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1. 发明专利

JP2010135259A Light-emitting element 有权
标题翻译：发光元件
公开(公告)号：JP2010135259A
公开(公告)日：2010-06-17
申请号：JP2008312204
申请日：2008-12-08
申请人： Sharp Corp , シャープ株式会社
发明人： HARADA MAOMI , ARAI NOBUTOSHI , OGURA TAKAYUKI , KOTAKI HIROSHI
IPC分类号： H05B33/14 , C09K11/00 , C09K11/66 , H05B33/02 , H05B33/28
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element to emit light with superior light-emitting efficiency without unevenness.
SOLUTION: The light-emitting element includes: a substrate having a p-type semiconductor part and an n-type semiconductor part having pn junction at least on the upper face; a translucent insulator layer which is installed on the substrate and has a light-emitting body inside; a translucent electrode installed on the insulator layer; a first electrode installed on a surface of the p-type semiconductor part and on a part where the insulator layer is not installed above; and a second electrode installed on a surface of the n-type semiconductor part and on a part where the insulator layer is not installed above. The insulator layer and the translucent electrode are installed in this order on a part where the p-type semiconductor part and the n-type semiconductor part of the upper face of the substrate has the pn junction.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种发光元件发光而具有优异的发光效率而没有不均匀性。解决方案：发光元件包括：至少在上表面上具有p型半导体部件和具有pn结的n型半导体部件的基板; 半透明绝缘体层，其安装在基板上并具有发光体; 安装在绝缘体层上的半透明电极; 安装在p型半导体部件的表面上的第一电极和绝缘体层未安装在其上的部分; 以及安装在n型半导体部件的表面上以及绝缘体层未安装在其上的部分的第二电极。绝缘体层和透光性电极依次安装在基板的上表面的p型半导体部分和n型半导体部分具有pn结的部分上。版权所有（C）2010，JPO＆INPIT

2. 发明专利

JP2004119615A Memory film texture, memory element and its manufacturing method, semiconductor integrated circuit and portable electronic equipment using the same 有权
公开(公告)号：JP2004119615A
公开(公告)日：2004-04-15
申请号：JP2002279557
申请日：2002-09-25
申请人： Sharp Corp , シャープ株式会社
发明人： ARAI NOBUTOSHI , IWATA HIROSHI , OGURA TAKAYUKI , SHIBATA AKIHIDE , ADACHI KOICHIRO , KAKIMOTO SEIZO
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a memory film structure operable with a low voltage and a memory element using it. SOLUTION: A silicon substrate 110 as a first electrode, a silicon oxide film 120, a multi-crystal silicon film 130, a silicon oxide film 140 containing conductive silicon particles, a multi-crystal silicon film 170, a silicon oxide film 180, and a multi-crystal silicon film 190 as the second electrode, are successively laminated. Also, the conductive silicon particles are constituted of first particles 150 in the proximity of the multi-crystal silicon film 130 and second particles 160 in the proximity of a multi-crystal silicon film 170. COPYRIGHT: (C)2004,JPO

3. 发明专利

JP2007109954A Semiconductor storage device, manufacturing method thereof and operating method thereof 审中-公开
标题翻译：半导体存储器件及其制造方法及其工作方法
公开(公告)号：JP2007109954A
公开(公告)日：2007-04-26
申请号：JP2005300437
申请日：2005-10-14
申请人： Sharp Corp , シャープ株式会社
发明人： KATAOKA KOTARO , OGURA TAKAYUKI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor storage device capable of executing storage of a plurality of bits in one cell with more reliability than a conventional device. SOLUTION: The device is provided with a charge holding film formed on a semiconductor layer and having a function of locally accumulating electric charges; a gate electrode formed on one part of the charge holding film; and a diffusion region formed on the semiconductor layers of both sides of the gate electrode. In the semiconductor device, the end of the gate electrode side of the diffusion region is positioned on the outside rather than an immediately below the gate electrode, and the charge holding film extends to at least a portion on an end of the gate electrode side of the diffusion region. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体存储装置，其能够以比常规装置更可靠的方式在一个单元中执行多个位的存储。解决方案：该器件设置有形成在半导体层上的电荷保持膜，具有局部积累电荷的功能; 形成在电荷保持膜的一部分上的栅电极; 以及形成在栅电极的两侧的半导体层上的扩散区域。在半导体装置中，扩散区域的栅电极侧的端部位于外侧而不是位于栅电极的正下方，电荷保持膜延伸至栅电极侧的至少一部分扩散区域。版权所有（C）2007，JPO＆INPIT

4. 发明专利

JP2004342881A Semiconductor memory, semiconductor device, ic card, portable electronic apparatus, and method for manufacturing semiconductor memory 审中-公开
标题翻译：半导体存储器，半导体器件，IC卡，便携式电子设备和制造半导体存储器的方法
公开(公告)号：JP2004342881A
公开(公告)日：2004-12-02
申请号：JP2003138540
申请日：2003-05-16
申请人： Sharp Corp , シャープ株式会社
发明人： OGURA TAKAYUKI , IWATA HIROSHI , SHIBATA AKIHIDE
IPC分类号： G11C16/04 , H01L21/8247 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable semiconductor memory in which operating speed can be enhanced by bringing a contact and a gate electrode close to each other through a simple arrangement thereby realizing scaling-down, and to provide a semiconductor memory, a semiconductor device, an IC card and a portable electronic apparatus employing it, and a process for fabricating a semiconductor memory. SOLUTION: Coating films 21 and 26 each consisting of an insulator having a function for storing charges are formed to cover the upper surface and the side face of the gate electrode 3 formed on a semiconductor substrate 1 through a gate insulating film 2. A contact 25 formed on the side of the gate electrode 3 through the coating films 21 and 26 is connected electrically with source/drain diffusion regions 13a and 13b. The coating films 21 and 26 are composed of such a material as having a selection ratio to an interlayer insulating film 23 functioning as an etching stop material at the time of etching the interlayer insulating film 23 formed above the coating films 21 and 26 at least on the gate electrode 3. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：提供一种高度可靠的半导体存储器，其中可以通过简单的布置使接触和栅极彼此靠近来实现缩小，并且提供半导体存储器来提高工作速度，半导体器件，IC卡和使用它的便携式电子设备，以及半导体存储器的制造工艺。解决方案：通过栅极绝缘膜2形成由具有用于存储电荷的功能的绝缘体组成的涂膜21和26覆盖形成在半导体衬底1上的栅电极3的上表面和侧面。通过涂膜21和26形成在栅电极3侧的触点25与源/漏扩散区13a和13b电连接。涂膜21和26由在形成在涂膜21和26上方的层间绝缘膜23刻蚀时起到防腐蚀材料作用的层间绝缘膜23的选择比例的材料构成，至少在栅极电极3.版权所有（C）2005，JPO＆NCIPI

5. 发明专利

JP2010135260A Light emitting element, and method for manufacturing the same 审中-公开
标题翻译：发光元件及其制造方法
公开(公告)号：JP2010135260A
公开(公告)日：2010-06-17
申请号：JP2008312210
申请日：2008-12-08
申请人： Sharp Corp , シャープ株式会社
发明人： ARAI NOBUTOSHI , HARADA MAOMI , OGURA TAKAYUKI , KOTAKI HIROSHI
IPC分类号： H05B33/26 , H05B33/10 , H05B33/14 , H05B33/22
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting element to emit light without unevenness.
SOLUTION: The light-emitting element is equipped with a first electrode, a translucent second electrode, and a translucent carrier part which is installed between the first electrode and the second electrode, and has a light-emitting body inside, and the first electrode has a plurality of convex parts on a surface contacting with the carrier part, and the length between the upper end of the convex part and the second electrode is shorter than that between a part, other than the convex part of the first electrode and the second electrode.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供发光元件发光而不发生不均匀性。解决方案：发光元件配备有第一电极，半透明第二电极和安装在第一电极和第二电极之间的半透明载体部分，并且在其内部具有发光体，并且第一电极在与载体部分接触的表面上具有多个凸部，并且凸部和上述第二电极的上端之间的长度比除了第一电极的凸部以外的部分的长度短第二电极。版权所有（C）2010，JPO＆INPIT

6. 发明专利

JP2009198467A Sensor element using nano structure, analytical chip, analytical apparatus, and method for manufacturing sensor element 审中-公开
标题翻译：传感器元件使用纳米结构，分析芯片，分析仪器和制造传感器元件的方法
公开(公告)号：JP2009198467A
公开(公告)日：2009-09-03
申请号：JP2008043606
申请日：2008-02-25
申请人： Sharp Corp , シャープ株式会社
发明人： CHO SHOCHIN , OGURA TAKAYUKI
IPC分类号： G01N27/00 , B82B1/00 , B82B3/00
摘要： PROBLEM TO BE SOLVED: To provide a sensor chip having a nano structure exposed in a flow channel, which can be formed simply with a high reliability.
SOLUTION: A silicon nano wire 3 is exposed, at least a part thereof, in a groove part 5 and is configured as one unit with a substrate 2. Also. a source semiconductor region formed on the substrate forms a part of the one side of the sidewall of the groove part 5 and a drain semiconductor region forms a part of the other side of the sidewall of the groove part 5.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种在流路中暴露的纳米结构的传感器芯片，其可以简单地以高可靠性形成。解决方案：硅纳米线3的至少一部分暴露在槽部5中，并且被构造为具有基板2的一个单元。形成在基板上的源极半导体区域形成沟部5的侧壁的一侧的一部分，漏极半导体区域形成槽部5的侧壁的另一侧的一部分。 C）2009年，JPO＆INPIT

7. 发明专利

JP2004343014A Semiconductor memory, semiconductor device, and their manufacturing method, portable electronic apparatus, and ic card 审中-公开
公开(公告)号：JP2004343014A
公开(公告)日：2004-12-02
申请号：JP2003141031
申请日：2003-05-19
申请人： Sharp Corp , シャープ株式会社
发明人： OGURA TAKAYUKI , IWATA HIROSHI , SHIBATA AKIHIDE
IPC分类号： H01L21/8234 , H01L21/28 , H01L21/8246 , H01L21/8247 , H01L27/088 , H01L27/10 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/11585 , H01L21/28273 , H01L21/28282 , H01L21/28291 , H01L27/115 , H01L27/11521 , H01L27/11568 , H01L27/1159 , H01L29/7923
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor memory in which reliability can be enhanced by solving the problems of overerasure and resulting failure of read out. SOLUTION: A field effect transistor comprises a gate insulating film 2 formed on a semiconductor substrate 1, a gate electrode 3, and a pair of source/drain diffusion regions 13 and 13. Recesses 50 and 50 having an enlarging cross-section are formed sideward between the opposite side parts of the gate electrode 3 and the surface of the semiconductor substrate. Memory function bodies 11 and 11 each consisting of a charge holding part 31 composed of a material having a charge storing function and a scattering preventive insulator 32 having a function for preventing scattering of stored charges are formed on the opposite sides of the gate electrode 3 in the mode for filling the recesses 50 and 50. COPYRIGHT: (C)2005,JPO&NCIPI

8. 发明专利

JP2013222630A Secondary battery and method for manufacturing the same 审中-公开
标题翻译：二次电池及其制造方法
公开(公告)号：JP2013222630A
公开(公告)日：2013-10-28
申请号：JP2012094249
申请日：2012-04-17
申请人： Sharp Corp , シャープ株式会社
发明人： OE AKIRA , TSUKUDA YOSHIHIRO , SAKASHITA KAZUYA , OGURA TAKAYUKI
IPC分类号： H01M2/18 , H01M2/02 , H01M2/20 , H01M10/04
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To prevent damage of a secondary battery due to deflection of a battery can.SOLUTION: A spacer 6 for securing a space capable of storing an electrode group 3 is provided inside an exterior case 21 of a secondary battery 1.
摘要翻译：要解决的问题：为了防止二次电池由于电池罐的偏转而的损坏。解决方案：在二次电池1的外壳21的内部设置有用于固定能够存储电极组3的空间的间隔件6。

9. 发明专利

JP2013191688A Photovoltaic power generation module, and mobile body 审中-公开
标题翻译：光伏发电模块和移动体
公开(公告)号：JP2013191688A
公开(公告)日：2013-09-26
申请号：JP2012056179
申请日：2012-03-13
申请人： Sharp Corp , シャープ株式会社
发明人： YAOI YOSHIFUMI , NOMURA MASARU , KOMIYA KENJI , ADACHI KOICHIRO , OTA YOSHIJI , IWATA HIROSHI , OGURA TAKAYUKI
IPC分类号： H01L31/04 , B60L8/00
CPC分类号： Y02E10/50 , Y02T10/7083
摘要： PROBLEM TO BE SOLVED: To provide a photovoltaic power generation module capable of securing safety, such as electrical shock prevention by preventing an unnecessary output, and a mobile body mounted with such the photovoltaic power generation module.SOLUTION: A photovoltaic power generation module 1 includes photovoltaic power generation parts 10 for converting light into electricity, connection parts 11 connected to the photovoltaic power generation parts 10, and opening/closing parts 13 for opening/closing the connection parts 11. In the photovoltaic power generation module 1, the photovoltaic power generation parts 10 are arranged in the shape of a matrix, and the opening/closing parts 13 are similarly arranged in the shape of a matrix. Then, the opening/closing parts 13 include serial opening/closing parts 13s and parallel opening/closing parts 13p, and control lines 14 include serial control lines 14s and parallel control lines 14p. Actually, the serial control lines 14s and the parallel control lines 14p are united into single bodies to be connected in common as the control lines 14. That is, the serial opening/closing parts 13s and the parallel opening/closing parts 13p are simultaneously controlled to be opened/closed by control signals CS inputted through the control lines 14.
摘要翻译：要解决的问题：提供一种能够通过防止不必要的输出来确保诸如防止电击的安全性的光伏发电模块以及安装有这种光伏发电模块的移动体。解决方案：光伏发电模块1包括用于将光转换成电的光伏发电部10，与太阳能发电部10连接的连接部11以及用于打开/关闭连接部11的开闭部13.在太阳光发电模块1中，部件10以矩阵的形式布置，并且打开/关闭部分13类似地布置成矩阵的形状。然后，打开/关闭部13包括串行打开/关闭部分13s和平行打开/关闭部分13p，控制线14包括串行控制线14s和平行控制线14p。实际上，串行控制线14s和并联控制线14p被组合为单个主体以作为控制线14共同连接。即，同时控制串行打开/关闭部分13s和平行打开/关闭部分13p 由通过控制线14输入的控制信号CS打开/关闭。

10. 发明专利

JP2013008557A Battery pack 审中-公开
标题翻译：电池组
公开(公告)号：JP2013008557A
公开(公告)日：2013-01-10
申请号：JP2011140490
申请日：2011-06-24
申请人： Sharp Corp , シャープ株式会社
发明人： EZAKI SHOGO , TORATA NAOTO , OGURA TAKAYUKI
IPC分类号： H01M2/10
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide a battery pack capable of preventing decrease of performance and service life thereof.SOLUTION: A battery pack 20 has plural battery blocks 1a-1c electrically connect to each other in series; and each battery block includes plural single cells 10 electrically connected to each other in parallel. All single cells 10 are disposed in parallel to each other. When the single cells 10 of the battery pack 20 are sorted from the one located closest to the disposition center of the single cells in the battery pack 20, a battery block 1a, which includes a single cell 10 located closer to the disposition center than a middle single cell 10c located at the intermediate position, includes a single cell 10 which is located farther from the dispose center than the middle single cell 10c.
摘要翻译：要解决的问题：提供能够防止其性能和使用寿命降低的电池组。解决方案：电池组20具有串联电连接的多个电池块1a-1c; 并且每个电池块包括并联电连接的多个单电池10。所有单电池10彼此平行设置。当电池组20的单电池10从位于电池组20中的单电池最靠近配置中心的电池单元10分类时，电池块1a包括位于配置中心附近的单电池10，位于中间位置的中间单电池10c包括位于比中间单电池10c更远离配置中心的单电池10。版权所有（C）2013，JPO＆INPIT

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