专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060026331A1 Data transfer device, data transfer method, and information processing apparatus 审中-公开
标题翻译：数据传送装置，数据传送方法及信息处理装置
公开(公告)号：US20060026331A1
公开(公告)日：2006-02-02
申请号：US10998593
申请日：2004-11-30
申请人： Seiji Kikuchi , Masahiro Tsuchibuchi , Noboru Nishimura , Hiroaki Morimoto
发明人： Seiji Kikuchi , Masahiro Tsuchibuchi , Noboru Nishimura , Hiroaki Morimoto
IPC分类号： G06F13/20
CPC分类号： G06F13/4036 , G06F2213/0024
摘要： A data transfer device for preventing a PCI-X bus from hanging up, which can be caused when a sender of data aborts. An abort signal-receiving section receives an abort signal delivered by the sender of data when the sender aborts. When the abort signal-receiving section receives the abort signal, a dummy data-generating section generates dummy data. When the abort signal-receiving section receives the abort signal, an erroneous parity data-generating section generates erroneous parity data for indicating that the dummy data generated by the dummy data-generating section is a dummy. A data-transmitting section transmits the dummy data generated by the dummy data-generating section and the erroneous parity data generated by the erroneous parity data-generating section, to a recipient of the data via the PCI-X bus.
摘要翻译：一种用于防止PCI-X总线挂起的数据传输装置，这可以在数据发送器中止时引起。中止信号接收部分在发送器中止时接收由发送者发送的中止信号。当中止信号接收部接收到中止信号时，伪数据生成部生成伪数据。当中止信号接收部接收到中止信号时，错误的奇偶校验数据生成部生成用于指示虚拟数据生成部生成的虚拟数据为虚拟的错误奇偶校验数据。数据发送部通过PCI-X总线将由伪数据生成部生成的伪数据和由错误奇偶校验数据生成部生成的错误奇偶校验数据发送给数据的接收者。

2. 发明申请

US20050218815A1 Power generation controller of vehicle power generator 有权
标题翻译：车辆发电机发电控制器
公开(公告)号：US20050218815A1
公开(公告)日：2005-10-06
申请号：US11092720
申请日：2005-03-30
申请人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
发明人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
IPC分类号： H02J7/24 , B60Q1/26 , B60R16/02 , H02J7/14 , H02P9/04 , H02P9/14 , H02P9/26 , H02P9/30
CPC分类号： H02J7/245 , H02P9/305 , Y02T10/92
摘要： The present invention relates to a power generation controller of a vehicle power generator, which includes: voltage detection means for sampling a voltage of a battery based on a reference clock signal; duty range setting means for setting a range for an ON/OFF ratio of a field switching element from the rotation speed of the power generator; control duty computation means for computing the ON/OFF ratio of the field switching element based on thus set duty range from a deviation between a power generation target voltage and voltage information as a result of sampling; and field PWM drive means for controlling the ON/OFF switching operation of the field switching element with an interval based on the reference clock signal from the computed ON/OFF ratio.
摘要翻译：本发明涉及车辆发电机的发电控制器，其包括：基于参考时钟信号对电池的电压进行采样的电压检测装置; 占空范围设定装置，用于根据发电机的转速设定场切换元件的ON / OFF比的范围; 控制占空比计算装置，用于根据由此产生的目标电压与作为采样的结果的电压信息之间的偏差而设定的占空比范围来计算场开关元件的导通/截止比; 以及场PWM驱动装置，用于基于来自所计算的ON / OFF比的参考时钟信号，间隔地控制场开关元件的ON / OFF切换操作。

3. 发明授权

US4843238A Method for identifying a blistered film in layered films 失效
标题翻译：用于识别层状膜中起泡膜的方法
公开(公告)号：US4843238A
公开(公告)日：1989-06-27
申请号：US155101
申请日：1988-02-11
申请人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
发明人： Tadashi Nishioka , Hiroaki Morimoto , Yoji Mashiko , Hiroshi Koyama
IPC分类号： H01L21/66 , G01N23/225 , G01Q60/00 , H01J37/28
CPC分类号： G01N23/2255
摘要： In a method for identifying blistered film in layered films, a focused ion beam irradiates the approximate center of the blister and a portion which has no blister, and individual sets of the measurement data relating to the respective numbers of secondary electrons generated by the irradiation are compared to determine which film of layered films has blistered. Since the focused ion beam is employed, the present method is applicable to the detection of a small blister in layered films. Furthermore, since an enormous number of cutting operations as might have been required in the prior art are eliminated, the present method can be carried out, stably, positively and economically.
摘要翻译：在层状膜中识别起泡膜的方法中，聚焦离子束照射泡囊的大致中心和没有起泡的部分，并且与由照射产生的二次电子的相应数量有关的各组测量数据是相比之下确定哪一层分层膜已经起泡。由于采用聚焦离子束，因此本方法适用于分层膜中小泡的检测。此外，由于消除了现有技术中可能需要的大量切割操作，因此可以稳定，积极和经济地执行本方法。

4. 发明授权

US07227339B2 Power generation controller of vehicle power generator 有权
标题翻译：车辆发电机发电控制器
公开(公告)号：US07227339B2
公开(公告)日：2007-06-05
申请号：US11092720
申请日：2005-03-30
申请人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
发明人： Masaru Kobayashi , Kiyoharu Anzai , Hiroaki Morimoto
IPC分类号： H02H7/06 , H02P9/00 , H02P11/00 , H02P6/02 , H02K1/22
CPC分类号： H02J7/245 , H02P9/305 , Y02T10/92
摘要： The present invention relates to a power generation controller of a vehicle power generator, which includes: voltage detection means for sampling a voltage of a battery based on a reference clock signal; duty range setting means for setting a range for an ON/OFF ratio of a field switching element from the rotation speed of the power generator; control duty computation means for computing the ON/OFF ratio of the field switching element based on thus set duty range from a deviation between a power generation target voltage and voltage information as a result of sampling; and field PWM drive means for controlling the ON/OFF switching operation of the field switching element with an interval based on the reference clock signal from the computed ON/OFF ratio.
摘要翻译：本发明涉及车辆发电机的发电控制器，其包括：基于参考时钟信号对电池的电压进行采样的电压检测装置; 占空范围设定装置，用于根据发电机的转速设定场切换元件的ON / OFF比的范围; 控制占空比计算装置，用于根据由此产生的目标电压与作为采样的结果的电压信息之间的偏差而设定的占空比范围来计算场开关元件的导通/截止比; 以及场PWM驱动装置，用于基于来自所计算的ON / OFF比的参考时钟信号，间隔地控制场开关元件的ON / OFF切换操作。

5. 发明授权

US5149973A Apparatus for wiring semiconductor device using energy beam and wiring method by using the same 失效
标题翻译：使用能量束布线半导体器件的装置及其使用的布线方法
公开(公告)号：US5149973A
公开(公告)日：1992-09-22
申请号：US723094
申请日：1991-06-28
申请人： Hiroaki Morimoto
发明人： Hiroaki Morimoto
IPC分类号： H01L21/3205 , B23K15/00 , B23K15/02 , H01J37/305 , H01J37/317
CPC分类号： H01J37/3178 , B23K15/0013 , B23K15/004 , B23K15/02 , H01J37/3056 , H01J2237/31737
摘要： Disclosed are an apparatus for wiring a semiconductor device and a wiring method therefor which allow a manufacturing step to be simplified without deteriorating an insulation characteristic of an aerial wiring. The semiconductor device wiring apparatus includes a first beam column 1a disposed above a substrate 50 and a second beam column 1b disposed horizontally thereto. Therefore, a wiring portion of the aerial wiring to be formed upwardly is formed by using the first beam column 1a and a wiring portion to be formed horizontally to wiring layer of the substrate 50 is formed by using the second beam column, which results in that no insulating film for the aerial wiring is required to simplify manufacturing steps.
摘要翻译：公开了一种用于布线半导体器件的设备及其布线方法，其允许简化制造步骤，而不会降低空中布线的绝缘特性。半导体器件布线装置包括设置在基板50上方的第一梁柱1a和水平设置的第二梁柱1b。因此，通过使用第一梁柱1a形成向上形成的架空布线的布线部分，并且通过使用第二梁柱形成水平地形成在基板50的布线层上的布线部分，结果是不需要用于空中布线的绝缘膜来简化制造步骤。

6. 发明授权

US4962059A Process for forming electrodes for semiconductor devices using focused ion beam deposition 失效
标题翻译：使用聚焦离子束沉积形成用于半导体器件的电极的工艺
公开(公告)号：US4962059A
公开(公告)日：1990-10-09
申请号：US338233
申请日：1989-04-14
申请人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
发明人： Tadashi Nishioka , Yoji Mashiko , Hiroaki Morimoto , Hiroshi Koyama
IPC分类号： H01L21/768
CPC分类号： H01L21/76877 , Y10S148/02 , Y10S148/05 , Y10S148/131 , Y10S148/158
摘要： A process for forming electrodes for semiconductor devices having a semiconductor substrate and an electrically conductive portion covered and protected by an electrically insulating coating. The process includes the steps of forming an electrically conductive film on the electrically insulating coating, forming an electrode to be connected to an external circuit on the electrically conductive film at a position overlying the electrically conductive portion by exposing portions of the electrically insulating coating and the first electrically conductive film to a converged ion beam, electrically connecting the electrode to the exposed portions of the electrically conductive film, and removing the portions of the electrically conductive film not covered by the electrode. As a result, the likelihood of breakdown of the internal circuit of the semiconductor device connected to the electrically conductive portion while the electrode is being formed is greatly reduced.

7. 发明授权

US08106915B2 Display control circuit and display device 有权
标题翻译：显示控制电路和显示设备
公开(公告)号：US08106915B2
公开(公告)日：2012-01-31
申请号：US12119072
申请日：2008-05-12
申请人： Shintarou Kawano , Kazutoshi Tanimoto , Hiroaki Morimoto
发明人： Shintarou Kawano , Kazutoshi Tanimoto , Hiroaki Morimoto
IPC分类号： G06F13/18 , G06F12/00 , G06F13/14 , G06F13/00 , G09G5/39
CPC分类号： G09G5/006 , G09G5/001 , G09G5/003 , G09G2370/047 , G09G2370/12
摘要： A display control circuit capable of performing arbitration with the use of a simple configuration. The display control circuit exchanges, with a plurality of masters, attribute information defining conditions for displaying video on a display, and includes a memory for storing the attribute information, a plurality of channels associated with the respective masters for accepting, from the masters, access requests to access the memory, and an arbitration controller configured by hardware. The arbitration controller arbitrates the access requests accepted via the respective channels and permits a selected one of the access requests to access the memory.
摘要翻译：一种显示控制电路，其能够使用简单的配置来执行仲裁。显示控制电路与多个主机交换定义用于在显示器上显示视频的条件的属性信息，并且包括用于存储属性信息的存储器，与各个主机相关联的多个通道，用于从主机接收访问访问存储器的请求以及由硬件配置的仲裁控制器。仲裁控制器仲裁通过相应信道接受的接入请求，并允许所选择的一个接入请求访问存储器。

8. 发明授权

US5273935A Method of controlling etching with a focused charged beam by detecting electrical current or secondary electrons 失效
标题翻译：通过检测电流或二次电子来控制聚焦带电束的蚀刻的方法
公开(公告)号：US5273935A
公开(公告)日：1993-12-28
申请号：US501275
申请日：1990-03-29
申请人： Hiroaki Morimoto , Hiroshi Onoda
发明人： Hiroaki Morimoto , Hiroshi Onoda
IPC分类号： H01L21/302 , H01J37/304 , H01L21/3065 , H01L21/311 , H01L21/66 , H01L21/263 , H01L21/42
CPC分类号： B24B37/013 , H01J37/304 , H01L21/31116 , H01L22/26 , H01J2237/24564 , H01J2237/30466
摘要： Accurate etching control using focused ion beams can be achieved if the etching is performed in accordance with a detection signal obtained by detecting an electric current passing from a semiconductor device to ground or secondary electrons generated when the charged beams are spirally applied to a predetermined area during the charged-beam scanning operation. Therefore, the end point of the process can be accurately detected and uniform processing results can be obtained. As a result, precise etching control can be performed and a reliable semiconductor device can be manufactured.
摘要翻译：如果根据通过检测从半导体器件到地面的电流检测到的检测信号或者当将带电波束螺旋地施加到预定区域时产生的二次电子进行蚀刻，则可以实现使用聚焦离子束的精确蚀刻控制带电束扫描操作。因此，可以准确地检测出该过程的终点，并获得均匀的处理结果。结果，可以进行精确的蚀刻控制，并且可以制造可靠的半导体器件。

9. 发明授权

US5141880A Manufacturing method of a junction gate field effect transistor 失效
标题翻译：结栅场效应晶体管的制造方法
公开(公告)号：US5141880A
公开(公告)日：1992-08-25
申请号：US669080
申请日：1991-03-12
申请人： Yasuo Inoue , Hiroaki Morimoto
发明人： Yasuo Inoue , Hiroaki Morimoto
IPC分类号： H01L21/265 , H01L21/20 , H01L21/337 , H01L29/808
CPC分类号： H01L29/66901 , H01L21/2022
摘要： In a manufacturing method of a junction gate field effect transistor, impurities of a first conductivity type are first implanted at a predetermined concentration into a monocrystal silicon layer separately formed on a region to be used as an active region in an insulating layer, and then surfaces of the monocrystal silicon layer and an insulating substrate are covered with a silicon oxide film. Then, impurities of a second conductivity type are implanted at a predetermined concentration into a portion to be used as a gate electrode in a monocrystal silicon layer by a focused ion beam method, and metal ions are implanted at a predetermined concentration into a portion to be used as a gate electrode of the silicon oxide film covering the monocrystal silicon layer by the focused ion beam method. Then, a polycrystal silicon gate electrode doped with impurities and having an area larger than the portion to be used as the gate electrode of the silicon oxide film is formed to cover a surface of the portion to be used as the gate electrode. Thereafter, impurities of the second conductivity type are implanted at a predetermined concentration into the monocrystal silicon layer, using this polycrystal silicon gate electrode as a mask, to form a source region and a drain region.
摘要翻译：在结栅场效应晶体管的制造方法中，首先以预定浓度将第一导电类型的杂质注入到在绝缘层中用作有源区的区域上分开形成的单晶硅层中，然后将表面的单晶硅层和绝缘基板被氧化硅膜覆盖。然后，通过聚焦离子束法将第二导电类型的杂质以预定浓度注入到用于单晶硅层中的栅电极的部分中，并将金属离子以预定浓度注入到一部分中用作通过聚焦离子束法覆盖单晶硅层的氧化硅膜的栅电极。然后，形成掺杂杂质并且具有比用作氧化硅膜的栅电极的部分的面积大的多晶硅栅电极，以覆盖用作栅电极的部分的表面。此后，使用该多晶硅栅电极作为掩模，将第二导电类型的杂质以预定浓度注入到单晶硅层中，以形成源极区和漏极区。

10. 发明授权

US4873163A Photomask material 失效
标题翻译：光掩模材料
公开(公告)号：US4873163A
公开(公告)日：1989-10-10
申请号：US229769
申请日：1988-08-08
申请人： Yaichiro Watakabe , Hiroaki Morimoto , Tatsuo Okamoto
发明人： Yaichiro Watakabe , Hiroaki Morimoto , Tatsuo Okamoto
IPC分类号： G03F1/00 , G03F1/50 , G03F1/52 , G03F1/54 , G03F1/88 , H01L21/027
CPC分类号： G03F1/46 , G03F1/54
摘要： A photomask material according to the present invention comprises a transparent substrate and a silicide film of a transition metal formed on the transparent substrate.
摘要翻译：根据本发明的光掩模材料包括透明基板和形成在透明基板上的过渡金属的硅化物膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式