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1. 发明申请

US20110063895A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND SYSTEM 有权
标题翻译：半导体集成电路设备与系统
公开(公告)号：US20110063895A1
公开(公告)日：2011-03-17
申请号：US12855691
申请日：2010-08-12
申请人： Shigenobu KOMATSU , Masanao Yamaoka , Noriaki Maeda , Masao Morimoto , Yasuhisa Shimazaki , Yasuyuki Okuma , Toshiaki Sano
发明人： Shigenobu KOMATSU , Masanao Yamaoka , Noriaki Maeda , Masao Morimoto , Yasuhisa Shimazaki , Yasuyuki Okuma , Toshiaki Sano
IPC分类号： G11C11/417 , G11C11/412 , G11C5/14
CPC分类号： G11C11/417 , G11C5/06 , G11C5/14 , G11C11/413 , H01L27/092 , H01L27/1104
摘要： A semiconductor integrated circuit which can respond to changes of the amount of retained data at the time of standby is provided. The semiconductor integrated circuit comprises a logic circuit (logic) and plural SRAM modules. The plural SRAM modules perform power control independently of the logic circuit, and an independent power control is performed among the plural SRAM modules. Specifically, one terminal and the other terminal of a potential control circuit of each SRAM module are coupled to a cell array and a local power line, respectively. The local power line of one SRAM module and the local power line of the other SRAM module share a shared local power line. A power switch of one SRAM module and a power switch of the other SRAM module are coupled in common to the shared local power line.
摘要翻译：提供了可以对备用时的保留数据量的变化进行响应的半导体集成电路。半导体集成电路包括逻辑电路（逻辑）和多个SRAM模块。多个SRAM模块独立于逻辑电路进行功率控制，并且在多个SRAM模块之间执行独立的功率控制。具体地，每个SRAM模块的电位控制电路的一个端子和另一个端子分别耦合到单元阵列和本地电力线。一个SRAM模块的本地电源线和另一个SRAM模块的本地电源线共享一个共享的本地电源线。一个SRAM模块的电源开关和另一个SRAM模块的电源开关共同耦合到共享的本地电源线。

2. 发明申请

US20080144365A1 SEMICONDUCTOR INTEGRATED CIRCUIT AND MANUFACTURING METHOD THEREFOR 失效
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US20080144365A1
公开(公告)日：2008-06-19
申请号：US11943495
申请日：2007-11-20
申请人： Masanao YAMAOKA , Kenichi OSADA , Shigenobu KOMATSU
发明人： Masanao YAMAOKA , Kenichi OSADA , Shigenobu KOMATSU
IPC分类号： G11C11/34
CPC分类号： G11C11/417
摘要： In this invention, high manufacturing yield is realized and variations in threshold voltage of each MOS transistor in a CMOS•SRAM is compensated. Body bias voltages are applied to wells for MOS transistors of each SRAM memory cell in any active mode of an information holding operation, a write operation and a read operation of an SRAM. The threshold voltages of PMOS and NMOS transistors of the SRAM are first measured. Control information is respectively programmed into control memories according to the results of determination. The levels of the body bias voltages are adjusted based on the programs so that variations in the threshold voltages of the MOS transistors of the CMOS•SRAM are controlled to a predetermined error span. A body bias voltage corresponding to a reverse body bias or an extremely shallow forward body bias is applied to a substrate for the MOS transistors with an operating voltage applied to the source of each MOS transistor.
摘要翻译：在本发明中，实现了高制造成品率，并补偿了CMOS.SRAM中的每个MOS晶体管的阈值电压的变化。在SRAM的信息保持操作，写入操作和读取操作的任何活动模式中，将体偏置电压施加到每个SRAM存储器单元的MOS晶体管的阱。首先测量SRAM的PMOS和NMOS晶体管的阈值电压。控制信息根据测定结果分别被编程到控制存储器中。基于程序调整体偏置电压的电平，使得CMOS.SRAM的MOS晶体管的阈值电压的变化被控制到预定的误差范围。将对应于反体偏置或非常浅的正向体偏置的体偏置施加到施加到每个MOS晶体管的源极的工作电压的MOS晶体管的衬底。

3. 发明申请

US20120147662A1 Semiconductor Integrated Circuit and Manufacturing Method Thereof 失效
标题翻译：半导体集成电路及其制造方法
公开(公告)号：US20120147662A1
公开(公告)日：2012-06-14
申请号：US13350340
申请日：2012-01-13
申请人： Masanao YAMAOKA , Kenichi OSADA , Shigenobu KOMATSU
发明人： Masanao YAMAOKA , Kenichi OSADA , Shigenobu KOMATSU
IPC分类号： G11C11/40
CPC分类号： G11C11/417
摘要： High manufacturing yield is realized and variation in threshold voltage of each MOS transistor in a CMOS·SRAM is compensated. Body bias voltages are applied to wells for MOS transistors of each SRAM memory cell in any active mode of an information holding operation, a write operation and a read operation of an SRAM. Threshold voltages of PMOS and NMOS transistors of the SRAM are first measured. Control information is programmed into control memories according to results of determination. Levels of the body bias voltages are adjusted based on the programs so that variations in the threshold voltages of the MOS transistors of the CMOS·SRAM are controlled to a predetermined error span. Body bias voltage corresponding to a reverse body bias or an extremely shallow forward body bias is applied to a substrate for the MOS transistors with an operating voltage applied to the source of each MOS transistor.
摘要翻译：实现了高制造成品率，补偿了CMOS·SRAM中的每个MOS晶体管的阈值电压的变化。在SRAM的信息保持操作，写入操作和读取操作的任何活动模式中，将体偏置电压施加到每个SRAM存储器单元的MOS晶体管的阱。首先测量SRAM的PMOS和NMOS晶体管的阈值电压。控制信息根据确定结果被编程到控制存储器中。基于程序调整体偏置电压的电平，使得CMOS·SRAM的MOS晶体管的阈值电压的变化被控制到预定的误差范围。将对应于反体偏置或非常浅的正向体偏置的体偏置电压施加到施加到每个MOS晶体管的源极的工作电压的MOS晶体管的衬底。

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