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1. 发明专利

JP2011054766A Resistance change memory, and method of manufacturing the same 审中-公开
标题翻译：电阻变化记忆体及其制造方法
公开(公告)号：JP2011054766A
公开(公告)日：2011-03-17
申请号：JP2009202483
申请日：2009-09-02
申请人： Semiconductor Technology Academic Research Center , 株式会社半導体理工学研究センター
发明人： TAKAHASHI TSUNEO , ARITA MASASHI , FUJII TAKASHI , KAJI HIROMICHI , KONDO YOJI , SHIGENIWA MASAHIRO , FUJIWARA ICHIRO , YAMAGUCHI TAKESHI , YOSHIMARU MASAKI
IPC分类号： H01L27/10 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a resistance change memory capable of exhibiting hysteresis characteristics and memory characteristics of resistance securely with higher reproducibility than conventional techniques, and to provide a method of manufacturing the memory.
SOLUTION: The resistance change memory, constituted by sandwiching a PCMO layer of Pr
x Ca
1-x MnO
3 between a lower and an upper electrode, has a metal oxide layer inserted and formed between the PCMO layer and the upper or lower electrode. Here, the metal oxide is an oxide of metal of the upper electrode, and at least one of the upper and lower electrodes is made of one of tungsten (W), molybdenum (Mo), chromium (Cr), aluminum (Al) and silver (Ag).
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供能够以比常规技术更高的再现性可靠地显示磁滞特性和电阻的存储特性的电阻变化存储器，并提供一种制造存储器的方法。
解决方案：电阻变化记忆是通过将下一层和下层之间的第一层和第二层的第一层和第二层上电极具有插入并形成在PCMO层和上电极或下电极之间的金属氧化物层。这里，金属氧化物是上部电极的金属氧化物，上部电极和下部电极中的至少一个由钨（W），钼（Mo），铬（Cr），铝（Al）和银（Ag）。版权所有（C）2011，JPO＆INPIT

2. 发明专利

JP2011155159A Resistance change type memory, and method for controlling and manufacturing the same 审中-公开
标题翻译：电阻变化型存储器及其控制和制造方法
公开(公告)号：JP2011155159A
公开(公告)日：2011-08-11
申请号：JP2010016116
申请日：2010-01-28
申请人： Semiconductor Technology Academic Research Center , 株式会社半導体理工学研究センター
发明人： TAKAHASHI TSUNEO , ARITA MASASHI , FUJII TAKASHI , KAJI HIROMICHI , KONDO YOJI , SHIGENIWA MASAHIRO , FUJIWARA ICHIRO , YAMAGUCHI TAKESHI , YOSHIMARU MASAKI
IPC分类号： H01L27/10 , G11C13/00 , H01L45/00 , H01L49/00
CPC分类号： G11C13/0069 , G11C13/0007 , G11C2013/0083
摘要： PROBLEM TO BE SOLVED: To provide a resistance-varying type memory which can manifest hysteresis characteristics, without fail, and the memory characteristics of resistance at the higher reproducibility than those of conventional technologies, and has an change and rate of change which is greater than those of conventional technologies, and to provide a method for controlling and manufacturing the memory. SOLUTION: In a unipolar operation type resistance change memory, a DC voltage of which the two polarities are applied to a pair of electrodes; the voltage having one polarity is changed, whereby a low-resistance state having a first resistance value and a high-resistance state having a second resistance value higher than the first resistance value are set; and the low-resistance state or high-resistance state is read out. The resistance change memory is configured so as to narrow a molybdenum oxide (MoOx) by the pair of electrodes. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：为了提供可以显示迟滞特性的电阻变化型存储器，并且具有比常规技术更高的再现性的电阻的存储特性，并且具有变化和变化率大于常规技术，并且提供用于控制和制造存储器的方法。解决方案：在单极操作型电阻变化存储器中，将两个极性施加到一对电极的直流电压; 改变具有一个极性的电压，由此设置具有第一电阻值和具有高于第一电阻值的第二电阻值的高电阻状态的低电阻状态; 读出低电阻状态或高电阻状态。电阻变化存储器被配置为通过一对电极来使氧化钼（MoO x）变窄。版权所有（C）2011，JPO＆INPIT

3. 发明专利

JP2013058792A Resistance change type memory 有权
标题翻译：电阻变化型存储器
公开(公告)号：JP2013058792A
公开(公告)日：2013-03-28
申请号：JP2012256096
申请日：2012-11-22
申请人： Handotai Rikougaku Kenkyu Center:Kk , 株式会社半導体理工学研究センター
发明人： TAKAHASHI TSUNEO , ARITA MASASHI , FUJII TAKASHI , KAJI HIROMICHI , KONDO YOJI , SHIGENIWA MASAHIRO , FUJIWARA ICHIRO , YAMAGUCHI TAKESHI , YOSHIMARU MASAKI
IPC分类号： H01L27/105 , H01L45/00 , H01L49/00
摘要： PROBLEM TO BE SOLVED: To provide a resistance change type memory capable of expressing the hysteresis characteristics and memory characteristics of resistance reliably with high reproducibility when compared with prior art, and to provide a manufacturing method therefor.SOLUTION: In the resistance change type memory consisting of a PCMO layer composed of PrCaMnOand sandwiched by a lower electrode and an upper electrode, a metal oxide layer is inserted between the PCMO layer and the upper electrode or lower electrode. The metal oxide is an oxide of the metal of the upper electrode, and at least one of the upper electrode and lower electrode is composed of any one of tungsten (W), molybdenum (Mo), chromium (Cr), aluminum (Al), and silver (Ag). The resistance change type memory has two values of first low resistance state and first high resistance state in the positive DC voltage region, and two values of second high resistance state and second low resistance state in the negative DC voltage region, thus storing the information of total four values.
摘要翻译：要解决的问题：提供一种与现有技术相比，能够以高再现性可靠地表现电阻的滞后特性和存储特性的电阻变化型存储器，并提供其制造方法。
解决方案：在由包括由Pr x Ca 1-x MnO的PCMO层组成的电阻变化型存储器中， SB POS =“POST”> 3 并且被下电极和上电极夹住，在PCMO层和上电极或下电极之间插入金属氧化物层。金属氧化物是上部电极的金属的氧化物，上部电极和下部电极中的至少一方由钨（W），钼（Mo），铬（Cr），铝（Al），银（Ag）。电阻变化型存储器在正直流电压区域中具有第一低电阻状态和第一高电阻状态的两个值，以及负的直流电压区域中的第二高电阻状态和第二低电阻状态的两个值，从而存储共四个值。版权所有（C）2013，JPO＆INPIT

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