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1. 发明申请

US20080132052A1 METHOD OF FABRICATING ELECTRONIC DEVICE USING NANOWIRES 有权
标题翻译：使用纳米级制造电子器件的方法
公开(公告)号：US20080132052A1
公开(公告)日：2008-06-05
申请号：US11947139
申请日：2007-11-29
申请人： Seung Eon MOON , Eun Kyoung KIM , Hong Yeol LEE , Jong Hyurk PARK , Kang Ho PARK , Jong Dae KIM , So Jeong PARK , Gyu Tae KIM
发明人： Seung Eon MOON , Eun Kyoung KIM , Hong Yeol LEE , Jong Hyurk PARK , Kang Ho PARK , Jong Dae KIM , So Jeong PARK , Gyu Tae KIM
IPC分类号： H01L21/44
CPC分类号： H01L21/76892 , H01L2221/1094
摘要： A method of fabricating an electronic device using nanowires, minimizing the number of E-beam processing steps and thus improving a yield, includes the steps of: forming electrodes on a substrate; depositing a plurality of nanowires on the substrate including the electrodes; capturing an image of the substrate including the nanowires and the electrodes; drawing virtual connection lines for connecting the nanowires with the electrodes on the image using an electrode pattern simulated through a computer program, after capturing the image; coating an E-beam photoresist on the substrate; removing the photoresist from regions corresponding to the virtual connection lines and the electrode pattern using E-beam lithography; depositing a metal layer on the substrate after removing the photoresist from the regions of the virtual connection lines; and removing remaining photoresist from the substrate using a lift-off process. It is possible to reduce the time and cost associated with fabricating electronic devices with nanowires because the number of E-beam processing steps remarkably decreases compared to the conventional method that fabricates electronic devices only by means of the E-beam lithography processes. After calling upon an image of the substrate having nanowires on a computer program, the electronic devices are fabricated with reference to the substrate image, thus enhancing the product yield.
摘要翻译：使用纳米线制造电子器件的方法，使电子束处理步骤的数量最小化并因此提高产量，包括以下步骤：在衬底上形成电极; 在包括电极的基板上沉积多个纳米线; 捕获包括纳米线和电极的衬底的图像; 绘制虚拟连接线，用于在捕获图像之后，使用通过计算机程序模拟的电极图案将纳米线与图像上的电极连接; 在基板上涂覆电子束光致抗蚀剂; 使用电子束光刻从与虚拟连接线对应的区域和电极图案中去除光致抗蚀剂; 在从虚拟连接线的区域去除光致抗蚀剂之后，在基板上沉积金属层; 以及使用剥离工艺从衬底去除剩余的光致抗蚀剂。与仅通过电子束光刻工艺制造电子器件的常规方法相比，电子束处理步骤的数量显着降低，可以减少与制造具有纳米线的电子器件相关联的时间和成本。在计算机程序上调用具有纳米线的衬底的图像之后，参考衬底图像制造电子器件，从而提高产品产量。

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