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1. 发明授权

US09817040B2 Measuring method of low off-state current of transistor 有权
公开(公告)号：US09817040B2
公开(公告)日：2017-11-14
申请号：US14625984
申请日：2015-02-19
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Masashi Tsubuku , Kazuma Furutani , Atsushi Hirose , Toshihiko Takeuchi
IPC分类号： G01R31/26 , G01R19/00
CPC分类号： G01R19/0092
摘要： A minute current measurement method is provided. In the current measurement method, a first potential is applied to a first terminal of a transistor under test, a second potential is applied to a first terminal of a first transistor, the first transistor is turned on to accumulate a predetermined charge in a node electrically connecting a second terminal of the transistor under test with a second terminal of the first transistor, a third potential of an output terminal of a read circuit electrically connected to the node is measured, the first transistor is turned off, a fourth potential of the output terminal of the read circuit electrically connected to the node is measured, the amount of the charge held by the node is estimated from the amount of change in the potential of the output terminal of the read circuit (e.g., a difference between the third potential and the fourth potential), and a value of current flowing between the first terminal of the transistor under test and the second terminal of the first transistor is calculated from the amount of the charge held by the node.

2. 发明授权

US09716109B2 Analog circuit and semiconductor device 有权
公开(公告)号：US09716109B2
公开(公告)日：2017-07-25
申请号：US15063706
申请日：2016-03-08
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L25/00 , H01L27/12 , H01L29/786 , H01L33/02 , H04R1/02 , H01L29/36 , H01L27/15 , H01L27/32 , H01L29/24 , H04M1/02 , H01L21/8234
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

3. 发明授权

US10115743B2 Analog circuit and semiconductor device 有权
公开(公告)号：US10115743B2
公开(公告)日：2018-10-30
申请号：US15652312
申请日：2017-07-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L33/02 , H01L27/12 , H01L29/36 , H01L29/786 , H01L29/24 , H01L27/32 , H01L27/15 , H04M1/02 , H04R1/02 , H01L21/8234
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

4. 发明授权

US09804080B2 Color sensor and electronic device having the same 有权
公开(公告)号：US09804080B2
公开(公告)日：2017-10-31
申请号：US13959044
申请日：2013-08-05
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsushi Hirose
IPC分类号： H01J40/14 , G01N21/25 , H01L27/146 , H01L27/144 , G09G3/34
CPC分类号： G01N21/255 , G09G3/3406 , G09G3/3413 , G09G2320/0626 , G09G2320/0666 , G09G2360/144 , G09G2360/145 , H01L27/144 , H01L27/14621 , H01L27/14623 , H01L27/14685
摘要： A color sensor with a plurality of optical sensors in which the number of terminals for connection with the outside can be reduced. The color sensor includes a plurality of optical sensors each provided with a photoelectric conversion element and an optical filter over a light-transmitting substrate. The optical filters in the plurality of optical sensors have light-transmitting characteristics different from each other. The plurality of optical sensors is mounted over an interposer including a plurality of terminal electrodes for electrical connection with an external device. The interposer includes a wiring having a plurality of branches for electrical connection between the terminal electrode for inputting a high power supply potential to the plurality of optical sensors and a wiring having a plurality of branches for electrical connection between the terminal electrode for inputting a low power supply potential to the plurality of optical sensors.

5. 发明授权

US08803589B2 Analog circuit and semiconductor device 有权
标题翻译：模拟电路和半导体器件
公开(公告)号：US08803589B2
公开(公告)日：2014-08-12
申请号：US13733291
申请日：2013-01-03
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L31/00
CPC分类号： H01L27/1225 , H01L21/823412 , H01L27/124 , H01L27/1255 , H01L27/156 , H01L27/3213 , H01L29/24 , H01L29/36 , H01L29/7869 , H01L29/78693 , H01L33/025 , H01L2924/0002 , H04M1/0266 , H04R1/02 , H01L2924/00
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.
摘要翻译：目的是获得使用其中使用氧化物半导体层的薄膜晶体管，在检测信号和宽动态范围中具有高灵敏度的半导体器件。使用具有作为沟道形成层的功能的氧化物半导体的薄膜晶体管形成模拟电路，其氢浓度为5×1019个原子/ cm3以下，并且在该状态下基本上起绝缘体的作用其中不产生电场。因此，可以获得在检测信号中具有高灵敏度和宽动态范围的半导体器件。

6. 发明授权

US10319744B2 Analog circuit and semiconductor device 有权
公开(公告)号：US10319744B2
公开(公告)日：2019-06-11
申请号：US16133823
申请日：2018-09-18
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Jun Koyama , Atsushi Hirose , Masashi Tsubuku , Kosei Noda
IPC分类号： H01L27/15 , H01L27/12 , H04R1/02 , H04M1/02 , H01L27/32 , H01L29/24 , H01L29/786 , H01L29/36 , H01L33/02 , H01L21/8234
摘要： An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

7. 发明授权

US09645463B2 Display device 有权
公开(公告)号：US09645463B2
公开(公告)日：2017-05-09
申请号：US15368969
申请日：2016-12-05
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Atsushi Hirose
IPC分类号： G09G5/00 , G02F1/1362 , G02F1/1368 , H01L27/12 , G02F1/136
CPC分类号： G02F1/136286 , G02F1/134309 , G02F1/136213 , G02F1/136277 , G02F1/1368 , G02F2001/13606 , G02F2001/136295 , G02F2201/123 , G02F2202/10 , G02F2202/103 , G09G3/3677 , G09G2330/021 , H01L27/1225 , H01L27/124 , H01L27/1255 , H01L29/78669 , H01L29/7869
摘要： To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.

8. 发明申请

US20130077735A1 SHIFT REGISTER CIRCUIT 有权
标题翻译：移位寄存器电路
公开(公告)号：US20130077735A1
公开(公告)日：2013-03-28
申请号：US13628437
申请日：2012-09-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Atsushi Hirose
IPC分类号： H01L25/00 , G11C19/00
CPC分类号： G11C19/28
摘要： A shift register circuit including a logic circuit capable of controlling the threshold voltage of a transistor and outputting a signal corresponding to an input signal by changing only the potential of a back gate without changing the potential of a gate is provided. In a shift register circuit including a logic circuit with a first transistor and a second transistor having the same conductivity type, a first gate electrode of the first transistor is connected to a source electrode or a drain electrode of the first transistor, an input signal is supplied to a second gate electrode of the first transistor, a clock signal is supplied to a gate electrode of the second transistor, and the first gate electrode and the gate electrode are formed from the same layer.
摘要翻译：一种移位寄存器电路，其特征在于提供一种能够控制晶体管的阈值电压并输出与输入信号相对应的信号的逻辑电路，只需改变后门的电位而不改变栅极的电位。在包括具有第一晶体管的逻辑电路和具有相同导电类型的第二晶体管的移位寄存器电路中，第一晶体管的第一栅电极连接到第一晶体管的源电极或漏电极，输入信号为提供给第一晶体管的第二栅电极，时钟信号被提供给第二晶体管的栅电极，并且第一栅电极和栅极由同一层形成。

9. 发明授权

US10564499B2 Display device 有权
公开(公告)号：US10564499B2
公开(公告)日：2020-02-18
申请号：US15884440
申请日：2018-01-31
申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
发明人： Atsushi Hirose
IPC分类号： G09G5/00 , G02F1/1362 , G02F1/1368 , H01L27/12 , G02F1/1343 , G09G3/36 , G02F1/136 , H01L29/786
摘要： To provide a display device in which parasitic capacitance between wirings can be reduced while preventing increase in wiring resistance. To provide a display device with improved display quality. To provide a display device with low power consumption. A pixel of the liquid crystal display device includes a signal line, a scan line intersecting with the signal line, a first electrode projected from the signal line, a second electrode facing the first electrode, and a pixel electrode connected to the second electrode. Part of the scan line has a loop shape, and part of the first electrode is located in a region overlapped with an opening of the scan line. In other words, part of the first electrode is not overlapped with the scan line.

10. 发明授权

US10424671B2 Semiconductor device, circuit board, and electronic device 有权
公开(公告)号：US10424671B2
公开(公告)日：2019-09-24
申请号：US15220706
申请日：2016-07-27
申请人： Semiconductor Energy Laboratory Co., Ltd.
发明人： Shunpei Yamazaki , Kiyoshi Kato , Hidekazu Miyairi , Akihisa Shimomura , Atsushi Hirose
IPC分类号： H01L27/108 , H01L29/786 , G11C11/24
摘要： A novel semiconductor device or memory device is provided. Alternatively, a semiconductor device or memory device in which storage capacity per unit area is large is provided. The semiconductor device includes a sense amplifier provided to a semiconductor substrate and a memory cell provided over the sense amplifier. The sense amplifier includes a first transistor. The memory cell includes a capacitor over the semiconductor substrate, a second transistor provided over the capacitor, a conductor, and a groove portion. The capacitor includes a first electrode and a second electrode. The first electrode is formed along the groove portion. The second electrode has a region facing the first electrode in the groove portion. The second transistor includes an oxide semiconductor. One of a source and a drain of the second transistor is electrically connected to the second electrode through the conductor.

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