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    • 3. 发明授权
    • Method for manufacturing silicon thin-film solar cells
    • 硅薄膜太阳能电池的制造方法
    • US08679892B2
    • 2014-03-25
    • US13343373
    • 2012-01-04
    • Tomi T. LiJeng-Yang ChangSheng-Hui ChenCheng-Chung Lee
    • Tomi T. LiJeng-Yang ChangSheng-Hui ChenCheng-Chung Lee
    • H01L21/00H01L31/0376H01L31/0384
    • H01L31/0376H01L31/03685H01L31/03762H01L31/03845H01L31/065H01L31/075H01L31/1804Y02E10/545Y02E10/547Y02E10/548Y02P70/521
    • The present invention relates to a method for manufacturing silicon thin-film solar cells, including: providing a substrate; forming a first electrode on the substrate; forming a first doped semiconductor layer on the first electrode by chemical vapor deposition; forming an intrinsic layer on the first doped semiconductor layer by chemical vapor deposition, where the intrinsic layer includes a plurality of amorphous/nanocrystalline silicon layers, and the intrinsic layer has various energy bandgaps formed by varying average grain sizes of the amorphous/nanocrystalline silicon layers; forming a second doped semiconductor layer on the intrinsic layer by chemical vapor deposition, where one of the first doped semiconductor layer and the second doped semiconductor layer is a p-type amorphous silicon layer and the other is an n-type amorphous/nano-microcrystalline silicon layer; and forming a second electrode on the second doped semiconductor layer. Accordingly, the present invention can achieve broadband absorption in a single junction structure.
    • 本发明涉及一种制造硅薄膜太阳能电池的方法,包括:提供基板; 在所述基板上形成第一电极; 通过化学气相沉积在所述第一电极上形成第一掺杂半导体层; 通过化学气相沉积在所述第一掺杂半导体层上形成本征层,其中所述本征层包括多个非晶/纳米晶硅层,并且所述本征层具有通过改变所述非晶/纳米晶硅层的平均晶粒尺寸而形成的各种能带隙 ; 通过化学气相沉积在本征层上形成第二掺杂半导体层,其中第一掺杂半导体层和第二掺杂半导体层中的一个是p型非晶硅层,另一个是n型非晶/纳米微晶 硅层; 以及在所述第二掺杂半导体层上形成第二电极。 因此,本发明可以实现单结结构中的宽带吸收。