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1. 发明申请

US20100051911A1 Organic Thin Film Transistor Array Panel and Method of Manufacturing the Same 审中-公开
标题翻译：有机薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20100051911A1
公开(公告)日：2010-03-04
申请号：US12391883
申请日：2009-02-24
申请人： Seung-Hwan Cho , Bo-Sung Kim , Young-Min Kim , Shi-Woo Rhee , Dong-Jin Yun
发明人： Seung-Hwan Cho , Bo-Sung Kim , Young-Min Kim , Shi-Woo Rhee , Dong-Jin Yun
IPC分类号： H01L51/50 , H01L51/56
CPC分类号： H01L51/0545 , H01L51/0036 , H01L51/0053 , H01L51/0056 , H01L51/0078
摘要： In an organic thin film transistor array panel includes a source electrode and a drain electrode having a double layer including a metal and a metal oxide. The organic thin film transistor array panel is formed through a lift-off process or by using a shadow mask. The thin film transistor array panel has excellent characteristics and reduced manufacturing process costs.
摘要翻译：在有机薄膜晶体管阵列面板中包括具有包括金属和金属氧化物的双层的源电极和漏电极。有机薄膜晶体管阵列板通过剥离工艺或使用荫罩形成。薄膜晶体管阵列面板具有优异的特性和降低的制造工艺成本。

2. 发明授权

US08519393B2 Thin film transistor array panel and manufacturing method thereof 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08519393B2
公开(公告)日：2013-08-27
申请号：US12823043
申请日：2010-06-24
申请人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
发明人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
IPC分类号： H01L27/146 , H01L29/786
CPC分类号： H01L29/66765 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。源电极和漏极设置在半导体的第二部分和栅极绝缘层上。

3. 发明申请

US20100128190A1 Liquid Crystal Display and Manufacturing Method of the Same 审中-公开
标题翻译：液晶显示及其制造方法
公开(公告)号：US20100128190A1
公开(公告)日：2010-05-27
申请号：US12431503
申请日：2009-04-28
申请人： Bo-Kyoung Ahn , Bo-Sung Kim , Young-Min Kim , Nam-Ok Jung , Seung-Hwan Cho
发明人： Bo-Kyoung Ahn , Bo-Sung Kim , Young-Min Kim , Nam-Ok Jung , Seung-Hwan Cho
IPC分类号： G02F1/1368 , H01L21/336
CPC分类号： G02F1/13394 , G02F1/133707 , G02F1/136227
摘要： Disclosed is a liquid crystal display including a first substrate, a second substrate facing the first substrate, a thin film transistor formed on the first substrate and including a semiconductor layer, a convex pattern formed on the semiconductor layer and provided at a side surface thereof with a concave-convex section, and a liquid crystal layer interposed between the first and second substrates.
摘要翻译：公开了一种液晶显示器，包括第一基板，面对第一基板的第二基板，形成在第一基板上并包括半导体层的薄膜晶体管，形成在半导体层上并在其侧表面上设置的凸起图案，凹凸部分和插在第一和第二基板之间的液晶层。

4. 发明授权

US08367444B2 Display substrate and method of manufacturing the same 有权
标题翻译：显示基板及其制造方法
公开(公告)号：US08367444B2
公开(公告)日：2013-02-05
申请号：US12902761
申请日：2010-10-12
申请人： Young-Min Kim , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Kang-Moon Jo
发明人： Young-Min Kim , Bo-Sung Kim , Seon-Pil Jang , Seung-Hwan Cho , Kang-Moon Jo
IPC分类号： H01L21/02
CPC分类号： H01L29/78606 , H01L27/1214 , H01L27/124 , H01L27/1288
摘要： A display substrate includes a gate line, a gate insulation layer, a data line, a switching element, a protection insulation layer, a gate pad portion and a data pad portion. The gate insulation layer is disposed on the gate line. The switching element is connected to the gate line and the data line. The protection insulation layer is disposed on the switching element. The gate pad portion includes a first gate pad electrode which makes contact with an end portion of the gate line through a first hole formed through the gate insulation layer, and a second gate pad electrode which makes contact with the first gate pad electrode through a second hole formed through the protection insulation layer. The data pad portion includes a data pad electrode which makes contact with an end portion of the data line through a third hole formed through the protection insulation layer.
摘要翻译：显示基板包括栅极线，栅极绝缘层，数据线，开关元件，保护绝缘层，栅极焊盘部分和数据焊盘部分。栅极绝缘层设置在栅极线上。开关元件连接到栅极线和数据线。保护绝缘层设置在开关元件上。栅极焊盘部分包括通过形成在栅极绝缘层上的第一孔与栅极线的端部接触的第一栅极焊盘电极和通过第二栅极焊盘电极与第一栅极焊盘电极接触的第二栅极焊盘电极孔通过保护层形成。数据焊盘部分包括通过形成在保护绝缘层上的第三孔与数据线的端部接触的数据焊盘电极。

5. 发明申请

US20110140094A1 THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20110140094A1
公开(公告)日：2011-06-16
申请号：US12823043
申请日：2010-06-24
申请人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
发明人： Tae-Young Choi , Hi-Kuk Lee , Bo-Sung Kim , Young-Min Kim , Seung-Hwan Cho , Young-Soo Yoon , Yeon-Taek Jeong , Seon-Pil Jang
IPC分类号： H01L27/12 , H01L21/84 , H01L21/34 , H01L29/12
CPC分类号： H01L29/66765 , H01L21/02554 , H01L21/02565 , H01L27/1225 , H01L29/7869
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a gate electrode disposed on an insulation substrate; a gate insulating layer disposed on the gate electrode; a semiconductor disposed on the gate insulating layer; an etching stop layer disposed on the semiconductor; an insulating layer disposed on the gate insulating layer; and a source electrode and a drain electrode overlapping the semiconductor. The semiconductor and the gate insulating layer have a first portion on which the etching stop layer and the insulating layer are disposed, and a second portion on which etching stop layer and the insulating layer are not disposed. The source electrode and the drain electrode are disposed on the second portion of the semiconductor and the gate insulating layer
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括：栅极，设置在绝缘基板上; 设置在栅电极上的栅极绝缘层; 设置在所述栅极绝缘层上的半导体; 设置在所述半导体上的蚀刻停止层; 设置在所述栅极绝缘层上的绝缘层; 以及与半导体重叠的源电极和漏电极。半导体和栅极绝缘层具有其上设置有蚀刻停止层和绝缘层的第一部分，以及不设置蚀刻停止层和绝缘层的第二部分。源电极和漏极设置在半导体的第二部分和栅极绝缘层上

6. 发明申请

US20070284585A1 THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管阵列及其制造方法
公开(公告)号：US20070284585A1
公开(公告)日：2007-12-13
申请号：US11559162
申请日：2006-11-13
申请人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
发明人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
IPC分类号： H01L29/04
CPC分类号： H01L27/3274 , H01L27/3262 , H01L51/0005 , H01L51/0545 , H01L51/0558
摘要： A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate electrode; a source electrode connected to the data line; a drain electrode opposite the source electrode; an organic semiconductor partly in contact with the source electrode and the drain electrode; a gate insulating member positioned between the gate electrode and the organic semiconductor; and an insulating bank having an opening where the organic semiconductor and the gate insulating member are positioned and is formed in a cross shape in which a horizontal part and a vertical part intersect.
摘要翻译：薄膜晶体管阵列面板及其制造方法包括：基板; 形成在所述基板上的数据线; 与数据线相交并且包括栅电极的栅极线; 连接到数据线的源电极; 与源电极相对的漏电极; 部分地与源电极和漏电极接触的有机半导体; 定位在所述栅电极和所述有机半导体之间的栅极绝缘构件; 以及绝缘堤，其具有开口，有机半导体和栅极绝缘构件被定位并且形成为水平部分和垂直部分相交的十字形状。

7. 发明授权

US07781774B2 Thin film transistor array panel 有权
标题翻译：薄膜晶体管阵列面板
公开(公告)号：US07781774B2
公开(公告)日：2010-08-24
申请号：US11559162
申请日：2006-11-13
申请人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
发明人： Seung-Hwan Cho , Young-Min Kim , Keun-Kyu Song
IPC分类号： H01L29/04 , H01L31/036
CPC分类号： H01L27/3274 , H01L27/3262 , H01L51/0005 , H01L51/0545 , H01L51/0558
摘要： A thin film transistor array panel and a method of manufacturing the same include: a substrate; a data line formed on the substrate; a gate line intersecting the data line and including a gate electrode; a source electrode connected to the data line; a drain electrode opposite the source electrode; an organic semiconductor partly in contact with the source electrode and the drain electrode; a gate insulating member positioned between the gate electrode and the organic semiconductor; and an insulating bank having an opening where the organic semiconductor and the gate insulating member are positioned and is formed in a cross shape in which a horizontal part and a vertical part intersect.
摘要翻译：薄膜晶体管阵列面板及其制造方法包括：基板; 形成在所述基板上的数据线; 与数据线相交并且包括栅电极的栅极线; 连接到数据线的源电极; 与源电极相对的漏电极; 部分地与源电极和漏电极接触的有机半导体; 定位在所述栅电极和所述有机半导体之间的栅极绝缘构件; 以及绝缘堤，其具有开口，有机半导体和栅极绝缘构件被定位并且形成为水平部分和垂直部分相交的十字形状。

8. 发明申请

US20080035919A1 Thin film transistor array panel and method of manufacturing the same 审中-公开
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US20080035919A1
公开(公告)日：2008-02-14
申请号：US11891587
申请日：2007-08-09
申请人： Jung-Han Shin , Keun-Kyu Song , Tae-Young Choi , Young-Min Kim , Joon-Hak Oh , Seung-Hwan Cho
发明人： Jung-Han Shin , Keun-Kyu Song , Tae-Young Choi , Young-Min Kim , Joon-Hak Oh , Seung-Hwan Cho
IPC分类号： H01L51/10 , H01L51/48
CPC分类号： H01L27/3274 , H01L21/84 , H01L27/12 , H01L51/56
摘要： Disclosed is a thin film transistor array panel including a substrate, a data line formed on the substrate, a gate line that intersects the data line and includes a gate electrode, a source electrode connected to the data line, and a drain electrode facing the source electrode. An organic semiconductor contacts the source electrode and the drain electrode via an insulating layer having an opening that defines the location of the organic semiconductor. The insulating layer includes an acrylic photosensitive resin having a fluorine-containing compound. A method of manufacturing the above-described thin film transistor array panel is disclosed.
摘要翻译：公开了一种薄膜晶体管阵列面板，其包括基板，形成在基板上的数据线，与数据线相交并包括栅电极的栅极线，连接到数据线的源电极和面对源极的漏电极电极。有机半导体通过具有限定有机半导体的位置的开口的绝缘层与源电极和漏电极接触。绝缘层包括具有含氟化合物的丙烯酸类感光性树脂。公开了一种制造上述薄膜晶体管阵列面板的方法。

9. 发明授权

US08241936B2 Display substrate, method of manufacturing the same and display panel having the same 有权
标题翻译：显示基板，其制造方法以及具有该基板的显示面板
公开(公告)号：US08241936B2
公开(公告)日：2012-08-14
申请号：US13230111
申请日：2011-09-12
申请人： Je-Hun Lee , Young-Min Kim , Bo-Sung Kim , Jun-Young Lee , Sung-Wook Kang
发明人： Je-Hun Lee , Young-Min Kim , Bo-Sung Kim , Jun-Young Lee , Sung-Wook Kang
IPC分类号： H01L20/00
CPC分类号： H01L51/102 , G02F1/13439 , H01L27/283 , H01L51/0541 , H01L51/0545
摘要： An improved display substrate is provided to reduce surface defects on insulating layers of organic thin film transistors. Related methods of manufacture are also provided. In one example, a display substrate includes a base, a plurality of data lines, a plurality of gate lines, a pixel defined by the data lines and the gate lines, an organic thin film transistor, and a pixel electrode. The data lines are on the base and are oriented in a first direction. The gate lines are oriented in a second direction that crosses the first direction. The organic thin film transistor includes a source electrode electrically connected to one of the data lines, a gate electrode electrically connected to one of the gate lines, and an organic semiconductor layer. The pixel electrode is disposed in the pixel and electrically connected to the organic thin film transistor. The pixel electrode comprises a transparent oxynitride.
摘要翻译：提供改进的显示基板以减少有机薄膜晶体管的绝缘层上的表面缺陷。还提供了相关的制造方法。在一个示例中，显示基板包括基底，多条数据线，多条栅极线，由数据线和栅极线限定的像素，有机薄膜晶体管和像素电极。数据线在基座上并且朝向第一方向。栅极线在与第一方向交叉的第二方向上取向。有机薄膜晶体管包括电连接到数据线之一的源电极，电连接到栅极线之一的栅电极和有机半导体层。像素电极设置在像素中并电连接到有机薄膜晶体管。像素电极包括透明氧氮化物。

10. 发明授权

US08168977B2 Liquid crystal display and method for manufacturing the same 有权
标题翻译：液晶显示器及其制造方法
公开(公告)号：US08168977B2
公开(公告)日：2012-05-01
申请号：US12622078
申请日：2009-11-19
申请人： Tae-Young Choi , Bo-Sung Kim , Young-Min Kim
发明人： Tae-Young Choi , Bo-Sung Kim , Young-Min Kim
IPC分类号： H01L29/04
CPC分类号： H01L27/1225 , G02F1/136209 , G02F1/13624 , G02F2001/136222 , H01L27/1248 , H01L27/1288
摘要： The present invention provides a thin film transistor having high performance in a liquid crystal display, and a manufacturing method of a liquid crystal display according to an exemplary embodiment of the present invention that includes: forming a gate line including a gate electrode on a substrate; forming a gate insulating layer on the gate line; forming a data line including a source electrode and a drain electrode facing the source electrode on the gate insulating layer; forming a partition defining a pixel area and having an opening region exposing the gate insulating layer on the gate electrode, the source electrode and the drain electrode on the gate line, and the data line and the drain electrode; forming a semiconductor in the opening region; forming a color filter in the pixel area defined by the partition; and forming a pixel electrode connected to the drain electrode on the color filter.
摘要翻译：本发明提供一种在液晶显示器中具有高性能的薄膜晶体管，以及根据本发明的示例性实施例的液晶显示器的制造方法，包括：在基板上形成包括栅电极的栅极线; 在栅极线上形成栅极绝缘层; 在所述栅极绝缘层上形成包括与所述源电极相对的源电极和漏电极的数据线; 形成限定像素区域并具有使栅极电极上的栅极绝缘层，栅极线上的源极电极和漏极电极以及数据线和漏极电极露出的开口区域; 在开口区域形成半导体; 在由分区限定的像素区域中形成滤色器; 以及在滤色器上形成连接到漏电极的像素电极。

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