会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Scanning electron microscope and three-dimensional shape measuring device that used it
    • 扫描电子显微镜和使用它的三维形状测量装置
    • US07705304B2
    • 2010-04-27
    • US12120053
    • 2008-05-13
    • Shigeru KawamataYoshinobu HoshinoAsako Kaneko
    • Shigeru KawamataYoshinobu HoshinoAsako Kaneko
    • H01J49/40
    • H01J37/28H01J37/265H01J2237/22H01J2237/24465H01J2237/24578
    • In three-dimensional shape measurement, a backscattered electron detection signal and selection signal generator in a control section controls, by selection signal, a signal switching section and a frame memory so that: detection signals from respective semiconductor elements are sequentially switched in the signal switching section in synchronization with a scanning frame of an electron beam on a sample; and the detection signals from the respective semiconductor elements can be sequentially recorded in recording addresses in the frame memory which correspond to the respective semiconductor elements. After four electron beam scanning sessions, each image data for three-dimensional shape measurement is recorded in the frame memory, and processed in a computing processing section for three-dimensional shape measurement, and the result can be displayed in a display section. The backscattered electron detection signal and selection signal generator in the control section is configured to include, for example, a counter updated in frame scanning units, and can be composed of a very simple circuit or software.
    • 在三维形状测量中,控制部分中的反向散射电子检测信号和选择信号发生器通过选择信号控制信号切换部分和帧存储器,使得:来自各个半导体元件的检测信号在信号切换 与样品上的电子束的扫描帧同步; 并且来自各个半导体元件的检测信号可以被顺序记录在对应于各个半导体元件的帧存储器中的记录地址中。 在四个电子束扫描会话之后,将用于三维形状测量的每个图像数据记录在帧存储器中,并在用于三维形状测量的计算处理部分中进行处理,并且可以将结果显示在显示部分中。 控制部中的背散射电子检测信号和选择信号发生器被配置为包括例如以帧扫描单位更新的计数器,并且可以由非常简单的电路或软件组成。
    • 2. 发明申请
    • Scanning Electron Microscope and Three-Dimensional Shape Measuring Device That Used It
    • 扫描电子显微镜和使用它的三维形状测量装置
    • US20080283747A1
    • 2008-11-20
    • US12120053
    • 2008-05-13
    • Shigeru KawamataYoshinobu HoshinoAsako Kaneko
    • Shigeru KawamataYoshinobu HoshinoAsako Kaneko
    • G01N23/225
    • H01J37/28H01J37/265H01J2237/22H01J2237/24465H01J2237/24578
    • In three-dimensional shape measurement, a backscattered electron detection signal and selection signal generator in a control section controls, by selection signal, a signal switching section and a frame memory so that: detection signals from respective semiconductor elements are sequentially switched in the signal switching section in synchronization with a scanning frame of an electron beam on a sample; and the detection signals from the respective semiconductor elements can be sequentially recorded in recording addresses in the frame memory which correspond to the respective semiconductor elements. After four electron beam scanning sessions, each image data for three-dimensional shape measurement is recorded in the frame memory, and processed in a computing processing section for three-dimensional shape measurement, and the result can be displayed in a display section. The backscattered electron detection signal and selection signal generator in the control section is configured to include, for example, a counter updated in frame scanning units, and can be composed of a very simple circuit or software.
    • 在三维形状测量中,控制部分中的反向散射电子检测信号和选择信号发生器通过选择信号控制信号切换部分和帧存储器,使得:来自各个半导体元件的检测信号在信号切换 与样品上的电子束的扫描帧同步; 并且来自各个半导体元件的检测信号可以被顺序记录在对应于各个半导体元件的帧存储器中的记录地址中。 在四个电子束扫描会话之后,将用于三维形状测量的每个图像数据记录在帧存储器中,并在用于三维形状测量的计算处理部分中进行处理,并且可以将结果显示在显示部分中。 控制部中的背散射电子检测信号和选择信号发生器被配置为包括例如以帧扫描单位更新的计数器,并且可以由非常简单的电路或软件组成。
    • 4. 发明授权
    • Ion milling device
    • 离子铣削装置
    • US08552407B2
    • 2013-10-08
    • US13386980
    • 2010-07-14
    • Asako KanekoHirobumi MutoAtsushi Kamino
    • Asako KanekoHirobumi MutoAtsushi Kamino
    • G01N1/32
    • H01J37/09G01N1/286H01J37/20H01J37/305H01J37/31
    • Disclosed is a shield (8, 10) disposed between an ion source (1) of an ion milling device and a sample (7) so as to be in contact with the sample. The shield is characterized by having a circular shape having an opening at the center, and by being capable of rotating about an axis (11) extending through the opening. Further, a groove is provided in the ion source-side surface of an end portion of the shield, and an inclined surface is provided on an end portion of the shield. Thus, an ion milling device having a shield, wherein the maximum number of machining operations can be increased, and the position of the shield can be accurately adjusted.
    • 公开了设置在离子铣削装置的离子源(1)和样品(7)之间以与样品接触的屏蔽(8,10)。 该屏蔽的特征在于具有在中心具有开口的圆形形状,并且能够绕延伸穿过开口的轴线(11)旋转。 此外,在屏蔽的端部的离子源侧表面设置有槽,并且在屏蔽的端部设置有倾斜面。 因此,具有屏蔽件的离子铣削装置,其中可以增加最大数量的加工操作,并且可以精确地调节护罩的位置。