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1. 发明授权

US08071396B2 Embedded phase-change memory and method of fabricating the same 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US08071396B2
公开(公告)日：2011-12-06
申请号：US12942255
申请日：2010-11-09
申请人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L21/00
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

2. 发明授权

US07855421B2 Embedded phase-change memory and method of fabricating the same 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US07855421B2
公开(公告)日：2010-12-21
申请号：US11633216
申请日：2006-12-04
申请人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Sangouk Ryu , Sung Min Yoon , Young Sam Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L29/66
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

3. 发明授权

US08872146B2 Phase-change random access memory device and method of manufacturing the same 有权
标题翻译：相变随机存取存储器件及其制造方法
公开(公告)号：US08872146B2
公开(公告)日：2014-10-28
申请号：US12821414
申请日：2010-06-23
申请人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
摘要翻译：提供了一种相变随机存取存储器（PRAM）装置及其制造方法。特别地，包括加热层的PRAM装置及其制造方法，其中加热层包括彼此具有不同物理性质的第一和第二加热层。由于根据本发明的PRAM器件包括具有最佳加热特性的加热层，所以可以制造具有高可靠性和优异的工作特性的PRAM器件。

4. 发明申请

US20100258780A1 PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：相变随机访问存储器件及其制造方法
公开(公告)号：US20100258780A1
公开(公告)日：2010-10-14
申请号：US12821414
申请日：2010-06-23
申请人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
摘要翻译：提供了一种相变随机存取存储器（PRAM）装置及其制造方法。特别地，包括加热层的PRAM装置及其制造方法，其中加热层包括彼此具有不同物理性质的第一和第二加热层。由于根据本发明的PRAM器件包括具有最佳加热特性的加热层，所以可以制造具有高可靠性和优异的工作特性的PRAM器件。

5. 发明授权

US07767994B2 Phase-change random access memory device and method of manufacturing the same 有权
标题翻译：相变随机存取存储器件及其制造方法
公开(公告)号：US07767994B2
公开(公告)日：2010-08-03
申请号：US11951148
申请日：2007-12-05
申请人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
摘要翻译：提供了一种相变随机存取存储器（PRAM）装置及其制造方法。特别地，包括加热层的PRAM装置及其制造方法，其中加热层包括彼此具有不同物理性质的第一和第二加热层。由于根据本发明的PRAM器件包括具有最佳加热特性的加热层，所以可以制造具有高可靠性和优异的工作特性的PRAM器件。

6. 发明申请

US20080128676A1 PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：相变随机访问存储器件及其制造方法
公开(公告)号：US20080128676A1
公开(公告)日：2008-06-05
申请号：US11951148
申请日：2007-12-05
申请人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Young Sam Park , Sung Min Yoon , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： H01L45/00
CPC分类号： H01L45/06 , H01L45/1233 , H01L45/126 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
摘要翻译：提供了一种相变随机存取存储器（PRAM）装置及其制造方法。特别地，包括加热层的PRAM装置及其制造方法，其中加热层包括彼此具有不同物理性质的第一和第二加热层。由于根据本发明的PRAM器件包括具有最佳加热特性的加热层，所以可以制造具有高可靠性和优异的工作特性的PRAM器件。

7. 发明申请

US20070173010A1 Embedded phase-change memory and method of fabricating the same 有权
标题翻译：嵌入式相变存储器及其制造方法
公开(公告)号：US20070173010A1
公开(公告)日：2007-07-26
申请号：US11633216
申请日：2006-12-04
申请人： Seung-Yun Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
发明人： Seung-Yun Lee , Sangouk Ryu , Sung Yoon , Young Park , Kyu-Jeong Choi , Nam-Yeal Lee , Byoung-Gon Yu
IPC分类号： G11C19/08 , H01L21/8249 , H01L31/00 , H01L31/117
CPC分类号： H01L27/0635 , G11C13/0004 , G11C13/0069 , G11C2013/008 , G11C2213/79 , H01L21/8249 , H01L27/2445 , H01L45/06 , H01L45/126 , H01L45/143 , H01L45/144 , Y10S438/947
摘要： An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
摘要翻译：提供了高性能多功能SOC所需的嵌入式存储器及其制造方法。存储器包括在衬底上相邻并电连接的双极晶体管，相变存储器件和MOS晶体管。双极晶体管包括由设置在集电极上的SiGe组成的基极。相变存储器件具有通过电流从非晶状态转变为结晶态的相变材料层和由与相变材料层的下表面接触的SiGe构成的加热层。

8. 发明申请

US20100326358A1 BATCH TYPE ATOMIC LAYER DEPOSITION APPARATUS 审中-公开
标题翻译：批量类型原子层沉积装置
公开(公告)号：US20100326358A1
公开(公告)日：2010-12-30
申请号：US12866991
申请日：2009-02-10
申请人： Kyu-Jeong Choi
发明人： Kyu-Jeong Choi
IPC分类号： C23C16/46 , C23C16/00 , C23C16/458
CPC分类号： C23C16/45546 , C23C16/45551
摘要： Provided is a batch-type Atomic Layer Deposition (ALD) apparatus for performing ALD processing collectively for a plurality of substrates, leading to an improved throughput, and achieving perfect uniformity of ALD on the substrates. The batch-type ALD apparatus includes: a chamber that can be kept in a vacuum state; a substrate support member, disposed in the chamber, supporting a plurality of substrates to be stacked one onto another with a predetermined pitch; a substrate movement device moving the substrate support member upward or downward; a gas spray device continuously spraying a gas in a direction parallel to the extending direction of each of the substrates stacked in the substrate support member; and a gas discharge device, disposed in an opposite side of the chamber to the gas spray device, sucking and evacuating the gas sprayed from the gas spray device.
摘要翻译：提供了一种用于多个基板共同进行ALD处理的分批式原子层沉积（ALD）装置，从而提高了生产能力，并实现了基板上ALD的完美均匀性。该批式ALD装置包括：可保持在真空状态的室; 衬底支撑构件，设置在所述腔室中，以预定间距支撑多个待层叠的衬底; 衬底移动装置，使衬底支撑构件向上或向下移动; 气体喷射装置，在平行于堆叠在基板支撑构件中的各基板的延伸方向的方向上连续地喷射气体; 以及气体排出装置，其被设置在与所述气体喷射装置的所述室的相反侧，吸入和排出从所述气体喷射装置喷射的气体。

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