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    • 3. 发明申请
    • Quantum computing device and using method thereof
    • 量子计算装置及其使用方法
    • US20110148441A1
    • 2011-06-23
    • US10539753
    • 2003-12-22
    • Tsuyoshi YamamotoJaw-Shen Tsai
    • Tsuyoshi YamamotoJaw-Shen Tsai
    • H01L47/00G01R27/26B82Y10/00
    • H01L39/223B82Y10/00G06N10/00
    • With a simple circuit configuration which does not conduct high frequency signal processing, a quantum computing device, a quantum bit readout processing unit of the quantum computing device, and a quantum bit readout processing method are provided. By controlling a quantum bit structure, which is formed with a counter electrode coupling with a quantum box electrode through a first tunnel barrier, with a gate voltage, a Cooper-pair extracted from the quantum box electrode after computation is accumulated in a trap electrode coupling with the quantum bit structure by sandwiching a second tunnel barrier. By coupling the trap electrode and an island electrode of a readout single electron transistor through a static capacitance, a change of electric charge in the trap electrode is read out as a direct current value of the single electron transistor.
    • 通过不进行高频信号处理的简单的电路结构,提供量子计算装置,量子计算装置的量子比特读出处理部和量子比特读出处理方法。 通过控制通过第一隧道势垒与栅极电压与量子箱电极耦合的对电极形成的量子位结构,计算后从量子箱电极提取的Cooper对积聚在陷阱电极耦合 具有通过夹持第二隧道势垒的量子比特结构。 通过将捕获电极和读出的单电子晶体管的岛电极通过静电电容耦合,将捕获电极中的电荷变化作为单电子晶体管的直流电流值读出。
    • 7. 发明授权
    • Nonvolatile memory
    • 非易失性存储器
    • US06507509B1
    • 2003-01-14
    • US09856913
    • 2001-08-17
    • Youichi OhtsukaJunichi SoneJaw-Shen TsaiTakanari YasuiYasunobu Nakamura
    • Youichi OhtsukaJunichi SoneJaw-Shen TsaiTakanari YasuiYasunobu Nakamura
    • G11C1122
    • B82Y10/00G11C11/22G11C11/5657H01L27/11502H01L29/7613H01L29/78391H01L29/7888
    • High device reliability, a reduction in power consumption, and a high operation speed are achieved. When a predetermined bias voltage is applied between a source 1 and a drain 2 to change a gate voltage, a current discretely flows between the source 1 and the drain 2 in accordance with quantized electrostatic energy levels in an island electrode 3. The switching ON/OFF of the current between the source 1 and the drain 2 in this case is enabled by applying ½-electron charge to a gate. When the gate voltage induces polarization in a ferroelectric layer 6, its electric field is applied to the island electrode 3. The current between the source 1 and the drain 2 in this case can be measured with high sensitivity. Charge holding is carried out by the polarization in the ferroelectric layer 6, and stored data can be held even if power supply is cut off.
    • 实现了高的设备可靠性,功耗的降低和高的运行速度。 当在源极1和漏极2之间施加预定的偏置电压以改变栅极电压时,根据岛状电极3中的量化的静电能量水平,电流离散地流过源极1和漏极2之间。开关导通/ 在这种情况下,源1和漏极2之间的电流的截止通过向栅极施加1/2电子电荷来实现。 当栅极电压在铁电层6中引起极化时,其电场被施加到岛状电极3.在这种情况下,源1和漏极2之间的电流可以高灵敏度地测量。 通过强电介质层6中的极化进行电荷保持,即使电源被切断,也可以保持存储的数据。