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1. 发明授权

US08642155B2 Information storage medium using nanocrystal particles, method of manufacturing the information storage apparatus including the information storage medium 有权
标题翻译：使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
公开(公告)号：US08642155B2
公开(公告)日：2014-02-04
申请号：US13533717
申请日：2012-06-26
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoond Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： G11B7/24
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

2. 发明授权

US08206803B2 Information storage medium using nanocrystal particles, method of manufacturing the information storage medium, and information storage apparatus including the information storage medium 有权
标题翻译：使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置
公开(公告)号：US08206803B2
公开(公告)日：2012-06-26
申请号：US11854124
申请日：2007-09-12
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： B32B3/02
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

3. 发明申请

US20080205252A1 FERROELECTRIC INFORMATION STORAGE MEDIUM AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：电磁信息存储介质及其制造方法
公开(公告)号：US20080205252A1
公开(公告)日：2008-08-28
申请号：US11872059
申请日：2007-10-15
申请人： Simon Buehlmann , Eun-joo Jang , Shin-ae Jun , Seung-bum Hong , Yong-kwan Kim
发明人： Simon Buehlmann , Eun-joo Jang , Shin-ae Jun , Seung-bum Hong , Yong-kwan Kim
IPC分类号： G11B9/02
CPC分类号： G11B9/02
摘要： A ferroelectric information storage medium having ferroelectric nanodots and a method of manufacturing the ferroelectric information storage medium are provided. The ferroelectric information storage medium includes a substrate, an electrode formed on the substrate, and ferroelectric nanodots formed on the electrode, wherein the ferroelectric nanodots are separated from each other, and a plurality of the ferroelectric nanodots form a single bit region.
摘要翻译：提供具有铁电纳米点的铁电信息存储介质和制造铁电信息存储介质的方法。铁电信息存储介质包括基板，形成在基板上的电极和形成在电极上的铁电纳米点，其中铁电纳米点彼此分离，并且多个铁电纳米点形成单个位区域。

4. 发明申请

US20120267703A1 Information Storage Medium Using Nanocrystal Particles, Method of Manufacturing the Information Storage Apparatus Including the Information Storage Medium 有权
标题翻译：使用纳米晶粒子的信息存储介质，包括信息存储介质的信息存储设备的制造方法
公开(公告)号：US20120267703A1
公开(公告)日：2012-10-25
申请号：US13533717
申请日：2012-06-26
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： H01L29/792 , H01L21/28 , B82Y10/00 , B82Y40/00
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

5. 发明申请

US20080186837A1 INFORMATION STORAGE MEDIUM USING NANOCRYSTAL PARTICLES, METHOD OF MANUFACTURING THE INFORMATION STORAGE MEDIUM, AND INFORMATION STORAGE APPARATUS INCLUDING THE INFORMATION STORAGE MEDIUM 有权
标题翻译：使用纳米颗粒的信息存储介质，信息存储介质的制造方法和包括信息存储介质的信息存储设备
公开(公告)号：US20080186837A1
公开(公告)日：2008-08-07
申请号：US11854124
申请日：2007-09-12
申请人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
发明人： Seung-bum Hong , Simon Buehlmann , Shin-ae Jun , Sung-hoon Choa , Eun-joo Jang , Yong-kwan Kim
IPC分类号： G11B3/70 , G11B5/84
CPC分类号： G11B5/7325 , B82Y10/00 , G11B5/743 , G11B9/02 , G11B9/08 , G11B9/1472
摘要： Provided is an information storage medium using nanocrystal particles, a method of manufacturing the information storage medium, and an information storage apparatus including the information storage medium. The information storage medium includes a conductive layer, a first insulating layer formed on the conductive layer, a nanocrystal layer that is formed on the first insulating layer and includes conductive nanocrystal particles that can trap charges, and a second insulating layer formed on the nanocrystal layer.
摘要翻译：提供了使用纳米晶粒的信息存储介质，信息存储介质的制造方法以及包括信息存储介质的信息存储装置。所述信息存储介质包括导电层，形成在所述导电层上的第一绝缘层，形成在所述第一绝缘层上并包含可以捕获电荷的导电纳米晶体颗粒的纳米晶体层，以及形成在所述纳米晶体层上的第二绝缘层。

6. 发明申请

US20100096369A1 Multi-axis laser welding head for spacer grid 审中-公开
标题翻译：多轴激光焊接头用于间隔网格
公开(公告)号：US20100096369A1
公开(公告)日：2010-04-22
申请号：US11971012
申请日：2008-01-08
申请人： Byeong-Eun Oh , Hak-beum Park , Yong-kwan Kim , Myoung-ho Oh , Hung-soon Chang , Sang-hyun Lim
发明人： Byeong-Eun Oh , Hak-beum Park , Yong-kwan Kim , Myoung-ho Oh , Hung-soon Chang , Sang-hyun Lim
IPC分类号： B23K26/00
CPC分类号： G21C3/334 , B23K26/0823 , B23K26/0884 , G21C3/3424 , G21C21/02 , Y02E30/40
摘要： Disclosed therein is a multi-axis laser welding head for a spacer grid, which is one of essential components of a nuclear fuel assembly. More particularly, the multi-axis laser welding head for the spacer grid can be operated more smoothly and variously during the welding of the spacer grid to thereby weld the spacer grid more exactly and precisely. For this, the multi-axis laser welding head includes a welding head having a movement within a predetermined angle like the back and forth swing of the pendulum, and can irradiate a laser beam in various directions by having additional axis in comparison with the prior art.
摘要翻译：其中公开了一种用于间隔栅格的多轴激光焊接头，其是核燃料组件的基本部件之一。更具体地，用于间隔栅格的多轴激光焊接头可以在间隔栅格的焊接期间更平稳地和不同地操作，从而更精确和精确地焊接间隔栅格。为此，多轴激光焊接头包括焊接头，其具有与摆锤的前后摆动相同的预定角度的运动，并且可以通过与现有技术相比具有附加轴线而在各个方向上照射激光束。

7. 发明授权

US08183497B2 Apparatus for and method of welding spacer grid 有权
标题翻译：焊接间隔栅格的装置和方法
公开(公告)号：US08183497B2
公开(公告)日：2012-05-22
申请号：US11970852
申请日：2008-01-08
申请人： Hak-beum Park , Byeong-Eun Oh , Myoung-ho Oh , Yong-kwan Kim , Hung-soon Chang , Chang-hwan Hwang , Sang-hyun Lim
发明人： Hak-beum Park , Byeong-Eun Oh , Myoung-ho Oh , Yong-kwan Kim , Hung-soon Chang , Chang-hwan Hwang , Sang-hyun Lim
IPC分类号： B23K26/00
CPC分类号： B23K26/22 , B23K26/032 , B23K26/04 , B23K26/0622 , B23K26/064 , B23K26/0643 , B23K26/0648 , B23K26/0665 , B23K26/0876 , B23K31/125 , B23K2101/22 , B23K2103/08 , G21C3/3424
摘要： The present invention relates to an apparatus and method for capturing an image of a welding spot during a welding task and determining an accurate position of the welding spot based on the captured image in order to perform an accurate welding task. A beam splitter splits a path of light reflected from a welding section of a spacer grid from a path of a laser beam generated from a laser generator. An image sensor receives light reflected from a welding spot of the spacer grid, and senses and stores an image of the spacer grid. Welding control means controls the image sensor to capture the image of the spacer grid, receives the image of the spacer grind from the image sensor, calculates an accurate position of the welding spot based on the received image, corrects position information of the welding spot based on the calculated position, and controls a servo motor so that the laser generator can accurately collimate the welding spot based on the corrected position value.
摘要翻译：本发明涉及一种用于在焊接任务期间捕获焊接点的图像的装置和方法，并且基于所捕获的图像确定焊点的准确位置，以执行准确的焊接任务。光束分离器从激光发生器产生的激光束的路径分离从间隔栅格的焊接部分反射的光的路径。图像传感器接收从间隔栅格的焊接点反射的光，并感测并存储间隔栅格的图像。焊接控制装置控制图像传感器捕获间隔网格的图像，从图像传感器接收间隔物研磨的图像，基于接收的图像计算焊接点的准确位置，基于焊接点的位置信息进行校正并且控制伺服电动机，使得激光发生器可以基于校正的位置值来准确地准直焊接点。

8. 发明授权

US08901526B2 Variable resistive memory device 有权
标题翻译：可变电阻式存储器件
公开(公告)号：US08901526B2
公开(公告)日：2014-12-02
申请号：US13753712
申请日：2013-01-30
申请人： Ki-hyung Nam , Yong-kwan Kim , Ho-joong Lee , Pulunsol Cho
发明人： Ki-hyung Nam , Yong-kwan Kim , Ho-joong Lee , Pulunsol Cho
IPC分类号： H01L29/00 , H01L45/00 , H01L27/22
CPC分类号： H01L45/1253 , H01L27/228
摘要： A variable resistive memory device capable of reducing contact resistance by including a contact layer having low contact resistance, the variable resistive memory device including a substrate comprising an active region; a gate line on the substrate; a first contact layer electrically connected to the active region; a memory cell contact plug electrically connected to the first contact layer; and a variable resistive memory cell electrically connected to the memory cell contact plug, wherein the first contact layer has less contact resistance with respect to the active region than the memory cell contact plug.
摘要翻译：一种可变电阻存储器件，其能够通过包括具有低接触电阻的接触层来降低接触电阻，所述可变电阻式存储器件包括包括有源区的衬底; 衬底上的栅极线; 电连接到有源区的第一接触层; 电连接到所述第一接触层的存储单元接触插塞; 以及电连接到所述存储单元接触插塞的可变电阻存储单元，其中所述第一接触层相对于所述有源区具有比所述存储单元接触插塞更小的接触电阻。

9. 发明授权

US09087769B2 Magnetic memory device 有权
标题翻译：磁存储器件
公开(公告)号：US09087769B2
公开(公告)日：2015-07-21
申请号：US14338285
申请日：2014-07-22
申请人： Yong-kwan Kim , Dae-eun Jeong , Shin-hee Han
发明人： Yong-kwan Kim , Dae-eun Jeong , Shin-hee Han
IPC分类号： H01L27/22 , H01L43/08 , H01L43/02
CPC分类号： H01L27/228 , G11C11/161 , G11C11/1657 , G11C11/1659 , H01L43/02 , H01L43/08
摘要： A magnetic memory device is provided. The magnetic memory device may include a plurality of word lines extending along a direction crossing a plurality of active regions and at least one source line connected to a plurality of first active regions arranged on a level that is lower than the upper surface of a substrate. A plurality of contact pads may be connected to a plurality of second active regions and a plurality of buried contact plugs may be connected to the plurality of second active regions via the plurality of contact pads. Said buried contact pads may further be arranged in a hexagonal array structure. A plurality of variable resistance structures may be connected to the plurality of second active regions and arranged in a hexagonal array structure.
摘要翻译：提供磁存储器件。磁存储器件可以包括沿着与多个有源区域交叉的方向延伸的多个字线和连接到布置在低于衬底的上表面的电平上的多个第一有源区域的至少一个源极线。多个接触焊盘可以连接到多个第二有源区，并且多个埋入式接触插塞可以经由多个接触焊盘连接到多个第二有源区。所述掩埋接触垫还可以布置成六边形阵列结构。多个可变电阻结构可以连接到多个第二有源区并且被布置成六边形阵列结构。

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