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1. 发明授权

US07268382B2 DRAM cells 失效
标题翻译： DRAM单元
公开(公告)号：US07268382B2
公开(公告)日：2007-09-11
申请号：US11449433
申请日：2006-06-07
申请人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
发明人： Shenlin Chen , Trung Tri Doan , Guy T. Blalock , Lyle D. Breiner , Er-Xuan Ping
IPC分类号： H01L29/72
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964
摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
摘要翻译：本发明包括形成坚固的含半导体的表面的方法。在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。将种子退火以形成坚固的含半导体的表面。第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。本发明还包括包括粗糙表面的半导体结构。坚固的表面可以是例如坚固的硅。

2. 发明申请

US20060237763A1 Electronic systems 失效
公开(公告)号：US20060237763A1
公开(公告)日：2006-10-26
申请号：US11449431
申请日：2006-06-07
申请人： Shenlin Chen , Trung Doan , Guy Blalock , Lyle Breiner , Er-Xuan Ping
发明人： Shenlin Chen , Trung Doan , Guy Blalock , Lyle Breiner , Er-Xuan Ping
IPC分类号： H01L29/94
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964
摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.

3. 发明授权

US07034353B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
公开(公告)号：US07034353B2
公开(公告)日：2006-04-25
申请号：US09965240
申请日：2001-09-26
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

4. 发明授权

US07023039B2 Capacitor structures with dual-sided electrode 失效
标题翻译：具有双面电极的电容结构
公开(公告)号：US07023039B2
公开(公告)日：2006-04-04
申请号：US10234562
申请日：2002-09-03
申请人： Shenlin Chen , Er-Xuan Ping
发明人： Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L27/108
CPC分类号： H01L28/84 , H01L27/0805 , H01L27/10852 , H01L27/10855 , H01L28/91 , Y10S438/964
摘要： The invention includes a method of forming a capacitor electrode. A sacrificial material sidewall is provided to extend at least partially around an opening. A first silicon-containing material is formed within the opening to partially fill the opening, and is doped with conductivity-enhancing dopant. A second silicon-containing material is formed within the partially filled opening, and is provided to be less heavily doped with conductivity-enhancing dopant than is the first silicon-containing material. At least some of the second silicon-containing material is converted into hemispherical grain silicon, and at least some of the sacrificial material sidewall is removed. The invention also encompasses methods of forming capacitors and capacitor assemblies incorporating the above-described capacitor electrode. Further, the invention encompasses capacitor assemblies, and capacitor structures.
摘要翻译：本发明包括形成电容器电极的方法。提供牺牲材料侧壁以至少部分地围绕开口延伸。在开口内形成第一含硅材料以部分地填充开口，并且掺杂有导电性增强掺杂剂。第二含硅材料形成在部分填充的开口内，并且被提供为比第一含硅材料低掺杂导电性增强掺杂剂。第二含硅材料中的至少一些被转换成半球形晶粒硅，并且去除至少一些牺牲材料侧壁。本发明还包括形成具有上述电容器电极的电容器和电容器组件的方法。此外，本发明包括电容器组件和电容器结构。

5. 发明授权

US06870210B2 Dual-sided capacitor 失效
标题翻译：双面电容
公开(公告)号：US06870210B2
公开(公告)日：2005-03-22
申请号：US10225428
申请日：2002-08-22
申请人： Er-Xuan Ping , Shenlin Chen
发明人： Er-Xuan Ping , Shenlin Chen
IPC分类号： H01G4/005 , H01L21/02 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L27/10811 , H01L27/10817 , H01L27/1085 , H01L27/10885 , H01L28/84 , H01L28/91
摘要： A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.
摘要翻译：公开了双面HSG电容器和制造方法。作为双面下电容器电极的一部分，在掺杂多晶层和半球状多晶硅层（HSG）之间形成薄的自然氧化物层。在电介质形成之前，下部电容器电极可以任选退火以改善电容。

6. 发明授权

US07071056B2 Method of forming a dual-sided capacitor 失效
标题翻译：形成双面电容器的方法
公开(公告)号：US07071056B2
公开(公告)日：2006-07-04
申请号：US10895130
申请日：2004-07-21
申请人： Er-Xuan Ping , Shenlin Chen
发明人： Er-Xuan Ping , Shenlin Chen
IPC分类号： H01L21/8242
CPC分类号： H01L27/10852 , H01L27/10811 , H01L27/10817 , H01L27/1085 , H01L27/10885 , H01L28/84 , H01L28/91
摘要： A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.
摘要翻译：公开了双面HSG电容器和制造方法。作为双面下电容器电极的一部分，在掺杂多晶层和半球状多晶硅层（HSG）之间形成薄的自然氧化物层。在电介质形成之前，下部电容器电极可以任选退火以改善电容。

7. 发明授权

US06949427B2 Methods of forming a capacitor structure 失效
标题翻译：形成电容器结构的方法
公开(公告)号：US06949427B2
公开(公告)日：2005-09-27
申请号：US10075193
申请日：2002-02-13
申请人： Shenlin Chen , Er-Xuan Ping
发明人： Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/08 , H01L27/108 , H01L29/94 , H01L31/119
CPC分类号： H01L28/84 , H01L27/0805 , H01L27/10852 , H01L27/10855 , H01L28/91 , Y10S438/964
摘要： The invention includes a method of forming a capacitor electrode. A sacrificial material sidewall is provided to extend at least partially around an opening. A first silicon-containing material is formed within the opening to partially fill the opening, and is doped with conductivity-enhancing dopant. A second silicon-containing material is formed within the partially filled opening, and is provided to be less heavily doped with conductivity-enhancing dopant than is the first silicon-containing material. At least some of the second silicon-containing material is converted into hemispherical grain silicon, and at least some of the sacrificial material sidewall is removed. The invention also encompasses methods of forming capacitors and capacitor assemblies incorporating the above-described capacitor electrode. Further, the invention encompasses capacitor assemblies and capacitor structures.
摘要翻译：本发明包括形成电容器电极的方法。提供牺牲材料侧壁以至少部分地围绕开口延伸。在开口内形成第一含硅材料以部分地填充开口，并且掺杂有导电性增强掺杂剂。第二含硅材料形成在部分填充的开口内，并且被提供为比第一含硅材料低掺杂导电性增强掺杂剂。第二含硅材料中的至少一些被转换为半球形晶粒硅，并且除去至少一些牺牲材料侧壁。本发明还包括形成具有上述电容器电极的电容器和电容器组件的方法。此外，本发明包括电容器组件和电容器结构。

8. 发明申请

US20050018381A1 Capacitor constructions and methods of forming 有权
公开(公告)号：US20050018381A1
公开(公告)日：2005-01-27
申请号：US10624340
申请日：2003-07-21
申请人： Brent McClure , Casey Kurth , Shenlin Chen , Debra Gould , Lyle Breiner , Er-Xuan Ping , Fred Fishburn , Hongmei Wang
发明人： Brent McClure , Casey Kurth , Shenlin Chen , Debra Gould , Lyle Breiner , Er-Xuan Ping , Fred Fishburn , Hongmei Wang
IPC分类号： H01L21/02 , H01L21/8242 , H01L27/08 , H02H9/02
CPC分类号： H01L28/84 , H01L27/0805 , H01L27/10867 , H01L27/10873 , H01L28/75 , H01L28/91
摘要： A capacitor construction includes a first electrode and a layer between the first electrode and a surface supporting the capacitor construction. The capacitor construction can exhibit a lower RC time constant compared to an otherwise identical capacitor construction lacking the layer. Alternatively, or additionally, the first electrode may contain Si and the layer may limit the Si from contributing to formation of metal silicide material between the first electrode and the supporting surface. The layer may be a nitride layer and may be conductive or insulative. When conductive, the layer may exhibit a first conductivity greater than a second conductivity of the first electrode. The capacitor construction may be used in memory devices.

9. 发明申请

US20050042824A1 Semiconductor structures, DRAM cells and electronic systems 失效
标题翻译：半导体结构，DRAM单元和电子系统
公开(公告)号：US20050042824A1
公开(公告)日：2005-02-24
申请号：US10945774
申请日：2004-09-20
申请人： Shenlin Chen , Trung Doan , Guy Blalock , Lyle Breiner , Er-Xuan Ping
发明人： Shenlin Chen , Trung Doan , Guy Blalock , Lyle Breiner , Er-Xuan Ping
IPC分类号： H01L21/02 , H01L21/20 , H01L21/8242 , H01L23/58
CPC分类号： H01L27/10852 , H01L27/10817 , H01L28/84 , Y10S438/964
摘要： The invention includes a method of forming a rugged semiconductor-containing surface. A first semiconductor layer is formed over a substrate, and a second semiconductor layer is formed over the first semiconductor layer. Subsequently, a third semiconductor layer is formed over the second semiconductor layer, and semiconductor-containing seeds are formed over the third semiconductor layer. The seeds are annealed to form the rugged semiconductor-containing surface. The first, second and third semiconductor layers are part of a common stack, and can be together utilized within a storage node of a capacitor construction. The invention also includes semiconductor structures comprising rugged surfaces. The rugged surfaces can be, for example, rugged silicon.
摘要翻译：本发明包括形成坚固的含半导体的表面的方法。在衬底上形成第一半导体层，并且在第一半导体层上形成第二半导体层。随后，在第二半导体层上形成第三半导体层，并且在第三半导体层上形成含半导体的种子。将种子退火以形成坚固的含半导体的表面。第一，第二和第三半导体层是公共堆叠的一部分，并且可以在电容器结构的存储节点内一起使用。本发明还包括包括粗糙表面的半导体结构。坚固的表面可以是例如坚固的硅。

10. 发明授权

US06858493B2 Method of forming a dual-sided capacitor 失效
标题翻译：形成双面电容器的方法
公开(公告)号：US06858493B2
公开(公告)日：2005-02-22
申请号：US10448115
申请日：2003-05-30
申请人： Er-Xuan Ping , Shenlin Chen
发明人： Er-Xuan Ping , Shenlin Chen
IPC分类号： H01G4/005 , H01L21/02 , H01L21/8242 , H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： H01L27/10852 , H01L27/10811 , H01L27/10817 , H01L27/1085 , H01L27/10885 , H01L28/84 , H01L28/91
摘要： A dual-sided HSG capacitor and a method of fabrication are disclosed. A thin native oxide layer is formed between a doped polycrystalline layer and a layer of hemispherical grained polysilicon (HSG) as part of a dual-sided lower capacitor electrode. Prior to the dielectric formation, the lower capacitor electrode may be optionally annealed to improve capacitance.
摘要翻译：公开了双面HSG电容器和制造方法。作为双面下电容器电极的一部分，在掺杂多晶层和半球状多晶硅层（HSG）之间形成薄的自然氧化物层。在电介质形成之前，下部电容器电极可以任选退火以改善电容。

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