专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130037086A1 PHOTOVOLTAIC DEVICE 审中-公开
标题翻译：光电器件
公开(公告)号：US20130037086A1
公开(公告)日：2013-02-14
申请号：US13654617
申请日：2012-10-18
申请人： Min PARK , Min-Seok OH , Jung-Tae KIM , Czang-Ho LEE , Myung-Hun SHIN , Byoung-Kyu LEE , Ku-Hyun KANG , Yuk-Hyun NAM , Seung-Jae JUNG , Mi-Hwa LIM , Joon-Young SEO
发明人： Min PARK , Min-Seok OH , Jung-Tae KIM , Czang-Ho LEE , Myung-Hun SHIN , Byoung-Kyu LEE , Ku-Hyun KANG , Yuk-Hyun NAM , Seung-Jae JUNG , Mi-Hwa LIM , Joon-Young SEO
IPC分类号： H01L31/0224
CPC分类号： H01L31/075 , H01L31/022441 , H01L31/046 , Y02E10/548
摘要： A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.
摘要翻译：提供了一种光电器件及其制造方法。光电器件包括：基板; 形成在所述基板上的第一导电层; P层和N层在第一导电层上沿着第一方向交替形成; I层覆盖第一导电层上的P层和N层，其中P层和N层彼此分开第一间隔，I层形成在P层与N层之间分离第一间隔，并且沿着第一方向形成的P层，I层和N层形成单位电池。

2. 发明申请

US20100001359A1 TRANSPARENT CONDUCTIVE LAYER AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：透明导电层及其制造方法
公开(公告)号：US20100001359A1
公开(公告)日：2010-01-07
申请号：US12413979
申请日：2009-03-30
申请人： Seung-Jae JUNG , Yuk-Hyun NAM , Czang-Ho LEE , Myung-Hun SHIN , Min-Seok OH , Byoung-Kyu LEE , Mi-Hwa LIM , Joon-Young SEO
发明人： Seung-Jae JUNG , Yuk-Hyun NAM , Czang-Ho LEE , Myung-Hun SHIN , Min-Seok OH , Byoung-Kyu LEE , Mi-Hwa LIM , Joon-Young SEO
IPC分类号： H01L31/0224 , H01L23/532 , H01L21/28
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/1884 , Y02E10/50
摘要： A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.
摘要翻译：透明导电层包括衬底，设置在衬底上的第一导电层和设置在第一导电层上的第二导电层，其中第二导电层包括纹理表面和暴露第一导电层的开口，其中，开口包括约1微米至约3微米的直径。还公开了制造透明导电层和光电器件的方法。

3. 发明申请

US20110143483A1 TRANSPARENT CONDUCTIVE LAYER AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：透明导电层及其制造方法
公开(公告)号：US20110143483A1
公开(公告)日：2011-06-16
申请号：US13034009
申请日：2011-02-24
申请人： Seung-Jae JUNG , Yuk-Hyun NAM , Czang-Ho LEE , Myung-Hun SHIN , Min-Seok OH , Byoung-Kyu LEE , Mi-Hwa LIM , Joon-Young SEO
发明人： Seung-Jae JUNG , Yuk-Hyun NAM , Czang-Ho LEE , Myung-Hun SHIN , Min-Seok OH , Byoung-Kyu LEE , Mi-Hwa LIM , Joon-Young SEO
IPC分类号： H01L31/0224
CPC分类号： H01L31/022466 , H01L31/022483 , H01L31/02366 , H01L31/1884 , Y02E10/50
摘要： A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.
摘要翻译：透明导电层包括衬底，设置在衬底上的第一导电层和设置在第一导电层上的第二导电层，其中第二导电层包括纹理表面和暴露第一导电层的开口，其中，开口包括约1微米至约3微米的直径。还公开了制造透明导电层和光电器件的方法。

4. 发明申请

US20130045564A1 Method of manufacturing a photovoltaic device 审中-公开
标题翻译：制造光伏器件的方法
公开(公告)号：US20130045564A1
公开(公告)日：2013-02-21
申请号：US13655511
申请日：2012-10-19
申请人： Min PARK , Min-Seok OH , Jung-Tae KIM , Czang-Ho LEE , Myung-Hun SHIN , Byoung-Kyu LEE , Ku-Hyun KANG , Yuk-Hyun NAM , Seung-Jae JUNG , Mi-Hwa LIM , Joon-Young SEO
发明人： Min PARK , Min-Seok OH , Jung-Tae KIM , Czang-Ho LEE , Myung-Hun SHIN , Byoung-Kyu LEE , Ku-Hyun KANG , Yuk-Hyun NAM , Seung-Jae JUNG , Mi-Hwa LIM , Joon-Young SEO
IPC分类号： H01L31/02
CPC分类号： H01L31/075 , H01L31/022441 , H01L31/046 , Y02E10/548
摘要： A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.
摘要翻译：提供了一种光电器件及其制造方法。光电器件包括：基板; 形成在所述基板上的第一导电层; 在第一导电层上沿着第一方向交替形成P层和N层; I层覆盖第一导电层上的P层和N层，其中P层和N层彼此分开第一间隔，I层形成在P层与N层之间分离第一间隔，并且沿着第一方向形成的P层，I层和N层形成单位电池。

5. 发明申请

US20100060305A1 INSPECTING APPARATUS FOR SOLAR CELL AND INSPECTING METHOD USING THE SAME 失效
标题翻译：用于太阳能电池的检查装置和使用它的检查方法
公开(公告)号：US20100060305A1
公开(公告)日：2010-03-11
申请号：US12505364
申请日：2009-07-17
申请人： Myung-Hun SHIN , Min-Seok OH , Ku-Hyun KANG , Yuk-Hyun NAM , Seung-Jae JUNG , Min PARK
发明人： Myung-Hun SHIN , Min-Seok OH , Ku-Hyun KANG , Yuk-Hyun NAM , Seung-Jae JUNG , Min PARK
IPC分类号： G01R31/02
CPC分类号： H02S50/10
摘要： An inspecting apparatus for a solar cell and an inspecting method are provided. The inspecting apparatus for the solar cell includes a head unit having a plurality of probe units, a rotation unit rotating the head unit according to an interval of cells of the solar cell, a controller controlling a rotation angle of the head unit by controlling the rotation unit, and a wire unit connected to the head unit to be electrically connected to the probe units.
摘要翻译：提供了一种用于太阳能电池的检查装置和检查方法。用于太阳能电池的检查装置包括具有多个探针单元的头单元，按照太阳能电池单元的间隔旋转头单元的旋转单元，通过控制旋转来控制头单元的旋转角度的控制器单元和连接到头单元的导线单元以电连接到探针单元。

6. 发明申请

US20120280232A1 PHOTOELECTRIC CONVERSION DEVICE 审中-公开
标题翻译：光电转换器件
公开(公告)号：US20120280232A1
公开(公告)日：2012-11-08
申请号：US13411661
申请日：2012-03-05
申请人： Seung-Jae JUNG , Yuk-Hyun NAM , Ki-Won Jeon
发明人： Seung-Jae JUNG , Yuk-Hyun NAM , Ki-Won Jeon
IPC分类号： H01L31/0376
CPC分类号： H01L31/028 , H01L31/076 , Y02E10/547 , Y02E10/548
摘要： A photoelectric conversion device includes a first photoelectric conversion unit on a substrate and having a first energy bandgap, a second photoelectric conversion unit having a second energy bandgap that is different from the first energy bandgap, the second photoelectric conversion unit being on the first photoelectric conversion unit, and an intermediate unit between the first and second photoelectric conversion units, the intermediate unit including a stack of a first intermediate layer and a second intermediate layer, each of the first intermediate layer and the second intermediate layer having a refractive index that is smaller than that of the first photoelectric conversion unit, the first intermediate layer having a first refractive index, and the second intermediate layer having a second refractive index that is smaller than the first refractive index.
摘要翻译：光电转换装置包括在基板上具有第一能带隙的第一光电转换单元，具有与第一能带隙不同的第二能带隙的第二光电转换单元，第二光电转换单元处于第一光电转换单元和第一和第二光电转换单元之间的中间单元，所述中间单元包括第一中间层和第二中间层的堆叠，所述第一中间层和所述第二中间层中的每一个具有较小的折射率第一中间层具有第一折射率，第二中间层的第二折射率小于第一折射率。

7. 发明申请

US20150302135A1 METHOD FOR DESIGNING AND MANUFACTURING AN INTEGRATED CIRCUIT, SYSTEM FOR CARRYING OUT THE METHOD, AND SYSTEM FOR VERIFYING AN INTEGRATED CIRCUIT 有权
标题翻译：用于设计和制造集成电路的方法，用于实现该方法的系统和用于验证集成电路的系统
公开(公告)号：US20150302135A1
公开(公告)日：2015-10-22
申请号：US14690227
申请日：2015-04-17
申请人： Chul-Hong PARK , Sang-Hoon BAEK , Su-Hyeon KIM , Kyoung-Yun BAEK , Sung-Wook AHN , Sang-Kyu OH , Seung-Jae JUNG
发明人： Chul-Hong PARK , Sang-Hoon BAEK , Su-Hyeon KIM , Kyoung-Yun BAEK , Sung-Wook AHN , Sang-Kyu OH , Seung-Jae JUNG
IPC分类号： G06F17/50
CPC分类号： G06F17/5081 , G06F17/5072
摘要： A method of manufacturing an integrated circuit, a system for carrying out the method, and a system for verifying an integrated circuit may use a standard cell layout including a first layout region that may violate design rules. The method for designing an integrated circuit may comprise receiving a data file that includes a scaling enhanced circuit layout, and designing a first standard cell layout using design rules and the data file. The designing the first standard cell layout may include designing a first layout region of the first standard cell layout using the data file, and designing a second region of the first standard cell layout using the design rules.
摘要翻译：集成电路的制造方法，用于实施该方法的系统以及用于验证集成电路的系统可以使用包括可能违反设计规则的第一布局区域的标准单元布局。用于设计集成电路的方法可以包括接收包括缩放增强电路布局的数据文件，以及使用设计规则和数据文件来设计第一标准单元布局。设计第一标准单元布局可以包括使用数据文件设计第一标准单元布局的第一布局区域，以及使用设计规则设计第一标准单元布局的第二区域。

8. 发明申请

US20110067756A1 THIN FILM SOLAR CELL 审中-公开
标题翻译：薄膜太阳能电池
公开(公告)号：US20110067756A1
公开(公告)日：2011-03-24
申请号：US12862959
申请日：2010-08-25
申请人： Seung-Jae JUNG
发明人： Seung-Jae JUNG
IPC分类号： H01L31/0376
CPC分类号： H01L31/076 , H01L31/0352 , H01L31/03685 , H01L31/03762 , H01L31/03765 , H01L31/0547 , H01L31/056 , Y02E10/52 , Y02E10/545 , Y02E10/548
摘要： A thin film solar cell includes; a first electrode, a first active layer disposed on the first electrode, a porous intermediate layer disposed on the first active layer, a second active layer disposed on the intermediate layer and a second electrode disposed on the second active layer.
摘要翻译：薄膜太阳能电池包括：第一电极，设置在第一电极上的第一有源层，设置在第一有源层上的多孔中间层，设置在中间层上的第二有源层和设置在第二有源层上的第二电极。

9. 发明申请

US20160197121A1 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：可变电阻存储器件及其制造方法
公开(公告)号：US20160197121A1
公开(公告)日：2016-07-07
申请号：US14984477
申请日：2015-12-30
申请人： Jin-Woo LEE , Youn-Sean KANG , Seung-Jae JUNG , Hyun-Su JU , Masayuki TERAI
发明人： Jin-Woo LEE , Youn-Sean KANG , Seung-Jae JUNG , Hyun-Su JU , Masayuki TERAI
IPC分类号： H01L27/24 , H01L43/08 , H01L43/02 , H01L45/00 , H01L27/22
CPC分类号： H01L27/2463 , H01L27/224 , H01L27/2409 , H01L43/12 , H01L45/1675
摘要： A variable resistance memory device includes a plurality of first conductive layer pattern, a plurality of second conductive layer patterns over the first conductive layer patterns, and a plurality of lower cell structures including a switching element and a variable resistance element, the lower cell structures being formed at intersections at which the first conductive layer patterns and the second conductive layer patterns overlap each other. The first conductive layer patterns, the second conductive layer patterns and the lower cell structures serves as one of a memory cell, a first dummy pattern structure and a second dummy pattern structure. The first dummy pattern structure is formed on both edge portions in the first direction, and the second conductive layer pattern of the first dummy pattern structure protrudes in the first direction from a sidewall of the lower cell structure thereunder, and the second dummy pattern structure is formed on both edge portions in the second direction, and the first conductive layer pattern of the second dummy pattern structure protrudes in the second direction from a sidewall of the lower cell structure thereon. Failures of the variable resistance memory device due to the etch residue may decrease.
摘要翻译：可变电阻存储器件包括多个第一导电层图案，多个第一导电层图案上的第二导电层图案，以及包括开关元件和可变电阻元件的多个下单元结构，下单元结构为形成在第一导电层图案和第二导电层图案彼此重叠的交点处。第一导电层图案，第二导电层图案和下单元结构用作存储单元，第一虚设图案结构和第二虚设图案结构之一。第一虚设图形结构形成在第一方向的两个边缘部分上，第一虚设图案结构的第二导电层图案从其下部单元结构的侧壁沿第一方向突出，第二虚设图案结构为形成在第二方向的两个边缘部分上，并且第二虚设图案结构的第一导电层图案在其下面的单元结构的侧壁上沿第二方向突出。由于蚀刻残留导致的可变电阻存储器件的故障可能降低。

10. 发明申请

US20160027845A1 VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
标题翻译：可变电阻存储器件及其制造方法
公开(公告)号：US20160027845A1
公开(公告)日：2016-01-28
申请号：US14682506
申请日：2015-04-09
申请人： Dong-Jun SEONG , Youn-Seon KANG , Seung-Jae JUNG , Jung-Dal CHOI
发明人： Dong-Jun SEONG , Youn-Seon KANG , Seung-Jae JUNG , Jung-Dal CHOI
IPC分类号： H01L27/24 , H01L45/00
CPC分类号： H01L27/2463 , H01L27/2409 , H01L27/2481 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/144 , H01L45/146 , H01L45/147 , H01L45/1675
摘要： A variable resistance memory device, and methods of manufacturing the same, include a plurality of first conductive structures extending in a first direction, a plurality of second conductive structures extending in a second direction crossing the first direction over the first conductive structures, the second conductive structures, and a plurality of memory cells that are formed at intersections at which the first conductive structures and the second conductive structures overlap each other, and each includes a selection element and a variable resistance element sequentially stacked. An upper surface of each of the first conductive structures has a width in the second direction less than a width of a bottom surface of each of the selection elements.
摘要翻译：可变电阻存储器件及其制造方法包括沿第一方向延伸的多个第一导电结构，沿与第一导电结构相交的第一方向的第二方向延伸的多个第二导电结构，第二导电结构和形成在第一导电结构和第二导电结构彼此重叠的交点处的多个存储单元，并且每个存储单元包括依次堆叠的选择元件和可变电阻元件。每个第一导电结构的上表面在第二方向上的宽度小于每个选择元件的底表面的宽度。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式