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1. 发明授权

US08385847B2 Switching element, antenna switch circuit and radio frequency module using the same 有权
公开(公告)号：US08385847B2
公开(公告)日：2013-02-26
申请号：US12929940
申请日：2011-02-25
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

2. 发明授权

US08159282B2 Semiconductor integrated circuit and high frequency module with the same 有权
标题翻译：半导体集成电路与高频模块相同
公开(公告)号：US08159282B2
公开(公告)日：2012-04-17
申请号：US12615525
申请日：2009-11-10
申请人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
发明人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
IPC分类号： H03K17/687
CPC分类号： H03K17/693 , H03K17/063
摘要： The present invention is directed to reduce increase in the level of a harmonic signal of an RF (transmission) Tx output signal at the time of supplying an RF Tx signal to a bias generation circuit of an antenna switch. A semiconductor integrated circuit includes an antenna switch having a bias generation circuit, a Tx switch, and an antenna switch having a bias generation circuit, a transmitter switch, and a receiver (Rx) switch. The on/off state of a transistor of a Tx switch coupled between a Tx port and an I/O port is controlled by a Tx control bias. The on/off state of the transistors of the Rx switch coupled between the I/O port and a receiver (Rx) port is controlled by an RX control bias. A radio frequency (RF) signal input port of the bias generation circuit is coupled to the Tx port, and a negative DC output bias generated from a DC output port can be supplied to a gate control port of transistors of the Rx switch.
摘要翻译：本发明旨在减少在将RF Tx信号提供给天线开关的偏置产生电路时的RF（发送）Tx输出信号的谐波信号的电平的增加。半导体集成电路包括具有偏置产生电路，Tx开关和具有偏置产生电路，发射器开关和接收器（Rx））开关的天线开关的天线开关。耦合在Tx端口和I / O端口之间的Tx开关的晶体管的导通/截止状态由Tx控制偏置来控制。耦合在I / O端口和接收器（Rx）端口之间的Rx开关的晶体管的开/关状态由RX控制偏置来控制。偏置产生电路的射频（RF）信号输入端口耦合到Tx端口，并且可以将从DC输出端口产生的负DC输出偏压提供给Rx开关的晶体管的栅极控制端口。

3. 发明申请

US20110156983A1 Switching element, antenna switch circuit and radio frequency module using the same 有权
公开(公告)号：US20110156983A1
公开(公告)日：2011-06-30
申请号：US12929940
申请日：2011-02-25
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H01Q1/50 , H01L29/12
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

4. 发明授权

US07899412B2 Switching element, antenna switch circuit and radio frequency module using the same 有权
标题翻译：开关元件，天线开关电路和射频模块使用相同
公开(公告)号：US07899412B2
公开(公告)日：2011-03-01
申请号：US12805409
申请日：2010-07-29
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.
摘要翻译：提供了一种开关元件，其实现了在不增加插入损耗的情况下使多栅极的栅极之间的电位稳定，并且每个使用开关元件的天线开关电路和射频模块。开关元件包括形成在半导体衬底上的两个欧姆电极39,40，设置在两个欧姆电极之间的至少两个栅极电极41,42以及设置在至少两个栅电极之间的相邻栅电极之间的导电区域45，场效应晶体管由两个欧姆电极，至少两个栅极电极和导电区域构成。导电区域的宽度部分的宽度比插入在其一端的相邻栅电极之间的导电区域宽。相邻栅电极之间的距离比较宽部分的宽度窄。电阻器44,46通过较宽部分串联连接在两个欧姆电极之间。

5. 发明申请

US20100297960A1 Switching element, antenna switch circuit and radio frequency module using the same 有权
公开(公告)号：US20100297960A1
公开(公告)日：2010-11-25
申请号：US12805409
申请日：2010-07-29
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44 , H01L29/778
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

6. 发明申请

US20130069708A1 SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME 有权
标题翻译：半导体集成电路，使用该半导体集成电路的RF模块和使用该半导体集成电路的无线电通信终端装置
公开(公告)号：US20130069708A1
公开(公告)日：2013-03-21
申请号：US13677601
申请日：2012-11-15
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H03K17/687
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
摘要翻译：一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性，与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真可以减少靠近输入/输出端子I / O的-Rg3n。

7. 发明授权

US08330524B2 Semiconductor integrated circuit and high frequency module with the same 失效
标题翻译：半导体集成电路与高频模块相同
公开(公告)号：US08330524B2
公开(公告)日：2012-12-11
申请号：US13419194
申请日：2012-03-13
申请人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
发明人： Kaoru Katoh , Shigeki Koya , Shinichiro Takatani , Yasushi Shigeno , Akishige Nakajima , Takashi Ogawa
IPC分类号： H03K6/687
CPC分类号： H03K17/693 , H03K17/063
摘要： A semiconductor integrated circuit which reduces and increase in the level of a harmonic signal of an RF transmission output signal at the time of supplying an RF transmission signal to a bias generation circuit of an antenna switch, including an antenna switch having a bias generation circuit, a transmitter switch, and a receiver switch. The on/off state of a transistor of the transmitter switch coupled between a transmitter port and an I/O port is controlled by a transmit control bias. The on/off state of the transistors of the receiver switch coupled between the I/O port and a receiver port is controlled by a receiver control bias. An RF signal input port of the bias generation circuit is coupled to the transmit port, and a negative DC output bias generated from a DC output port is supplied to a gate control port of transistors of the receiver switch.
摘要翻译：一种半导体集成电路，其在将RF发送信号提供给天线开关的偏置产生电路时降低并增加RF发送输出信号的谐波信号的电平，包括具有偏置产生电路的天线开关，发射器开关和接收器开关。耦合在发送器端口和I / O端口之间的发送器开关的晶体管的开/关状态由发送控制偏置来控制。耦合在I / O端口和接收器端口之间的接收器开关的晶体管的开/关状态由接收器控制偏置来控制。偏置产生电路的RF信号输入端口耦合到发送端口，并且从DC输出端口产生的负DC输出偏置被提供给接收器开关的晶体管的栅极控制端口。

8. 发明申请

US20060118951A1 Switching element, antenna switch circuit and radio frequency module using the same 审中-公开
公开(公告)号：US20060118951A1
公开(公告)日：2006-06-08
申请号：US11291815
申请日：2005-12-02
申请人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
发明人： Takashi Ogawa , Shinichiro Takatani , Shigeki Koya , Hiroyuki Takazawa , Shinya Osakabe , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H01L23/34
CPC分类号： H01L27/0605 , H01L27/0629 , H01L29/42316 , H01L29/66462 , H01L29/7783 , H01L2924/0002 , H01L2924/00
摘要： A switching element is provided that realizes an stabilize a potential between the gates of the multi-gates without an increase in the insertion loss, and an antenna switch circuit and a radio frequency module each using the switch element. The switching element includes two ohmic electrodes 39, 40 formed on a semiconductor substrate, at least two gate electrodes 41, 42 disposed between the two ohmic electrodes, and a conductive region 45 disposed between the adjacent gate electrodes among the at least two gate electrodes, a field effective transistor being structured by the two ohmic electrodes, the at least two gate electrodes, and the conductive region. The conductive region has a wider portion that is wider in width than the conductive region interposed between the adjacent gate electrodes on one end thereof. The distance between the adjacent gate electrodes is narrower than the width of the wider portion. Resistors 44, 46 are connected in series between the two ohmic electrodes through the wider portion.

9. 发明授权

US08676132B2 Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the same 有权
标题翻译：半导体集成电路，使用其的RF模块，以及使用其的无线通信终端装置
公开(公告)号：US08676132B2
公开(公告)日：2014-03-18
申请号：US13677601
申请日：2012-11-15
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H04B1/44
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
摘要翻译：一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性，与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真可以减少靠近输入/输出端子I / O的-Rg3n。

10. 发明申请

US20120200335A1 SEMICONDUCTOR INTEGRATED CIRCUIT, RF MODULE USING THE SAME, AND RADIO COMMUNICATION TERMINAL DEVICE USING THE SAME 有权
标题翻译：半导体集成电路，使用该半导体集成电路的RF模块和使用该半导体集成电路的无线电通信终端装置
公开(公告)号：US20120200335A1
公开(公告)日：2012-08-09
申请号：US13448033
申请日：2012-04-16
申请人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
发明人： Shigeki Koya , Shinichiro Takatani , Takashi Ogawa , Akishige Nakajima , Yasushi Shigeno
IPC分类号： H03K17/687 , H03K17/74
CPC分类号： H03K17/687 , H04B1/006 , H04B1/406 , H04B1/525
摘要： One high-frequency switch Qm supplied with transmit and receive signals to ON, and another high-frequency switch Qn supplied with a signal of another system to OFF are controlled. In the other high-frequency switch Qn, to set V-I characteristics of near-I/O gate resistances Rg1n-Rg3n of a near-I/O FET Qn1 near to a common input/output terminal I/O connected with an antenna are set to be higher in linearity than V-I characteristics of middle-portion gate resistances Rg3n and Rg4n of middle-portion FETs Qn3 and Qn4. Thus, even in case that an uneven RF leak signal is supplied to near-I/O gate resistances Rg1n-Rg3n, and middle-portion gate resistances Rg3n and Rg4n, the distortion of current flowing through the near-I/O gate resistances Rg1n-Rg3n near to the input/output terminal I/O can be reduced.
摘要翻译：一个高频开关Qm提供发送和接收信号到ON，另一个高频开关Qn提供另一个系统的信号为OFF。在另一个高频开关Qn中，设定与天线连接的公共输入输出端子I / O附近的近I / O FET Qn1的近I / O栅极电阻Rg1n-Rg3n的VI特性，与中间部分FET Qn3和Qn4的中间部分栅极电阻Rg3n和Rg4n的VI特性的线性度相比更高。因此，即使在向近I / O栅极电阻Rg1n-Rg3n和中间部分栅极电阻Rg3n和Rg4n提供不均匀的RF泄漏信号的情况下，流过近I / O栅极电阻Rg1n的电流的失真可以减少靠近输入/输出端子I / O的-Rg3n。

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