会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Phosphor and method for preparing same
    • 荧光体及其制备方法
    • US5558814A
    • 1996-09-24
    • US337007
    • 1994-11-07
    • Shigeo ItohYoshihisa YonezawaHitoshi Toki
    • Shigeo ItohYoshihisa YonezawaHitoshi Toki
    • C09K11/08C09K11/00C09K11/62H01J29/20H01J61/44
    • C09K11/623
    • A phosphor capable of exhibiting luminescence with high efficiency by excitation due to impingement of electrons accelerated under an anode voltage of hundreds volts to about 2 kV thereon and a method for preparing the same are disclosed. Mn is ion-implanted in ZnGa.sub.2 O.sub.4 which is a matrix crystal of the phosphor deposited on a substrate. Three kinds of implantation energy of 150 keV, 90 keV and 30 keV are selected and the ion implantation is effected three times in the order of the level of the implantation energy. A concentration of Mn is rendered substantially constant within a depth range between 100 angstrom and 1000 angstrom of a depth of 2000 angstrom or less in a luminous region of the phosphor. The ion implantation thus carried out three times permits the phosphor to exhibit increased luminous efficiency as compared with one-time ion implantation. The ion implantation permits Mn acting as a luminous center to be dispersed over a desired depth of the phosphor, resulting in lattice defects in the phosphor being widely distributed, leading to a decrease in the concentration of defects in the phosphor.
    • 公开了一种荧光体,其能够通过在数百伏特至约2kV的阳极电压下加速的电子冲击而通过激发而以高效率显示发光,以及其制备方法。 在作为沉积在基板上的荧光体的矩阵晶体的ZnGa 2 O 4中离子注入Mn。 选择150keV,90keV和30keV的三种注入能量,并且按照注入能级的顺序进行三次离子注入。 在荧光体的发光区域中,在浓度为100埃至1000埃的深度范围内,Mn的浓度基本上保持恒定。 这样进行三次离子注入使得荧光体与一次离子注入相比表现出增加的发光效率。 离子注入允许作为发光中心的Mn分散在荧光体的所需深度上,导致荧光体中的晶格缺陷广泛分布,导致荧光体中缺陷的浓度降低。
    • 3. 发明授权
    • Powder agitator
    • 粉末搅拌器
    • US5347133A
    • 1994-09-13
    • US82460
    • 1993-06-25
    • Hitoshi TokiYoshihisa YonezawaShigeo Itoh
    • Hitoshi TokiYoshihisa YonezawaShigeo Itoh
    • C23C14/00B01F11/00C23C14/50H01J5/00
    • B01F11/0094
    • A powder agitator used for an ion implantation device or an ionized beam deposition device capable of exhibiting satisfactory powder agitating characteristics and minimizing positive charging on powders. The powder agitator includes a base, a vessel for receiving powders therein, a plurality of supports for supporting the vessel on the base, and a pair of piezoelectric elements arranged on the supports and functioning as a vibration generating section. Application of a voltage to the piezoelectric elements causes the vessel to be oscillated in a direction of rotation of the vessel and a speed of oscillation of the vessel to be varied depending on a direction of oscillation of the vessel, resulting in agitating the powders in the vessel.
    • 用于离子注入装置或电离束沉积装置的粉末搅拌器,其能够表现出令人满意的粉末搅拌特性并使粉末上的正电荷最小化。 粉末搅拌器包括基座,用于容纳粉末的容器,用于将容器支撑在基座上的多个支撑件和布置在支撑件上并用作振动产生部分的一对压电元件。 向压电元件施加电压使得容器在容器的旋转方向上振荡并且容器的振荡速度根据容器的振荡方向而变化,从而使粉末在 船只。
    • 4. 发明授权
    • Low-velocity electron excited phosphor and method for producing same
    • 低速电子激发荧光体及其制造方法
    • US5510154A
    • 1996-04-23
    • US160166
    • 1993-12-02
    • Shigeo ItohHitoshi TokiYoshihisa Yonezawa
    • Shigeo ItohHitoshi TokiYoshihisa Yonezawa
    • C09K11/08C23C14/48B05D3/06
    • C23C14/48C09K11/08
    • A low-velocity electron excited phosphor capable of exhibiting increased luminance and a method for producing the same. A matrix crystal for the phosphor is doped therein with an activator at implantation energy of 50 KeV by ion implantation, resulting in the activator entering a portion of the matrix crystal extending to a depth as small as 0.5 .mu.m from a surface thereof. Then, the phosphor is annealed for a reduced period of time as short as 10 seconds at a temperature of 900.degree. C. Such short-time annealing effectively prevents distribution of the activator in the matrix crystal formed during the implantation from being deeply spread into the matrix crystal by thermal diffusion. Thus, the activator concentratedly exists at only a portion of the matrix crystal in proximity to the surface thereof. Thus, the phosphor exhibits increased luminance as compared with a prior art, because luminescence of the phosphor is limited to the portion thereof in proximity to the surface.
    • 能够显示增加的亮度的低速电子激发荧光体及其制造方法。 通过离子注入,用50KV的注入能量在其中掺杂荧光体的矩阵晶体,其中激活剂进入基体晶体的一部分延伸到距其表面0.5μm的深度。 然后,在900℃的温度下,将荧光体退火短时间为10秒的时间。这种短时间退火有效地防止了在植入过程中形成的基体晶体中的活化剂分布深入到 矩阵晶体通过热扩散。 因此,活化剂仅在其表面附近仅存在于基体晶体的一部分。 因此,与现有技术相比,荧光体的亮度增加,因为荧光体的发光被限制在靠近表面的部分。