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    • 5. 发明授权
    • Non-volatile memory devices with multiple layers having band gap relationships among the layers
    • 具有层之间具有带隙关系的多层的非易失性存储器件
    • US08460999B2
    • 2013-06-11
    • US13067405
    • 2011-05-31
    • Seung-Jae BaikHong-Suk KimSi-Young ChoiKi-Hyun HwangSang-Jin Hyun
    • Seung-Jae BaikHong-Suk KimSi-Young ChoiKi-Hyun HwangSang-Jin Hyun
    • H01L21/336
    • H01L29/792H01L21/28282H01L29/42348H01L29/513H01L29/66833
    • A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
    • 非易失性存储器件可以包括:半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。 隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。 第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。 第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。 非易失性存储器件的制造方法可以包括:在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。
    • 6. 发明授权
    • Nonvolatile memory devices with multiple layers having band gap relationships among the layers
    • 具有层之间具有带隙关系的多层的非易失性存储器件
    • US07973355B2
    • 2011-07-05
    • US12216945
    • 2008-07-14
    • Seung-Jae BaikHong-Suk KimSi-Young ChoiKi-Hyun HwangSang-Jin Hyun
    • Seung-Jae BaikHong-Suk KimSi-Young ChoiKi-Hyun HwangSang-Jin Hyun
    • H01L29/792
    • H01L29/792H01L21/28282H01L29/42348H01L29/513H01L29/66833
    • A nonvolatile memory device may include: a tunnel insulating layer on a semiconductor substrate; a charge storage layer on the tunnel insulating layer; a blocking insulating layer on the charge storage layer; and a control gate electrode on the blocking insulating layer. The tunnel insulating layer may include a first tunnel insulating layer and a second tunnel insulating layer. The first tunnel insulating layer and the second tunnel insulating layer may be sequentially stacked on the semiconductor substrate. The second tunnel insulating layer may have a larger band gap than the first tunnel insulating layer. A method for fabricating a nonvolatile memory device may include: forming a tunnel insulating layer on a semiconductor substrate; forming a charge storage layer on the tunnel insulating layer; forming a blocking insulating layer on the charge storage layer; and forming a control gate electrode on the blocking insulating layer.
    • 非易失性存储器件可以包括:半导体衬底上的隧道绝缘层; 隧道绝缘层上的电荷存储层; 电荷存储层上的阻挡绝缘层; 以及在所述阻挡绝缘层上的控制栅电极。 隧道绝缘层可以包括第一隧道绝缘层和第二隧道绝缘层。 第一隧道绝缘层和第二隧道绝缘层可以顺序堆叠在半导体衬底上。 第二隧道绝缘层可以具有比第一隧道绝缘层更大的带隙。 非易失性存储器件的制造方法可以包括:在半导体衬底上形成隧道绝缘层; 在隧道绝缘层上形成电荷存储层; 在电荷存储层上形成阻挡绝缘层; 以及在所述阻挡绝缘层上形成控制栅电极。