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1. 发明申请

US20110156045A1 CRYSTAL MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME 有权
标题翻译：晶体制造装置，使用其制造的半导体器件以及使用其制造半导体器件的方法
公开(公告)号：US20110156045A1
公开(公告)日：2011-06-30
申请号：US13061221
申请日：2009-08-28
申请人： Seiichiro Higashi , Naohiro Koba
发明人： Seiichiro Higashi , Naohiro Koba
IPC分类号： H01L29/786 , H01L21/336 , H01L21/762 , H01L21/50 , B05C5/00 , B05C11/00
CPC分类号： H01L31/1892 , C01B33/02 , C30B28/06 , C30B29/06 , C30B35/00 , H01L21/02422 , H01L21/02532 , H01L21/02625 , H01L21/02667 , H01L21/6715 , H01L21/67248 , H01L27/1214 , H01L27/1218 , H01L27/1285 , H01L27/1292 , H01L29/78603 , H01L29/78636 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A crystal manufacturing apparatus capable of manufacturing a crystal in a desired position on a substrate is provided. A spring has one end fixed to a mount and the other end coupled to a magnetic body. The magnetic body has one end coupled to the spring and the other end coupled to a piston. A coil is wound around the magnetic body and electrically connected between a power supply circuit and a ground node (GND). The piston has a linear member inserted in a cylinder. The cylinder has a hollow columnar shape and a small hole at a bottom surface. The cylinder holds a silicon melt. A substrate is supported by an XY stage to be opposed to the small hole of the cylinder. The power supply circuit passes pulse shaped current through the coil to move the piston in an up-down direction (DR1). As a result, a droplet is discharged toward the substrate from the small hole at an initial speed of 1.02 m/s.
摘要翻译：提供一种能够在基板上制造期望位置的晶体的晶体制造装置。弹簧的一端固定到安装座，另一端连接到磁性体。磁体具有与弹簧相连的一端，另一端与活塞相连。线圈缠绕在磁体上并电连接在电源电路和接地节点（GND）之间。活塞具有插入气缸中的线性构件。圆柱体具有中空的柱状形状，在底面具有小孔。气缸保持硅熔体。基板由XY平台支撑以与圆筒的小孔相对。电源电路使脉冲形电流通过线圈，使活塞沿上下方向（DR1）移动。结果，以1.02m / s的初始速度从小孔向基板排出液滴。

2. 发明授权

US08900953B2 Crystal manufacturing apparatus, semiconductor device manufactured using the same, and method of manufacturing semiconductor device using the same 有权
标题翻译：晶体制造装置，使用其制造的半导体装置以及使用其制造半导体装置的方法
公开(公告)号：US08900953B2
公开(公告)日：2014-12-02
申请号：US13061221
申请日：2009-08-28
申请人： Seiichiro Higashi , Naohiro Koba
发明人： Seiichiro Higashi , Naohiro Koba
IPC分类号： H01L21/336 , H01L21/67 , H01L31/18 , H01L29/786 , C30B35/00 , H01L27/12 , C30B28/06 , C30B29/06 , C01B33/02 , H01L21/02
CPC分类号： H01L31/1892 , C01B33/02 , C30B28/06 , C30B29/06 , C30B35/00 , H01L21/02422 , H01L21/02532 , H01L21/02625 , H01L21/02667 , H01L21/6715 , H01L21/67248 , H01L27/1214 , H01L27/1218 , H01L27/1285 , H01L27/1292 , H01L29/78603 , H01L29/78636 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A crystal manufacturing apparatus capable of manufacturing a crystal in a desired position on a substrate is provided. A spring has one end fixed to a mount and the other end coupled to a magnetic body. The magnetic body has one end coupled to the spring and the other end coupled to a piston. A coil is wound around the magnetic body and electrically connected between a power supply circuit and a ground node (GND). The piston has a linear member inserted in a cylinder. The cylinder has a hollow columnar shape and a small hole at a bottom surface. The cylinder holds a silicon melt. A substrate is supported by an XY stage to be opposed to the small hole of the cylinder. The power supply circuit passes pulse shaped current through the coil to move the piston in an up-down direction (DR1). As a result, a droplet is discharged toward the substrate from the small hole at an initial speed of 1.02 m/s.
摘要翻译：提供一种能够在基板上制造期望位置的晶体的晶体制造装置。弹簧的一端固定到安装座，另一端连接到磁性体。磁体具有与弹簧相连的一端，另一端与活塞相连。线圈缠绕在磁体上并电连接在电源电路和接地节点（GND）之间。活塞具有插入气缸中的线性构件。圆柱体具有中空的柱状形状，在底面具有小孔。气缸保持硅熔体。基板由XY平台支撑以与圆筒的小孔相对。电源电路使脉冲形电流通过线圈，使活塞沿上下方向（DR1）移动。结果，以1.02m / s的初始速度从小孔向基板排出液滴。

3. 发明授权

US08653518B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08653518B2
公开(公告)日：2014-02-18
申请号：US12599638
申请日：2007-12-06
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
IPC分类号： H01L29/792 , H01L29/02
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0408 , G11C16/0441 , H01L29/42332 , H01L29/66825
摘要： A semiconductor device has a floating gate structure in which charge storage layers are stacked on a SiO2 layer formed on a substrate made of n-type Si. The charge storage layer has quantum dots made of undoped Si and an oxide layer that covers the quantum dots. The charge storage layer has quantum dots made of n+-Si and an oxide layer that covers the quantum dots. Electrons originally existing in the quantum dots migrate between the quantum dots and the quantum dots via tunnel junction and are distributed in the quantum dots and/or the quantum dots according to the voltage applied to a gate electrode via pads. The distribution is detected in the form of a current (ISD).
摘要翻译：半导体器件具有浮栅结构，其中电荷存储层层叠在形成在由n型Si制成的衬底上的SiO 2层上。电荷存储层具有由未掺杂的Si构成的量子点和覆盖量子点的氧化物层。电荷存储层具有由n + -Si构成的量子点和覆盖量子点的氧化物层。最初存在于量子点中的电子经由隧道结在量子点和量子点之间迁移，并且根据通过焊盘施加到栅电极的电压而分布在量子点和/或量子点中。以电流（ISD）的形式检测分布。

4. 发明授权

US07898020B2 Semiconductor memory, semiconductor memory system using the same, and method for producing quantum dots applied to semiconductor memory 有权
标题翻译：半导体存储器，使用其的半导体存储器系统以及应用于半导体存储器的量子点的制造方法
公开(公告)号：US07898020B2
公开(公告)日：2011-03-01
申请号：US12523682
申请日：2007-12-06
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L29/788 , H01L21/3205
CPC分类号： H01L21/28273 , B82Y10/00 , H01J37/32357 , H01L29/42332 , H01L29/7881
摘要： A semiconductor memory includes a composite floating structure where an insulation film is formed on a semiconductor substrate, Si-based quantum dots covered with an extremely thin Si oxide film is formed on the insulation film, silicide quantum dots covered with a high dielectric insulation film are formed on the extremely thin Si oxide film, and Si-based quantum dots covered with a high dielectric insulation film are formed on the high dielectric insulation film. Multivalued memory operations can be conducted at a high speed and with stability by applying a certain positive voltage to a gate electrode to accumulate electrons in the silicide quantum dots and by applying a certain negative voltage and weak light to the gate electrode to emit the electrons from the silicide quantum dots.
摘要翻译：半导体存储器包括在半导体衬底上形成绝缘膜的复合浮动结构，在绝缘膜上形成覆盖有极薄Si氧化膜的Si基量子点，用高介电绝缘膜覆盖的硅化物量子点为形成在极薄的Si氧化膜上，并且在高介电绝缘膜上形成覆盖有高介电绝缘膜的Si基量子点。可以通过向栅电极施加一定的正电压以在硅化物量子点中积聚电子并且通过向栅电极施加一定的负电压和弱光以从栅极电极发射电子而以高速和稳定的方式进行多值存储器操作硅化物量子点。

5. 发明申请

US20070109243A1 Liquid crystal display device, driving method for liquid crystal display devices, and inspection method for liquid crystal display devices 有权
标题翻译：液晶显示装置，液晶显示装置的驱动方法以及液晶显示装置的检查方法
公开(公告)号：US20070109243A1
公开(公告)日：2007-05-17
申请号：US11650491
申请日：2007-01-08
申请人： Seiichiro Higashi
发明人： Seiichiro Higashi
IPC分类号： G09G3/36
CPC分类号： G09G3/3611 , G09G3/006 , G09G3/2011 , G09G3/3648 , G09G3/3688 , G09G2300/0408 , G09G2310/027 , G09G2310/0281 , G09G2310/0286 , G09G2310/0297 , G09G2310/08 , G09G2330/021 , G09G2330/12
摘要： Using technology which uses a single shit register and simultaneously generates multiple pulses, this invention is a liquid crystal display device which rapidly drives data lines. It is possible to increase the frequency of the shit register output signal without changing the frequency of the shift register operation clock. If the shift register output signals, by means of analog switches, are used to determine the video signal sampling timing, high speed data line driving can be realized. Additionally, if the output signals of the shift register mentioned above are used to determine the video signal latch timing in a digital driver, high speed latching of the video signal can be realized. Consequently, even if the driving circuits of the liquid crystal display matrix are composed of TFTs, high speed operation of the driving circuits is possible without increasing power consumption. The shift register can also be used to inspect the electrical characteristics of the data lines and analog switches.
摘要翻译：使用使用单个寄存器并同时产生多个脉冲的技术，本发明是一种快速驱动数据线的液晶显示装置。可以在不改变移位寄存器操作时钟的频率的情况下增加信号寄存器输出信号的频率。如果移位寄存器输出信号通过模拟开关用于确定视频信号采样定时，则可实现高速数据线驱动。此外，如果使用上述移位寄存器的输出信号来确定数字驱动器中的视频信号锁存定时，则可以实现视频信号的高速锁存。因此，即使液晶显示矩阵的驱动电路由TFT构成，也可以在不增加功耗的情况下驱动电路的高速运转。移位寄存器也可用于检查数据线和模拟开关的电气特性。

6. 发明授权

US6023260A Liquid crystal display device, driving method for liquid crystal display devices, and inspection method for liquid crystal display devices 失效
标题翻译：液晶显示装置，液晶显示装置的驱动方法以及液晶显示装置的检查方法
公开(公告)号：US6023260A
公开(公告)日：2000-02-08
申请号：US714170
申请日：1996-09-27
申请人： Seiichiro Higashi
发明人： Seiichiro Higashi
IPC分类号： G09G3/20 , G09G3/36
CPC分类号： G09G3/3611 , G09G3/2011 , G09G3/3648 , G09G3/3688 , G09G2300/0408 , G09G2310/027 , G09G2310/0281 , G09G2310/0286 , G09G2310/0297 , G09G2310/08 , G09G2330/021 , G09G2330/12 , G09G3/006
摘要： Using technology which uses a single shift register and simultaneously generates multiple pulses, this invention is a liquid crystal display device which rapidly drives data lines. It is possible to increase the frequency of the shift register output signal without changing the frequency of the shift register operation clock. If the shift register output signals, by means of analog switches, are used to determine the video signal sampling timing, high speed data line driving can be realized. Additionally, if the output signals of the shift register mentioned above are used to determine the video signal latch timing in a digital driver, high speed latching of the video signal can be realized. Consequently, even if the driving circuits of the liquid crystal display matrix are composed of TFTs, high speed operation of the driving circuits is possible without increasing power consumption. The shift register can also be used to inspect the electrical characteristics of the data lines and analog switches.
摘要翻译： PCT No.PCT / JP96 / 00202 Sec。 371日期1996年9月27日第 102（e）1996年9月27日PCT PCT 1996年2月1日PCT公布。公开号WO96 / 24123 日期：1996年8月8日利用单个移位寄存器并同时产生多个脉冲的技术，本发明是快速驱动数据线的液晶显示装置。可以在不改变移位寄存器操作时钟的频率的情况下增加移位寄存器输出信号的频率。如果移位寄存器输出信号通过模拟开关用于确定视频信号采样定时，则可实现高速数据线驱动。此外，如果使用上述移位寄存器的输出信号来确定数字驱动器中的视频信号锁存定时，则可以实现视频信号的高速锁存。因此，即使液晶显示矩阵的驱动电路由TFT构成，也可以在不增加功耗的情况下驱动电路的高速运转。移位寄存器也可用于检查数据线和模拟开关的电气特性。

7. 发明授权

US08704747B2 Liquid crystal display device, driving method for liquid crystal display devices, and inspection method for liquid crystal display devices 失效
标题翻译：液晶显示装置，液晶显示装置的驱动方法以及液晶显示装置的检查方法
公开(公告)号：US08704747B2
公开(公告)日：2014-04-22
申请号：US13079862
申请日：2011-04-05
申请人： Seiichiro Higashi
发明人： Seiichiro Higashi
IPC分类号： G09G3/36
CPC分类号： G09G3/3611 , G09G3/006 , G09G3/2011 , G09G3/3648 , G09G3/3688 , G09G2300/0408 , G09G2310/027 , G09G2310/0281 , G09G2310/0286 , G09G2310/0297 , G09G2310/08 , G09G2330/021 , G09G2330/12
摘要： Using technology which uses a single shift register and simultaneously generates multiple pulses, this invention is a liquid crystal display device which rapidly drives data lines. It is possible to increase the frequency of the shift register output signal without changing the frequency of the shift register operation clock. If the shift register output signals, by means of analog switches, are used to determine the video signal sampling timing, high speed data line driving can be realized. Additionally, if the output signals of the shift register mentioned above are used to determine the video signal latch timing in a digital driver, high speed latching of the video signal can be realized. Consequently, even if the driving circuits of the liquid crystal display matrix are composed of TFTs, high speed operation of the driving circuits is possible without increasing power consumption. The shift register can also be used to inspect the electrical characteristics of the data lines and analog switches.
摘要翻译：采用使用单个移位寄存器并同时产生多个脉冲的技术，本发明是快速驱动数据线的液晶显示装置。可以在不改变移位寄存器操作时钟的频率的情况下增加移位寄存器输出信号的频率。如果移位寄存器输出信号通过模拟开关用于确定视频信号采样定时，则可实现高速数据线驱动。此外，如果使用上述移位寄存器的输出信号来确定数字驱动器中的视频信号锁存定时，则可以实现视频信号的高速锁存。因此，即使液晶显示矩阵的驱动电路由TFT构成，也可以在不增加功耗的情况下驱动电路的高速运转。移位寄存器也可用于检查数据线和模拟开关的电气特性。

8. 发明申请

US20100155808A1 SEMICONDUCTOR MEMORY, SEMICONDUCTOR MEMORY SYSTEM USING THE MEMORY, AND METHOD FOR MANUFACTURING QUANTUM DOT USED IN SEMICONDUCTOR MEMORY 有权
标题翻译：半导体存储器，使用存储器的半导体存储器系统以及用于制造半导体存储器中使用的量子点的方法
公开(公告)号：US20100155808A1
公开(公告)日：2010-06-24
申请号：US12600986
申请日：2008-03-26
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
IPC分类号： H01L29/788 , H01L21/4763
CPC分类号： H01L29/42332 , B82Y10/00 , H01L21/28273 , H01L29/7881
摘要： A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.
摘要翻译：半导体存储器具有复合浮动结构，其中由Si构成的量子点并且涂覆有氧化硅薄膜，沉积在形成于半导体衬底上的绝缘膜上，涂覆有高介电常数绝缘膜的量子点沉积在量子点和由Si构成并涂覆有高介电常数绝缘膜的量子点进一步沉积。每个量子点包括芯层和覆盖芯层的覆层。芯层中的电子占有量低于包层中的电子占有量。

9. 发明授权

US07271793B2 Liquid crystal display device, driving method for liquid crystal display devices, and inspection method for liquid crystal display devices 有权
标题翻译：液晶显示装置，液晶显示装置的驱动方法以及液晶显示装置的检查方法
公开(公告)号：US07271793B2
公开(公告)日：2007-09-18
申请号：US10026905
申请日：2001-12-27
申请人： Seiichiro Higashi
发明人： Seiichiro Higashi
IPC分类号： G09G3/36
CPC分类号： G09G3/3611 , G09G3/006 , G09G3/2011 , G09G3/3648 , G09G3/3688 , G09G2300/0408 , G09G2310/027 , G09G2310/0281 , G09G2310/0286 , G09G2310/0297 , G09G2310/08 , G09G2330/021 , G09G2330/12
摘要： Using technology which uses a single shift register and simultaneously generates multiple pulses, this invention is a liquid crystal display device which rapidly drives data lines. It is possible to increase the frequency of the shift register output signal without changing the frequency of the shift register operation clock. If the shift register output signals, by means of analog switches, are used to determine the video signal sampling timing, high speed data line driving can be realized. Additionally, if the output signals of the shift register mentioned above are used to determine the video signal latch timing in a digital driver, high speed latching of the video signal can be realized. Consequently, even if the driving circuits of the liquid crystal display matrix are composed of TFTs, high speed operation of the driving circuits is possible without increasing power consumption. The shift register can also be used to inspect the electrical characteristics of the data lines and analog switches.
摘要翻译：采用使用单个移位寄存器并同时产生多个脉冲的技术，本发明是快速驱动数据线的液晶显示装置。可以在不改变移位寄存器操作时钟的频率的情况下增加移位寄存器输出信号的频率。如果移位寄存器输出信号通过模拟开关用于确定视频信号采样定时，则可实现高速数据线驱动。此外，如果使用上述移位寄存器的输出信号来确定数字驱动器中的视频信号锁存定时，则可以实现视频信号的高速锁存。因此，即使液晶显示矩阵的驱动电路由TFT构成，也可以在不增加功耗的情况下驱动电路的高速运转。移位寄存器也可用于检查数据线和模拟开关的电气特性。

10. 发明申请

US20100308328A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100308328A1
公开(公告)日：2010-12-09
申请号：US12599638
申请日：2007-12-06
申请人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
发明人： Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi , Hideki Murakami
IPC分类号： H01L29/792 , H01L29/02
CPC分类号： H01L21/28273 , B82Y10/00 , G11C16/0408 , G11C16/0441 , H01L29/42332 , H01L29/66825
摘要： A semiconductor device has a floating gate structure in which charge storage layers are stacked on a SiO2 layer formed on a substrate made of n-type Si. The charge storage layer has quantum dots made of undoped Si and an oxide layer that covers the quantum dots. The charge storage layer has quantum dots made of n+-Si and an oxide layer that covers the quantum dots. Electrons originally existing in the quantum dots migrate between the quantum dots and the quantum dots via tunnel junction and are distributed in the quantum dots and/or the quantum dots according to the voltage applied to a gate electrode via pads. The distribution is detected in the form of a current (ISD).
摘要翻译：半导体器件具有浮栅结构，其中电荷存储层层叠在形成在由n型Si制成的衬底上的SiO 2层上。电荷存储层具有由未掺杂的Si构成的量子点和覆盖量子点的氧化物层。电荷存储层具有由n + -Si构成的量子点和覆盖量子点的氧化物层。最初存在于量子点中的电子经由隧道结在量子点和量子点之间迁移，并且根据通过焊盘施加到栅电极的电压而分布在量子点和/或量子点中。以电流（ISD）的形式检测分布。

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