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1. 发明授权

US5983059A Recyclable toner container for an image forming apparatus 失效
标题翻译：用于图像形成装置的可回收调色剂容器
公开(公告)号：US5983059A
公开(公告)日：1999-11-09
申请号：US925146
申请日：1997-09-08
申请人： Seiji Oka , Yasushi Akiba , Masumi Ikesue , Masakazu Nakada , Hiroyasu Itou
发明人： Seiji Oka , Yasushi Akiba , Masumi Ikesue , Masakazu Nakada , Hiroyasu Itou
IPC分类号： G03G15/08
CPC分类号： G03G15/0894 , G03G15/0855 , G03G15/0865 , G03G15/087 , G03G15/0872 , G03G2215/00987 , G03G2215/0675 , G03G2215/0678
摘要： A recyclable toner container having a hollow cylindrical body, a toner outlet at one end of the container, and a removable cap fitted in the toner outlet. The cap have a plurality of circumferential protuberances on an outer periphery thereof and contacting the inner periphery of the toner outlet. The diameters of the plurality of protuberances are sequentially increased from a downstream side toward an upstream side in a direction in which the cap is inserted into the toner outlet.
摘要翻译：具有中空圆筒体的可回收调色剂容器，容器一端的调色剂出口以及装在调色剂出口中的可拆卸盖。盖在其外周上具有多个周向突起并与调色剂出口的内周接触。多个突起的直径在帽被插入调色剂出口的方向上从下游侧向上游侧依次增加。

2. 发明授权

US06529788B1 Recycling system and recycling method 失效
标题翻译：回收系统和回收利用方法
公开(公告)号：US06529788B1
公开(公告)日：2003-03-04
申请号：US09460763
申请日：1999-12-14
申请人： Tatsuo Tani , Kiyoshi Sakai , Yasushi Akiba , Shohzoh Miyawaki , Teruzo Hasumi , Mitsuaki Urakawa , Tetsuo Yamaoka , Hisashi Ishijima , Hiroyasu Itou
发明人： Tatsuo Tani , Kiyoshi Sakai , Yasushi Akiba , Shohzoh Miyawaki , Teruzo Hasumi , Mitsuaki Urakawa , Tetsuo Yamaoka , Hisashi Ishijima , Hiroyasu Itou
IPC分类号： G06F1900
CPC分类号： G06Q10/06 , B29B2017/0089 , G06Q10/0875 , Y02P90/86
摘要： A recycling system has a recycle information memory database for storing as recycle information, the information on all reutilizable products such as products produced or used under the management of the system, products treated as wastes, and products currently being used in the market. A virtual recycle product designing section is provided for estimating times when the reutilizable products are recovered as products usable for recycling as well as their volumes, based on the recycle information stored in the recycle information memory database. A production scheduling section is provided for setting a production schedule of a recycle product using the reutilizable products based on the estimated times and volumes.
摘要翻译：回收系统具有用于存储为回收信息的回收信息存储数据库，关于系统管理下生产或使用的产品，废弃物处理产品以及目前市场上使用的产品的所有可再利用产品的信息。提供虚拟回收产品设计部分，用于基于存储在再循环信息存储器数据库中的回收信息来估计可再利用产品被回收作为可回收利用的产品及其体积的时间。提供生产调度部分，用于基于估计的时间和体积来设置使用可再生产品的再循环产品的生产计划。

3. 发明授权

US07691697B2 Power composite integrated semiconductor device and manufacturing method thereof 有权
标题翻译：功率复合集成半导体器件及其制造方法
公开(公告)号：US07691697B2
公开(公告)日：2010-04-06
申请号：US12213712
申请日：2008-06-24
申请人： Hiroyasu Itou
发明人： Hiroyasu Itou
IPC分类号： H01L29/72
CPC分类号： H01L24/05 , H01L24/03 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05147 , H01L2224/05166 , H01L2224/05187 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2224/48824 , H01L2224/48844 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/85375 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/00015 , H01L2224/45147
摘要： A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.
摘要翻译：高可靠性功率复合集成半导体器件使用厚铜电极作为功率器件部分的集电极，以抵抗降低导通电阻所需的电阻。此外，确保了铜电极的引线接合连接，并且抑制了铜的扩散和铜的腐蚀的高温下的延时劣化。此外，可以对功率器件部分中的集电极建立直接接合连接，并且还建立到形成在控制电路部分中的控制电路部分上的接合焊盘。迄今为止所需要的设备周边部分的焊盘区域被减少，从而节省了设备的面积，并降低了制造成本。

4. 发明申请

US20080311740A1 Power composite integrated semiconductor device and manufacturing method thereof 有权
公开(公告)号：US20080311740A1
公开(公告)日：2008-12-18
申请号：US12213712
申请日：2008-06-24
申请人： Hiroyasu Itou
发明人： Hiroyasu Itou
IPC分类号： H01L21/768
CPC分类号： H01L24/05 , H01L24/03 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05147 , H01L2224/05166 , H01L2224/05187 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2224/48824 , H01L2224/48844 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/85375 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/00015 , H01L2224/45147
摘要： A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.

5. 发明授权

US07235844B2 Power composite integrated semiconductor device and manufacturing method thereof 有权
标题翻译：功率复合集成半导体器件及其制造方法
公开(公告)号：US07235844B2
公开(公告)日：2007-06-26
申请号：US11132282
申请日：2005-05-19
申请人： Hiroyasu Itou
发明人： Hiroyasu Itou
IPC分类号： H01L29/72
CPC分类号： H01L24/05 , H01L24/03 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05147 , H01L2224/05166 , H01L2224/05187 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2224/48824 , H01L2224/48844 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/85375 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/00015 , H01L2224/45147
摘要： A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.
摘要翻译：高可靠性功率复合集成半导体器件使用厚铜电极作为功率器件部分的集电极，以抵抗降低导通电阻所需的电阻。此外，确保了铜电极的引线接合连接，并且抑制了铜的扩散和铜的腐蚀的高温下的延时劣化。此外，可以对功率器件部分中的集电极建立直接接合连接，并且还建立到形成在控制电路部分中的控制电路部分上的接合焊盘。迄今为止所需要的设备周边部分的焊盘区域被减少，从而节省了设备的面积，并降低了制造成本。

6. 发明授权

US6150697A Semiconductor apparatus having high withstand voltage 有权
标题翻译：具有高耐压的半导体装置
公开(公告)号：US6150697A
公开(公告)日：2000-11-21
申请号：US301562
申请日：1999-04-29
申请人： Akihiko Teshigahara , Akiyoshi Asai , Kunihiro Onoda , Hiroyasu Itou , Ryuichirou Abe , Toshio Sakakibara
发明人： Akihiko Teshigahara , Akiyoshi Asai , Kunihiro Onoda , Hiroyasu Itou , Ryuichirou Abe , Toshio Sakakibara
IPC分类号： H01L21/336 , H01L21/762 , H01L21/84 , H01L27/12 , H01L29/06 , H01L29/78 , H01L27/01
CPC分类号： H01L29/66681 , H01L21/76264 , H01L21/84 , H01L27/1203 , H01L29/0696 , H01L29/66674 , H01L29/7824 , H01L21/76275 , H01L21/76281 , H01L21/76286 , H01L29/402
摘要： An island region surrounded by a trench is provided in an SOI substrate. The island region is further surrounded by a buffer region with a buffer region contact layer. In the island region, a source region is annularly provided around a drain region, and source and drain electrodes are respectively provided on the source and the drain regions. An annular auxiliary electrode is formed with the source electrode to extend over the trench. Accordingly, a voltage applied to the source electrode can be applied to the auxiliary electrode, so that electric field concentration between the buffer region and the source electrode is relaxed.
摘要翻译：在SOI衬底中设置由沟槽包围的岛状区域。岛区还被具有缓冲区接触层的缓冲区包围。在岛状区域，源极区域围绕漏极区域环状设置，源极和漏极电极分别设置在源极和漏极区域上。形成环形辅助电极，源电极在沟槽上延伸。因此，施加到源电极的电压可以施加到辅助电极，使得缓冲区域和源电极之间的电场浓度被放宽。

7. 发明申请

US20070187841A1 Power composite integrated semiconductor device and manufacturing method thereof 有权
标题翻译：功率复合集成半导体器件及其制造方法
公开(公告)号：US20070187841A1
公开(公告)日：2007-08-16
申请号：US11785619
申请日：2007-04-19
申请人： Hiroyasu Itou
发明人： Hiroyasu Itou
IPC分类号： H01L23/52
CPC分类号： H01L24/05 , H01L24/03 , H01L24/06 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/02166 , H01L2224/04042 , H01L2224/05073 , H01L2224/05147 , H01L2224/05166 , H01L2224/05187 , H01L2224/05553 , H01L2224/05554 , H01L2224/05567 , H01L2224/05624 , H01L2224/05644 , H01L2224/0603 , H01L2224/45124 , H01L2224/45144 , H01L2224/48091 , H01L2224/48463 , H01L2224/48624 , H01L2224/48644 , H01L2224/48724 , H01L2224/48744 , H01L2224/48824 , H01L2224/48844 , H01L2224/49111 , H01L2224/49171 , H01L2224/49175 , H01L2224/49431 , H01L2224/85375 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01073 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/05042 , H01L2924/10253 , H01L2924/14 , H01L2924/00014 , H01L2924/00 , H01L2224/05552 , H01L2924/00015 , H01L2224/45147
摘要： A high-reliability power composite integrated semiconductor device uses thick copper electrodes as current collecting electrodes of a power device portion to resist wire resistance needed for reducing ON-resistance. Furthermore, wire bonding connection of the copper electrodes is secured, and also the time-lapse degradation under high temperature which causes diffusion of copper and corrosion- of copper is suppressed. Still furthermore, direct bonding connection can be established to current collecting electrodes in the power device portion, and also established to a bonding pad formed on the control circuit portion in the control circuit portion. A pad area at the device peripheral portion which has been hitherto needed is reduced, so that the area of the device is saved, and the manufacturing cost is reduced.
摘要翻译：高可靠性功率复合集成半导体器件使用厚铜电极作为功率器件部分的集电极，以抵抗降低导通电阻所需的电阻。此外，确保了铜电极的引线接合连接，并且抑制了铜的扩散和铜腐蚀的高温下的延时劣化。此外，可以对功率器件部分中的集电极建立直接接合连接，并且还建立到形成在控制电路部分中的控制电路部分上的接合焊盘。迄今为止所需要的设备周边部分的焊盘区域被减少，从而节省了设备的面积，并降低了制造成本。

8. 发明授权

US06914288B2 EEPROM and EEPROM manufacturing method 有权
标题翻译： EEPROM和EEPROM制造方法
公开(公告)号：US06914288B2
公开(公告)日：2005-07-05
申请号：US10660682
申请日：2003-09-12
申请人： Hiroyasu Itou , Mitsutaka Katada , Hidetoshi Muramoto
发明人： Hiroyasu Itou , Mitsutaka Katada , Hidetoshi Muramoto
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/423 , H01L29/788 , H01L29/792 , H01L21/336 , H01L29/76
CPC分类号： H01L27/11521 , H01L27/115 , H01L27/11524 , H01L29/42324
摘要： A memory transistor of an EEPROM has a floating gate electrode of a shape such that it covers the entirety of a tunnel film and a channel region and does not cover a region between the channel region and an embedded layer. And, a control gate electrode is formed on an interlayer insulating film on the floating gate electrode into a shape such that it is wider than the floating gate electrode above the tunnel film, and is narrower than the floating gate electrode above the channel region.
摘要翻译： EEPROM的存储晶体管具有浮动栅电极，其形状使得其覆盖隧道膜和沟道区的整体，并且不覆盖沟道区和嵌入层之间的区域。并且，在浮栅电极上的层间绝缘膜上形成控制栅电极，使其比隧道膜上方的浮栅电极宽，并且比沟道区域上方的浮栅电极窄。

9. 发明授权

US5677208A Method for making FET having reduced oxidation inductive stacking fault 失效
标题翻译：制造具有减少的氧化感应堆垛层错的FET的方法
公开(公告)号：US5677208A
公开(公告)日：1997-10-14
申请号：US410373
申请日：1995-03-24
申请人： Hiroyasu Itou , Hideya Inagaki
发明人： Hiroyasu Itou , Hideya Inagaki
IPC分类号： H01L29/78 , H01L21/225 , H01L21/265 , H01L21/322 , H01L21/336 , H01L21/8234 , H01L23/544
CPC分类号： H01L23/544 , H01L21/2253 , H01L21/3225 , H01L21/823462 , H01L2223/54426 , H01L2223/54453 , H01L2223/5446 , H01L2924/0002
摘要： An improved manufacturing method for a semiconductor device, which can reduce process inductive fault such as oxidation inductive stacking fault (OSF) and contribute to the improvement of the electric characteristics of the semiconductor device, is disclosed. A thermal oxide film is formed on a semiconductor substrate, then a nitride film is formed and a medium temperature heat treatment is provided to the semiconductor substrate within a temperature range from 600.degree. C. to 1,000.degree. C., whereby an interstitial oxygen concentration can be lowered. Subsequently, ion implantation, etc. are provided as a well region forming process, and a drive-in process is performed by means of a high temperature heat treatment. At this time, ion implantation dose is set to 9.times.10.sup.13 �cm.sup.-2 ! or less, and the temperature of the heat treatment is lowered or the duration of the teat treatment is shortened. After this, an element separation layer process is performed, and a gate oxide film, a gate electrode, a source/drain layer, a CVD oxide film, a contact hole and a metal wire are formed.
摘要翻译：公开了一种用于半导体器件的改进的制造方法，其可以减少诸如氧化感应堆垛层错（OSF）的处理感应故障并且有助于提高半导体器件的电特性。在半导体衬底上形成热氧化膜，然后形成氮化物膜，并在600℃至1000℃的温度范围内向半导体衬底提供中温热处理，由此间隙氧浓度可以被降低随后，提供离子注入等作为阱区形成工艺，并且通过高温热处理进行驱入工艺。此时，离子注入剂量设定为9×10 13 [cm -2]以下，热处理温度降低或乳头处理的持续时间缩短。之后，进行元件分离层工艺，形成栅极氧化膜，栅电极，源/漏层，CVD氧化膜，接触孔和金属线。

10. 发明授权

US5552342A Method for producing a contact hole in a semiconductor device using reflow and etch 失效
标题翻译：使用回流和蚀刻在半导体器件中制造接触孔的方法
公开(公告)号：US5552342A
公开(公告)日：1996-09-03
申请号：US293247
申请日：1994-08-19
申请人： Hiroyasu Itou , Tosiyuki Morisita , Takanori Simamoto
发明人： Hiroyasu Itou , Tosiyuki Morisita , Takanori Simamoto
IPC分类号： H01L21/28 , H01L21/302 , H01L21/3065 , H01L21/768
CPC分类号： H01L21/76802 , Y10S438/978
摘要： An LOCOS film is formed on an Si substrate, a gate oxide film and a gate electrode are formed thereon, and source/drain impurities are ion implanted into the Si substrate using the gate electrode as a mask. Then, a BPSG film is formed at a film density of 1.8 g/cm.sup.3 or more. A recessed part is formed in the BPSG film by the first photolithographic process with an etching depth of 20% or more but under 100% of the thickness of the BPSG film. Thereafter, the BPSG film is fluidized by reflow treatment to shape a part which is to be a contact hole into a funnel with an "upwards convex" curvature. Finally, the part formed into the funnel is etched to make a contact hole. As a result, wiring disconnection within the contact hole can be prevented, the diffusion depth controllability for the source/drain impurities can be improved, and the fall in the impurity density in the source/drain surface can be prevented.
摘要翻译：在Si衬底上形成LOCOS膜，在其上形成栅极氧化膜和栅电极，并且使用栅电极作为掩模将源/漏杂质离子注入到Si衬底中。然后，以1.8g / cm 3以上的膜密度形成BPSG膜。通过第一光刻工艺在BPSG膜中形成凹陷部分，其蚀刻深度为BPSG膜的厚度的20％以上但低于100％。此后，通过回流处理将BPSG膜流化，将作为接触孔的部分成形为具有“向上凸起”曲率的漏斗。最后，将形成漏斗的部分蚀刻以形成接触孔。结果，可以防止接触孔内的布线断开，可以提高源极/漏极杂质的扩散深度可控性，并且可以防止源极/漏极表面中的杂质浓度的下降。

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