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1. 发明授权

US06287430B1 Apparatus and method forming thin film 有权
标题翻译：装置和方法形成薄膜
公开(公告)号：US06287430B1
公开(公告)日：2001-09-11
申请号：US09467377
申请日：1999-12-21
申请人： Shigeharu Matsumoto , Kazuo Kikuchi , Yizhou Song , Takeshi Sakurai , Shinichiro Saisho
发明人： Shigeharu Matsumoto , Kazuo Kikuchi , Yizhou Song , Takeshi Sakurai , Shinichiro Saisho
IPC分类号： C23C1434
CPC分类号： C23C16/50 , C23C14/568 , H01J37/34 , H01J2237/32
摘要： The present invention is drawn to an apparatus for forming a thin film. The apparatus includes a vacuum chamber; a vacuum apparatus connected to the vacuum chamber; a holder placed in the vacuum chamber, which holder holds a substrate and is rotated by means of a rotating mechanism; a plasma CVD apparatus; and a sputtering apparatus, wherein the plasma CVD apparatus and the sputtering apparatus are placed in a single vacuum chamber and a thin film having an medium refractive index is formed on the substrate held by the holder, by means of the plasma CVD apparatus and the sputtering apparatus. The method making use of such an apparatus is also disclosed.
摘要翻译：本发明涉及用于形成薄膜的装置。该装置包括真空室; 连接到真空室的真空设备; 放置在真空室中的保持器，该保持器保持基板并通过旋转机构旋转; 等离子体CVD装置; 以及溅射装置，其中将等离子体CVD装置和溅射装置放置在单个真空室中，并且通过等离子体CVD装置和溅射在由保持器保持的基板上形成具有介质折射率的薄膜仪器。还公开了利用这种装置的方法。

2. 发明申请

US20060266291A1 Thin film forming device and thin film forming method 审中-公开
标题翻译：薄膜形成装置和薄膜形成方法
公开(公告)号：US20060266291A1
公开(公告)日：2006-11-30
申请号：US10558777
申请日：2004-05-31
申请人： Yizhou Song , Takeshi Sakurai , Takanori Murata
发明人： Yizhou Song , Takeshi Sakurai , Takanori Murata
IPC分类号： C23C16/00 , H05H1/24
CPC分类号： C23C14/0036 , C23C14/0078 , C23C14/083 , C23C14/10 , C23C14/352 , C23C14/358 , C23C14/564 , C23C14/568 , C23C14/5853 , C23C16/4404 , H01J37/32082 , H01J37/32467 , H01J37/32477 , H01L21/02164 , H01L21/02266 , H01L21/318 , H05H1/46
摘要： A thin film deposition apparatus comprising gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. An insulator is deposited on the inner wall surface of the vacuum container. The gas introducer introduces a reactive gas and an inert gas into a region where a plasma is generated by the plasma generator.
摘要翻译：一种薄膜沉积设备，包括用于将反应性气体引入真空容器的气体导入器，以及用于在真空容器内产生反应气体的等离子体的等离子体发生器。绝缘体沉积在真空容器的内壁表面上。气体引入器将反应性气体和惰性气体引入到等离子体发生器产生等离子体的区域中。

3. 发明申请

US20070240637A1 Thin-Film Forming Apparatus 审中-公开
标题翻译：薄膜成型装置
公开(公告)号：US20070240637A1
公开(公告)日：2007-10-18
申请号：US11659388
申请日：2005-08-05
申请人： Yizhou Song , Tetsuji Arai , Koki Chiba , Takeshi Sakurai , Yousong Jiang
发明人： Yizhou Song , Tetsuji Arai , Koki Chiba , Takeshi Sakurai , Yousong Jiang
IPC分类号： H01L21/31 , C23C14/34
CPC分类号： C23C14/35 , C23C14/34 , C23C14/564
摘要： A thin-film forming apparatus is provided capable of forming a thin-film by bringing ions of some degree in plasma into contact with the thin-film. This thin-film forming apparatus comprises a plasma generator disposed at a position corresponding to an opening of a vacuum chamber for producing plasma in the vacuum chamber, a base plate holder for holding a substrate in the vacuum chamber, and an ion quencher disposed between the plasma generator and the base plate holder. When the plasma generator is projected directly onto the base plate holder, the projection image of plasma generator shielded by the ion quencher has an area smaller than the residual image of plasma generator projected onto the base plate holder.
摘要翻译：提供能够通过使等离子体中的离子与薄膜接触而形成薄膜的薄膜形成装置。该薄膜形成装置包括：等离子体发生器，其设置在与真空室的真空室的开口相对应的位置，用于在真空室中产生等离子体;基板保持器，用于将基板保持在真空室中;以及离子猝灭器，等离子发生器和基板支架。当等离子体发生器直接投影到基板支架上时，由离子猝灭器屏蔽的等离子体发生器的投影图像的面积小于投影到基板支架上的等离子体发生器的残留图像。

4. 发明申请

US20060189046A1 Thin film forming method and forming device therefor 审中-公开
标题翻译：薄膜形成方法及其成型装置
公开(公告)号：US20060189046A1
公开(公告)日：2006-08-24
申请号：US10550506
申请日：2004-06-02
申请人： Yizhou Song , Takeshi Sakurai
发明人： Yizhou Song , Takeshi Sakurai
IPC分类号： H01L21/84 , H01L27/148 , C23C16/00
CPC分类号： C23C14/5846 , C23C14/0078 , C23C14/568
摘要： A method of forming a thin film of the present invention comprises: an optical characteristic adjusting step of repeatedly conveying a substrate holder between a zone to perform an intermediate thin film forming step and a zone to perform a film composition converting step while controlling a conveying speed of the substrate holder for holding a substrate, and adjusting a film composition of a finally formed thin film to form the thin film having an optical characteristic value of a region where a hysteresis phenomenon occurs.
摘要翻译：本发明的薄膜形成方法包括：光学特性调整步骤，在进行中间薄膜形成工序的区域和区域之间反复输送基板保持件，进行膜组成转换工序，同时控制输送速度用于保持基板，并且调整最终形成的薄膜的膜组成以形成具有发生滞后现象的区域的光学特性值的薄膜。

5. 发明申请

US20060124455A1 Thin film forming device and thin film forming method 审中-公开
标题翻译：薄膜形成装置和薄膜形成方法
公开(公告)号：US20060124455A1
公开(公告)日：2006-06-15
申请号：US10559326
申请日：2003-06-02
申请人： Yizhou Song , Takeshi Sakurai , Takanori Murata
发明人： Yizhou Song , Takeshi Sakurai , Takanori Murata
IPC分类号： C23C14/00
CPC分类号： C23C14/0036 , C23C14/0078 , C23C14/083 , C23C14/10 , C23C14/352 , C23C14/358 , C23C14/564 , C23C14/568 , C23C14/5853 , C23C16/4404 , H01J37/32082 , H01J37/32467 , H01J37/32477 , H01L21/02164 , H01L21/02266 , H01L21/318 , H05H1/46
摘要： A thin film deposition apparatus of the present invention includes a vacuum container for maintaining a vacuum therein, gas introducer for introducing a reactive gas into the vacuum container, and plasma generator for generating a plasma of the reactive gas within the vacuum container. A wall surface within the vacuum container is coated with pyrolytic boron nitride. The plasma generator comprises a dielectric wall provided on an outer wall of the vacuum container, the first antenna having a spiral shape, the second antenna having a spiral shape, and the conductor wire for connecting the first and second antennas to an RF power supply, antenna fixing mechanism and position adjustor for antennas.
摘要翻译：本发明的薄膜沉积装置包括用于在其中保持真空的真空容器，用于将真空容器内的反应性气体导入的气体引导器，以及用于在真空容器内产生反应性气体等离子体的等离子体发生器。真空容器内的壁表面涂覆有热解氮化硼。等离子体发生器包括设置在真空容器的外壁上的电介质壁，第一天线具有螺旋形状，第二天线具有螺旋形状，以及用于将第一和第二天线连接到RF电源的导线，天线固定机构和天线位置调节器。

6. 发明申请

US20130213852A1 ELECTRICAL ELEMENT PACKAGE 审中-公开
标题翻译：电子元件包装
公开(公告)号：US20130213852A1
公开(公告)日：2013-08-22
申请号：US13876662
申请日：2011-09-30
申请人： Yasuo Yamazaki , Toru Shiragami , Noriaki Masuda , Takeshi Sakurai , Hiroki Yamazaki
发明人： Yasuo Yamazaki , Toru Shiragami , Noriaki Masuda , Takeshi Sakurai , Hiroki Yamazaki
IPC分类号： B65D85/00
CPC分类号： B65D85/00 , C03C3/19 , C03C8/08 , C03C8/24 , H01L51/5246 , H01L2924/16195 , H05B33/04
摘要： Provided is an electrical element package, comprising an element substrate on which an electrical element is provided, a sealing substrate provided at a distance from a surface of the element substrate on a side of the electrical element so as to be opposed to the element substrate, and a glass frit for hermetically sealing a gap between the element substrate and the sealing substrate so as to surround the electrical element, wherein the electrical element package comprises a protective film for protecting an electrode from laser light applied in welding the glass frit, the protective film being provided between the element substrate and the glass frit.
摘要翻译：提供一种电气元件封装，包括其上设置有电气元件的元件基板，密封基板，其设置在元件基板的与元件基板相对的一侧上距元件基板的表面一定距离处，以及用于密封元件基板和密封基板之间的间隙以围绕电气元件的玻璃料，其中电气元件封装包括用于保护电极免受焊接玻璃料时施加的激光的保护膜，该保护膜膜被提供在元件基底和玻璃料之间。

7. 发明申请

US20120307386A1 REFLECTION MEMBER 审中-公开
标题翻译：反射会员
公开(公告)号：US20120307386A1
公开(公告)日：2012-12-06
申请号：US13522337
申请日：2011-04-25
申请人： Takeshi Sakurai
发明人： Takeshi Sakurai
IPC分类号： G02B1/10
CPC分类号： C23C14/081 , C03C17/36 , C03C17/3607 , C03C17/3644 , C03C17/3647 , C03C17/3663 , C23C14/185 , C23C28/322 , C23C28/345 , G02B1/105 , G02B1/14 , G02B5/0808
摘要： Provided is a reflection member including a silver reflective coating and having excellent thermal resistance. A reflection member (1) includes a reflection member body (11), a silver reflective coating (13), and a first protective film (15). The silver reflective coating (13) is formed on the reflection member body (11). The silver reflective coating (13) is made of silver or a silver-containing alloy. The first protective film (15) is formed on the silver reflective coating (13). The first protective film (15) is made of Ti, Ta or Nb.
摘要翻译：提供一种反射构件，其包括银反射涂层并具有优异的耐热性。反射构件（1）包括反射构件主体（11），银反射涂层（13）和第一保护膜（15）。银反射涂层（13）形成在反射构件主体（11）上。银反射涂层（13）由银或含银合金制成。第一保护膜（15）形成在银反射涂层（13）上。第一保护膜（15）由Ti，Ta或Nb制成。

8. 发明授权

US5468724A High temperature oxide superconductor 失效
标题翻译：高温氧化物超导体
公开(公告)号：US5468724A
公开(公告)日：1995-11-21
申请号：US68587
申请日：1993-05-27
申请人： Takahiro Wada , Shin-ichi Koriyama , Takeshi Sakurai , Nobuo Suzuki , Takayuki Miyatake , Hisao Yamauchi , Naoki Koshizuka , Shoji Tanaka
发明人： Takahiro Wada , Shin-ichi Koriyama , Takeshi Sakurai , Nobuo Suzuki , Takayuki Miyatake , Hisao Yamauchi , Naoki Koshizuka , Shoji Tanaka
IPC分类号： C01G3/00 , C04B35/45 , H01L39/12 , H01B12/00
CPC分类号： C01G3/006 , C04B35/4504 , H01L39/126 , C01P2002/72 , C01P2002/77 , C01P2002/88 , C01P2004/80 , C01P2006/14 , Y10S505/779 , Y10S505/78
摘要： Disclosed herein are high-temperature oxide superconductors of RBa.sub.2 Cu.sub.4 O.sub.8 type, with Ba partly replaced by Sr or Ca, or with R and Ba partly replaced by Ca and Sr, respectively, as represented by the chemical composition formula of R(Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8 or R(Ba.sub.1-z Ca.sub.z).sub.2 Cu.sub.4 O.sub.8 or (R.sub.1-x Ca.sub.x) (Ba.sub.1-y Sr.sub.y).sub.2 Cu.sub.4 O.sub.8. They exhibit superconductivity at high temperatures. Especially, the last one exhibits superconductivity at a higher temperature than the former two. All of them can be made with a less amount of Ba as a deleterious substance, and the first two have improved sinterability. The best results are obtained when they are produced by the process involving the hot hydrostatic pressure treatment of the mixture of raw materials at 850.degree.-1100.degree. C. in an atmosphere composed of an inert gas and oxygen. The process permits a wider selection of Ba raw materials.
摘要翻译：本文公开了RBa2Cu4O8型的高温氧化物超导体，其中Ba部分被Sr或Ca取代，或者R和Ba分别被Ca和Sr部分替代，如R（Ba1-ySry）2Cu4O8的化学组成式所示或R（Ba1-zCaz）2 Cu4O8或（R1-xCax）（Ba1-ySry）2Cu4O8。它们在高温下表现出超导性。特别地，最后一个在比前两个更高的温度下表现出超导性。所有这些都可以用少量的Ba作为有害物质，前两种具有改善的烧结性。通过在惰性气体和氧气组成的气氛中，在850〜-1100℃的原料混合物进行热静水压处理的方法制造时，得到最好的结果。该过程允许更广泛地选择Ba原料。

9. 发明授权

US5445252A Charge cord and retraction system for electric vehicle 失效
标题翻译：电动车充电线和收线系统
公开(公告)号：US5445252A
公开(公告)日：1995-08-29
申请号：US279896
申请日：1994-07-25
申请人： Thomas S. McKee , Takeshi Sakurai
发明人： Thomas S. McKee , Takeshi Sakurai
IPC分类号： H02G11/02
CPC分类号： B60L11/1825 , B60L11/1816 , B65H75/368 , B65H75/425 , B65H75/4402 , B65H75/48 , H02G11/02 , B60L2230/12 , B65H2701/34 , B65H2701/3914 , Y02T10/7005 , Y02T10/7088 , Y02T90/121 , Y02T90/128 , Y02T90/14
摘要： A charging cord for supplying electric current to an electric power storing device of an electric vehicle includes an electrical cable having a first end and a second end, the first end being operatively connected to the electric power storing device and the second end being adapted to be connected to an electrical power supply. A housing is provided for supporting the electrical cable along a predetermined length thereof. The housing includes a plurality of section members pivotally connected relative to each other for permitting limited lateral motion in a single plane to maintain the charging cord a predetermined distance above the ground surface.
摘要翻译：用于向电动车辆的蓄电装置供给电流的充电线包括具有第一端和第二端的电缆，所述第一端可操作地连接到所述蓄电装置，所述第二端适于连接到电源。设置有用于沿预定长度支撑电缆的壳体。壳体包括多个相对于彼此枢转地连接的部件，以允许在单个平面中的有限横向运动，以将充电线保持在地面上方预定的距离。

10. 发明授权

US09255310B2 Cu—Mg—P based copper alloy material and method of producing the same 有权
标题翻译： Cu-Mg-P系铜合金材料及其制造方法
公开(公告)号：US09255310B2
公开(公告)日：2016-02-09
申请号：US12801359
申请日：2010-06-04
申请人： Takeshi Sakurai , Yoshihiro Kameyama , Yoshio Abe
发明人： Takeshi Sakurai , Yoshihiro Kameyama , Yoshio Abe
IPC分类号： C22C9/00 , H01B5/02 , C22F1/08
CPC分类号： C22C9/00 , C22F1/08
摘要： A copper alloy material includes, by mass %, Mg of 0.3 to 2%, P of 0.001 to 0.1%, and the balance including Cu and inevitable impurities. An area fraction of such crystal grains that an average misorientation between all the pixels in each crystal grain is less than 4° is 45 to 55% of a measured area, when orientations of all the pixels in the measured area of the surface of the copper alloy material are measured by an EBSD method with a scanning electron microscope of an electron backscattered diffraction image system and a boundary in which a misorientation between adjacent pixels is 5° or more is considered as a crystal grain boundary, and a tensile strength is 641 to 708 N/mm2, and a bending elastic limit value is 472 to 503 N/mm2.
摘要翻译：铜合金材料以质量％计含有0.3〜2％的Mg，0.001〜0.1％的P，余量包含Cu和不可避免的杂质。在每个晶粒中的所有像素之间的平均取向度小于4°的这种晶粒的面积分数是测量面积的45至55％，当铜的表面的测量区域中的所有像素的取向合金材料通过电子背散射衍射图像系统的扫描电子显微镜和相邻像素之间的取向偏差为5°以上的边界的EBSD法测定为晶界，拉伸强度为641〜 708N / mm2，弯曲弹性极限值为472〜503N / mm2。

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