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1. 发明授权

US5885744A Photoresist composition 失效
标题翻译：光刻胶组成
公开(公告)号：US5885744A
公开(公告)日：1999-03-23
申请号：US892442
申请日：1997-07-14
申请人： Seung-joon Yoo , Ik-chul Lim , Chang-wook Kim , Ki-wook Kang
发明人： Seung-joon Yoo , Ik-chul Lim , Chang-wook Kim , Ki-wook Kang
IPC分类号： C08F2/50 , G03F7/008 , G03F7/016 , G03F7/038 , H01J9/227 , H01L21/027 , G03F7/012 , G03C5/00
CPC分类号： G03F7/008
摘要： A photoresist composition containing a photo-curing polymer and a photosensitive agent, wherein the photosensitive agent comprises at least two compounds selected from the group consisting of 4,4'-diazido-2,2'-stilbenedisulfonate sodium salt, 4,4'-diazo-2,2'-dibenzalacetone disulfonate disodium salt, 2,5-bis(4-azido-2-sulfobenzylidene) cyclopentanone disodium salt and 4,4'-diazido-2,2'-dicinnamylideneacetone sulfonate salt. By performing a lithography process using the photoresist composition, the exposure time can be shortened, thereby improving the yield of products.
摘要翻译：一种含光固化聚合物和感光剂的光致抗蚀剂组合物，其中感光剂包含至少两种选自4,4'-二叠氮基-2,2'-芪二磺酸钠盐，4,4'- 重氮基-2,2'-二苄基丙酮二磺酸二钠盐，2,5-双（4-叠氮基-2-磺基亚苄基）环戊酮二钠盐和4,4'-二叠氮基-2,2'-二亚铁基丙酮磺酸盐盐。通过使用光致抗蚀剂组合物进行光刻工艺，可以缩短曝光时间，从而提高产品的收率。

2. 发明申请

US20110097864A1 Method of Fabricating High-Voltage Semiconductor Device 有权
标题翻译：制造高压半导体器件的方法
公开(公告)号：US20110097864A1
公开(公告)日：2011-04-28
申请号：US12985093
申请日：2011-01-05
申请人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type.
摘要翻译：一种制造高电压半导体器件的方法包括以下步骤：提供半导体层; 在所述半导体层中形成多个沟槽以在相邻沟槽之间的所述半导体层中限定出第一导电类型的多个柱，其中所述沟槽从所述半导体层的顶表面朝向所述半导体层的底表面延伸; 在每个沟槽的至少侧壁上形成第二导电类型的电荷补偿层至预定厚度，从而在每个沟槽中形成凹槽; 并且用第一导电类型的电荷补偿塞基本上填充每个凹槽。

3. 发明申请

US20080111207A1 High-Voltage Semiconductor Device and Method of Fabricating the Same 有权
标题翻译：高压半导体器件及其制造方法
公开(公告)号：US20080111207A1
公开(公告)日：2008-05-15
申请号：US11939264
申请日：2007-11-13
申请人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L23/00 , H01L21/44
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L2924/0002 , H01L2924/00
摘要： A high-voltage semiconductor device includes a semiconductor layer having a plurality of pillars of a first conductivity type defined by a plurality of trenches which extend from a top surface of the semiconductor layer toward a bottom surface thereof. A charge compensation layer of a second conductivity type is disposed over at least sidewalls of each trench to a predetermined thickness to form a groove in each trench. A charge compensation plug of the first conductivity type substantially fills each groove.
摘要翻译：高压半导体器件包括具有多个由多个沟槽限定的第一导电类型的柱的半导体层，该多个沟槽从半导体层的顶表面向其底表面延伸。第二导电类型的电荷补偿层设置在每个沟槽的至少侧壁上至预定厚度，以在每个沟槽中形成凹槽。第一导电类型的电荷补偿插头基本上填充每个沟槽。

4. 发明授权

US08716085B2 Method of fabricating high-voltage semiconductor device 有权
标题翻译：制造高压半导体器件的方法
公开(公告)号：US08716085B2
公开(公告)日：2014-05-06
申请号：US12985093
申请日：2011-01-05
申请人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L2924/0002 , H01L2924/00
摘要： A method of fabricating a high-voltage semiconductor device includes the following steps: providing a semiconductor layer; forming a plurality of trenches in the semiconductor layer to define a plurality of pillars of a first conductivity type in the semiconductor layer between adjacent trenches, wherein the trenches extend from a top surface of the semiconductor layer toward a bottom surface of the semiconductor layer; forming a charge compensation layer of a second conductivity type over at least sidewalls of each trench to a predetermined thickness thereby forming a groove in each trench; and substantially filling each groove with a charge compensation plug of the first conductivity type.
摘要翻译：一种制造高电压半导体器件的方法包括以下步骤：提供半导体层; 在所述半导体层中形成多个沟槽以在相邻沟槽之间的所述半导体层中限定出第一导电类型的多个柱，其中所述沟槽从所述半导体层的顶表面朝向所述半导体层的底表面延伸; 在每个沟槽的至少侧壁上形成第二导电类型的电荷补偿层至预定厚度，从而在每个沟槽中形成凹槽; 并且用第一导电类型的电荷补偿塞基本上填充每个凹槽。

5. 发明授权

US07868384B2 High-voltage semiconductor device and method of fabricating the same 有权
标题翻译：高压半导体器件及其制造方法
公开(公告)号：US07868384B2
公开(公告)日：2011-01-11
申请号：US11939264
申请日：2007-11-13
申请人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
发明人： Jae-gil Lee , Chang-wook Kim , Ho-cheol Jang , Chong-man Yun
IPC分类号： H01L29/66
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0878 , H01L29/1095 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L2924/0002 , H01L2924/00
摘要： A high-voltage semiconductor device includes a semiconductor layer having a plurality of pillars of a first conductivity type defined by a plurality of trenches which extend from a top surface of the semiconductor layer toward a bottom surface thereof. A charge compensation layer of a second conductivity type is disposed over at least sidewalls of each trench to a predetermined thickness to form a groove in each trench. A charge compensation plug of the first conductivity type substantially fills each groove.
摘要翻译：高压半导体器件包括具有多个由多个沟槽限定的第一导电类型的柱的半导体层，该多个沟槽从半导体层的顶表面向其底表面延伸。第二导电类型的电荷补偿层设置在每个沟槽的至少侧壁上至预定厚度，以在每个沟槽中形成凹槽。第一导电类型的电荷补偿插头基本上填充每个沟槽。

6. 发明授权

US06660570B2 Method of fabricating a high voltage semiconductor device using SIPOS 失效
标题翻译：使用SIPOS制造高压半导体器件的方法
公开(公告)号：US06660570B2
公开(公告)日：2003-12-09
申请号：US10140181
申请日：2002-05-08
申请人： Jin-kyeong Kim , Jong-min Kim , Kyung-wook Kim , Tae-hoon Kim , Cheol Choi , Chang-wook Kim
发明人： Jin-kyeong Kim , Jong-min Kim , Kyung-wook Kim , Tae-hoon Kim , Cheol Choi , Chang-wook Kim
IPC分类号： H01L21332
CPC分类号： H01L29/405 , H01L29/66272 , H01L29/73 , H01L29/7322
摘要： A high voltage semiconductor device including a semiconductor substrate on which a semi-insulating polycrystalline silicon layer is formed to alleviate electric field concentration in a field region, is disclosed. A thermal oxide layer is formed on the semi-insulating polycrystalline silicon layer to serve as a protective layer. The thermal oxide layer forms a good interface with the semi-insulating polycrystalline silicon layer compared to a wet etched oxide layer or a chemical vapor deposition (CVD) oxide layer, thereby decreasing the amount of leakage current. In addition, compared to a dual semi-insulating polycrystalline silicon layer, the thermal oxide layer exhibits a high surface protection effect and a high resistance against dielectric breakdown. It also allows a great reduction in fabrication time. In particular, the semi-insulating polycrystalline silicon layer is removed from the active region, thereby preventing the direct current (DC) gain of a device from being lowered within a low collector current range caused by the semi-insulating polycrystalline silicon layer.
摘要翻译：公开了一种包括半导体衬底的高电压半导体器件，半导体衬底上形成有半绝缘多晶硅层以减轻场区域中的电场集中。在半绝缘多晶硅层上形成热氧化层作为保护层。与湿蚀刻氧化物层或化学气相沉积（CVD）氧化物层相比，热氧化物层与半绝缘多晶硅层形成良好的界面，从而减少漏电流量。另外，与双半绝缘多晶硅层相比，热氧化层具有高的表面保护效果和高耐电介质击穿电阻。它还可以大大减少制造时间。特别地，从有源区域去除半绝缘多晶硅层，从而防止器件的直流（DC）增益在由半绝缘多晶硅层引起的集电极电流范围内降低。

7. 发明授权

US6160062A Polymer for photosensitive resin composition and method for making the same 失效
标题翻译：感光性树脂组合物用聚合物及其制造方法
公开(公告)号：US6160062A
公开(公告)日：2000-12-12
申请号：US231314
申请日：1999-01-13
申请人： Chang-wook Kim , Eak-Cheol Eam , Seung-Jun You , Eun-Ha Hu , Gi-Wook Kang
发明人： Chang-wook Kim , Eak-Cheol Eam , Seung-Jun You , Eun-Ha Hu , Gi-Wook Kang
IPC分类号： G03F7/075 , C08F2/38 , C08F220/56 , G08F226/02
CPC分类号： C08F220/56 , C08F2/38
摘要： A PDMA polymer for a photosensitive resin composition. The PDMA polymer is obtained by polymerizing an acrylamide, N,N-dimetylacrylamide monomer, and a vinyl-type silane. The PDMA polymer having a molecular weight of 1,000,000.about.2,000,000 and having a formula as follows: ##STR1##
摘要翻译：用于感光性树脂组合物的PDMA聚合物。通过聚合丙烯酰胺，N，N-二甲基丙烯酰胺单体和乙烯基型硅烷获得PDMA聚合物。分子量为1,000,000 DIFFERENCE 2,000,000的PDMA聚合物，具有如下公式：

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