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    • 3. 发明授权
    • Thin film ferromagnetic resonance tuned filter
    • 薄膜铁磁谐振调谐滤波器
    • US4945324A
    • 1990-07-31
    • US326430
    • 1989-03-17
    • Yoshikazu MurakamiTakahiro OhgiharaKanako NiikuraYasuyuki MizunumaHiroyuki Nakano
    • Yoshikazu MurakamiTakahiro OhgiharaKanako NiikuraYasuyuki MizunumaHiroyuki Nakano
    • H01P1/218
    • H01P1/218
    • In a thin film ferromagnetic resonance tuned filter is disclosed which comprises a ferrimagnetic thin films, input and output signal transmission lines respectively coupled with the ferrimagnetic thin films, and a magnetic circuit for applying a DC magnetic field to the ferrimagnetic thin films, the present invention expands the variable frequency band by forming extensions each extending from the signal transmission line so that the distance from the coupling point of the signal transmission line coupled with the corresponding ferrimagnetic thin film to the grounded end thereof is 1/10 or above and less than 1/4 the wavelength of a wave transmitted in the transmission lines at the upper limit frequency of a tuning frequency band. Further the deterioration of the isolation characteristics is suppressed by bending the extended portions not to form parallel portions to another transmission line.
    • 本发明公开了一种薄膜铁磁谐振调谐滤波器,其包括铁氧体薄膜,分别与铁磁薄膜耦合的输入和输出信号传输线以及用于向铁磁性薄膜施加直流磁场的磁路 通过形成从信号传输线延伸的扩展扩展可变频带,使得从与相应的铁磁性薄膜耦合到其接地端的信号传输线的耦合点的距离为1/10以上且小于1 / 4是在调谐频带的上限频率处在传输线中传输的波的波长。 此外,通过弯曲延伸部分而不形成平行部分到另一传输线来抑制隔离特性的劣化。
    • 7. 发明授权
    • Ferromagnetic resonator
    • 铁磁谐振器
    • US4679015A
    • 1987-07-07
    • US844984
    • 1986-03-27
    • Yoshikazu MurakamiSeigo ItoHiromi OkamotoHideo Tanaka
    • Yoshikazu MurakamiSeigo ItoHiromi OkamotoHideo Tanaka
    • H01P5/08H01P1/218H01P7/08
    • H01P1/218
    • A ferromagnetic resonator comprises a nonmagnetic substrate, a ferrimagnetic thin film element formed on a major surface of the nonmagnetic substrate, a strip line for example formed on another major surface of the nonmagnetic substrate and electromagnetically coupled to the ferrimagnetic thin film element, a conductive wall facing the strip line and spaced therefrom a predetermined distance, an end of the strip line being connected by the conductive wall to ground potential and a bias magnetic field source applying a D.C. magnetic field to the ferrimagnetic thin film perpendicular to the major surface thereof. Such an arrangement enables a drastic reduction in the effective dielectric constant of the transmission lines, whereby a filter with a high center frequency of the order of at least ten gigahertz can be achieved despite the short type structure.
    • 铁磁谐振器包括非磁性衬底,形成在非磁性衬底的主表面上的铁磁性薄膜元件,例如形成在非磁性衬底的另一个主表面上并与电磁耦合到铁氧体薄膜元件的导电壁 面对带状线并与之隔开预定距离,带状线的端部由导电壁连接到接地电位,偏置磁场源将垂直于其主表面的铁磁性薄膜施加直流磁场。 这种布置使得能够大大降低传输线的有效介电常数,由此尽管具有短型结构,但是可以实现具有至少十千兆赫数量级的高中心频率的滤波器。
    • 10. 发明授权
    • YIG thin film microwave apparatus
    • YIG薄膜微波设备
    • US4746884A
    • 1988-05-24
    • US883603
    • 1986-07-09
    • Yoshikazu MurakamiHideo TanakaMasami MiyakeSeigo ItoHitoshi TamadaToshiro Yamada
    • Yoshikazu MurakamiHideo TanakaMasami MiyakeSeigo ItoHitoshi TamadaToshiro Yamada
    • H01F10/24H01P1/218H01P7/00H01P7/08
    • H01P1/218H01F10/245
    • Disclosed is a YIG thin film device utilizing ferrimagnetic resonance effect, a magnetic circuit having a gap of length lg where the YIG thin film device being provided and applying a bias magnetic field perpendicular to a film surface of the YIG thin film device, the magnetic circuit including a permanent magnet having a thickness lm and a soft magnetic plate having a thickness lx, the permanent magnet satisfying the characteristics ##EQU1## the soft magnetic plate satisfying the characteristics ##EQU2## wherein fo is resonance frequency of the YIG thin film device,.gamma. is gyromagnetic ratio of the YIG thin filmNz.sup.Y is demagnetization factor of the YIG thin film4.pi.Mso.sup.Y is saturation magnetization of the YIG thin film at room temperature,4.pi.Mso.sup.x is saturation magnetization of the soft magnetic plate,Br.sup.o is remanence of the permanent magnet at room temperature,.alpha..sub.1.sup.B is first order temperature coefficient of the remanence of the permanent magnet near room temperature,.alpha..sub.1.sup.Y is first order temperature coefficient of the saturation magnetization of the YIG thin film near room temperature,.alpha..sub.1.sup.x is first order temperature coefficient of the saturation magnetization of the soft magnetic plate near room temperatureand, the thickness lm and lx being selected to improve temperature dependency of the resonance frequency.
    • 公开了利用亚铁磁共振效应的YIG薄膜器件,具有长度为lg的间隙的磁路,其中设置了YIG薄膜器件,并施加垂直于YIG薄膜器件的膜表面的偏置磁场,磁路 包括具有厚度lm的永磁体和厚度为lx的软磁性板,所述永磁体满足特性Bro>(fo / gamma)+ NzY4 pi MsoY< IMAGE>软磁性板满足特性4 pi MsoX fo / gamma)+ NzY4 pi MsoY 其中fo是YIG薄膜器件的谐振频率,γ是YIG薄膜的回磁比NzY是YIG薄膜4的去磁因子pi MsoY是YIG的饱和磁化 薄膜在室温下,4 pi Msox是软磁板的饱和磁化,Bro是永磁体在室温下的剩磁,α1B是一级温度系数 永久磁铁在室温附近的剩余磁通量α1Y是在室温附近的YIG薄膜的饱和磁化强度的一阶温度系数,α1x是软磁板在室内的饱和磁化强度的一阶温度系数 温度,并且选择厚度lm和lx以改善谐振频率的温度依赖性。