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    • 5. 发明授权
    • Integrated circuit devices with power supply detection circuitry
    • 具有电源检测电路的集成电路器件
    • US06737885B1
    • 2004-05-18
    • US10327284
    • 2002-12-20
    • Sergey Y. ShumarayevThomas H. White
    • Sergey Y. ShumarayevThomas H. White
    • H03K19003
    • H03K17/22G06F1/24G06F1/28
    • Integrated circuit devices are provided that include power detection circuits that indicate whether power supplies have reached functional voltage levels. The power detection circuits include latches coupled to power supplies that can detect whether all the power supplies have reached functional voltage levels, logic circuits to provide appropriate output signals, and well bias circuits that supply current to the power detection circuits. Well bias circuits provide current from first power supplies to reach functional voltage levels so that indication may be provided from the power detection circuit without requiring functional voltage levels of all power supplies. Outputs from power detection circuits can be combined with control signals, for various applications. Applications include holding an integrated circuit device in reset until power supplies have reached functional voltage levels.
    • 提供集成电路装置,其包括指示电源是否达到功能电压电平的功率检测电路。 功率检测电路包括耦合到电源的锁存器,其可以检测所有电源是否已经达到功能电压电平,逻辑电路以提供适当的输出信号,以及向电力检测电路提供电流的阱偏置电路。 良好的偏置电路提供来自第一电源的电流以达到功能电压电平,使得可以从功率检测电路提供指示,而不需要所有电源的功能电压电平。 来自功率检测电路的输出可以与控制信号组合,用于各种应用。 应用包括将集成电路器件置于复位状态,直到电源达到功能电压电平。
    • 6. 发明授权
    • Integrated circuit devices with power supply detection circuitry
    • 具有电源检测电路的集成电路器件
    • US06549032B1
    • 2003-04-15
    • US09935186
    • 2001-08-22
    • Sergey Y. ShumarayevThomas H. White
    • Sergey Y. ShumarayevThomas H. White
    • H03K19003
    • H03K17/22G06F1/24G06F1/28
    • Integrated circuit devices are provided that include power detection circuits that indicate whether power supplies have reached functional voltage levels. The power detection circuits include latches coupled to power supplies that can detect whether all the power supplies have reached functional voltage levels, logic circuits to provide appropriate output signals, and well bias circuits that supply current to the power detection circuits. Well bias circuits provide current from first power supplies to reach functional voltage levels so that indication may be provided from the power detection circuit without requiring functional voltage levels of all power supplies. Outputs from power detection circuits can be combined with control signals, for various applications. Applications include holding an integrated circuit device in reset until power supplies have reached functional voltage levels.
    • 提供集成电路装置,其包括指示电源是否达到功能电压电平的功率检测电路。 功率检测电路包括耦合到电源的锁存器,其可以检测所有电源是否已经达到功能电压电平,逻辑电路以提供适当的输出信号,以及向电力检测电路提供电流的阱偏置电路。 良好的偏置电路提供来自第一电源的电流以达到功能电压电平,使得可以从功率检测电路提供指示,而不需要所有电源的功能电压电平。 来自功率检测电路的输出可以与控制信号组合,用于各种应用。 应用包括将集成电路器件置于复位状态,直到电源达到功能电压电平。
    • 7. 发明授权
    • Control pin for specifying integrated circuit voltage levels
    • 用于指定集成电路电压电平的控制引脚
    • US06515507B1
    • 2003-02-04
    • US09607569
    • 2000-06-29
    • Rakesh H. PatelThomas H. White
    • Rakesh H. PatelThomas H. White
    • G06F738
    • G11C16/30G11C5/147G11C16/20H03K3/011H03K3/0315
    • An integrated circuit has one or more external control pins to control and indicate which of two or more different VCC or other voltage levels will be used. The control pin receives a logic signal, high or low, and draws zero static power. A user can use the integrated circuit with two or more VCC voltage levels by indicating which voltage level at the control pins. In a specific embodiment, the integrated circuit has nonvolatile memory cells such as EEPROM or Flash cells that a configurable and reconfigurable using on-chip programming circuitry. The programming circuitry may generate and use superhigh or high voltages, higher than the VCC voltage.
    • 集成电路具有一个或多个外部控制引脚,用于控制并指示将使用两个或多个不同VCC或其他电压电平中的哪一个。 控制引脚接收高或低的逻辑信号,并绘制零静态功率。 用户可以通过指示控制引脚上的哪个电压电平,使用具有两个或多个VCC电压电平的集成电路。 在具体实施例中,集成电路具有非易失性存储单元,例如EEPROM或闪存单元,其是使用片上编程电路的可配置和可重新配置的。 编程电路可以产生和使用高于VCC电压的超高电压或高电压。
    • 9. 发明授权
    • Memory elements with soft error upset immunity
    • 内存元件具有软错误的不安定性
    • US08432724B2
    • 2013-04-30
    • US12753809
    • 2010-04-02
    • Thomas H. White
    • Thomas H. White
    • G11C11/00
    • G11C7/02G11C11/4125G11C11/419
    • Integrated circuits with memory cells are provided. A memory cell may have four inverter-like circuits connected in a ring configuration and four corresponding storage nodes. The four inverter-like circuits may form a storage portion of the memory cell. Some of the inverter-like circuits may have tri-state transistors in pull-up and pull-down paths. The tri-state transistors may be controlled by address signals. Address and access transistors may be coupled between some of the storages nodes and a data line. The address and access transistors may be used to read and write into the memory cell. During write operations, the address signals may be asserted to turn off the tri-state transistors and eliminate contention current from the cell. During read and normal operations, the address signals may be deasserted to allow the inverter-like circuits to hold the current state of the cell while providing soft error upset immunity.
    • 提供具有存储单元的集成电路。 存储单元可以具有以环形配置连接的四个逆变器状电路和四个对应的存储节点。 四个逆变器状电路可以形成存储单元的存储部分。 一些逆变器状电路可以在上拉和下拉路径中具有三态晶体管。 三态晶体管可以由地址信号控制。 地址和存取晶体管可以耦合在一些存储节点和数据线之间。 地址和存取晶体管可用于读写存储单元。 在写操作期间,可以断言地址信号以关闭三态晶体管并消除来自该单元的竞争电流。 在读取和正常操作期间,可以将地址信号置为无效,以允许类似逆变器的电路保持电池的当前状态,同时提供软错误不耐受性。