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1. 发明申请

US20130033937A1 METHODS FOR PROGRAM VERIFYING A MEMORY CELL AND MEMORY DEVICES CONFIGURED TO PERFORM THE SAME 有权
标题翻译：用于程序验证存储器单元的方法和配置为执行其的存储器件
公开(公告)号：US20130033937A1
公开(公告)日：2013-02-07
申请号：US13204029
申请日：2011-08-05
申请人： Seiichi Aritome , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
发明人： Seiichi Aritome , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454
摘要： A method for program verify is disclosed, such as one in which a threshold voltage of a memory cell that has been biased with a programming voltage can be determined and its relationship with multiple program verify voltage ranges can be determined. The program verify voltage range in which the threshold voltage is located determines the subsequent bit line voltage. The subsequent bit line voltage may be less than a previous bit line voltage used to program the memory cell.
摘要翻译：公开了一种用于程序验证的方法，例如可以确定已经用编程电压偏置的存储器单元的阈值电压并且可以确定其与多个程序验证电压范围的关系的方法。程序验证阈值电压所在的电压范围决定后续的位线电压。随后的位线电压可以小于用于对存储器单元进行编程的先前位线电压。

2. 发明授权

US08670273B2 Methods for program verifying a memory cell and memory devices configured to perform the same 有权
标题翻译：用于程序验证被配置为执行相同的存储器单元和存储器件的方法
公开(公告)号：US08670273B2
公开(公告)日：2014-03-11
申请号：US13204029
申请日：2011-08-05
申请人： Seiichi Aritome , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
发明人： Seiichi Aritome , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
IPC分类号： G11C11/34
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454
摘要： A method for program verify is disclosed, such as one in which a threshold voltage of a memory cell that has been biased with a programming voltage can be determined and its relationship with multiple program verify voltage ranges can be determined. The program verify voltage range in which the threshold voltage is located determines the subsequent bit line voltage. The subsequent bit line voltage may be less than a previous bit line voltage used to program the memory cell.
摘要翻译：公开了一种用于程序验证的方法，例如可以确定已经用编程电压偏置的存储器单元的阈值电压并且可以确定其与多个程序验证电压范围的关系的方法。程序验证阈值电压所在的电压范围决定后续的位线电压。随后的位线电压可以小于用于对存储器单元进行编程的先前位线电压。

3. 发明授权

US08619475B2 Methods to operate a memory cell 有权
标题翻译：操作存储单元的方法
公开(公告)号：US08619475B2
公开(公告)日：2013-12-31
申请号：US13204014
申请日：2011-08-05
申请人： Seiichi Aritome , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
发明人： Seiichi Aritome , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
IPC分类号： G11C11/34
CPC分类号： G11C16/3404 , G11C11/5628 , G11C16/3459
摘要： Memory devices and methods for operating a memory cell are disclosed, such as a method that uses two program verify levels (e.g., low program verify level and program verify level) to determine how a data line voltage should be increased. A threshold voltage of a memory cell that has been biased with a programming voltage is determined and its relationship with the two program verify levels is determined. If the threshold voltage is less than the low program verify level, the data line can be biased at a ground voltage (e.g., 0V) for a subsequent programming pulse. If the threshold voltage is greater than the program verify level, the data line can be biased at an inhibit voltage for a subsequent programming pulse. If the threshold voltage is between the two program verify levels, the data line voltage can be increased for each subsequent programming pulse in which the threshold voltage is between the two program verify levels.
摘要翻译：公开了用于操作存储器单元的存储器件和方法，诸如使用两个程序验证电平（例如，低程序验证电平和程序验证电平）来确定如何增加数据线电压的方法。确定已经用编程电压偏置的存储单元的阈值电压，并确定其与两个程序验证电平的关系。如果阈值电压小于低编程验证电平，则可以将数据线偏置在接地电压（例如0V）以用于随后的编程脉冲。如果阈值电压大于程序验证电平，则数据线可以被偏置在用于后续编程脉冲的禁止电压。如果阈值电压在两个程序验证电平之间，则对于其中阈值电压在两个程序验证电平之间的每个后续编程脉冲，可以增加数据线电压。

4. 发明申请

US20130033936A1 METHODS TO OPERATE A MEMORY CELL 有权
标题翻译：操作记忆体的方法
公开(公告)号：US20130033936A1
公开(公告)日：2013-02-07
申请号：US13204014
申请日：2011-08-05
申请人： Seiichi ARITOME , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
发明人： Seiichi ARITOME , Soojin Wi , Angelo Visconti , Silvia Beltrami , Christian Monzio Compagnoni , Alessandro Sottocornola Spinelli
IPC分类号： G11C16/10 , G11C16/04
CPC分类号： G11C16/3404 , G11C11/5628 , G11C16/3459
摘要： Memory devices and methods for operating a memory cell are disclosed, such as a method that uses two program verify levels (e.g., low program verify level and program verify level) to determine how a data line voltage should be increased. A threshold voltage of a memory cell that has been biased with a programming voltage is determined and its relationship with the two program verify levels is determined. If the threshold voltage is less than the low program verify level, the data line can be biased at a ground voltage (e.g., 0V) for a subsequent programming pulse. If the threshold voltage is greater than the program verify level, the data line can be biased at an inhibit voltage for a subsequent programming pulse. If the threshold voltage is between the two program verify levels, the data line voltage can be increased for each subsequent programming pulse in which the threshold voltage is between the two program verify levels.
摘要翻译：公开了用于操作存储器单元的存储器件和方法，诸如使用两个程序验证电平（例如，低程序验证电平和程序验证电平）来确定如何增加数据线电压的方法。确定已经用编程电压偏置的存储单元的阈值电压，并确定其与两个程序验证电平的关系。如果阈值电压小于低编程验证电平，则可以将数据线偏置在接地电压（例如0V）以用于随后的编程脉冲。如果阈值电压大于程序验证电平，则数据线可以被偏置在用于后续编程脉冲的禁止电压。如果阈值电压在两个程序验证电平之间，则对于其中阈值电压在两个程序验证电平之间的每个后续编程脉冲，可以增加数据线电压。

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