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1. 发明申请

US20220077282A1 Electronic Device Including Doped Regions and a Trench Between the Doped Regions 有权
公开(公告)号：US20220077282A1
公开(公告)日：2022-03-10
申请号：US17016708
申请日：2020-09-10
申请人： Semiconductor Components Industries, LLC
发明人： Gary Horst Loechelt , Balaji Padmanabhan , Dean E. Probst , Tirthajyoti Sarkar , Prasad Venkatraman , Muh-Ling Ger
IPC分类号： H01L29/06 , H01L29/78
摘要： An electronic device can include doped regions and a trench disposed between the doped regions, wherein the trench can include a conductive member. In an embodiment, a parasitic transistor can include doped regions as drain/source regions and the conductive member as a gate electrode. A semiconductor material can lie along a bottom or sidewall of the trench and be a channel region of the parasitic transistor. The voltage on the gate electrode or the dopant concentration can be selected so that the channel region does not reach inversion during the normal operation of the electronic device.

2. 发明授权

US10707203B2 Cascode semiconductor device structure and method therefor 有权
公开(公告)号：US10707203B2
公开(公告)日：2020-07-07
申请号：US16225930
申请日：2018-12-19
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Balaji Padmanabhan , Prasad Venkatraman , Zia Hossain , Chun-Li Liu , Woochul Jeon , Jason McDonald
IPC分类号： H01L27/06 , H01L21/8258 , H01L21/74 , H01L23/367 , H01L29/417 , H01L29/778 , H01L29/10 , H01L27/02 , H01L29/872 , H01L29/20 , H01L23/48 , H01L29/861
摘要： A method for forming a cascode rectifier structure includes providing a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are provided adjacent a major surface of the heterostructure and a control electrode is provided between the first and second current carrying electrode. A rectifier device is provided integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is provided further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes. The cascode rectifier structure is provided as a two terminal device.

3. 发明授权

US10199373B2 Method of forming a heterojunction semiconductor device having integrated clamping device 有权
公开(公告)号：US10199373B2
公开(公告)日：2019-02-05
申请号：US15648211
申请日：2017-07-12
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Balaji Padmanabhan , Prasad Venkatraman , Zia Hossain , Chun-Li Liu , Jason McDonald , Ali Salih , Alexander Young
IPC分类号： H01L29/417 , H01L27/06 , H01L27/02 , H01L23/367 , H01L29/778 , H01L29/10 , H01L21/8258 , H01L21/74 , H01L29/872 , H01L23/48 , H01L29/861 , H01L29/20
摘要： A cascode switch structure includes a group III-V transistor structure having a first current carrying electrode, a second current carrying electrode and a first control electrode. A semiconductor MOSFET device includes a third current carrying electrode electrically connected to the first current carrying electrode, a fourth current carrying electrode electrically connected to the first control electrode, and a second control electrode. A first diode includes a first cathode electrode electrically connected to the second current carrying electrode and a first anode electrode. A second diode includes a second anode electrode electrically connected to the first anode electrode and a second cathode electrode electrically connected to the fourth current carrying electrode. In one embodiment, the group III-V transistor structure, the first diode, and the second diode are integrated within a common substrate.

4. 发明授权

US10056499B2 Bidirectional JFET and a process of forming the same 有权
公开(公告)号：US10056499B2
公开(公告)日：2018-08-21
申请号：US15254837
申请日：2016-09-01
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Balaji Padmanabhan , Prasad Venkatraman
IPC分类号： H01L29/15 , H01L29/808 , H01L29/20 , H01L29/423 , H01L29/43 , H01L29/40 , H01L29/06 , H01L29/417 , H01L29/66 , H01L29/10
CPC分类号： H01L29/8083 , H01L29/0653 , H01L29/1066 , H01L29/1602 , H01L29/20 , H01L29/2003 , H01L29/22 , H01L29/2203 , H01L29/404 , H01L29/407 , H01L29/41741 , H01L29/42316 , H01L29/432 , H01L29/66909 , H01L29/66924
摘要： An electronic device comprising a bidirectional JFET can include a drain/source region; a lightly doped semiconductor layer overlying the drain/source region; a source/drain region overlying the lightly doped semiconductor layer; a trench extending through the source/drain region and into the lightly doped semiconductor layer; a gate electrode of the bidirectional JFET within the trench; and a field electrode within the trench. A process of forming an electronic device can include providing a workpiece including a first doped region and a lightly doped semiconductor layer overlying the first doped region; defining a trench extending into the lightly doped semiconductor layer; forming a gate electrode within the trench, wherein the gate electrode extends to a sidewall of the trench; and forming a field electrode within the trench, wherein a bidirectional JFET includes the first doped region, the lightly doped semiconductor layer, a second doped region, and the gate electrode.

5. 发明申请

US20180166557A1 CASCODE CONFIGURED SEMICONDUCTOR COMPONENT 审中-公开
公开(公告)号：US20180166557A1
公开(公告)日：2018-06-14
申请号：US15882478
申请日：2018-01-29
申请人： Semiconductor Components Industries, LLC
发明人： Balaji Padmanabhan , Prasad Venkatraman
IPC分类号： H01L29/66 , H01L27/02 , H01L29/20 , H01L29/205 , H01L29/78 , H01L29/778 , H01L29/417
CPC分类号： H01L29/66462 , H01L27/0266 , H01L29/0696 , H01L29/2003 , H01L29/205 , H01L29/404 , H01L29/407 , H01L29/41758 , H01L29/66537 , H01L29/66704 , H01L29/7787 , H01L29/7823 , H01L29/7825
摘要： In accordance with an embodiment, a cascode connected semiconductor component and a method for manufacturing the cascode connected semiconductor component are provided. The cascode connected semiconductor component has a pair of silicon based transistors, each having a body region, a gate region over the body region, a source region and a drain. The source regions of a first and second silicon based transistor are electrically connected together and the drain regions of the first and second silicon based transistors are electrically connected together. The gate region of the second silicon based transistor is connected to the drain regions of the first and second silicon based transistors. The body region of the second silicon based transistor has a dopant concentration that is greater than the dopant concentration of the first silicon based transistor. A gallium nitride based transistor has a source region coupled to the first and second silicon based transistor.

6. 发明授权

US09780196B2 Method of forming a semiconductor device including forming a shield conductor overlying a gate conductor 有权
公开(公告)号：US09780196B2
公开(公告)日：2017-10-03
申请号：US15261308
申请日：2016-09-09
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Balaji Padmanabhan , Prasad Venkatraman , Gordon M. Grivna
IPC分类号： H01L29/40 , H01L29/417 , H01L29/423 , H01L29/66 , H01L29/78 , H01L29/51
CPC分类号： H01L29/66666 , H01L29/407 , H01L29/4175 , H01L29/41766 , H01L29/4236 , H01L29/513 , H01L29/66621 , H01L29/66636 , H01L29/66734 , H01L29/7813 , H01L29/7827 , H01L29/7834 , H01L29/7835
摘要： In one embodiment, a semiconductor device is formed to include a gate structure extending into a semiconductor material that is underlying a first region of semiconductor material. The gate structure includes a conductor and also a gate insulator that has a first portion positioned between the gate conductor and a first portion of the semiconductor material that underlies the gate conductor. The first portion of the semiconductor material is configured to form a channel region of the transistor which underlies the gate conductor. The gate structure may also include a shield conductor overlying the gate conductor and having a shield insulator between the shield conductor and the gate conductor. The shield insulator may also have a second portion positioned between the shield conductor and a second portion of the gate insulator and a third portion overlying the shield conductor.

7. 发明授权

US09741711B2 Cascode semiconductor device structure and method therefor 有权
公开(公告)号：US09741711B2
公开(公告)日：2017-08-22
申请号：US14853729
申请日：2015-09-14
申请人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
发明人： Balaji Padmanabhan , Prasad Venkatraman , Zia Hossain , Chun-Li Liu , Woochul Jeon , Jason McDonald
IPC分类号： H01L29/66 , H01L21/70 , H01L27/06 , H01L27/02 , H01L23/367 , H01L29/417 , H01L29/778 , H01L29/10 , H01L21/8258 , H01L21/74 , H01L29/872 , H01L23/48 , H01L29/861 , H01L29/20
CPC分类号： H01L27/0629 , H01L21/743 , H01L21/8258 , H01L23/3677 , H01L23/481 , H01L27/0255 , H01L27/0266 , H01L27/0688 , H01L29/1087 , H01L29/2003 , H01L29/41766 , H01L29/7783 , H01L29/861 , H01L29/872 , H01L2924/0002 , H01L2924/00
摘要： In one embodiment, a cascode rectifier structure includes a group III-V semiconductor structure includes a heterostructure disposed on a semiconductor substrate. A first current carrying electrode and a second current carrying electrode are disposed adjacent a major surface of the heterostructure and a control electrode is disposed between the first and second current carrying electrode. A rectifier device is integrated with the group III-V semiconductor structure and is electrically connected to the first current carrying electrode and to a third electrode. The control electrode is further electrically connected to the semiconductor substrate and the second current path is generally perpendicular to a primary current path between the first and second current carrying electrodes.

8. 发明授权

US09129889B2 High electron mobility semiconductor device and method therefor 有权
标题翻译：高电子迁移率半导体器件及其方法
公开(公告)号：US09129889B2
公开(公告)日：2015-09-08
申请号：US14203299
申请日：2014-03-10
申请人： Semiconductor Components Industries, LLC
发明人： Balaji Padmanabhan , John Michael Parsey, Jr. , Ali Salih , Prasad Venkatraman
IPC分类号： H01L29/00 , H01L29/20 , H01L29/778 , H01L29/40 , H01L29/66 , H01L29/04 , H01L29/06 , H01L29/205 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7783 , H01L21/845 , H01L27/0688 , H01L27/0886 , H01L27/1211 , H01L29/045 , H01L29/0615 , H01L29/0657 , H01L29/2003 , H01L29/205 , H01L29/402 , H01L29/404 , H01L29/407 , H01L29/4175 , H01L29/41791 , H01L29/42316 , H01L29/4236 , H01L29/42376 , H01L29/66431 , H01L29/66462 , H01L29/66795 , H01L29/778 , H01L29/7786 , H01L29/7787 , H01L29/7789 , H01L29/785 , H01L29/872
摘要： In one embodiment, Group III-nitride materials are used to form a semiconductor device. A fin structure is formed in the Group III-nitride material, and a gate structure, source electrodes and drain electrodes are formed in spaced relationship to the fin structure. The fin structure provides both polar and semi-polar 2DEG regions. In one embodiment, the gate structure is configured to control current flow in the polar 2DEG region. Shield conductor layers are included above the gate structure and in spaced relationship with drain regions of the semiconductor device.
摘要翻译：在一个实施例中，III族氮化物材料用于形成半导体器件。在III族氮化物材料中形成翅片结构，并且栅极结构，源电极和漏电极形成为与翅片结构间隔开的关系。鳍结构提供极性和半极性2DEG区域。在一个实施例中，门结构被配置为控制极地2DEG区域中的电流。屏蔽导体层包括在栅极结构之上并与半导体器件的漏极区间隔开。

9. 发明授权

US08969956B2 Electronic device including a trench and a conductive structure therein 有权
标题翻译：电子设备包括沟槽和导电结构
公开(公告)号：US08969956B2
公开(公告)日：2015-03-03
申请号：US14176185
申请日：2014-02-10
申请人： Semiconductor Components Industries, LLC
发明人： Prasad Venkatraman , Balaji Padmanabhan
IPC分类号： H01L21/332 , H01L29/78 , H01L29/40 , H01L29/417 , H01L29/66 , H01L29/10
CPC分类号： H01L29/7827 , H01L29/1095 , H01L29/407 , H01L29/41766 , H01L29/66727 , H01L29/66734 , H01L29/7811 , H01L29/7813
摘要： An electronic device can include a transistor structure, including a patterned semiconductor layer overlying a substrate and having a primary surface, wherein the patterned semiconductor layer defines a first trench and a second trench that extend from the primary surface towards the substrate. The electronic device can further include a first conductive electrode and a gate electrode within the first trench. The electronic device can still further include a second conductive electrode within the second trench. The electronic device can include a source region within the patterned semiconductor layer and disposed between the first and second trenches. The electronic device can further include a body contact region within the patterned semiconductor layer and between the first and second trenches, wherein the body contact region is spaced apart from the primary surface. Processes of forming the electronic device can take advantage of forming all trenches during processing sequence.
摘要翻译：电子器件可以包括晶体管结构，其包括覆盖在衬底上并具有主表面的图案化半导体层，其中所述图案化半导体层限定从所述主表面朝向所述衬底延伸的第一沟槽和第二沟槽。电子器件还可以包括在第一沟槽内的第一导电电极和栅电极。电子器件还可以在第二沟槽内进一步包括第二导电电极。电子器件可以包括图案化半导体层内的源极区域，并且设置在第一和第二沟槽之间。电子器件还可以包括在图案化的半导体层内以及在第一和第二沟槽之间的体接触区域，其中主体接触区域与主表面间隔开。形成电子器件的过程可以利用在处理序列期间形成所有沟槽的优点。

10. 发明申请

US20140197483A1 TRENCH SHIELDING STRUCTURE FOR SEMICONDUCTOR DEVICE AND METHOD 有权
标题翻译：用于半导体器件和方法的TRENCH SHIELDING STRUCTURE
公开(公告)号：US20140197483A1
公开(公告)日：2014-07-17
申请号：US14216914
申请日：2014-03-17
申请人： Semiconductor Components Industries, LLC
发明人： Peter A. Burke , Gordon M. Grivna , Prasad Venkatraman
IPC分类号： H01L29/423
CPC分类号： H01L29/4236 , H01L29/0696 , H01L29/401 , H01L29/407 , H01L29/41741 , H01L29/41766 , H01L29/42372 , H01L29/4238 , H01L29/456 , H01L29/4925 , H01L29/4933 , H01L29/66734 , H01L29/7811 , H01L29/7813 , H01L2924/0002 , H01L2924/00
摘要： A shielding structure for a semiconductor device includes a plurality of trenches. The trenches include passivation liners and shield electrodes, which are formed therein. In one embodiment, the shielding structure is placed beneath a control pad. In another embodiment, the shielding structure is placed beneath a control runner.
摘要翻译：用于半导体器件的屏蔽结构包括多个沟槽。沟槽包括形成在其中的钝化衬垫和屏蔽电极。在一个实施例中，屏蔽结构位于控制板下方。在另一个实施例中，屏蔽结构位于控制转轮下方。

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