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1. 发明申请

US20060284113A1 Off-axis projection optical system and extreme ultraviolet lithography apparatus using the same 有权
标题翻译：离轴投影光学系统和使用其的极紫外光刻设备
公开(公告)号：US20060284113A1
公开(公告)日：2006-12-21
申请号：US11453775
申请日：2006-06-16
申请人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
IPC分类号： G21G5/00 , A61N5/00
CPC分类号： G03F7/70241 , G03F7/70941
摘要： An off-axis projection optical system including first and second mirrors that are off-axially arranged is provided. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation. R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2
摘要翻译：提供了一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB＆gt;和i＆lt; 2＆gt;可以满足以下等式。 <？in-line-formula description =“In-line Formulas”end =“lead”？> R＆lt; 1t＆gt; cos＆lt; 1＆lt; 1＆lt; 2＆lt; > cos i <2> <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end = “引线”→R 1> = R 1t＆lt; 2＆gt;＆lt; 2＆lt;＆lt; =“在线公式”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead”？> R <2> 2t 2 “in-line-formula description =”In-line Formulas“end =”tail“？>

2. 发明申请

US20060134531A1 Mask for electromagnetic radiation and method of fabricating the same 审中-公开
标题翻译：电磁辐射掩模及其制造方法
公开(公告)号：US20060134531A1
公开(公告)日：2006-06-22
申请号：US11274474
申请日：2005-11-16
申请人： I-Hun Song , Won-Il Ryu , Suk-Pil Kim , Hoon Kim , Seung-Hyuk Chang , Won-Joo Kim , Young-Soo Park
发明人： I-Hun Song , Won-Il Ryu , Suk-Pil Kim , Hoon Kim , Seung-Hyuk Chang , Won-Joo Kim , Young-Soo Park
IPC分类号： G03C5/00 , G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A mask for lithography and a method of manufacturing the same. The mask may include a substrate, a reflection layer formed of a material capable of reflecting electromagnetic rays on the substrate and an absorption pattern formed in a desired pattern such that absorbing regions with respect to electromagnetic rays and windows through which electromagnetic rays pass are formed, wherein the absorption pattern includes at least one side surface that is adjacent to the window and is inclined with respect to the reflection layer. The method may include forming a reflection layer which is formed of a material capable of reflecting electromagnetic rays on a substrate, forming an absorption layer which is formed of a material capable of absorbing electromagnetic rays on the refection layer, and patterning the absorption layer to form an absorption pattern with at least one side surface adjacent to a window that has an inclined side surface with respect to the reflection layer.
摘要翻译：光刻用掩模及其制造方法。掩模可以包括基板，由能够在基板上反射电磁射线的材料形成的反射层和形成为期望图案的吸收图案，使得形成相对于电磁射线通过的电磁射线和窗口的吸收区域，其中所述吸收图案包括与所述窗口相邻并且相对于所述反射层倾斜的至少一个侧表面。该方法可以包括形成由能够在基板上反射电磁射线的材料形成的反射层，形成由能够在反射层上吸收电磁射线的材料形成的吸收层，以及图案化吸收层以形成具有与窗口相邻的至少一个侧表面的吸收图案，该窗口具有相对于反射层的倾斜侧表面。

3. 发明授权

US07301694B2 Off-axis projection optical system and extreme ultraviolet lithography apparatus using the same 有权
标题翻译：离轴投影光学系统和使用其的极紫外光刻设备
公开(公告)号：US07301694B2
公开(公告)日：2007-11-27
申请号：US11453775
申请日：2006-06-16
申请人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
发明人： Seung-Hyuk Chang , I-Hun Song , Young-Soo Park , Suk-Pil Kim , Hoon Kim
IPC分类号： G02B5/08
CPC分类号： G03F7/70241 , G03F7/70941
摘要： Example embodiments are directed to an off-axis projection optical system including first and second mirrors that are off-axially arranged. The tangential and sagittal radii of curvature of the first mirror may be R1t and R1s, respectively. The tangential and sagittal radii of curvature of the second mirror may be R2t and R2s, respectively. The incident angle of the beam from an object point to the first mirror 10 may be i1, and an incident angle of the beam reflected from the first mirror 10 to the second mirror 30 is i2. The values of R1t, R1s, R2t, R2s, i1 and i2 may satisfy the following Equation R1t cos i1=R2t cos i2 R1s=R1t cos2i1 R2s=R2t cos2i2.
摘要翻译：示例性实施例涉及一种离轴投影光学系统，其包括非轴向布置的第一和第二反射镜。第一反射镜的切向和矢状曲率半径可以分别为R 1t 1和R 1s 1。第二反射镜的切向和矢状曲率半径可以分别为R 2t 2和R 2s 3。从物点到第一反射镜10的光束的入射角度可以为1＆lt; 1＆gt;，从第一反射镜10反射到第二反射镜30的光束的入射角为 2 。 R 1，R 1，R 2，R 2，R 2，R 1，R 2， SUB>和i <2>可以满足以下等式<？in-line-formula description =“In-line Formulas”end =“lead”？> R 1t cos α-in-line-formula description =“In-line Formulas”end =“tail”？> R＆lt; 1s＆lt; 1＆lt; 1＆lt; 1＆lt; i <？in-line-formula description =“In-line Formulas”end =“tail”？> <？in-line-formula description =“In-line Formulas”end =“lead “？”R 2s 2 = R 2t 2＆lt; 2＆lt; 2＆lt; 2＆lt;＆lt;行内公式描述= “直线公式”end =“tail”？>

4. 发明申请

US20060281017A1 Reflection mask for EUV photolithography and method of fabricating the reflection mask 有权
标题翻译：用于EUV光刻的反射掩模和制造反射掩模的方法
公开(公告)号：US20060281017A1
公开(公告)日：2006-12-14
申请号：US11441835
申请日：2006-05-26
申请人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
发明人： Suk-pil Kim , I-hun Song , Young-Soo Park , Seung-hyuk Chang , Hoon Kim
IPC分类号： G21K5/00 , G03F1/00
CPC分类号： G21K1/062 , B82Y10/00 , B82Y40/00 , G03F1/24
摘要： A reflection mask for extreme ultraviolet (EUV) photolithography and a method of fabricating the same, in which the reflection mask includes a substrate, a lower reflection layer formed in a multi-layer structure on the substrate and including a material reflecting EUV light, an upper reflection layer formed in a multi-layer structure on the lower reflection layer and reflecting EUV light, and a phase reversing layer formed between the lower reflection layer and the upper reflection layer in a certain pattern and causing destructive interference between reflection light from the upper reflection layer and reflection light from the lower reflection layer. An incidence of a shadow effect can be reduced and unnecessary EUV light can be eliminated, so that a pattern on the reflection mask can be projected precisely on a silicon wafer. Since the phase reversing layer includes the same material as the reflection layer and an absorption layer, mask fabrication processes can be handled easily.
摘要翻译：一种用于极紫外（EUV）光刻的反射掩模及其制造方法，其中反射掩模包括基板，在基板上形成为多层结构的下反射层，并且包括反射EUV光的材料，在下反射层上形成多层结构并反射EUV光的上反射层和以一定图案形成在下反射层和上反射层之间的相位反转层，并且产生来自上层的反射光之间的相消干涉反射层和来自下反射层的反射光。可以减少阴影效应的入射，并且可以消除不必要的EUV光，使得反射掩模上的图案可以精确地投影在硅晶片上。由于相位反转层包括与反射层和吸收层相同的材料，因此可以容易地处理掩模制造工艺。

5. 发明申请

US20060292313A1 Methods of forming a more highly-oriented silicon layer and substrate having the same 有权
标题翻译：形成更高取向硅层的方法和具有该硅层的基板的方法
公开(公告)号：US20060292313A1
公开(公告)日：2006-12-28
申请号：US11473067
申请日：2006-06-23
申请人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
发明人： Wenxu Xianyu , Hans Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
IPC分类号： C09K19/00
CPC分类号： C30B29/06 , Y10T428/10
摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.
摘要翻译：提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。所述方法可以包括在基底基板上形成铝（Al）层，通过在真空下重结晶Al层，形成更高取向的Al层，形成更高取向的γ-Al 2 O 在更高取向的Al层上和/或在更高取向的γ-Al 2 O 3上外延生长硅层3层 >层。该方法可用于制造具有较高载流子迁移率的半导体器件。

6. 发明授权

US07662678B2 Method of forming a more highly-oriented silicon layer and substrate having the same 有权
标题翻译：形成更高取向硅层的方法和具有该硅层的基板
公开(公告)号：US07662678B2
公开(公告)日：2010-02-16
申请号：US11473067
申请日：2006-06-23
申请人： Wenxu Xianyu , Hans S. Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
发明人： Wenxu Xianyu , Hans S. Cho , Takashi Noguchi , Young-Soo Park , Xiaoxin Zhang , Huaxiang Yin , Hyuck Lim , Kyung-Bae Park , Suk-Pil Kim
IPC分类号： H01L21/00 , H01L29/76
CPC分类号： C30B29/06 , Y10T428/10
摘要： Provided are methods of forming a more highly-oriented silicon thin layer having a larger grain size, and a substrate having the same. The methods may include forming an aluminum (Al) layer on a base substrate, forming a more highly-oriented Al layer by recrystallizing the Al layer under vacuum, forming a more highly-oriented γ-Al2O3 layer on the more highly-oriented Al layer and/or epitaxially growing a silicon layer on the more highly-oriented γ-Al2O3 layer. The method may be used to manufacture a semiconductor device having higher carrier mobility.
摘要翻译：提供了形成具有较大晶粒尺寸的更高取向硅薄层的方法以及具有其的基板。所述方法可以包括在基底上形成铝（Al）层，通过在真空下重结晶Al层形成更高取向的Al层，在更高取向的Al层上形成更高取向的γ-Al 2 O 3层和/或在更高取向的γ-Al 2 O 3层上外延生长硅层。该方法可用于制造具有较高载流子迁移率的半导体器件。

7. 发明授权

US07919365B2 Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor 有权
标题翻译： ZnO薄膜结构和ZnO薄膜晶体管的制造方法以及ZnO薄膜结构和ZnO薄膜晶体管
公开(公告)号：US07919365B2
公开(公告)日：2011-04-05
申请号：US11702211
申请日：2007-02-05
申请人： Chang-Jung Kim , I-Hun Song , Dong-Hun Kang , Young-Soo Park , Eun-Ha Lee
发明人： Chang-Jung Kim , I-Hun Song , Dong-Hun Kang , Young-Soo Park , Eun-Ha Lee
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , H01L21/02381 , H01L21/02422 , H01L21/02554 , H01L21/02631 , H01L29/45 , H01L29/78618
摘要： Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
摘要翻译：提供了制造ZnO薄膜结构和ZnO薄膜晶体管（TFT）的方法，以及ZnO薄膜结构和ZnO薄膜晶体管。制造ZnO薄膜结构的方法可以包括在氧气氛中在衬底上形成ZnO薄膜，在ZnO薄膜上形成对氧具有亲和性的金属的氧扩散层，并加热ZnO薄膜和氧扩散层将ZnO薄膜的氧气扩散到氧扩散层中。

8. 发明申请

US20070241327A1 Fabrication methods of a ZnO thin film structure and a ZnO thin film transistor, and a ZnO thin film structure and a ZnO thin film transistor 有权
标题翻译： ZnO薄膜结构和ZnO薄膜晶体管的制造方法以及ZnO薄膜结构和ZnO薄膜晶体管
公开(公告)号：US20070241327A1
公开(公告)日：2007-10-18
申请号：US11702211
申请日：2007-02-05
申请人： Chang-Jung Kim , I-Hun Song , Dong-Hun Kang , Young-Soo Park , Eun-Ha Lee
发明人： Chang-Jung Kim , I-Hun Song , Dong-Hun Kang , Young-Soo Park , Eun-Ha Lee
IPC分类号： H01L29/10
CPC分类号： H01L29/7869 , H01L21/02381 , H01L21/02422 , H01L21/02554 , H01L21/02631 , H01L29/45 , H01L29/78618
摘要： Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
摘要翻译：提供了制造ZnO薄膜结构和ZnO薄膜晶体管（TFT）的方法，以及ZnO薄膜结构和ZnO薄膜晶体管。制造ZnO薄膜结构的方法可以包括在氧气氛中在衬底上形成ZnO薄膜，在ZnO薄膜上形成对氧具有亲和性的金属的氧扩散层，并加热ZnO薄膜和氧扩散层将ZnO薄膜的氧气扩散到氧扩散层中。

9. 发明授权

US07724156B2 Apparatus and method for character entry in a portable terminal 有权
标题翻译：便携式终端中字符输入的装置和方法
公开(公告)号：US07724156B2
公开(公告)日：2010-05-25
申请号：US11598028
申请日：2006-11-13
申请人： Young-Soo Park , Jae-Gwa Lee
发明人： Young-Soo Park , Jae-Gwa Lee
IPC分类号： H03M11/00
CPC分类号： G06F3/0236
摘要： A character entry method and apparatus in a terminal in which characters are grouped into a plurality of character sets and a representative character of each of the character sets is imprinted on a respective key are provided. In the character entry method, when a key imprinted with a representative character is pressed, characters belonging to a character set represented by the representative character are displayed and any one of the displayed characters is marked with a selection indication. When a move key is pressed, the duration of the key press of the move key is measured and the selection indication is sequentially moved. When input of the move key is released, a character marked with the selection indication is entered.
摘要翻译：提供了一种终端中的字符输入方法和装置，其中字符被分组成多个字符集并且每个字符集的代表性字符被压印在相应的键上。在字符输入方法中，当按下表示代表性字符的键时，显示属于由代表字符表示的字符集的字符，并且显示字符中的任一个用选择指示标记。当按下移动键时，测量移动键的按键持续时间，顺序移动选择指示。当释放移动键的输入时，输入标有选择指示的字符。

10. 发明申请

US20070241333A1 Amorphous silicon thin film transistor, organic light-emitting display device including the same and method thereof 审中-公开
标题翻译：非晶硅薄膜晶体管，包括其的有机发光显示装置及其方法
公开(公告)号：US20070241333A1
公开(公告)日：2007-10-18
申请号：US11703255
申请日：2007-02-07
申请人： Jae-Chul Park , Young-Soo Park , Young-Kwan Cha
发明人： Jae-Chul Park , Young-Soo Park , Young-Kwan Cha
IPC分类号： H01L31/00
CPC分类号： H01L29/78606 , H01L27/1296 , H01L27/3244
摘要： An amorphous silicon thin film transistor, an organic light-emitting display (OLED) device including the same and method thereof are provided. The example amorphous silicon thin film transistor may include an amorphous silicon thin film transistor portion including a gate electrode, a gate insulating layer, an amorphous silicon layer, and source/drain electrodes and a heat generating portion generating heat and applying the heat to the amorphous silicon layer to reduce a threshold voltage of the amorphous silicon thin film transistor portion. The example method may include applying heat to an amorphous silicon layer if a threshold voltage of an amorphous silicon thin film transistor rises above a default level, the amorphous silicon thin film transistor including the amorphous silicon layer, the applied heat configured to reset the threshold voltage to the default level. The example OLED device may include a substrate and a plurality of pixels arranged in a matrix form on the substrate, each of the pixels comprising a switching transistor, a driving transistor, and an organic light-emitting diode.
摘要翻译：提供非晶硅薄膜晶体管，包括该非晶硅薄膜晶体管的有机发光显示器件（OLED）器件及其方法。示例性非晶硅薄膜晶体管可以包括非晶硅薄膜晶体管部分，其包括栅极，栅极绝缘层，非晶硅层和源极/漏极电极和产生热量的发热部分，并将热量施加到非晶硅硅层以降低非晶硅薄膜晶体管部分的阈值电压。如果非晶硅薄膜晶体管的阈值电压上升到默认水平以上，则非晶硅薄膜晶体管包括非晶硅层，施加的热量被配置为复位阈值电压到默认级别。示例OLED器件可以包括衬底和以矩阵形式布置在衬底上的多个像素，每个像素包括开关晶体管，驱动晶体管和有机发光二极管。

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