专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08202779B2 Methods for forming a memory cell having a top oxide spacer 有权
标题翻译：形成具有顶部氧化物间隔物的存储单元的方法
公开(公告)号：US08202779B2
公开(公告)日：2012-06-19
申请号：US12891310
申请日：2010-09-27
申请人： Shenqing Fang , Angela Hui , Gang Xue , Alexander Nickel , Kashmir Sahota , Scott Bell , Chun Chen , Wai Lo
发明人： Shenqing Fang , Angela Hui , Gang Xue , Alexander Nickel , Kashmir Sahota , Scott Bell , Chun Chen , Wai Lo
IPC分类号： H01L21/336
CPC分类号： H01L27/11568 , H01L21/28282 , H01L29/792
摘要： Methods for fabricating a semiconductor memory cell that has a spacer layer are disclosed. A method includes forming a plurality of source/drain regions in a substrate where the plurality of source/drain regions are formed between trenches, forming a first oxide layer above the plurality of source/drain regions and in the trenches, forming a charge storage layer above the oxide layer and separating the charge storage layer in the trenches where a space is formed between separated portions of the charge storage layer. The method further includes forming a spacer layer to fill the space between the separated portions of the charge storage layer and to rise a predetermined distance above the space. A second oxide layer is formed above the charge storage layer and the spacer layer and a polysilicon layer is formed above the second oxide layer.
摘要翻译：公开了制造具有间隔层的半导体存储单元的方法。一种方法包括在衬底中形成多个源极/漏极区域，其中多个源极/漏极区域形成在沟槽之间，在多个源极/漏极区域上方和沟槽中形成第一氧化物层，形成电荷存储层在电荷存储层的分离部分之间，在形成空间的沟槽中分离电荷存储层。该方法还包括形成间隔层以填充电荷存储层的分离部分之间的空间并在空间上方上升预定距离。在电荷存储层和间隔层上方形成第二氧化物层，并且在第二氧化物层上方形成多晶硅层。

2. 发明授权

US08384146B2 Methods for forming a memory cell having a top oxide spacer 有权
标题翻译：形成具有顶部氧化物间隔物的存储单元的方法
公开(公告)号：US08384146B2
公开(公告)日：2013-02-26
申请号：US13428848
申请日：2012-03-23
申请人： Shenqing Fang , Angela Hui , Gang Xue , Alexander Nickel , Kashmir Sahota , Scott Bell , Chun Chen , Wai Lo
发明人： Shenqing Fang , Angela Hui , Gang Xue , Alexander Nickel , Kashmir Sahota , Scott Bell , Chun Chen , Wai Lo
IPC分类号： H01L29/76
CPC分类号： H01L27/11568 , H01L21/28282 , H01L29/792
摘要： Methods for fabricating a semiconductor memory cell that has a spacer layer are disclosed. A method includes forming a plurality of source/drain regions in a substrate where the plurality of source/drain regions are formed between trenches, forming a first oxide layer above the plurality of source/drain regions and in the trenches, forming a charge storage layer above the oxide layer and separating the charge storage layer in the trenches where a space is formed between separated portions of the charge storage layer. The method further includes forming a spacer layer to fill the space between the separated portions of the charge storage layer and to rise a predetermined distance above the space. A second oxide layer is formed above the charge storage layer and the spacer layer and a polysilicon layer is formed above the second oxide layer.
摘要翻译：公开了制造具有间隔层的半导体存储单元的方法。一种方法包括在衬底中形成多个源极/漏极区域，其中多个源极/漏极区域形成在沟槽之间，在多个源极/漏极区域上方和沟槽中形成第一氧化物层，形成电荷存储层在电荷存储层的分离部分之间，在形成空间的沟槽中分离电荷存储层。该方法还包括形成间隔层以填充电荷存储层的分离部分之间的空间并在空间上方上升预定距离。在电荷存储层和间隔层上方形成第二氧化物层，并且在第二氧化物层上方形成多晶硅层。

3. 发明授权

US08035153B2 Self-aligned patterning method by using non-conformal film and etch for flash memory and other semiconductor applications 有权
标题翻译：通过使用非保形膜和蚀刻用于闪存和其他半导体应用的自对准图案化方法
公开(公告)号：US08035153B2
公开(公告)日：2011-10-11
申请号：US12788177
申请日：2010-05-26
申请人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
发明人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
IPC分类号： H01L29/788
CPC分类号： H01L21/28282 , H01L27/11568
摘要： A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
摘要翻译：公开了一种用于制造具有自对准陷阱层的存储器件的方法，其被优化用于结垢。在本发明中，在电荷俘获层上沉积非保形膜，以在芯源极/漏极区域的顶部形成厚膜，并在STI沟槽顶部形成夹断和空隙或窄通道。在非保形膜上进行蚀刻以打开夹断或在非保形状态下加宽窄通道。然后在核心单元之间完全或部分蚀刻捕获层。去除非保形膜。并形成顶部氧化物。如果捕获层被部分蚀刻，则顶部氧化物将剩余的陷阱层转化为氧化物，并且因此隔离陷阱层。

4. 发明申请

US20080265301A1 Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications 有权
标题翻译：通过使用非保形膜的自对准图案化方法，并对闪存和其他半导体应用进行回蚀
公开(公告)号：US20080265301A1
公开(公告)日：2008-10-30
申请号：US11796582
申请日：2007-04-26
申请人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillips Jones , Mark Chang , Minh-Van Ngo
发明人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillips Jones , Mark Chang , Minh-Van Ngo
IPC分类号： H01L29/788 , H01L21/3205
CPC分类号： H01L21/28282 , H01L27/11568
摘要： A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
摘要翻译：公开了一种用于制造具有自对准陷阱层的存储器件的方法，其被优化用于缩放。在本发明中，在电荷俘获层上沉积非保形膜，以在芯源极/漏极区域的顶部形成厚膜，并在STI沟槽顶部形成夹断和空隙或窄通道。在非保形膜上进行蚀刻以打开夹断或在非保形状态下加宽窄通道。然后在核心单元之间完全或部分蚀刻捕获层。去除非保形膜。并形成顶部氧化物。如果捕获层被部分蚀刻，则顶部氧化物将剩余的陷阱层转化为氧化物，并且因此隔离陷阱层。

5. 发明申请

US20100230743A1 SELF-ALIGNED PATTERNING METHOD BY USING NON-CONFORMAL FILM AND ETCH FOR FLASH MEMORY AND OTHER SEMICONDUCTOR APPLICATIONS 有权
标题翻译：通过使用非一致性膜和闪存存储器和其他半导体应用的自对准图形方法
公开(公告)号：US20100230743A1
公开(公告)日：2010-09-16
申请号：US12788177
申请日：2010-05-26
申请人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
发明人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
IPC分类号： H01L29/792
CPC分类号： H01L21/28282 , H01L27/11568
摘要： A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
摘要翻译：公开了一种用于制造具有自对准陷阱层的存储器件的方法，其被优化用于缩放。在本发明中，在电荷俘获层上沉积非保形膜，以在芯源极/漏极区域的顶部形成厚膜，并在STI沟槽顶部形成夹断和空隙或窄通道。在非保形膜上进行蚀刻以打开夹断或在非保形状态下加宽窄通道。然后在核心单元之间完全或部分蚀刻捕获层。去除非保形膜。并形成顶部氧化物。如果捕获层被部分蚀刻，则顶部氧化物将剩余的陷阱层转化为氧化物，并且因此隔离陷阱层。

6. 发明授权

US07732276B2 Self-aligned patterning method by using non-conformal film and etch back for flash memory and other semiconductor applications 有权
标题翻译：通过使用非保形膜的自对准图案化方法，并对闪存和其他半导体应用进行回蚀
公开(公告)号：US07732276B2
公开(公告)日：2010-06-08
申请号：US11796582
申请日：2007-04-26
申请人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
发明人： Shenqing Fang , Jihwan Choi , Calvin Gabriel , Fei Wang , Angela Hui , Alexander Nickel , Zubin Patel , Phillip Jones , Mark Chang , Minh-Van Ngo
IPC分类号： H01L21/336
CPC分类号： H01L21/28282 , H01L27/11568
摘要： A method for fabricating a memory device with a self-aligned trap layer which is optimized for scaling is disclosed. In the present invention, a non-conformal film is deposited over the charge trapping layer to form a thick film on top of the core source/drain region and a pinch off and a void or a narrow channel at the top of the STI trench. An etch is performed on the non-conformal film to open pinch-off or widen the narrow channel in the non-conformal. The trapping layer is then completely or partially etched between the core cells. The non-conformal film is removed. And a top oxide is formed. The top oxide converts the remaining trap layer to oxide if the trapping layer is partially etched and thus isolate the trap layer.
摘要翻译：公开了一种用于制造具有自对准陷阱层的存储器件的方法，其被优化用于缩放。在本发明中，在电荷俘获层上沉积非保形膜，以在芯源极/漏极区域的顶部形成厚膜，并在STI沟槽顶部形成夹断和空隙或窄通道。在非保形膜上进行蚀刻以打开夹断或在非保形状态下加宽窄通道。然后在核心单元之间完全或部分蚀刻捕获层。去除非保形膜。并形成顶部氧化物。如果捕获层被部分蚀刻，则顶部氧化物将剩余的陷阱层转化为氧化物，并且因此隔离陷阱层。

7. 发明授权

US08017870B2 Fastening device for a line 有权
标题翻译：紧固装置为一条线
公开(公告)号：US08017870B2
公开(公告)日：2011-09-13
申请号：US12302087
申请日：2007-07-13
申请人： Keiji Kawakami , Alexander Nickel
发明人： Keiji Kawakami , Alexander Nickel
IPC分类号： H02G3/00
CPC分类号： B60R16/0222 , H02G3/0475 , Y10T16/063
摘要： A fastening device for a line, in particular for an electric cable (12) in a motor vehicle, is proposed, the fastening device having a bush (10) which can be locked in a holder (18), at least partially surrounds the line, is made of elastically deformable material and is fastened releaseably in a cutout (16) of the holder (18) by means of a contour (14). According to the invention, the surface of a bush (10), which is injection-moulded from plastic, is of segmented design in order to obtain easier deformability of the bush when fitting it into an associated holder (18).
摘要翻译：提出了一种用于线路的紧固装置，特别是用于机动车辆中的电缆（12）的紧固装置，所述紧固装置具有可锁定在保持器（18）中的衬套（10），至少部分地围绕线由弹性变形材料制成，并且通过轮廓（14）可释放地固定在保持器（18）的切口（16）中。根据本发明，由塑料注射成型的衬套（10）的表面是分段设计的，以便在将衬套安装到相关联的保持器（18）中时更容易地变形。

8. 发明申请

US20080153236A1 FLASH MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME 审中-公开
标题翻译：闪存存储器件及其制造方法
公开(公告)号：US20080153236A1
公开(公告)日：2008-06-26
申请号：US11615425
申请日：2006-12-22
申请人： Ning Cheng , Kuo-Tung Chang , Hiroyuki Kinoshita , Minh-Van Ngo , Fred Cheung , Alexander Nickel
发明人： Ning Cheng , Kuo-Tung Chang , Hiroyuki Kinoshita , Minh-Van Ngo , Fred Cheung , Alexander Nickel
IPC分类号： H01L21/336
CPC分类号： H01L29/66833 , H01L27/115 , H01L27/11568
摘要： Flash memory devices and methods for fabricating the same are provided. A method for fabricating a memory device comprises the steps of fabricating a first gate stack and a second gate stack overlying a P-type silicon substrate and implanting an impurity dopant into the substrate substantially between the first gate stack and the second gate stack to form an impurity-doped region of the substrate. A channel region underlies the first gate stack adjacent to the impurity-doped region. An intrinsically tensile-stressed insulating member is formed between the first and the second gate stacks and overlying the impurity-doped region. The tensile-stressed insulating member causes a uniaxial lateral tensile stress to be transmitted to the first channel region. A word line is formed overlying the intrinsically tensile-stressed insulating member and in electrical contact with the first gate stack and the second gate stack.
摘要翻译：提供闪存器件及其制造方法。一种用于制造存储器件的方法包括以下步骤：制造覆盖P型硅衬底的第一栅极堆叠和第二栅极堆叠，并且基本上在第一栅极堆叠和第二栅极堆叠之间将杂质掺杂剂注入到衬底中，以形成衬底的杂质掺杂区域。位于与杂质掺杂区相邻的第一栅叠层下方的沟道区。在第一和第二栅极堆叠之间并且覆盖杂质掺杂区域上形成本征拉伸应力的绝缘构件。拉伸应力绝缘构件使单向横向拉伸应力传递到第一沟道区域。在本征拉伸应力绝缘构件上形成字线并且与第一栅极堆叠和第二栅极堆叠电接触。

9. 发明申请

US20100109067A1 SiH4 soak for low hydrogen SiN deposition to improve flash memory device performance 有权
标题翻译： SiH4浸泡用于低氢SiN沉积，以提高闪存器件的性能
公开(公告)号：US20100109067A1
公开(公告)日：2010-05-06
申请号：US12290916
申请日：2008-11-05
申请人： Sung Jin Kim , Alexander Nickel , Minh-Van Ngo , Hieu Trung Pham , Masato Tsuboi , Shinich Imada
发明人： Sung Jin Kim , Alexander Nickel , Minh-Van Ngo , Hieu Trung Pham , Masato Tsuboi , Shinich Imada
IPC分类号： H01L21/31 , H01L29/788
CPC分类号： H01L21/3185 , H01L21/02074 , H01L21/28282 , H01L29/792
摘要： Prior to deposition of a silicon nitride (SiN) layer on a structure, a non-plasma enhanced operation is undertaken wherein the structure is exposed to silane (SiH4) flow, reducing the overall exposure of the structure to hydrogen radicals. This results in the silicon nitride being strongly bonded to the structure and in improved performance.
摘要翻译：在结构上沉积氮化硅（SiN）层之前，进行非等离子体增强操作，其中结构暴露于硅烷（SiH 4）流，从而减少了结构对氢自由基的总体暴露。这导致氮化硅牢固地结合到结构上并且具有改进的性能。

10. 发明申请

US20090242235A1 FASTENING DEVICE FOR A LINE 有权
标题翻译：一线快速装置
公开(公告)号：US20090242235A1
公开(公告)日：2009-10-01
申请号：US12302087
申请日：2007-07-13
申请人： Keiji Kawakami , Alexander Nickel
发明人： Keiji Kawakami , Alexander Nickel
IPC分类号： H02G3/00 , B60R16/02
CPC分类号： B60R16/0222 , H02G3/0475 , Y10T16/063
摘要： A fastening device for a line, in particular for an electric cable (12) in a motor vehicle, is proposed, the fastening device having a bush (10) which can be locked in a holder (18), at least partially surrounds the line, is made of elastically deformable material and is fastened releaseably in a cutout (16) of the holder (18) by means of a contour (14). According to the invention, the surface of a bush (10), which is injection-moulded from plastic, is of segmented design in order to obtain easier deformability of the bush when fitting it into an associated holder (18).
摘要翻译：提出了一种用于线路的紧固装置，特别是用于机动车辆中的电缆（12）的紧固装置，所述紧固装置具有可锁定在保持器（18）中的衬套（10），至少部分地围绕线由弹性变形材料制成，并且通过轮廓（14）可释放地固定在保持器（18）的切口（16）中。根据本发明，由塑料注射成型的衬套（10）的表面是分段设计的，以便在将衬套安装到相关联的保持器（18）中时更容易地变形。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式