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1. 发明申请

US20120064692A1 METHODS OF MANUFACTURING A MEMORY DEVICE HAVING A CARBON NANOTUBE 审中-公开
标题翻译：制造具有碳纳米管的存储器件的方法
公开(公告)号：US20120064692A1
公开(公告)日：2012-03-15
申请号：US13235079
申请日：2011-09-16
申请人： Seong-Ho MOON , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
发明人： Seong-Ho MOON , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
IPC分类号： H01L21/20 , B82Y40/00
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , H01L51/0048 , H01L51/057 , H01L51/0579
摘要： A method of manufacturing a memory device having a carbon nanotube can be provided by forming a lower electrode on a substrate and forming an insulating interlayer on the lower electrode. An upper electrode including a diode can be formed on the insulating interlayer, where the upper electrode can have a first void exposing a sidewall of the diode and a portion of the insulating interlayer. A portion of the insulating interlayer can be partially removed to form an insulating interlayer pattern having a second void that exposes a portion of the lower electrode, where the second void can be connected with the first void. A carbon nanotube wiring can be formed from the lower electrode through the second and first voids, where the carbon nanotube wiring may be capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode.
摘要翻译：可以通过在基板上形成下电极并在下电极上形成绝缘中间层来提供制造具有碳纳米管的存储器件的方法。可以在绝缘中间层上形成包括二极管的上电极，其中上电极可以具有暴露二极管的侧壁和绝缘中间层的一部分的第一空隙。绝缘中间层的一部分可以被部分去除以形成具有暴露下部电极的一部分的第二空隙的绝缘层间图案，其中第二空隙可与第一空隙连接。碳纳米管布线可以由下电极通过第二和第一空隙形成，其中碳纳米管布线可以通过施加到下电极的电压与上电极的二极管电连接。

2. 发明授权

US08039919B2 Memory devices having a carbon nanotube 有权
标题翻译：具有碳纳米管的存储器件
公开(公告)号：US08039919B2
公开(公告)日：2011-10-18
申请号：US12469295
申请日：2009-05-20
申请人： Seong-Ho Moon , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
发明人： Seong-Ho Moon , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
IPC分类号： H01L29/40
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , H01L51/0048 , H01L51/057 , H01L51/0579
摘要： In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.
摘要翻译：在具有碳纳米管的存储器件及其制造方法中，存储器件包括下电极，具有暴露其二极管侧壁的第一空隙的上电极，绝缘层间图案，具有暴露部分下电极和上电极之间的下电极，以及能够通过施加到下电极的电压与上电极的二极管电连接的碳纳米管布线。存储器件可以减少横条存储器中的漏电流的产生。

3. 发明申请

US20090289322A1 MEMORY DEVICES HAVING A CARBON NANOTUBE 有权
标题翻译：具有碳纳米管的存储器件
公开(公告)号：US20090289322A1
公开(公告)日：2009-11-26
申请号：US12469295
申请日：2009-05-20
申请人： Seong-Ho Moon , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
发明人： Seong-Ho Moon , Hong-Sik Yoon , Subramanya Mayya , Sun-Woo Lee , Dong-Woo Kim , Xiaofeng Wang
IPC分类号： H01L29/872 , H01L23/52
CPC分类号： H01L27/1021 , B82Y10/00 , G11C13/025 , G11C23/00 , G11C2213/16 , H01L51/0048 , H01L51/057 , H01L51/0579
摘要： In a memory device having a carbon nanotube and a method of manufacturing the same, the memory device includes a lower electrode, an upper electrode having a first void exposing a sidewall of a diode therein, an insulating interlayer pattern having a second void exposing a portion of the lower electrode between the lower electrode and the upper electrode, and a carbon nanotube wiring capable of being electrically connected with the diode of the upper electrode by a voltage applied to the lower electrode. The memory device may reduce generation of a leakage current in a cross-bar memory.
摘要翻译：在具有碳纳米管的存储器件及其制造方法中，存储器件包括下电极，具有暴露其二极管侧壁的第一空隙的上电极，绝缘层间图案，具有暴露部分下电极和上电极之间的下电极，以及能够通过施加到下电极的电压与上电极的二极管电连接的碳纳米管布线。存储器件可以减少横条存储器中的漏电流的产生。

4. 发明授权

US08299454B2 Nano line structures in microelectronic devices 失效
标题翻译：微电子器件中的纳米线结构
公开(公告)号：US08299454B2
公开(公告)日：2012-10-30
申请号：US12961883
申请日：2010-12-07
申请人： ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
发明人： ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
IPC分类号： H01L29/06
CPC分类号： H01L51/0049 , B82Y10/00 , H01L29/0665 , H01L29/0673
摘要： A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.
摘要翻译：形成微电子器件的方法包括在衬底上形成具有相对侧壁及其表面的沟槽结构，以限定纳米线布置区域。纳米线排列区域具有预定宽度和大于宽度的预定长度。在纳米线布置区域中形成至少一条纳米线，其基本上沿着其长度延伸并耦合到凹槽结构的表面以限定纳米线结构。还讨论了相关设备。

5. 发明授权

US07863138B2 Methods of forming nano line structures in microelectronic devices 失效
标题翻译：在微电子器件中形成纳米线结构的方法
公开(公告)号：US07863138B2
公开(公告)日：2011-01-04
申请号：US11853313
申请日：2007-09-11
申请人： ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
发明人： ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
IPC分类号： H01L21/8236
CPC分类号： H01L51/0049 , B82Y10/00 , H01L29/0665 , H01L29/0673
摘要： A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.
摘要翻译：形成微电子器件的方法包括在衬底上形成具有相对侧壁及其表面的沟槽结构，以限定纳米线布置区域。纳米线排列区域具有预定宽度和大于宽度的预定长度。在纳米线布置区域中形成至少一条纳米线，其基本上沿着其长度延伸并耦合到凹槽结构的表面以限定纳米线结构。还讨论了相关设备。

6. 发明申请

US20080169531A1 METHODS OF FORMING NANO LINE STRUCTURES IN MICROELECTRONIC DEVICES AND RELATED DEVICES 失效
标题翻译：在微电子器件中形成纳米线结构的方法及相关器件
公开(公告)号：US20080169531A1
公开(公告)日：2008-07-17
申请号：US11853313
申请日：2007-09-11
申请人： ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
发明人： ZongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
IPC分类号： H01L29/24 , H01L21/8236
CPC分类号： H01L51/0049 , B82Y10/00 , H01L29/0665 , H01L29/0673
摘要： A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.
摘要翻译：形成微电子器件的方法包括在衬底上形成具有相对侧壁及其表面的沟槽结构，以限定纳米线布置区域。纳米线排列区域具有预定宽度和大于宽度的预定长度。在纳米线布置区域中形成至少一条纳米线，其基本上沿着其长度延伸并耦合到凹槽结构的表面以限定纳米线结构。还讨论了相关设备。

7. 发明申请

US20110073841A1 NANO LINE STRUCTURES IN MICROELECTRONIC DEVICES 失效
标题翻译：微电子器件中的纳米线结构
公开(公告)号：US20110073841A1
公开(公告)日：2011-03-31
申请号：US12961883
申请日：2010-12-07
申请人： ZhongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
发明人： ZhongLiang Huo , Subramanya Mayya , Xiaofeng Wang , In-Seok Yeo
IPC分类号： H01L29/78 , H01L29/66 , B82Y99/00
CPC分类号： H01L51/0049 , B82Y10/00 , H01L29/0665 , H01L29/0673
摘要： A method of forming a microelectronic device includes forming a groove structure having opposing sidewalls and a surface therebetween on a substrate to define a nano line arrangement region. The nano line arrangement region has a predetermined width and a predetermined length greater than the width. At least one nano line is formed in the nano line arrangement region extending substantially along the length thereof and coupled to the surface of the groove structure to define a nano line structure. Related devices are also discussed.
摘要翻译：形成微电子器件的方法包括在衬底上形成具有相对侧壁及其表面的沟槽结构，以限定纳米线布置区域。纳米线排列区域具有预定宽度和大于宽度的预定长度。在纳米线布置区域中形成至少一条纳米线，其基本上沿着其长度延伸并耦合到凹槽结构的表面以限定纳米线结构。还讨论了相关设备。

8. 发明申请

US20100136226A1 Methods of Forming Carbon Nanotubes 有权
标题翻译：形成碳纳米管的方法
公开(公告)号：US20100136226A1
公开(公告)日：2010-06-03
申请号：US12625896
申请日：2009-11-25
申请人： Xiaofeng Wang , Hong-Sik Yoon , In-Seok Yeo
发明人： Xiaofeng Wang , Hong-Sik Yoon , In-Seok Yeo
IPC分类号： B05D5/12
CPC分类号： C23C16/0281 , B82Y10/00 , B82Y30/00 , B82Y40/00 , C01B32/162 , C23C16/26 , H01L51/0002 , H01L51/0048
摘要： Methods of forming carbon nanotubes include forming a catalytic metal layer on a sidewall of an electrically conductive region, such as a metal or metal nitride pattern. A plurality of carbon nanotubes are grown from the catalytic metal layer. These carbon nanotubes can be grown from a sidewall of the catalytic metal layer. The plurality of carbon nanotubes are then exposed to an organic solvent. This step of exposing the carbon nanotubes to the organic solvent may be preceded by a step of applying centrifugal forces to the plurality of carbon nanotubes. Alternatively, the exposing step may include applying a centrifugal force to the plurality of carbon nanotubes while simultaneously exposing the plurality of carbon nanotubes to an organic solvent.
摘要翻译：形成碳纳米管的方法包括在诸如金属或金属氮化物图案的导电区域的侧壁上形成催化金属层。从催化金属层生长多个碳纳米管。这些碳纳米管可以从催化金属层的侧壁生长。然后将多个碳纳米管暴露于有机溶剂。之前将碳纳米管暴露于有机溶剂的步骤之前可以将离心力施加到多个碳纳米管。或者，曝光步骤可以包括向多个碳纳米管施加离心力，同时将多个碳纳米管暴露于有机溶剂。

9. 发明申请

US20130291089A1 DATA COMMUNICATION METHOD AND DEVICE AND DATA INTERACTION SYSTEM BASED ON BROWSER 审中-公开
标题翻译：数据通信方法和基于浏览器的设备和数据交互系统
公开(公告)号：US20130291089A1
公开(公告)日：2013-10-31
申请号：US13976523
申请日：2011-08-11
申请人： Xiaofeng Wang , Jiong Tang
发明人： Xiaofeng Wang , Jiong Tang
IPC分类号： G06F21/60
CPC分类号： G06F21/606 , H04L63/0428 , H04L63/168 , H04L67/02 , H04L67/2828 , H04L67/289 , H04L69/22
摘要： The present invention, relating to the field of network technologies, discloses a data communication method and device and data interaction system based on browser. The method includes: receiving request data input by a user by using a browser; generating a request data packet using the request data according to a preset private protocol; and sending the request data packet to a server. The client includes: a receiving unit, a generating unit, and a sending unit. The data interaction system includes a client and a server. According to the present invention, a request data packet is generated for request data according to a preset private protocol, and then sent to a server. In addition, during the data communication process, other protocol-specific fields in HTTP are not carried, thereby reducing data transmission amount, saving bandwidths, and improving data transmission efficiency.
摘要翻译：本发明涉及网络技术领域，公开了一种基于浏览器的数据通信方法和设备与数据交互系统。该方法包括：通过浏览器接收用户输入的请求数据; 根据预设的专用协议，使用所述请求数据生成请求数据包; 并将请求数据包发送到服务器。客户端包括：接收单元，生成单元和发送单元。数据交互系统包括客户端和服务器。根据本发明，根据预设的专用协议为请求数据生成请求数据分组，然后发送给服务器。另外，在数据通信过程中，不携带HTTP中的其他特定于协议的字段，从而降低数据传输量，节省带宽，提高数据传输效率。

10. 发明授权

US08277429B2 Absorbent product having a miniature model 有权
标题翻译：具有微型型号的吸收性产品
公开(公告)号：US08277429B2
公开(公告)日：2012-10-02
申请号：US12469929
申请日：2009-05-21
申请人： Tanguy Yann Pellen , Jing Zhang , Xiaofeng Wang
发明人： Tanguy Yann Pellen , Jing Zhang , Xiaofeng Wang
IPC分类号： A61F13/15 , A61L15/00
CPC分类号： A61F13/15 , A61F13/4756 , A61F13/51305 , A61F13/551 , B65D5/4212 , B65D75/54 , B65D2201/00 , B65D2203/00
摘要： Absorbent product including a package, at least one absorbent article and a miniature model.
摘要翻译：吸收产品包括包装，至少一种吸收制品和微型模型。

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