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1. 发明授权

US5494494A Integrated module multi-chamber CVD processing system and its method for processing substrates 失效
公开(公告)号：US5494494A
公开(公告)日：1996-02-27
申请号：US280117
申请日：1994-07-25
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , B21F41/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.

2. 发明授权

US5534072A Integrated module multi-chamber CVD processing system and its method for processing subtrates 失效
标题翻译：集成模块多室CVD处理系统及其处理方法
公开(公告)号：US5534072A
公开(公告)日：1996-07-09
申请号：US77687
申请日：1993-06-16
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.
摘要翻译：在用于沉积覆盖钨膜的CVD处理系统中，当衬底夹具与衬底分离时，形成不同的阴影，而不会发生任何微剥离，以防止任何覆盖的钨沉积在SiO 2上，从而减少细尘粒子。一种用于沉积覆盖钨膜的CVD处理系统，包括基座（4）; 环形卡盘（9），用于将基板（3）的周边部分固定在基座上; 用于供应反应性气体的反应气体供应机构（17,18和19）以及用于排出未反应气体等的排气机构（2），其中：所述环卡盘具有与所述基板的周边部分接触的至少三点接触构件（10）点接触构件设置在环卡盘的内周的外侧的位置; 在环卡盘和基板之间的点接触构件处形成间隙（11）; 并且提供吹扫气体供给机构（20和21）以吹扫通过间隙的吹扫气体，以防止反应性气体进入间隙（11）。将间隙尺寸与吹扫气体的流量的比率设定为最佳值，以满足薄膜的周边部分的位置与环的内周的位置一致的条件卡盘

3. 发明授权

US5505779A Integrated module multi-chamber CVD processing system and its method for processing substrates 失效
标题翻译：集成模块多室CVD处理系统及其处理基板的方法
公开(公告)号：US5505779A
公开(公告)日：1996-04-09
申请号：US280118
申请日：1994-07-25
申请人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Shigeru Mizuno , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： C23C16/44 , C23C16/455 , C23C16/458 , C23C16/54 , C23C16/00
CPC分类号： C23C16/45519 , C23C16/4401 , C23C16/45521 , C23C16/4585 , C23C16/54 , Y10S414/135 , Y10S438/908
摘要： In a CVD processing system for depositing a blanket tungsten film, a distinct shadow is formed without causing any micro-peeling when the substrate fixture is separated from the substrate so as to prevent any blanket tungsten from being deposited on SiO.sub.2, thus reducing the occurrence of fine dust particles. A CVD processing system for depositing a blanket tungsten film, includes a susceptor (4); a ring chuck (9) for affixing the peripheral portion of a substrate (3) on the susceptor; reactive gas supply mechanisms (17, 18 and 19) for supplying reactive gas; and an exhaust mechanism (2) for exhausting unreacted gas and the like, wherein: the ring chuck has at least three point contact members (10) in contact with the peripheral portion of the substrate; the point contact members are provided at positions outside the inner periphery of the ring chuck; a gap (11) is formed at the point contact members between the ring chuck and the substrate; and purge gas supply mechanisms (20 and 21) are provided to blow off purge gas through the gap in order to prevent reactive gas from entering the gap (11). A ratio of the size of the gap to the flow rate of purge gas is set to such an optimum value as to satisfy a condition in which the position of the peripheral portion of the thin film coincides with the position of the inner periphery of the ring chuck.
摘要翻译：在用于沉积覆盖钨膜的CVD处理系统中，当衬底夹具与衬底分离时，形成不同的阴影，而不会发生任何微剥离，以防止任何覆盖的钨沉积在SiO 2上，从而减少细尘粒子。一种用于沉积覆盖钨膜的CVD处理系统，包括基座（4）; 环形卡盘（9），用于将基板（3）的周边部分固定在基座上; 用于供应反应性气体的反应气体供应机构（17,18和19）以及用于排出未反应气体等的排气机构（2），其中：所述环卡盘具有与所述基板的周边部分接触的至少三点接触构件（10）点接触构件设置在环卡盘的内周的外侧的位置; 在环卡盘和基板之间的点接触构件处形成间隙（11）; 并且提供吹扫气体供给机构（20和21）以吹扫通过间隙的吹扫气体，以防止反应性气体进入间隙（11）。将间隙尺寸与吹扫气体的流量的比率设定为最佳值，以满足薄膜的周边部分的位置与环的内周的位置一致的条件卡盘

4. 发明授权

US5728629A Process for preventing deposition on inner surfaces of CVD reactor 失效
标题翻译：防止在CVD反应器内表面沉积的方法
公开(公告)号：US5728629A
公开(公告)日：1998-03-17
申请号：US311681
申请日：1994-09-23
申请人： Shigeru Mizuno , Takanori Yoshimura , Yoshihiro Katsumata , Nobuyoki Takahashi
发明人： Shigeru Mizuno , Takanori Yoshimura , Yoshihiro Katsumata , Nobuyoki Takahashi
IPC分类号： C23C16/44 , C23C16/54 , H01L21/205 , H01L21/285
CPC分类号： C23C16/4404 , Y10S438/905 , Y10S438/958
摘要： A process for forming a thin film by chemical vapor deposition which comprises repeating a substrate processing step on one or more substrates placed inside a reaction chamber by introducing a reaction gas inside the reaction chamber. The process includes a step of introducing a passivation gas or the like for passivating the surface of a thin film deposited on the fixing jig or other peripheral members between substrate processing steps. The passivation gas is, for example, an adsorbent gas or an oxidizing gas. More specifically, an example of an adsorbent gas is a mixture of an inert gas and from 0.1 to 10% of NH.sub.3 gas or SiH.sub.2 Cl.sub.2 gas, and an example of an oxidizing gas is a mixture of an inert gas and at least one selected from the group of oxygen, nitrogen, monoxide, and nitrogen dioxide. The inert gas may also be replaced with N.sub.2 gas.
摘要翻译：一种通过化学气相沉积法形成薄膜的方法，包括通过在反应室内引入反应气体，在放置在反应室内的一个或多个基材上重复进行基板处理步骤。该方法包括在衬底处理步骤之间引入钝化气体等以钝化沉积在固定夹具或其它周边部件上的薄膜的表面的步骤。钝化气体例如是吸附气体或氧化气体。更具体地，吸附气体的实例是惰性气体和0.1至10％的NH 3气体或SiH 2 Cl 2气体的混合物，氧化气体的实例是惰性气体和选自以下的至少一种的混合物：一组氧气，氮气，一氧化氮和二氧化氮。惰性气体也可以用N 2气体代替。

5. 发明授权

US06386511B1 Gate valve apparatus 有权
标题翻译：闸阀装置
公开(公告)号：US06386511B1
公开(公告)日：2002-05-14
申请号：US09654117
申请日：2000-09-01
申请人： Kazuhito Watanabe , Yoshihiro Katsumata , Nobuyuki Takahashi
发明人： Kazuhito Watanabe , Yoshihiro Katsumata , Nobuyuki Takahashi
IPC分类号： F16K116
CPC分类号： F16K31/52 , F16K1/16
摘要： To be able to reduce the size of a drive part and, as a result, to achieve the reduction in size and the lowering of manufacturing cots of a gate valve. An open/close mechanism is configured from a turning pair only. This open/close mechanism is configured from a first swing link, second swing link and coupling link. The first swing link is driven by a rotation cylinder to perform a swinging motion. The second swing link is connected to a drive shaft and performs a swinging motion with the drive shaft as its axis. The first swing link and second swing link are coupled by the coupling link. When the rotation cylinder is driven, whereby the first swing link is caused to swing, the coupling link is vertically driven whereby the second swing link is caused to swing. As a result, a valve, connected to the second swing link, swings and the opening and closing operation of the flow path port is performed.
摘要翻译：为了能够减小驱动部件的尺寸，因此能够实现闸阀的制造小型化的小型化和降低。开/关机构仅由转弯配置。该开/关机构由第一摆动连杆，第二摆动连杆和联接杆构成。第一摆动连杆由旋转圆筒驱动以进行摆动。第二摆动连杆与驱动轴连接，以驱动轴为轴的方式进行摆动。第一摆动连杆和第二摆动连杆通过联轴节连接。当旋转圆筒被驱动时，第一摆动杆被摆动，联接杆被垂直驱动，从而使第二摆动杆摆动。结果，与第二摆动连杆连接的阀门摆动，进行流路口的开闭动作。

6. 外观设计

USD417884S Electronic keyboard musical instrument 失效
公开(公告)号：USD417884S
公开(公告)日：1999-12-21
申请号：US99437
申请日：1999-01-21
申请人： Yoshihiro Katsumata
设计人： Yoshihiro Katsumata

7. 发明授权

US08476520B2 Sound generation control apparatus 有权
标题翻译：声音发生控制装置
公开(公告)号：US08476520B2
公开(公告)日：2013-07-02
申请号：US13032424
申请日：2011-02-22
申请人： Jun Usui , Taishi Kamiya , Yoshihiro Katsumata , Kiyohisa Sugii , Thomas Coulbeaut
发明人： Jun Usui , Taishi Kamiya , Yoshihiro Katsumata , Kiyohisa Sugii , Thomas Coulbeaut
IPC分类号： G10H1/18
CPC分类号： G10H1/0008 , G10H2220/131 , G10H2250/641
摘要： A sound generation control apparatus displays in a loop region a music data image corresponding to music data to be generated as time progresses, such that progression of the music data corresponds to a lengthwise position of the loop region. The sound generation control apparatus outputs time information indicating the time that progresses from a start of generation of music sound. The sound generation control apparatus controls the generation of the music sound based on the music data according to a relationship between a lengthwise position of the loop region and a displayed location of the music data image in the loop region. The sound generation control apparatus displays a plurality of the music data images in the loop region, and simultaneously generates a plurality of music sounds corresponding to the plurality of the music data images as the time progresses.
摘要翻译：声音产生控制装置在循环区域中显示与时间进行的要生成的音乐数据相对应的音乐数据图像，使得音乐数据的进行对应于循环区域的纵向位置。声音产生控制装置输出指示从开始生成音乐声音开始的时间的时间信息。声音产生控制装置根据循环区域的纵向位置和音乐数据图像的显示位置之间的关系，基于音乐数据来控制音乐声音的产生。声音生成控制装置在循环区域中显示多个音乐数据图像，并且随着时间的推移同时生成与多个音乐数据图像相对应的多个音乐声音。

8. 外观设计

USD383482S apparatus for constituting musical sound signal 失效
公开(公告)号：USD383482S
公开(公告)日：1997-09-09
申请号：US48965
申请日：1996-01-16
申请人： Yoshihiro Katsumata
设计人： Yoshihiro Katsumata

9. 发明授权

US06699423B2 Ink wastage absorber and ink supporter 失效
公开(公告)号：US06699423B2
公开(公告)日：2004-03-02
申请号：US09987077
申请日：2001-11-13
申请人： Yoshihiro Katsumata , Hideya Kinoshita
发明人： Yoshihiro Katsumata , Hideya Kinoshita
IPC分类号： B27N700
CPC分类号： C08J9/40 , B41J2/1721 , C08J2375/04 , Y10S521/918 , Y10T428/249953 , Y10T428/249961
摘要： An ink wastage absorber is made from a flexible polyurethane foam having an air-permeability of 1.0 cc/cm2/sec or more, or is made from a flexible polyurethane foam produced by using a foamable raw material containing a polyol, an isocyanate, a catalyst, and a foaming agent, wherein the polyurethane foam is impregnated with a surface active agent. An ink supporter includes an ink permeation member provided at a portion corresponding to a printer head and an ink absorbing member being in contact with the ink permeation member.

10. 外观设计

USD470168S1 Piano roof plate 失效
标题翻译：钢琴屋顶板
公开(公告)号：USD470168S1
公开(公告)日：2003-02-11
申请号：US29127060
申请日：2000-07-28
申请人： Yoshihiro Katsumata
设计人： Yoshihiro Katsumata

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