专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09645484B2 Reflective masks for use in extreme ultraviolet lithography apparatus and methods of manufacturing the same 有权
公开(公告)号：US09645484B2
公开(公告)日：2017-05-09
申请号：US14827440
申请日：2015-08-17
申请人： Seong-sue Kim , Hwan-seok Seo , In-sung Kim , Tae-geun Kim
发明人： Seong-sue Kim , Hwan-seok Seo , In-sung Kim , Tae-geun Kim
IPC分类号： G03F1/24 , G03F1/22
CPC分类号： G03F1/24
摘要： Reflective masks, and methods of manufacturing the same, include a reflective multi-layer on a mask substrate, a plurality of support patterns spaced apart from one another in the main trench. The plurality of support patterns are in a main trench of the reflective multi-layer. The plurality of support patterns correspond to areas of the reflective mask not transferred onto an exposure target substrate. The support patterns partition the main trench to form a plurality of auxiliary trenches. The reflective mask further includes a light absorption pattern including a plurality of auxiliary light absorption patterns in the auxiliary trenches.

2. 发明授权

US06492701B1 Semiconductor device having anti-reflective cap and spacer, method of manufacturing the same, and method of manufacturing photoresist pattern using the same 失效
标题翻译：具有抗反射盖和间隔物的半导体器件及其制造方法以及使用其制造光刻胶图案的方法
公开(公告)号：US06492701B1
公开(公告)日：2002-12-10
申请号：US09324072
申请日：1999-06-01
申请人： In-sung Kim , Jung-hyeon Lee , Han-ku Cho
发明人： In-sung Kim , Jung-hyeon Lee , Han-ku Cho
IPC分类号： H01L310232
CPC分类号： H01L21/0276 , H01L21/28044 , H01L21/28061 , H01L21/76802
摘要： A semiconductor device including an anti-reflective cap and spacer, a method of manufacturing the same, and a method of forming a photoresist pattern using the same are provided. The semiconductor device according to the present invention includes an anti-reflective cap and an anti-reflective spacer on an upper surface and side walls of a reflective pattern formed on the semiconductor substrate. Therefore, the deformation of the photoresist pattern by the light reflected from the reflective pattern is minimized during a photolithography process.
摘要翻译：提供了包括抗反射盖和间隔物的半导体器件，其制造方法和使用其形成光致抗蚀剂图案的方法。根据本发明的半导体器件包括在半导体衬底上形成的反射图案的上表面上的抗反射盖和抗反射隔板。因此，在光刻工艺中，由反射图案反射的光使光刻胶图案的变形最小化。

3. 发明授权

US07300746B2 Photomask for forming small contact hole array and methods of fabricating and using the same 有权
标题翻译：用于形成小接触孔阵列的光掩模及其制造和使用方法
公开(公告)号：US07300746B2
公开(公告)日：2007-11-27
申请号：US11328788
申请日：2006-01-10
申请人： In-sung Kim
发明人： In-sung Kim
IPC分类号： G03C5/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , G03F1/34
摘要： Photomasks that are used to form a fine contact hole array, a method of fabricating the photomask, and use of the photomask. The photomask includes a transparent substrate; a plurality of line-type opaque patterns being formed on the transparent substrate, for defining floodlighting portions for forming patterns; and phase-shifting regions being arranged on the transparent substrate between the opaque patterns at predetermined intervals, the phase-shifting regions defining floodlighting portions for contact holes. A fine and dense contact hole array can be easily formed using the photomask together with a customized illumination. Therefore, a fine contact hole of a good quality can be formed directly on a photoresist using the photomask without additional processes.
摘要翻译：用于形成精细接触孔阵列的光掩模，制造光掩模的方法和光掩模的使用。光掩模包括透明基板; 多个线型不透明图案形成在透明基板上，用于限定用于形成图案的泛光部分; 并且相移区域以预定间隔布置在透明基板之间的不透明图案之间，相移区域限定用于接触孔的泛光部分。使用光掩模和定制照明可以容易地形成精细和致密的接触孔阵列。因此，可以使用光掩模直接在光致抗蚀剂上形成质量好的细小接触孔，而无需额外的工艺。

4. 发明申请

US20060110684A1 Photomask for forming small contact hole array and methods of fabricating and using the same 有权
标题翻译：用于形成小接触孔阵列的光掩模及其制造和使用方法
公开(公告)号：US20060110684A1
公开(公告)日：2006-05-25
申请号：US11328788
申请日：2006-01-10
申请人： In-sung Kim
发明人： In-sung Kim
IPC分类号： G03C5/00 , G03F1/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , G03F1/34
摘要： Photomasks that are used to form a fine contact hole array, a method of fabricating the photomask, and use of the photomask. The photomask includes a transparent substrate; a plurality of line-type opaque patterns being formed on the transparent substrate, for defining floodlighting portions for forming patterns; and phase-shifting regions being arranged on the transparent substrate between the opaque patterns at predetermined intervals, the phase-shifting regions defining floodlighting portions for contact holes. A fine and dense contact hole array can be easily formed using the photomask together with a customized illumination. Therefore, a fine contact hole of a good quality can be formed directly on a photoresist using the photomask without additional processes.
摘要翻译：用于形成精细接触孔阵列的光掩模，制造光掩模的方法和光掩模的使用。光掩模包括透明基板; 多个线型不透明图案形成在透明基板上，用于限定用于形成图案的泛光部分; 并且相移区域以预定间隔布置在透明基板之间的不透明图案之间，相移区域限定用于接触孔的泛光部分。使用光掩模和定制照明可以容易地形成精细和致密的接触孔阵列。因此，可以使用光掩模直接在光致抗蚀剂上形成质量好的细小接触孔，而无需额外的工艺。

5. 发明申请

US20050164100A1 Phase shifting mask for manufacturing semiconductor device and method of fabricating the same 有权
标题翻译：用于制造半导体器件的相移掩模及其制造方法
公开(公告)号：US20050164100A1
公开(公告)日：2005-07-28
申请号：US11084327
申请日：2005-03-18
申请人： In-sung Kim , Jung-hyeon Lee , Sung-gon Jung
发明人： In-sung Kim , Jung-hyeon Lee , Sung-gon Jung
IPC分类号： G03F1/00 , G03F1/29 , G03F1/32 , G03F1/36 , G03F1/54 , G03F1/68 , G03F1/70 , H01L21/027 , G03F9/00 , G03C5/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A phase shifting mask (PSM) for manufacturing a semiconductor device and a method of fabricating the same includes a transparent substrate, a main pattern formed on the transparent substrate and comprising a first phase shifting layer having a first optical transmittance greater than 0, and at least one assistant pattern formed on the transparent substrate proximal to the main pattern for phase-shifting by the same degree as the main pattern and having a second optical transmittance, which is less than the first optical transmittance.
摘要翻译：用于制造半导体器件的相移掩模（PSM）及其制造方法包括：透明基板，形成在透明基板上的主图案，其包括第一透光率大于0的第一相移层，以及第至少一个辅助图案形成在靠近主图案的透明基板上，用于与主图案相同程度的相移，并具有小于第一光透射率的第二光透射率。

6. 发明授权

US07473497B2 Phase shifting mask for manufacturing semiconductor device and method of fabricating the same 有权
公开(公告)号：US07473497B2
公开(公告)日：2009-01-06
申请号：US11084327
申请日：2005-03-18
申请人： In-sung Kim , Jung-hyeon Lee , Sung-gon Jung
发明人： In-sung Kim , Jung-hyeon Lee , Sung-gon Jung
IPC分类号： G03F1/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A phase shifting mask (PSM) for manufacturing a semiconductor device and a method of fabricating the same includes a transparent substrate, a main pattern formed on the transparent substrate and comprising a first phase shifting layer having a first optical transmittance greater than 0, and at least one assistant pattern formed on the transparent substrate proximal to the main pattern for phase-shifting by the same degree as the main pattern and having a second optical transmittance, which is less than the first optical transmittance.

7. 发明授权

US07022438B2 Photomask for forming small contact hole array and methods of fabricating and using the same 有权
公开(公告)号：US07022438B2
公开(公告)日：2006-04-04
申请号：US10392590
申请日：2003-03-20
申请人： In-sung Kim
发明人： In-sung Kim
IPC分类号： G03F9/00
CPC分类号： G03F1/26 , G03F1/30 , G03F1/32 , G03F1/34
摘要： Photomasks that are used to form a fine contact hole array, a method of fabricating the photomask, and use of the photomask. The photomask includes a transparent substrate; a plurality of line-type opaque patterns being formed on the transparent substrate, for defining floodlighting portions for forming patterns; and phase-shifting regions being arranged on the transparent substrate between the opaque patterns at predetermined intervals, the phase-shifting regions defining floodlighting portions for contact holes. A fine and dense contact hole array can be easily formed using the photomask together with a customized illumination. Therefore, a fine contact hole of a good quality can be formed directly on a photoresist using the photomask without additional processes.

8. 发明授权

US06893779B2 Phase shifting mask for manufacturing semiconductor device and method of fabricating the same 有权
公开(公告)号：US06893779B2
公开(公告)日：2005-05-17
申请号：US10008064
申请日：2001-11-05
申请人： In-sung Kim , Jung-hyeon Lee , Sung-gon Jung
发明人： In-sung Kim , Jung-hyeon Lee , Sung-gon Jung
IPC分类号： G03F1/00 , G03F1/29 , G03F1/32 , G03F1/36 , G03F1/54 , G03F1/68 , G03F1/70 , H01L21/027 , G03F9/00
CPC分类号： G03F1/32 , G03F1/36
摘要： A phase shifting mask (PSM) for manufacturing a semiconductor device and a method of fabricating the same includes a transparent substrate, a main pattern formed on the transparent substrate and comprising a first phase shifting layer having a first optical transmittance greater than 0, and at least one assistant pattern formed on the transparent substrate proximal to the main pattern for phase-shifting by the same degree as the main pattern and having a second optical transmittance, which is less than the first optical transmittance.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式