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1. 发明申请

US20050116792A1 Microwave tunable device having coplanar waveguide structure 审中-公开
标题翻译：具有共面波导结构的微波可调谐器件
公开(公告)号：US20050116792A1
公开(公告)日：2005-06-02
申请号：US10817822
申请日：2004-04-06
申请人： Seung Moon , Han Ryu , Min Kwak , Young Kim , Sang Lee , Su Lee
发明人： Seung Moon , Han Ryu , Min Kwak , Young Kim , Sang Lee , Su Lee
IPC分类号： H01P5/04 , H01P1/18 , H01P3/00 , H01P3/08
CPC分类号： H01P3/003 , H01P1/181
摘要： Provided is a microwave tunable device having a coplanar waveguide structure, comprising a substrate, a ferroelectric/paraelectric thin film, a first transmission line, and second transmission lines, wherein a transmission line portion is formed with a constant width and an input/output portion is formed with a width larger than that of the transmission line portion in the first transmission line, and a transmission line portion is formed with a constant width and an input/output portion is formed with a narrower width than that of the transmission line portion in the second transmission line, whereby it is possible to minimize impedance difference with a connection line, a reflection loss, and an insertion loss, by controlling the width of the first transmission line and gap between the first and the second transmission lines, in the input/output portion.
摘要翻译：本发明提供一种具有共面波导结构的微波可调谐装置，包括基板，铁电/顺电薄膜，第一传输线和第二传输线，其中传输线部分形成为恒定宽度，输入/输出部分形成为具有比第一传输线中的传输线部分的宽度大的宽度，并且传输线部分形成为具有恒定的宽度，并且输入/输出部分形成为具有比传输线部分的宽度更窄的宽度第二传输线，通过在输入端控制第一传输线的宽度和第一和第二传输线之间的间隙，可以使与连接线的阻抗差，反射损耗和插入损耗最小化 /输出部分。

2. 发明申请

US20060125052A1 Lateral tunable capacitor and high frequency tunable device having the same 审中-公开
标题翻译：横向可调谐电容器和具有相同功能的高频可调谐器件
公开(公告)号：US20060125052A1
公开(公告)日：2006-06-15
申请号：US11210015
申请日：2005-08-22
申请人： Seung Moon , Han Ryu , Young Kim , Min Kwak , Su Lee , Kwang Kang
发明人： Seung Moon , Han Ryu , Young Kim , Min Kwak , Su Lee , Kwang Kang
IPC分类号： H01L29/93
CPC分类号： H01L28/82 , H01L27/0808
摘要： A lateral type tunable capacitor and a high frequency tunable device having the same are provided. The high frequency tunable device includes substrate; a signal line formed on the substrate; a plurality of tunable capacitors aligned on both sides of the signal line along the longitudinal direction of the signal line; an electrode disposed on the substrate for applying a DC voltage to the tunable capacitors. The tunable capacitor includes a dielectric layer formed on the substrate, and a first capacitor electrode and a second capacitor electrode formed on both sides of the dielectric layer on the substrate, and the first capacitor electrode, the dielectric layer, and the second capacitor electrode are aligned in parallel on the substrate.
摘要翻译：提供了一种横向型可调电容器和具有该横向型可调电容器的高频可调谐器件。高频可调谐装置包括基板; 形成在基板上的信号线; 多个可调谐电容器，沿信号线的纵向排列在信号线的两侧; 设置在所述基板上的用于向所述可调电容器施加DC电压的电极。可调谐电容器包括形成在基板上的电介质层，以及形成在基板上的电介质层两侧的第一电容电极和第二电容电极，第一电容电极，电介质层和第二电容器电极是在基板上平行排列。

3. 发明申请

US20060118843A1 Ferroelectric/paraelectric multilayer thin film, method of forming the same, and high frequency variable device using the same 失效
标题翻译：铁电/顺电多层薄膜，其形成方法和使用其的高频可变装置
公开(公告)号：US20060118843A1
公开(公告)日：2006-06-08
申请号：US11180744
申请日：2005-07-12
申请人： Su Lee , Seung Moon , Han Ryu , Min Kwak , Kwang Kang
发明人： Su Lee , Seung Moon , Han Ryu , Min Kwak , Kwang Kang
IPC分类号： H01L21/00 , H01L29/94
CPC分类号： H01L21/022 , H01G7/06 , H01L21/02197 , H01L21/0226 , H01L21/31691 , H01L28/56 , H01P1/181
摘要： A ferroelectric/paraelectric multilayer thin film having a high tuning rate of a dielectric constant and small dielectric loss to overcome limitations of a tuning rate of a dielectric constant and dielectric loss of a ferroelectric thin film, a method of forming the same, and a high frequency variable device having the ferroelectric/paraelectric multilayer thin film are provided. The ferroelectric/paraelectric multilayer thin film includes a perovskite ABO3 structure paraelectric seed layer formed on a substrate, and an epitaxial ferroelectric (BaxSr1-x)TiO3 thin film formed on the paraelectric seed layer. The high frequency variable device can realize a RF frequency/phase variable device having a high speed, low power consumption, and low prices and excellent microwaves characteristics.
摘要翻译：具有介电常数高的调谐率和小的介电损耗的铁电/直流多层薄膜，以克服介电常数的调谐率和铁电薄膜的介电损耗的限制，其形成方法和高提供具有铁电/顺电多层薄膜的高频可变器件。铁电/顺电多层薄膜包括在基板上形成的钙钛矿ABO 3结构顺电晶种层和外延铁电（Ba x Sr Sr 1-x < / SUB>）TiO 3薄膜形成在顺电种子层上。高频可变装置可以实现具有高速度，低功耗，低价格和优异的微波特性的RF频率/相位可变装置。

4. 发明申请

US20050128029A1 Ferroelectric epitaxial thin film for microwave tunable device and microwave tunable device using the same 审中-公开
标题翻译：用于微波可调谐器件的铁电外延薄膜和使用其的微波可调谐器件
公开(公告)号：US20050128029A1
公开(公告)日：2005-06-16
申请号：US10817852
申请日：2004-04-06
申请人： Su Lee , Seung Moon , Han Ryu , Min Kwak
发明人： Su Lee , Seung Moon , Han Ryu , Min Kwak
IPC分类号： H01L21/20 , H01P1/18
CPC分类号： H01P1/181
摘要： Provided are a ferroelectric epitaxial thin film for a microwave tunable device including a ferroelectric BaTiO3 seed layer and an epitaxial (Ba1-xSrx)TiO3 thin film, and a microwave tunable device using the same, whereby it is possible to improve the microwave response property of the microwave tunable device, and to enhance the quality of the wireless communication with ultra high speed, low electric power, low cost, and high sensitivity, by using the device of the present invention as an active antenna system, a satellite communication system, or a wireless sensor system,
摘要翻译：提供了一种用于微波可调器件的铁电外延薄膜，其包括铁电BaTiO 3种子层和外延（Ba 1-x Sr Sr x 3））TiO 3薄膜，以及使用其的微波可调谐装置，由此可以提高微波可调谐装置的微波响应特性，并且以超高的方式提高无线通信的质量通过使用本发明的装置作为有源天线系统，卫星通信系统或无线传感器系统，可以实现高速度，低功率，低成本和高灵敏度，

5. 发明申请

US20070132065A1 Paraelectric thin film structure for high frequency tunable device and high frequency tunable device with the same 审中-公开
标题翻译：用于高频可调谐器件的高电平薄膜结构和高频可调谐器件
公开(公告)号：US20070132065A1
公开(公告)日：2007-06-14
申请号：US11389761
申请日：2006-03-27
申请人： Su Jae Lee , Han Ryu , Seung Moon , Young Kim , Min Kwak , Kwang Kang
发明人： Su Jae Lee , Han Ryu , Seung Moon , Young Kim , Min Kwak , Kwang Kang
IPC分类号： H01L29/93 , H01L21/20
CPC分类号： H01G4/1227 , H01G4/33 , H01G7/06 , H01L21/31691 , H01L28/56
摘要： Provided are a paraelectric thin film structure and a high frequency tunable device with the paraelectric thin film structure. The paraelectric thin film structure has a large dielectric constant tuning rate and a low dielectric loss at a high frequency. The paraelectric thin film structure includes a perovskite ABO3 type paraelectric film formed on an oxide single crystal substrate. The paraelectric film is formed of a material selected from Ba(Zrx,Ti1-x)O3, Ba(Hfy,Ti1-y)O3, or Ba(Snz,Ti1-z)O3. Instead of the paraelectric film, the paraelectric thin film structure may include a compositionally graded paraelectric film having at least two paraelectric films formed of the selected material by varying the composition ratio x, y, or z. A high-frequency/phase tunable device employing the paraelectric thin film structure can have improved microwave characteristics and high-speed, low-power-consuming, low-cost characteristics.
摘要翻译：提供了顺电薄膜结构和具有顺电薄膜结构的高频可调谐器件。顺电薄膜结构在高频下具有大的介电常数调谐率和低的介电损耗。顺电薄膜结构包括在氧化物单晶衬底上形成的钙钛矿型ABO 3 N型顺电膜。所述顺电膜由选自Ba（Zr 1 x 1，Ti 1-x O）O 3 3，Ba（HfO 3） Y 1，Y 1，Y 3，Z 3，Z a，Z z， 3＆gt; 3＆lt; 3＆gt; 代替顺电膜，顺电薄膜结构可以包括通过改变组成比x，y或z而具有由所选择的材料形成的至少两个顺电膜的组成分级的副电介质膜。采用顺电薄膜结构的高频/相位可调谐装置可以具有改进的微波特性和高速，低功耗，低成本的特性。

6. 发明申请

US20050026070A1 Photoresist polymer and photoresist composition containing the same 有权
标题翻译：光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物
公开(公告)号：US20050026070A1
公开(公告)日：2005-02-03
申请号：US10719905
申请日：2003-11-21
申请人： Geun Lee , Cheol Bok , Seung Moon , Ki Shin , Jae Kim , Jung Kim , Sang Lee , Jae Kang
发明人： Geun Lee , Cheol Bok , Seung Moon , Ki Shin , Jae Kim , Jung Kim , Sang Lee , Jae Kang
IPC分类号： G03F7/004 , G03F7/039 , G03C1/76
CPC分类号： G03F7/0046 , G03F7/0045 , G03F7/0395 , G03F7/0397 , Y10S430/108
摘要： Photoresist polymers and photoresist compositions are disclosed. A photoresist polymer represented by Formula 1 and a photoresist composition containing the same have excellent etching resistance, thermal resistance and adhesive property, and high affinity to an developing solution, thereby improving LER (line edge roughness). wherein X1, X2, X3, R1, R2, R3, R4, R5, m, n, o, a, b, c, d and e are as defined in the description.
摘要翻译：公开了光致抗蚀剂聚合物和光致抗蚀剂组合物。由式1表示的光致抗蚀剂聚合物和含有它的光致抗蚀剂组合物具有优异的耐蚀刻性，耐热性和粘合性，并且对显影液具有高亲和性，从而提高LER（线边缘粗糙度）。其中X1，X2，X3，R1，R2，R3，R4，R5，m，n，o，a，b，c，d和e如说明书中所定义。

7. 发明申请

US20060263717A1 Photoresist coating composition and method for forming fine pattern using the same 有权
公开(公告)号：US20060263717A1
公开(公告)日：2006-11-23
申请号：US11298385
申请日：2005-12-08
申请人： Geun Lee , Seung Moon , Seung Lee
发明人： Geun Lee , Seung Moon , Seung Lee
IPC分类号： G03C1/00
CPC分类号： G03F7/40
摘要： A photoresist coating composition that includes a compound represented by Formula 1 and an aqueous solvent, and a method for forming a fine pattern by coating the composition on a photoresist pattern to effectively reduce a size of a photoresist contact hole and a space, which can be applied to all semiconductor processes.

8. 发明申请

US20060187173A1 Liquid crystal display and driving method thereof 审中-公开
公开(公告)号：US20060187173A1
公开(公告)日：2006-08-24
申请号：US11406728
申请日：2006-04-19
申请人： Seung Moon
发明人： Seung Moon
IPC分类号： G09G3/36
CPC分类号： G09G3/3655 , G09G3/3614 , G09G2320/0219 , G09G2320/0223 , G09G2320/0247
摘要： A liquid crystal display and method for driving the liquid crystal display are provided. The liquid crystal display includes a liquid crystal panel assembly including a plurality of gate lines, a plurality of data lines intersecting the gate lines, a plurality of switching elements connected to the gate lines and the data lines, a plurality of pixel electrodes connected to the switching elements, and a reference electrode opposing the pixel electrodes, a gate driver for applying gate signals to the gate lines to activate the switching elements, a data driver for applying data voltages that are be applied to the pixel electrodes to the data lines, and a reference voltage generator for generating first to third reference voltages to be respectively applied to first to third positions of the reference electrode, the first reference voltage being smaller than the third reference voltage and the third reference voltage being smaller than the second reference voltage, and the first position being closer to the gate driver than the third position and the third position being closer to the gate driver than the second position.

9. 发明申请

US20070042298A1 Method for manufacturing semiconductor device using immersion lithography process 审中-公开
标题翻译：使用浸渍光刻工艺制造半导体器件的方法
公开(公告)号：US20070042298A1
公开(公告)日：2007-02-22
申请号：US11481299
申请日：2006-07-05
申请人： Jae Jung , Sung Lee , Keun Ban , Cheol Bok , Seung Moon
发明人： Jae Jung , Sung Lee , Keun Ban , Cheol Bok , Seung Moon
IPC分类号： G03F7/26
CPC分类号： G03F7/70341
摘要： Disclosed is a method for manufacturing a semiconductor device using an immersion lithography process comprising rapidly accelerating the rotation of a wafer after exposing and before developing steps to remove an immersion lithography solution, thereby effectively reducing water mark defects.
摘要翻译：公开了一种使用浸没式光刻工艺制造半导体器件的方法，包括在曝光之后和在显影步骤之前快速加速晶片的旋转以去除浸没光刻溶液，从而有效地减少水痕缺陷。

10. 发明申请

US20060164350A1 Thin film transistor array panel and display device 有权
标题翻译：薄膜晶体管阵列面板及显示装置
公开(公告)号：US20060164350A1
公开(公告)日：2006-07-27
申请号：US11312680
申请日：2005-12-19
申请人： Sung-Man Kim , Seong-Young Lee , Beom-Jun Kim , Seung Moon , Hyang-Shik Kong
发明人： Sung-Man Kim , Seong-Young Lee , Beom-Jun Kim , Seung Moon , Hyang-Shik Kong
IPC分类号： G09G3/36
CPC分类号： G09G3/3614 , G02F1/1345 , G02F2201/40 , G09G3/3648 , G09G2300/0426 , G09G2300/0443
摘要： Disclosed is a thin film transistor array panel. The panel includes a plurality of pixels arranged in the form of a matrix each with a pixel electrode and a switching element connected to the pixel electrode, and a plurality of gate lines connected to the switching elements and extending in the row direction. A pair of the gate lines are connected to pixels in each pixel row. A plurality of data lines are connected to the switching elements, and elongated in the column direction. Each data line is provided between two columns of the pixels. The respective data lines are horizontally bent between the two adjacent gate lines, and vertically extend between the two pixel rows.
摘要翻译：公开了一种薄膜晶体管阵列面板。面板包括以矩阵形式布置的多个像素，每个像素连接有像素电极和连接到像素电极的开关元件，以及连接到开关元件并沿行方向延伸的多条栅极线。一对栅极线连接到每个像素行中的像素。多个数据线连接到开关元件，并且在列方向上延伸。每个数据线都在两列像素之间提供。相应的数据线在两个相邻的栅极线之间水平弯曲，并且在两个像素行之间垂直延伸。

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