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1. 发明授权

US4962413A Analog switch with minimized noise ascribable to gate capacitance 失效
标题翻译：具有归因于栅极电容的最小化噪声的模拟开关
公开(公告)号：US4962413A
公开(公告)日：1990-10-09
申请号：US230234
申请日：1988-08-09
申请人： Seiichi Yamazaki , Hiroaki Inoue , Sumihiro Takashima , Hiroshisa Shishikura
发明人： Seiichi Yamazaki , Hiroaki Inoue , Sumihiro Takashima , Hiroshisa Shishikura
IPC分类号： H01L29/78 , G02F1/136 , G02F1/1368 , G11C27/02 , H01L21/8234 , H01L27/088 , H01L27/092 , H03K17/14 , H03K17/16 , H03K17/687
CPC分类号： H03K17/145 , H01L27/092 , H03K17/162
摘要： An analog switch includes n-channel and p-channel MOSFETs formed in a surface of a semiconductor substrate. Each of the n-channel and p-channel MOSFETs has first, second and third diffused regions which are formed in the semiconductor surface with the width thereof substantially equal to each other. The first and third diffused regions are spaced from the second diffused region to form first and second channel regions, respectively. Each of the n-channel and p-channel MOSFETs has first and second gate electrodes which are interconnected in common to each other and placed on respective gate insulating layers overlaying the first and second channel regions, respectively. The first gate electrode has an end portion extending over part of the second diffused region by a predetermined length, while the second gate electrode has an end portion extending over another part, opposite to the earlier-mentioned part, of the second diffused region by a predetermined length. A sample and hold circuit including the analog switch is also provided.
摘要翻译：模拟开关包括形成在半导体衬底的表面中的n沟道和p沟道MOSFET。 n沟道和p沟道MOSFET中的每一个具有第一，第二和第三扩散区，其形成在半导体表面中，其宽度基本上彼此相等。第一和第三扩散区域与第二扩散区域分开形成第一和第二通道区域。 n沟道和p沟道MOSFET中的每一个具有第一和第二栅电极，这些第一和第二栅极电极彼此共同互连并分别放置在覆盖第一和第二沟道区的相应的栅极绝缘层上。第一栅极电极具有在第二扩散区域的一部分上延伸预定长度的端部，而第二栅电极具有在第二扩散区域的与较早提及的部分相对的另一部分上延伸的端部，预定长度。还提供了包括模拟开关的采样和保持电路。

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