向倾斜时,在研磨单元5定位成研磨工作辊1a的一端侧之间时,以及当定位成研磨另一端侧时。 在线辊式研磨设备中,来自工作辊的振动被吸收以能够精确地研磨辊表面的粗糙度,而不会产生任何抖动痕迹,并且一个工作辊可以通过单个研磨单元研磨至两个 卷端。
    • 9. 发明授权
    • Semiconductor device and method for manufacturing same
    • 半导体装置及其制造方法
    • US07981811B2
    • 2011-07-19
    • US12508888
    • 2009-07-24
    • Shigeru MoriTakahiro KorenariTadahiro MatsuzakiHiroshi Tanabe
    • Shigeru MoriTakahiro KorenariTadahiro MatsuzakiHiroshi Tanabe
    • H01L21/31
    • H01L29/78621H01L29/66757
    • A base layer is formed on an insulating substrate, and a semiconductor layer is formed in localized fashion thereon. A gate insulating film is then formed so as to cover the semiconductor layer, and a gate electrode is formed on a portion of the gate insulating film. An impurity is then implanted into the semiconductor layer via the gate insulating film, and a source region, a drain region, and an LDD region are formed. The gate insulating film is etched with dilute hydrofluoric acid. An electrode-protecting insulating film is then formed so as to cover the gate electrode, and the entire surface of the surface layer portion of the electrode-protecting insulating film is etched away using dilute hydrofluoric acid. Carrier traps introduced into the electrode-protecting insulating film and the gate insulating film are thereby removed.
    • 在绝缘基板上形成基底层,以局部方式形成半导体层。 然后形成栅极绝缘膜以覆盖半导体层,并且栅极电极形成在栅极绝缘膜的一部分上。 然后通过栅极绝缘膜将杂质注入到半导体层中,形成源极区,漏极区和LDD区。 用稀氢氟酸蚀刻栅极绝缘膜。 然后形成电极保护绝缘膜以覆盖栅电极,并且使用稀氢氟酸腐蚀掉电极保护绝缘膜的表面层部分的整个表面。 因此,引入到电极保护绝缘膜和栅极绝缘膜中的载流子阱被去除。