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    • 9. 发明申请
    • Integrated Circuit Memory Devices Having Internal Command Generators Therein that Support Extended Command Sets Using Independent and Dependent Commands
    • 具有内部命令生成器的集成电路存储器件,其中支持使用独立和相关命令的扩展命令集
    • US20090097339A1
    • 2009-04-16
    • US12236978
    • 2008-09-24
    • Young-soo SohnKwang-II ParkSeung-Jun Bae
    • Young-soo SohnKwang-II ParkSeung-Jun Bae
    • G11C7/00G11C8/18
    • G11C11/4076G11C7/1006G11C7/1072G11C7/22G11C8/18
    • Integrated circuit memory devices include an internal command generator and a memory control circuit responsive to an internal command generated by the internal command generator. The internal command generator is configured to generate an internal command in response to a combination of an independent command and at least one dependent command received in sequence by the memory device. For example, the internal command generator may be configured to require the independent command to follow the at least one dependent command in the sequence when generating the internal command from the combination of the independent and dependent commands. Alternatively, the internal command generator may be configured to require the independent command to precede the at least one dependent command in the sequence before generating the internal command from the combination of the independent and dependent commands. These independent and dependent commands may be received by the memory device as respective multi-bit external command signals.
    • 集成电路存储器件包括响应于由内部命令发生器产生的内部命令的内部命令发生器和存储器控制电路。 内部命令生成器被配置为响应于独立命令和由存储器装置依次接收的至少一个依赖命令的组合来生成内部命令。 例如,内部命令生成器可以被配置为在从独立命令和从属命令的组合生成内部命令时,要求独立命令遵循序列中的至少一个从属命令。 或者,内部命令生成器可以被配置为在从独立命令和从属命令的组合生成内部命令之前,要求独立命令在序列中的至少一个从属命令之前。 这些独立和依赖的命令可以被存储器装置接收为相应的多位外部命令信号。
    • 10. 发明申请
    • HIGH-SPEED PHASE-ADJUSTED QUADRATURE DATA RATE (QDR) TRANSCEIVER AND METHOD THEREOF
    • 高速相位调整数据速率(QDR)收发器及其方法
    • US20070206428A1
    • 2007-09-06
    • US11612800
    • 2006-12-19
    • Seung-Jun BaeSeong-Jin JangKwang-II ParkSang-Woong ShinHo-Young Song
    • Seung-Jun BaeSeong-Jin JangKwang-II ParkSang-Woong ShinHo-Young Song
    • G11C7/00
    • G11C7/22G11C7/1051G11C7/1066G11C7/1078G11C7/1093G11C7/222G11C11/4076G11C11/4093G11C11/4096
    • A high-speed double or quadrature data rate interface semiconductor device and a method thereof are provided. A transmitter (e.g., a data transmitting semiconductor device) for high-speed data transmission transmits a first strobe signal and a second strobe signal, which have a phase difference of 90 degrees there-between, a first group (byte of) data, and a second group (byte of) data. The transmitter adjusts the phase of at least one of the first and second strobe signals based on phase-error information fed back from a receiver and then transmits the phase-adjusted strobe signal to the receiver. The receiver receives the first and second strobe signals from the transmitter and receives the first group (byte of) data and the second group (byte of) data using the first and second strobe signals. The receiver does not require a phase-locked loop (PLL) or a delay-locked loop (DLL), thereby decreasing the circuit area and power consumption of the receiver. In addition, since source synchronization is realized using a strobe signal, phase noise can be efficiently removed.
    • 提供了一种高速双倍或正交数据速率接口半导体器件及其方法。 用于高速数据传输的发射机(例如,数据传输半导体器件)发送第一选通信号和第二选通信号,第一选通信号和第二选通信号之间具有90度的相位差,第一组(字节)数据和 第二组(字节)数据。 发射机基于从接收机反馈的相位误差信息来调节第一和第二选通信号中的至少一个的相位,然后将相位调整的选通信号发送到接收机。 接收机从发送器接收第一和第二选通信号,并使用第一和第二选通信号接收数据的第一组(字节)和第二组(字节)数据。 接收机不需要锁相环(PLL)或延迟锁定环(DLL),从而减少接收机的电路面积和功耗。 此外,由于使用选通信号实现源同步,因此可以有效地去除相位噪声。