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1. 发明授权

US4516147A Semiconductor device having a substrate covered with a high impurity concentration first polycrystalline layer and then a lower impurity concentration second polycrystalline layer 失效
标题翻译：半导体器件具有被高杂质浓度的第一多晶层覆盖的衬底，然后覆盖较低杂质浓度的第二多晶层
公开(公告)号：US4516147A
公开(公告)日：1985-05-07
申请号：US582857
申请日：1984-02-24
申请人： Shigeru Komatsu , Hiroshi Inoue
发明人： Shigeru Komatsu , Hiroshi Inoue
IPC分类号： H01L29/43 , H01L21/225 , H01L21/28 , H01L21/285 , H01L21/331 , H01L29/73 , H01L29/04 , H01L23/48 , H01L29/34
CPC分类号： H01L21/2257 , H01L21/28525
摘要： A semiconductor device has a semiconductor substrate of a first conductivity type, and a diffused region of a second conductivity type. A first insulation film is formed on the substrate, having an opening exposing the surface of the diffused region. First and second polycrystalline layers doped with impurities associated with the second conductivity type are disposed in the opening, and the concentration of the impurities of the first polycrystalline layer is higher than that of the second polycrystalline layer. A metal electrode is formed on the second polycrystalline layer.
摘要翻译：半导体器件具有第一导电类型的半导体衬底和第二导电类型的扩散区域。第一绝缘膜形成在基板上，具有露出扩散区域的表面的开口。掺杂有与第二导电类型相关的杂质的第一和第二多晶层设置在开口中，并且第一多晶层的杂质浓度高于第二多晶层的杂质浓度。金属电极形成在第二多晶层上。

2. 发明授权

US4888306A Method of manufacturing a bipolar transistor 失效
标题翻译：制造双极晶体管的方法
公开(公告)号：US4888306A
公开(公告)日：1989-12-19
申请号：US188625
申请日：1988-04-29
申请人： Shigeru Komatsu , Hiroshi Inoue
发明人： Shigeru Komatsu , Hiroshi Inoue
IPC分类号： H01L21/768 , H01L21/02 , H01L21/28 , H01L21/3205 , H01L23/29 , H01L23/31 , H01L23/485 , H01L29/45
CPC分类号： H01L28/20 , H01L21/32055 , H01L23/298 , H01L23/3171 , H01L23/3192 , H01L23/485 , H01L29/456 , H01L2924/0002 , Y10S148/011 , Y10S148/124
摘要： A semiconductor device comprising a semiconductor substrate with at least one semiconductor region formed in it, a polycrystalline silicon layer formed in contact with the semiconductor region and a metal layer formed on the polycrystalline silicon layer. The peripheral portion and outer edges of the polycrystalline silicon layer are covered with an insulation layer.
摘要翻译：一种半导体器件，包括其中形成有至少一个半导体区域的半导体衬底，与半导体区域形成的多晶硅层和形成在多晶硅层上的金属层。多晶硅层的周边部分和外边缘被绝缘层覆盖。

3. 发明授权

US4577397A Method for manufacturing a semiconductor device having vertical and lateral transistors 失效
标题翻译：制造具有垂直和横向晶体管的半导体器件的方法
公开(公告)号：US4577397A
公开(公告)日：1986-03-25
申请号：US689966
申请日：1985-01-09
申请人： Shigeru Komatsu , Hiroshi Inoue , Michio Nakamura
发明人： Shigeru Komatsu , Hiroshi Inoue , Michio Nakamura
IPC分类号： H01L29/73 , H01L21/033 , H01L21/331 , H01L21/761 , H01L21/762 , H01L27/082 , H01L29/72 , H01L21/425
CPC分类号： H01L29/72 , H01L21/033 , H01L21/76202 , H01L27/0821
摘要： The present invention provides a semiconductor device which includes a thick countersunk oxide layer selectively formed by the LOCOS process on the surface of a silicon body, openings formed in this oxide layer, and semiconductor element regions formed by the introduction of an impurity in the silicon body through these openings.The semiconductor element regions preferably comprise the emitter region and the collector region of the lateral transistor.
摘要翻译：本发明提供一种半导体器件，其包括通过LOCOS工艺在硅体表面上选择性地形成的厚的沉积氧化物层，在该氧化物层中形成的开口，以及通过在硅体中引入杂质形成的半导体元件区域通过这些开口。半导体元件区优选地包括横向晶体管的发射极区域和集电极区域。

4. 发明授权

US4224088A Method for manufacturing a semiconductor device 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US4224088A
公开(公告)日：1980-09-23
申请号：US954325
申请日：1978-10-24
申请人： Shigeru Komatsu , Hiroshi Inoue
发明人： Shigeru Komatsu , Hiroshi Inoue
IPC分类号： H01L21/8222 , H01L21/225 , H01L21/285 , H01L21/3215 , H01L21/331 , H01L27/082 , H01L29/73 , H01L21/22
CPC分类号： H01L21/32155 , H01L21/2257 , H01L21/28525
摘要： A method for manufacturing steps of depositing phosphorus onto separate portions of a silicon substrate, covering only one portion with a polycrystalline silicon layer and heating the deposited phosphorus on the separate portions at the same time to diffuse thereby forming two diffusion layers of different depths.
摘要翻译：一种用于制造在硅衬底的分开部分上沉积磷的步骤的方法，其仅用一个多晶硅层覆盖一部分，同时在分离的部分上加热沉积的磷以扩散，从而形成两个不同深度的扩散层。

5. 发明申请

US20080218628A1 Decoder Device And Receiver Using The Same 有权
标题翻译：解码器和接收器使用它
公开(公告)号：US20080218628A1
公开(公告)日：2008-09-11
申请号：US12120472
申请日：2008-05-14
申请人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
发明人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
IPC分类号： H04N7/01
CPC分类号： H04N5/775 , H04N5/4401 , H04N5/445 , H04N5/45 , H04N5/46 , H04N5/85 , H04N7/012 , H04N21/42638 , H04N21/42653 , H04N21/4305 , H04N21/4316 , H04N21/440218
摘要： A decoder apparatus which includes a de-multiplexer, which is configured to divide motion picture data from a transport stream, a video decoder, which is configured to decode the divided motion picture data, and a first re-formatter on-screen unit, which is configured to display motion picture data and at least one of first and second graphic data on a screen. The first re-formatter on-screen unit converts motion picture data of a first aspect ratio, which is decoded by the video decoder, and first graphics data, which is produced by applying information relating to a caption corresponding to the motion picture data, into a second aspect ratio, when outputting the motion picture data of the first aspect ratio after conversion into the second aspect ratio, without converting the aspect ratio of second graphic data, which is produced by applying information relating to a program guide.
摘要翻译：一种解码器装置，包括解复用器，其被配置为从传输流分割运动图像数据，被配置为对分割的运动图像数据进行解码的视频解码器和第一重新格式化器屏幕单元，其中被配置为在屏幕上显示运动图像数据和第一和第二图形数据中的至少一个。第一重新格式化器屏幕单元将由视频解码器解码的第一宽高比的运动图像数据和通过将与运动图像数据相对应的字幕相关的信息应用的信息产生的第一图形数据转换成第二宽高比，当在转换成第二宽高比之后输出第一宽高比的运动图像数据而不转换通过应用与节目指南相关的信息而产生的第二图形数据的纵横比。

6. 发明授权

US06710817B2 Decoder device and receiver using the same 有权
标题翻译：解码器和接收机使用相同
公开(公告)号：US06710817B2
公开(公告)日：2004-03-23
申请号：US09984508
申请日：2001-10-30
申请人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
发明人： Masuo Oku , Hironori Komi , Keisuke Inata , Ryosuke Toya , Kenji Katsumata , Shigeru Komatsu , Shinobu Torikoshi , Takaaki Matono , Fumihito Tanaka , Masaaki Hisanaga
IPC分类号： H04N550
CPC分类号： H04N5/775 , H04N5/4401 , H04N5/445 , H04N5/45 , H04N5/46 , H04N5/85 , H04N7/012 , H04N21/42638 , H04N21/42653 , H04N21/4305 , H04N21/4316 , H04N21/440218
摘要： An object of the present application is to provide the display of motion picture data used in both of analog and digital broadcasts with high picture quality and a common user interface. The above object can be achieved by providing a plurality of picture format converters, a plurality of OSD circuits, and means for storing motion picture data used in an analog broadcast in a common memory.
摘要翻译：本申请的目的是提供在具有高图像质量的模拟和数字广播两者中使用的运动图像数据的显示和公共用户界面。上述目的可以通过提供多个图像格式转换器，多个OSD电路和用于存储在公共存储器中的模拟广播中使用的运动图像数据的装置来实现。

7. 发明授权

US5179642A Image synthesizing apparatus for superposing a second image on a first image 失效
标题翻译：用于将第二图像叠加在第一图像上的图像合成装置
公开(公告)号：US5179642A
公开(公告)日：1993-01-12
申请号：US856827
申请日：1992-03-25
申请人： Shigeru Komatsu
发明人： Shigeru Komatsu
IPC分类号： G06T15/40
CPC分类号： G06T15/40
摘要： An image synthesizing apparatus for synthesizing first and second images with each other which includes a first display memory for storing a first image data constituting a first image, and a display memory control device for comparing a second image data for constituting a second image with a predetermined image data to thereby judge whether the second image data is to be written into the first display memory or not.
摘要翻译：一种用于合成第一和第二图像的图像合成装置，包括：第一显示存储器，用于存储构成第一图像的第一图像数据;以及显示存储器控制装置，用于将用于构成第二图像的第二图像数据与预定的从而判断第二图像数据是否被写入第一显示存储器。

8. 发明授权

US4980765A Frame buffer memory for display 失效
标题翻译：帧缓冲存储器用于显示
公开(公告)号：US4980765A
公开(公告)日：1990-12-25
申请号：US464214
申请日：1990-01-12
申请人： Yoshimichi Kudo , Shigeru Komatsu
发明人： Yoshimichi Kudo , Shigeru Komatsu
IPC分类号： G09G5/00 , G06F12/02 , G06T1/60 , G09G5/14 , G09G5/34 , G09G5/39 , G09G5/397
CPC分类号： G09G5/14 , G09G5/397 , G09G2360/126
摘要： A frame buffer memory capable of storing video data for plural frames of pictures with memory areas irrelevant to the display being reduced to a minimum, which video data consist of a number of pixels unequal to a power of "2" in the vertical and horizontal directions, respectively. The frame buffer memory is realized by using multi-port video RAMs and includes a plurality of regions for display and auxiliary regions. The regions for display includes at least first and second display regions which partially overlap each other. The auxiliary regions store the video data contained in the overlapping portion (overlapping region) of the first and second display regions, the video data stored in the auxiliary region being transferred to the overlapping region as occasion requires.
摘要翻译：能够将与图像无关的存储区域的多帧图像的视频数据的帧缓冲存储器减少到最小，哪个视频数据由不同于垂直和水平方向上的“2”的功率的像素数组成，分别。帧缓冲存储器是通过使用多端口视频RAM来实现的，并且包括用于显示和辅助区域的多个区域。用于显示的区域至少包括彼此部分重叠的至少第一和第二显示区域。辅助区域存储包含在第一和第二显示区域的重叠部分（重叠区域）中的视频数据，根据需要，存储在辅助区域中的视频数据被传送到重叠区域。

9. 发明授权

US4692190A Trimming of metal interconnection layer by selective migration of metal atoms by energy beams 失效
标题翻译：通过能量束选择性迁移金属原子来修剪金属互连层
公开(公告)号：US4692190A
公开(公告)日：1987-09-08
申请号：US813039
申请日：1985-12-24
申请人： Shigeru Komatsu
发明人： Shigeru Komatsu
IPC分类号： H01L21/3205 , H01L21/268 , H01L21/82 , H01L23/525 , H01C7/00 , B23K26/00
CPC分类号： H01L23/525 , H01L21/268 , H01L2924/0002 , Y10S148/093 , Y10S148/14
摘要： Semiconductor body is prepared and a film is formed on the semiconductor body, followed by forming an interconnection layer of aluminum alloy on the insulating film. A silicon oxide film is formed on the interconnection layer, followed by removing that portion of the silicon oxide film which is situated on a predetermined trimming area of the interconnection layer. A silicon nitride film is formed on the whole surface of the resultant structure. An energy beam is directed onto the predetermined trimming area of the interconnection layer, causing the interconnection layer to be locally heated to 400.degree. to 600.degree. C. whereby atoms in the interconnection layer migrate to permit the interconnection layer to be trimmed.
摘要翻译：制备半导体体，在半导体体上形成膜，然后在绝缘膜上形成铝合金的配线层。在互连层上形成氧化硅膜，然后除去位于互连层的预定修整区域上的部分氧化硅膜。在所得结构的整个表面上形成氮化硅膜。能量束被引导到互连层的预定修整区域上，使得互连层局部加热至400℃至600℃，由此互连层中的原子迁移以允许互连层被修整。

10. 发明授权

US4484212A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4484212A
公开(公告)日：1984-11-20
申请号：US335712
申请日：1981-12-29
申请人： Shigeru Komatsu , Michio Nakamura , Katsuji Fujita
发明人： Shigeru Komatsu , Michio Nakamura , Katsuji Fujita
IPC分类号： H01L27/04 , H01L21/768 , H01L21/822 , H01L23/522 , H01L23/58 , H01L27/08 , H01L29/84 , H01L23/48 , H01L27/02 , H01L29/44
CPC分类号： H01L23/585 , H01L23/522 , H01L27/0802 , H01L2924/0002 , Y10S257/925 , Y10S73/04
摘要： A semiconductor device comprising a semiconductor substrate having at least two resistor elements, wherein said resistor elements have a specific resistance ratio relative to each other, an insulation layer formed on a major surface of said semiconductor substrate, a circuit wiring layer formed on said insulation layer covering a portion of said insulation layer which corresponds to at least one of said resistor elements, and a dummy wiring layer made of the same material as that of the circuit wiring layer and formed on the insulation layer covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and where the ratio of an overlapping area of one resistor element in said circuit wiring layer and an overlapping area of the other resistor element and said dummy wiring layer is equal to a resistance ratio of said resistor elements.
摘要翻译：一种半导体器件，包括具有至少两个电阻元件的半导体衬底，其中所述电阻元件相对于彼此具有比电阻比，形成在所述半导体衬底的主表面上的绝缘层，形成在所述绝缘层上的电路布线层覆盖对应于所述电阻元件中的至少一个的所述绝缘层的一部分，以及由与所述电路布线层相同的材料制成的虚拟布线层，并形成在所述绝缘层上，覆盖所述绝缘层对应的部分连接到所述电路布线层未被覆盖的电阻元件或元件，并且其中所述电路布线层中的一个电阻元件的重叠区域与所述另一个电阻元件与所述伪布线层的重叠区域的重叠面积之比等于电阻所述电阻元件的比例。

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