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    • 1. 发明授权
    • Nitride semiconductor light emitting device
    • 氮化物半导体发光器件
    • US07777245B2
    • 2010-08-17
    • US11499727
    • 2006-08-07
    • Seok Min HwangHyun Kyung KimKun Yoo KoSang Su HongKyu Han LeeBok Ki Min
    • Seok Min HwangHyun Kyung KimKun Yoo KoSang Su HongKyu Han LeeBok Ki Min
    • H01L33/00
    • H01L33/38H01L33/20
    • The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
    • 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层,有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层,以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合,从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。
    • 2. 发明申请
    • NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    • 氮化物半导体发光器件
    • US20100276725A1
    • 2010-11-04
    • US12838031
    • 2010-07-16
    • Seok Min HWANGHyun Kyung KimKun Yoo KoSang Su HongKyu Han LeeBok Ki Min
    • Seok Min HWANGHyun Kyung KimKun Yoo KoSang Su HongKyu Han LeeBok Ki Min
    • H01L33/36
    • H01L33/38H01L33/20
    • The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
    • 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层,有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层,以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合,从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。
    • 3. 发明授权
    • Nitride semiconductor light emitting device
    • 氮化物半导体发光器件
    • US08258539B2
    • 2012-09-04
    • US12838031
    • 2010-07-16
    • Seok Min HwangHyun Kyung KimKun Yoo KoSang Su HongKyu Han LeeBok Ki Min
    • Seok Min HwangHyun Kyung KimKun Yoo KoSang Su HongKyu Han LeeBok Ki Min
    • H01L33/00
    • H01L33/38H01L33/20
    • The invention relates to a high-output nitride light emitting device. The light emitting device includes a first conductivity type nitride semiconductor layer, an active layer and a second conductivity type nitride semiconductor layer deposited in their order on a substrate. The light emitting device also includes first and second insulation layers formed in different upper surface portions of the nitride semiconductor light emitting device, and first and second bonding pads formed respectively on the first and second insulation layers. The light emitting device further includes first and second extension electrodes extended from the first and second bonding pads and coupled respectively to the first and second conductivity semiconductor layers. The electrode arrangement according to the present invention prevents direct coupling between the bonding pads and the light emitting device, thus allowing a symmetrical structure that can achieve more uniform current spreading using only the extension electrodes.
    • 本发明涉及高输出氮化物发光器件。 发光器件包括依次沉积在衬底上的第一导电型氮化物半导体层,有源层和第二导电型氮化物半导体层。 发光器件还包括形成在氮化物半导体发光器件的不同上表面部分中的第一和第二绝缘层,以及分别形成在第一绝缘层和第二绝缘层上的第一和第二接合焊盘。 发光器件还包括从第一和第二焊盘延伸并分别耦合到第一和第二导电半导体层的第一和第二延伸电极。 根据本发明的电极装置防止接合焊盘和发光器件之间的直接耦合,从而允许仅使用延伸电极实现更均匀的电流扩展的对称结构。
    • 5. 发明申请
    • TOUCH PANEL
    • 触控面板
    • US20130063371A1
    • 2013-03-14
    • US13312545
    • 2011-12-06
    • Woo Jin LeeJae Hun KimChung Mo YangIn Hyung LeeSang Su HongYoung Woo Lee
    • Woo Jin LeeJae Hun KimChung Mo YangIn Hyung LeeSang Su HongYoung Woo Lee
    • G06F3/041
    • G06F3/044
    • Disclosed herein is a structure of a touch panel capable of solving a depletion problem of resources used for a transparent conductive layer, in particular, improving a moiré phenomenon occurring during a image projection process when a metal electrode in a mesh shape is formed on both surfaces of the transparent substrate, by replacing ITO and forming electrodes using a metal thin film on which fine patterns are formed. Exemplary embodiments of the present invention can improve the moiré phenomenon occurring due to overlapping lines between the top and bottom metal electrodes on the transparent substrate during the image projection process and can improve the visibility by minimizing overlapping lines between the metal electrode formed on the transparent substrate and the pixel grid or the black matrix formed on the color filter.
    • 这里公开了一种能够解决用于透明导电层的资源的耗尽问题的触摸面板的结构,特别是改善当在两个表面上形成网状的金属电极时在图像投影处理期间发生的莫尔现象 通过用形成精细图案的金属薄膜代替ITO和形成电极。 本发明的示例性实施例可以改善在图像投影处理期间由于透明基板上的顶部和底部金属电极之间的重叠线而发生的莫尔现象,并且可以通过最小化形成在透明基板上的金属电极之间的重叠线来提高可视性 以及形成在滤色器上的像素网格或黑矩阵。