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    • 1. 发明授权
    • Composition for organic polymer gate insulating layer and organic thin film transistor using the same
    • 有机高分子栅极绝缘层的组成和使用其的有机薄膜晶体管
    • US07741635B2
    • 2010-06-22
    • US12182577
    • 2008-07-30
    • Seong Hyun KimSang Chul LimGi Heon KimJi Ho YoukTae Gon Kim
    • Seong Hyun KimSang Chul LimGi Heon KimJi Ho YoukTae Gon Kim
    • H01L35/24H01L51/00
    • H01L51/052H01L51/0545
    • Provided are a composition for an organic polymer gate insulating layer and an Organic Thin Film Transistor (OTFT) using the same. The composition includes an insulating organic polymer including at least one selected from the group consisting of polymethylmethacrylate (PMMA), polyvinylalcohol (PVA), polyvinylpyrrolidone (PVP), poly(vinyl phenol) (PVPh) and a copolymer thereof, a crosslinking monomer having two or more double bonds, and a photoinitiator. The OTFT includes a gate insulating layer of a semi-interpenetrating polymer network formed of the composition. The composition for a photoreactive organic polymer gate insulating layer has a photochemical characteristic that enables micropatterning, and can be formed into a layer having excellent chemical resistance, thermal resistance, surface characteristics and electrical characteristics.
    • 提供一种有机高分子栅极绝缘层和使用其的有机薄膜晶体管(OTFT)的组合物。 该组合物包括绝缘有机聚合物,其包括选自聚甲基丙烯酸甲酯(PMMA),聚乙烯醇(PVA),聚乙烯吡咯烷酮(PVP),聚(乙烯基苯酚)(PVPh)及其共聚物中的至少一种,具有两个 或更多双键,以及光引发剂。 OTFT包括由该组合物形成的半互穿聚合物网络的栅极绝缘层。 光反应性有机聚合物栅极绝缘层的组合物具有能够进行微图案化的光化学特性,并且可以形成为具有优异的耐化学性,耐热性,表面特性和电特性的层。
    • 6. 发明申请
    • POLYMER, METHOD FOR PRODUCING THE SAME, AND RESIST COMPOSITION CONTAINING THE SAME
    • 聚合物,其制造方法和含有该组合物的耐腐蚀组合物
    • US20120165499A1
    • 2012-06-28
    • US13330971
    • 2011-12-20
    • Jung-Hoon OHJoon Hee HanTae Gon KimHyun Sang Joo
    • Jung-Hoon OHJoon Hee HanTae Gon KimHyun Sang Joo
    • C08G63/66
    • C08G63/668G03F7/0392G03F7/0395G03F7/2039
    • Provided is a copolymer containing a repeating unit represented by the following formula (1): wherein R1 represents an alkanediyl group, a heteroalkanediyl group, a cycloalkanediyl group, a heterocycloalkanediyl group, an arylene group, a heteroarylene group, or an alkylarylene group; R2 represents a hydrogen atom, an alkyl group, a heteroalkyl group, a cycloalkyl group, a heterocycloalkyl group, an aryl group, a heteroaryl group, an alkoxy group, or an alkylalkoxy group; R3, R4, R5 and R6 each independently represent a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n1 represents an integer from 0 to 10; and n2 represents an integer from 0 to 10.The copolymer, when incorporated into a resist composition, can provide a satisfactory resist pattern with high sensitivity, high resolution, high etching resistance and a reduced amount of outgas.
    • 提供含有下式(1)表示的重复单元的共聚物:其中R1表示烷二基,杂烷二基,环烷二基,杂环烷二基,亚芳基,亚杂芳基或烷基亚芳基。 R2表示氢原子,烷基,杂烷基,环烷基,杂环烷基,芳基,杂芳基,烷氧基或烷基烷氧基; R 3,R 4,R 5和R 6各自独立地表示氢原子或碳原子数1〜5的烷基。 n1表示0〜10的整数, n2表示0〜10的整数。当共聚物掺入抗蚀剂组合物中时,可以提供令人满意的抗敏剂图案,其具有高灵敏度,高分辨率,高耐蚀刻性和减少的废气量。