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1. 发明专利

JP2008311596A Joining method of silicon base material, droplet discharge head, droplet discharge device, and electronic device 有权
标题翻译：硅基材料的接合方法，喷墨头卸料头，放电装置和电子装置
公开(公告)号：JP2008311596A
公开(公告)日：2008-12-25
申请号：JP2007160798
申请日：2007-06-18
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： SATO MITSURU , MORI YOSHIAKI
IPC分类号： H01L21/02
CPC分类号： B41J2/1634 , B41J2/161 , B41J2/1623 , B81C3/001 , B81C2203/036 , H01L21/187 , H01L21/2007 , H01L2224/48091 , H01L2224/48227 , H01L2924/1461 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： PROBLEM TO BE SOLVED: To provide a joining method of a silicon base material capable of accurately and rigidly joining silicon base materials to each other even if heat treatment is not executed at high temperatures; a high-reliability droplet discharge head and droplet discharge device manufactured by using the joining method; and an electronic device manufactured by using the joining method of a silicon base material. SOLUTION: In this joining method of a silicon base material, a base material 11 formed of silicon is prepared, Si-H bonds are imparted to a surface of the base material 11 by applying etching by a hydrofluoric acid-containing solution to the surface of the base material 11, whereby a first silicon base material 1 is provided. Next, the Si-H bonds are selectively cut by irradiating the surface 14 of the first silicon base material 1 with a laser beam, and non-bound hands 15 are exposed. Then, a second silicon base material 2 with non-bound hands 25 of silicon exposed to a surface 24 is prepared, and the surface 14 of the first silicon base material 1 is tightly fitted to the surface 24 of the second silicon base material 2 to join them to each other. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使在高温下不进行热处理，也可以提供能够使硅基材料彼此精确且刚性接合的硅基材料的接合方法。通过使用接合方法制造的高可靠性液滴喷射头和液滴喷射装置; 以及使用硅基材料的接合方法制造的电子器件。解决方案：在硅基材料的接合方法中，制备由硅形成的基材11，通过用含氢氟酸溶液进行蚀刻将Si-H键赋予基材11的表面基材11的表面，由此提供第一硅基材1。接下来，通过用激光束照射第一硅基材1的表面14来选择性地切割Si-H键，并且露出非结合的手15。然后，准备具有暴露于表面24的硅的非结合手25的第二硅基材2，并且将第一硅基材1的表面14紧密地配合到第二硅基材2的表面24上，加入对方版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008147106A Plasma processing device 审中-公开
标题翻译：等离子体加工装置
公开(公告)号：JP2008147106A
公开(公告)日：2008-06-26
申请号：JP2006335370
申请日：2006-12-13
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： UEDA SHINICHI , MORI YOSHIAKI
IPC分类号： H05H1/24 , B08B7/00 , C23F4/00 , H01L21/304 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a plasma processing device with a comparatively simple structure, regardless of a processing surface shape of a work, and capable of carrying out a plasma treatment in accordance with its shape. SOLUTION: The plasma processing device 1 includes a work mounting part 21 mounting a work, a first electrode 2, and a second electrode 3 of a cylindrical shape placed in the opposite side of the first electrode 2 of the work mounting part 21, mounted to be faced to a processing surface 11 of a work 10 the outer peripheral surface of which is faced to the work mounting part 21, and capable of rotating a center axis as a rotation axis, and processes the processing surface 11 by generated plasma. The second electrode 3 contains a part changing a width of an effective electrode region 31a along a peripheral direction on its outer peripheral surface. The second electrode 3 is structured to change a width of the effective electrode region 31 facing to the processing surface 11 by rotating the center axis as a rotation axis. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供具有相对简单的结构的等离子体处理装置，而不管工件的加工表面形状如何，并且能够根据其形状进行等离子体处理。解决方案：等离子体处理装置1包括安装工件的工件安装部21，放置在工件安装部21的第一电极2的相对侧的圆柱形状的第一电极2和第二电极3 安装成面向工件10的外周面与工件安装部21的处理面11，能够使中心轴旋转为旋转轴，并且通过产生等离子体处理处理用面11 。第二电极3包含在其外周面上沿周向改变有效电极区域31a的宽度的部分。第二电极3被构造为通过使作为旋转轴的中心轴旋转来改变面向处理表面11的有效电极区域31的宽度。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2007287452A Plasma apparatus 审中-公开
标题翻译：等离子体设备
公开(公告)号：JP2007287452A
公开(公告)日：2007-11-01
申请号：JP2006112763
申请日：2006-04-14
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI YOSHIAKI , OTA TOSHIHIRO , SAIBA KOJI
IPC分类号： H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a plasma apparatus capable of enlarging the region for a heating process while suppressing a power source output, and capable of surely heating at a target process temperature. SOLUTION: In a plasma apparatus 1, a plasma generating space 21 is supplied with a specified gas, and a voltage is applied between a pair of plate-like members 23 and 24 through a pair of electrodes 25 and 26 for generating plasma. The plasma is emitted toward a work 100 to heat its objective surface 101. An adjusting means adjusts the level of a power supplied to a pair of electrodes 25 and 26 from a power supply, so that the process temperature at heating is a target process temperature, based on at least either a first temperature detecting means for detecting plasma temperature, or a second temperature detecting means for detecting temperature of the work 100 as well as the detecting result of the first temperature detecting means and/or the second temperature detecting means. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体装置，其能够在抑制电源输出的同时放大加热过程的区域，并能够在目标工艺温度下可靠地加热。解决方案：在等离子体装置1中，向等离子体产生空间21供应特定气体，并且通过一对用于产生等离子体的电极25和26将电压施加在一对板状构件23和24之间。等离子体朝向工件100发射以加热其物镜表面101.调节装置调节从电源供应给一对电极25和26的功率的电平，使得加热时的处理温度为目标工艺温度至少基于用于检测等离子体温度的第一温度检测装置或用于检测工件100的温度的第二温度检测装置以及第一温度检测装置和/或第二温度检测装置的检测结果。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2003303803A Method and device for etching 有权
标题翻译：用于蚀刻的方法和装置
公开(公告)号：JP2003303803A
公开(公告)日：2003-10-24
申请号：JP2002055673
申请日：2002-03-01
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： KOIKE TAKASHI , MORI YOSHIAKI
IPC分类号： C23F1/02 , C23F1/12 , H01L21/306
CPC分类号： C23F1/02
摘要： PROBLEM TO BE SOLVED: To provide a method and a device for etching for forming a bank 12 for a member to be treated 10 in order to etch precisely at a predetermined position.
SOLUTION: The liquid-repellent bank 12 is formed in the area outside a predetermined pattern in the member 10. Coating liquid 14 such as an etchant 15 is applied using a discharge head 16 to a part to be etched 18 in the predetermined pattern. The part 18 is hydrophilized beforehand in order to improve the adhesion of the coating liquid 14. The bank 12 is formed of a liquid-repellent filmy substance to inhibit the coating liquid 14 from adhering to the bank 12.
COPYRIGHT: (C)2004,JPO
摘要翻译：要解决的问题：为了提供一种用于蚀刻的方法和装置，用于形成待处理构件10的堤岸12，以便在预定位置精确地蚀刻。解决方案：防液体组12形成在构件10中的预定图案外部的区域中。使用排出头16将诸如蚀刻剂15的涂布液14以预定的模式。为了提高涂布液14的粘附性，预先对部件18进行亲水化处理。堤岸12由防液膜材料形成，以抑制涂布液14粘附到堤岸12上。版权所有（C））2004，JPO

5. 发明专利

JP2003273084A Atmospheric pressure plasma apparatus and atmospheric pressure plasma processing method, device, and device manufacturing method 审中-公开
标题翻译：大气压力等离子体装置和大气压力等离子体处理方法，装置和装置制造方法
公开(公告)号：JP2003273084A
公开(公告)日：2003-09-26
申请号：JP2002072873
申请日：2002-03-15
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI YOSHIAKI
IPC分类号： H05H1/24 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To prevent variation in plasma by preventing changes in high-frequency impedance of a high-frequency circuit, in an atmospheric pressure plasma processing apparatus. SOLUTION: The apparatus comprises a stage 1 that is a grounded lower electrode arranged with a matter 2 to be processed, a high-frequency electrode 4 that is an upper electrode arranged in an upper portion of the stage 1 via an electrical discharge space 3, a high-frequency electric source 6 connected to the high-frequency electrode 4 via a matching circuit 5 and feeding high-frequency electric power to the high-frequency electrode 4 and an actuator 7 for transfering the high-frequency electrode 4 and the matching circuit 5 integrally along a surface of the stage 1. COPYRIGHT: (C)2003,JPO
摘要翻译：解决的问题：在大气压等离子体处理装置中，通过防止高频电路的高频阻抗的变化来防止等离子体的变化。解决方案：该装置包括：阶段1，其是布置有要处理的物体2的接地下电极;高频电极4，其是通过放电设置在载物台1的上部的上电极空间3，经由匹配电路5连接到高频电极4并将高频电力馈送到高频电极4的高频电源6和用于传送高频电极4的致动器7和匹配电路5沿台1的表面一体化。版权所有（C）2003，JPO

6. 发明专利

JP2007287454A Plasma apparatus 审中-公开
标题翻译：等离子体设备
公开(公告)号：JP2007287454A
公开(公告)日：2007-11-01
申请号：JP2006112765
申请日：2006-04-14
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI YOSHIAKI , OTA TOSHIHIRO , SAIBA KOJI
IPC分类号： H05H1/24
摘要： PROBLEM TO BE SOLVED: To provide a plasma apparatus capable of enlarging the region for a heating process while suppressing a power source output, and capable of surely heating at a target process temperature by a simple control. SOLUTION: In a plasma apparatus, a plasma generating space 21 is supplied with a specified gas, and a voltage is applied between a pair of plate-like members 23 and 24 through a pair of electrodes 25 and 26 for generating plasma. A work 100 is heated with the plasma. It comprises at least either a first temperature detecting means or a second temperature detecting means, an interval distance adjusting means, and a control means. The control means, based on the detection result of the first temperature detecting means and/or the second temperature detecting means, controls operation of the interval distance adjusting means, so that the process temperature at heating is a target process temperature for adjusting distance between a plasma emission outlet 211 and a processed 101. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种等离子体装置，其能够在抑制电源输出的同时扩大加热过程的区域，并能够通过简单的控制在目标工艺温度下可靠地加热。解决方案：在等离子体装置中，向特定气体供给等离子体产生空间21，并且通过用于产生等离子体的一对电极25和26将电压施加在一对板状构件23和24之间。工件100与等离子体一起加热。它至少包括第一温度检测装置或第二温度检测装置，间隔距离调节装置和控制装置。控制装置基于第一温度检测装置和/或第二温度检测装置的检测结果控制间隔距离调节装置的操作，使得加热时的处理温度是用于调整间隔距离调节装置之间的距离的目标处理温度等离子体发射出口211和被处理的101.版权所有（C）2008，JPO＆INPIT

7. 发明专利

JP2007069266A Joining material and method of manufacturing joining material 有权
标题翻译：接合材料及其制造方法
公开(公告)号：JP2007069266A
公开(公告)日：2007-03-22
申请号：JP2006329257
申请日：2006-12-06
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI YOSHIAKI , AOKI KOJI , MIYAGAWA TAKUYA
IPC分类号： B23K20/00 , B23K20/24 , C03C27/00 , C04B37/02
摘要： PROBLEM TO BE SOLVED: To join solids together without using a joining material and to stabilize the shape at the time of joining. SOLUTION: Metal, glass or other members 16a and 16b to be joined are exposed to a mixture of HF gas supplied from an HF gas supply section 24 and water vapor supplied from a water vapor generating section 26 at a fluorinating section 12, so that the surfaces of the members 16a and 16b to be joined are fluorinated, and then are placed in a pile on a table 36 in a joining section 14. Then, in a chamber 34 filled with Ar gas atmosphere, the first member 16a to be joined and the second member 16b to be joined are pressurized by a cylinder 46 and are heated by a heater 48 to a temperature below the melting points of both members so as to be joined. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：在不使用接合材料的情况下将固体接合在一起，并且在接合时稳定形状。解决方案：要接合的金属，玻璃或其他构件16a和16b暴露于从HF气体供应部分24供应的HF气体和在氟化部分12处从水蒸汽发生部分26供应的水蒸气的混合物，使得待接合的构件16a和16b的表面被氟化，然后在接合部分14中放置在桌子36上。然后，在填充有Ar气体气氛的室34中，第一构件16a至被接合的第二构件16b被圆筒46加压，并被加热器48加热到低于两个构件的熔点的温度以便接合。版权所有（C）2007，JPO＆INPIT

8. 发明专利

JP2006303143A Apparatus and method for cleaning substrate 有权
标题翻译：装置和清洁基板的方法
公开(公告)号：JP2006303143A
公开(公告)日：2006-11-02
申请号：JP2005121996
申请日：2005-04-20
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： AOKI KOJI , MORI YOSHIAKI
IPC分类号： H01L21/304 , B08B3/02 , H01L21/027
摘要： PROBLEM TO BE SOLVED: To provide a cleaning apparatus and a cleaning method capable of suppressing the variation in ozone concentration upon cleaning and reducing the waste of pure water.
SOLUTION: The cleaning apparatus 100 comprises a rotary table 13T as a supporting section for supporting a substrate W, an ozone ice forming device 23 as an ozone ice forming section for freezing ozone water into ozone ice, an ozone ice melting device 24 as an ozone ice melting section for melting the ozone ice into ozone liquid, and a delivery nozzle 27 as a delivery section for delivering the ozone liquid to the substrate W supported by the rotary table 13T. The cleaning apparatus 100 forms the ozone liquid while melting the ozone ice, and delivers the ozone liquid having uniform ozone concentration to the substrate W and cleans it by the strong oxidizing/decomposing action of ozone.
COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够抑制清洗时臭氧浓度变化并减少纯水浪费的清洁装置和清洁方法。解决方案：清洁设备100包括作为用于支撑基板W的支撑部分的旋转台13T，用于将臭氧水冷凝成臭氧冰的臭氧冰形成部分的臭氧冰形成装置23，臭氧冰熔化装置24 作为用于将臭氧冰融化成臭氧液体的臭氧冰融化部，以及作为用于将臭氧液体输送到由旋转台13T支撑的基板W的输送部的输送喷嘴27。清洁装置100在熔化臭氧冰的同时形成臭氧液体，并且将具有均匀臭氧浓度的臭氧液体输送到基板W，并通过臭氧的强氧化/分解作用进行清洗。版权所有（C）2007，JPO＆INPIT

9. 发明专利

JP2004325087A Method and apparatus for evaluating liquid coating 审中-公开
公开(公告)号：JP2004325087A
公开(公告)日：2004-11-18
申请号：JP2003116115
申请日：2003-04-21
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： MORI YOSHIAKI , KOIKE TAKASHI , MIYAGAWA TAKUYA , TAKAGI KENICHI
IPC分类号： G01B11/26 , B05C11/00 , B05D3/00 , G01N13/00
摘要： PROBLEM TO BE SOLVED: To evaluate the behavior when drops discharged from a nozzle hit a substrate surface at an actual speed, the behavior after the hitting, and the contact angle with the substrate surface. SOLUTION: In a method of evaluating the behavior when the drops 16 discharged from the nozzle 12 hit the substrate 18, the behavior after the hitting, and the contact angle, a plurality of CCD (charge coupled device) cameras 14 are used to directly photograph the drops 16 from a plurality of locations. The drops 16 at and after impacting are photographed to acquire image data. Based on the image data, the behavior of the drops 16 at and after hitting is expressed as a three-dimensional image, and the behavior and contact angle of drops 16 are evaluated from the three-dimensional image. COPYRIGHT: (C)2005,JPO&NCIPI

10. 发明专利

JP2004277238A Continuous treatment apparatus and continuous treatment method 审中-公开
公开(公告)号：JP2004277238A
公开(公告)日：2004-10-07
申请号：JP2003072230
申请日：2003-03-17
申请人： Seiko Epson Corp , セイコーエプソン株式会社
发明人： ASUKE SHINTARO , MORI YOSHIAKI
IPC分类号： G02F1/13 , B65G49/06 , C03C17/25 , C03C23/00 , H01L21/02
CPC分类号： B65G49/061 , B65G2249/02 , B65G2249/04
摘要： PROBLEM TO BE SOLVED: To provide a continuous treatment apparatus and a continuous treatment method by which a plurality of kinds of treatments are continuously and efficiently carried out on the surface of a material to be treated, the combination of the plurality of kinds of the treatments is changed or added and the continuous treatment is smoothly carried out.
SOLUTION: The continuous treatment apparatus 10 for continuously treating the plurality of kinds of the treatments on the surface 17 of the material to be treated 14 is provided with a material-to-be-treated transporting part 20 for holding and transporting the material 14 to be treated in the transporting direction of the material 14 to be treated and the plurality of kinds of treatment units 51, 52, 53, 54, 55, 56 and 57 arranged in line in the transporting direction of the material 14 to be treated and successively carrying out respective different treatments on the material 14 to be treated under atmospheric pressure or a pressure near the atmospheric pressure. The combination of the plurality of kinds of treatment units is freely changed or added.
COPYRIGHT: (C)2005,JPO&NCIPI

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