专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JP2008294016A Ceramics substrate and semiconductor manufacturing apparatus provided with the same 审中-公开
标题翻译：陶瓷基板和半导体制造设备
公开(公告)号：JP2008294016A
公开(公告)日：2008-12-04
申请号：JP2007134930
申请日：2007-05-22
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/205 , C23C16/44 , H01L21/02 , H01L21/3065
摘要： PROBLEM TO BE SOLVED: To provide a ceramic substrate for a semiconductor manufacturing apparatus, especially a shower substrate, wherein the connection structure of electrodes is greatly improved so as to enhance throughput of a semiconductor process.
SOLUTION: The ceramics substrate 1 is arranged within the chamber of a semiconductor manufacturing apparatus, and a conductor 2 is embedded inside itself. It is provided with an electrode member 3 for external terminal connection that is connected with the conductor 2, a conductive cover member 4 that is connected with the electrode member 3 and covers the same, and an O-ring 5 that prevents the electrode member 3 covered with the cover member 4 from being exposed to an atmosphere within the chamber. The electrode member 3 and the ceramics substrate 1, and the electrode member 3 and the cover member 4 are mechanically joined with each other by screws, respectively.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种用于半导体制造装置的陶瓷基板，特别是喷淋基板，其中电极的连接结构大大提高，以提高半导体工艺的生产率。解决方案：陶瓷基板1布置在半导体制造装置的腔室内，导体2嵌入其内部。设置有与导体2连接的用于外部端子连接的电极部件3，与电极部件3连接并覆盖电极部件3的导电性盖部件4和防止电极部件3的O形环5 被覆盖件4覆盖以暴露在室内的气氛中。电极构件3和陶瓷基板1以及电极构件3和盖构件4分别通过螺钉彼此机械地接合。版权所有（C）2009，JPO＆INPIT

2. 发明专利

JP2008182129A Wafer holder for semiconductor manufacturing device, method of manufacturing same, and semiconductor manufacturing device on which same is mounted 有权
标题翻译：用于半导体制造装置的制造方法，制造方法及其安装的半导体制造装置
公开(公告)号：JP2008182129A
公开(公告)日：2008-08-07
申请号：JP2007015684
申请日：2007-01-26
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/205 , H01L21/683 , H05H1/46
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder that generates uniform plasma on a wafer, and forms a uniform thickness film on the entire surface of the wafer meeting the recent semiconductor microfabrication. SOLUTION: This invention relates to the wafer holder wherein a high frequency generating electrode is buried in a ceramics sintered body, and a distance between the high frequency generating electrode and a wafer mounting surface is not definite. The indefinite distance means that the distance from the high frequency generating electrode to a wafer mounting surface may be long or short in a direction from a center of the wafer mounting surface to an end thereof. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供在晶片上产生均匀等离子体的晶片保持器，并且在满足最近的半导体微细加工的晶片的整个表面上形成均匀的厚度膜。解决方案：本发明涉及高频发生电极埋在陶瓷烧结体中的晶片保持器，高频发生电极和晶片安装面之间的距离不明确。不确定距离意味着从高频产生电极到晶片安装表面的距离可以在从晶片安装表面的中心到其一端的方向上长或短。版权所有（C）2008，JPO＆INPIT

3. 发明专利

JP2008171967A Semiconductor heater 有权
标题翻译：半导体加热器
公开(公告)号：JP2008171967A
公开(公告)日：2008-07-24
申请号：JP2007002987
申请日：2007-01-11
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/02 , C23C16/46 , H01L21/027 , H01L21/205 , H05B3/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor heater capable of carrying out the process of a semiconductor wafer safely until high temperatures even if there is leakage current.
SOLUTION: A resistance heat generating element 3 for a ceramics heater 2 is connected to an AC power supply 6 through an insulating transformer 5 and a leakage current breaker 7 is provided between the resistance heat generating element 3 and the insulating transformer 5 so as to be capable of being connected to an earth between the insulating transformer 5 and the leakage current breaker 7 through a magnet switch 8. When the lid 1a of a chamber 1 is closed, the magnet switch 8 is put off and the same is not connected to the earth but when the lid 1a is opened, the magnet switch 8 is put on by the signal of a limit switch 9 and the resistance heat generating element 3 is connected to the earth.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够安全地进行半导体晶片的处理的半导体加热器，即使存在漏电流也能够高温。解决方案：用于陶瓷加热器2的电阻发热元件3通过绝缘变压器5连接到AC电源6，并且在电阻发热元件3和绝缘变压器5之间设置泄漏电流断路器7，因此能够通过磁性开关8与绝缘变压器5和泄漏电流断路器7之间的接地连接。当室1的盖1a关闭时，磁性开关8被断开，同样不会连接到地球，但是当盖1a打开时，磁开关8被限位开关9的信号接通，电阻发热元件3连接到地。版权所有（C）2008，JPO＆INPIT

4. 发明专利

JP2008153414A Wafer holder attaching structure 审中-公开
标题翻译：砂轮架连接结构
公开(公告)号：JP2008153414A
公开(公告)日：2008-07-03
申请号：JP2006339419
申请日：2006-12-18
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/683 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a wafer holder attaching structure having high reliability, with which a cylindrical supporting member supporting a wafer can be surely attached on a chamber in attaching it. SOLUTION: The attaching structure is provided with a supporting part 3 for supporting a lower end portion of a cylindrical supporting member 1 supporting the wafer holder and having a cylindrical portion 3a for covering at least one part of the external circumference of the lower end portion; a ring-like fixing member 4 disposed between the supporting part 3 and the cylindrical supporting member 1 and attached on a flange portion 1a provided on the external circumference of the lower end portion of the cylindrical supporting member 1. A male screw formed on the external circumference of the ring-like fixing member 4 is mated with a female screw formed on the cylindrical portion 3a of the supporting part 3, and a lower end protruding portion 3b of the supporting member 3 is attached on the chamber 2. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：解决的问题：提供一种具有高可靠性的晶片保持器安装结构，其中支撑晶片的圆柱形支撑构件可以可靠地附着在安装在室上的腔室中。解决方案：安装结构设置有用于支撑支撑晶片保持器的圆柱形支撑构件1的下端部的支撑部3，并且具有用于覆盖下部的外周的至少一部分的圆筒部3a 端部; 设置在支撑部3和圆筒状支撑构件1之间的环状固定构件4，其安装在设置在圆筒状支撑构件1的下端部的外周上的凸缘部1a上。形成在外部环形固定构件4的周边与形成在支撑部3的圆筒部3a上的内螺纹配合，支撑构件3的下端突出部3b安装在腔室2上。（C）2008，JPO＆INPIT

5. 发明专利

JP2008153413A Supporting structure of wafer holder 审中-公开
标题翻译：支持水晶架的结构
公开(公告)号：JP2008153413A
公开(公告)日：2008-07-03
申请号：JP2006339418
申请日：2006-12-18
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/683 , C23C16/44
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable supporting structure of a wafer holder, capable of preventing damage of a wafer holder in addition to uniformly heating a wafer. SOLUTION: The supporting structure supports a wafer holder 1 having an electric circuit embedded in a ceramic sintered body or on its surface with a cylindrical supporting member 3. In the supporting structure, a flange part 2 having a thread formed thereon is attached on the wafer holder 1 with a plurality of screws 4, and a thread provided on the cylindrical supporting member 3 is mated with the thread of the flange part 2. The cylindrical supporting member 3 mated with the flange part 2 is fixed with rotation preventing pins 5. COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供晶片保持器的高度可靠的支撑结构，除了均匀加热晶片之外，还能够防止晶片保持器的损坏。
解决方案：支撑结构支撑具有嵌入在陶瓷烧结体中的电路或其表面上的圆柱形支撑构件3的晶片保持器1。在支撑结构中，附接有形成在其上的螺纹的凸缘部2 在具有多个螺钉4的晶片保持器1上，并且设置在圆筒形支撑构件3上的螺纹与凸缘部分2的螺纹配合。与凸缘部分2配合的圆柱形支撑构件3固定有防旋转销 5.版权所有（C）2008，JPO＆INPIT

6. 发明专利

JP2008294017A Shower head and semiconductor manufacturing apparatus provided with the same 审中-公开
标题翻译：淋浴头和半导体制造设备提供
公开(公告)号：JP2008294017A
公开(公告)日：2008-12-04
申请号：JP2007134931
申请日：2007-05-22
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/3065 , C23C16/455 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a shower head that can be manufactured by simple process at low cost and is hard to be broken due to thermal stress.
SOLUTION: The shower head is used to jet to a wafer a gas to be introduced to the semiconductor manufacturing apparatus, and a ceramics plate 1 having a plurality of through holes and a metal supporting body 2 for holding the ceramics plate 1 are mechanically joined with each other by a spring 3. A conductive layer in the ceramics plate 1 can be electrically connected with the spring 3 and the metal supporting body 2. The spring 3 is a plate spring that is punched out by laser processing or electrical discharge machining, and both thickness and spring width thereof are preferably 0.3-2.0 mm.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种可以通过简单的方法以低成本制造并且由于热应力而难以破坏的喷头。解决方案：喷头用于向晶片喷射要引入半导体制造装置的气体，并且具有多个通孔的陶瓷板1和用于保持陶瓷板1的金属支撑体2是通过弹簧3彼此机械地接合。陶瓷板1中的导电层可以与弹簧3和金属支撑体2电连接。弹簧3是通过激光加工或放电冲压的板簧机械加工，其厚度和弹簧宽度优选为0.3〜2.0mm。版权所有（C）2009，JPO＆INPIT

7. 发明专利

JP2008270400A Wafer holder for semiconductor manufacturing device and semiconductor manufacturing device mounting the same 审中-公开
标题翻译：半导体制造装置用半导体制造装置及其安装用半导体制造装置
公开(公告)号：JP2008270400A
公开(公告)日：2008-11-06
申请号：JP2007109072
申请日：2007-04-18
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/683 , C04B35/581 , C23C16/458 , H01L21/205
摘要： PROBLEM TO BE SOLVED: To provide a highly reliable connection structure without causing liquid leakage even if a wafer holder is used for a long term, concerning the wafer holder internally having a flow passage for allowing fluid to flow. SOLUTION: The wafer holder where the flow passage for allowing the fluid to flow is internally formed includes: a pipe member connected to the flow passage so as to supply the fluid from an external part and to discharge the fluid; female screws formed on inner peripheral surfaces close to both ends of the flow passage; male screws formed close to the tip of the pipe member; a flange arranged at an end opposite to the tip of the pipe member of the male screw; and an O-ring inserted from the tip of the pipe member and abutted on the flange. It is preferable that surface coarseness in each contact surface contacting with the O-ring in the wafer holder and the flange is ≤2.0 μm by Ra. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：即使长期使用晶片保持器，即使在内部具有用于允许流体流动的流动通道的晶片保持架上，也可以提供高度可靠的连接结构，而不会导致液体泄漏。解决方案：用于允许流体流动的流动通道的晶片保持器在内部形成包括：连接到流动通道以从外部供应流体并排出流体的管构件; 内螺纹形成在靠近流路两端的内周面上; 外螺纹形成在管件前端附近; 凸缘，其布置在与所述阳螺纹的管构件的前端相对的端部处; 以及从管构件的尖端插入并邻接在凸缘上的O形环。优选地，与晶片保持器和凸缘中的O形环接触的每个接触表面中的表面粗糙度优选为Ra≤2.0μm。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008118080A Heating body and semiconductor manufacturing apparatus mounted with the same 有权
标题翻译：加热体和半导体制造装置
公开(公告)号：JP2008118080A
公开(公告)日：2008-05-22
申请号：JP2006302555
申请日：2006-11-08
申请人： Sei Hybrid Kk , Seiハイブリッド株式会社 , Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： NATSUHARA MASUHIRO , AWAZU TOMOYUKI
IPC分类号： H01L21/66 , C23C16/46 , H01L21/02 , H01L21/205 , H05B3/74
摘要： PROBLEM TO BE SOLVED: To provide a heating body having a high temperature rising rate and capable of not only improving throughput but also achieving excellent thermal uniformity also in a transition state of wafer treatment and in a constant state that the wafer is subjected to heat treatment.
SOLUTION: A heating body that heats a wafer comprising a heater 1 comprising a heater substrate 2 and a heating body 3 and a thermal uniformity plate 5 with higher thermal heat conductivity than that of the heater substrate 2, wherein the thermal uniformity plate 5 is fixed at the opposite side of the wafer mounting surface 1a of the heater 1 with a heat insulating layer 4 between. Preferably, a material of the heater substrate 1 is ceramic, or most preferably, an aluminum nitride in particular. In addition, the heat capacity of the heat uniform plate 5 is preferably larger than that of the heater substrate 2 and it is particularly preferable for the material thereof to be copper or an alloy of copper.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：为了提供具有高升温速率的加热体，并且不仅可以提高生产量，而且在晶片处理的过渡状态下以及在晶片经受的恒定状态下也获得优异的热均匀性进行热处理。解决方案：加热包括加热器1的加热器的加热体，该加热器1包括加热器基板2和加热体3以及具有比加热器基板2的热导率高的热导热性的热均匀性板5，其中热均匀性板 5被固定在加热器1的晶片安装表面1a的相对侧，隔热层4在其之间。优选地，加热器基板1的材料特别是陶瓷，或最优选地是氮化铝。此外，热均质板5的热容优选大于加热器基板2的热容，并且特别优选其材料为铜或铜的合金。版权所有（C）2008，JPO＆INPIT

9. 发明专利

JP2012143715A Gas decomposition apparatus and power generating device 有权
标题翻译：气体分解装置和发电装置
公开(公告)号：JP2012143715A
公开(公告)日：2012-08-02
申请号：JP2011004659
申请日：2011-01-13
申请人： Sumitomo Electric Ind Ltd , 住友電気工業株式会社
发明人： HIRAIWA CHIHIRO , FUTAJIMA HIDEAKI , MASHIMA MASATOSHI , YAMAGUCHI ATSUSHI , MIZUHARA NAHO , AWAZU TOMOYUKI
IPC分类号： B01D53/32 , B01D53/58 , B01J19/00 , H01M8/00 , H01M8/02 , H01M8/04 , H01M8/12
CPC分类号： Y02P70/56
摘要： PROBLEM TO BE SOLVED: To prevent external piping, a connecting member connecting this, and a seal structure provided between them from being damaged by heat while being able to improve decomposition efficiency by raising the temperature of gas which flows in a cylindrical MEA (Membrane Electrode Assembly), and further to reduce production cost.SOLUTION: The gas decomposition apparatus is composed by using the cylindrical MEA 7 which includes: a cylindrical solid electrolyte layer; a first electrode layer which is formed to be laminated on an inner periphery of the solid electrolyte layer; and a second electrode layer which is formed to be laminated on an outer periphery of the solid electrolyte layer, and includes: a heating container 51 accommodating and heating the MEA; a projecting portion 41 projecting from the heating container; a connecting member 30 disposed at an opening end portion of the projecting portion; a temperature sensor 73 capable of measuring temperatures of these portions or a temperature of gas flowing in these portions; and a control unit 72 to control so that the temperatures of the projecting portion and the connecting member or the temperature of the gas flowing in these portions may be lower than prescribed temperatures.
摘要翻译：要解决的问题：为了防止外部管道，连接这一点的连接构件和它们之间设置的密封结构被热损坏，同时通过提高在圆柱形MEA中流动的气体的温度来提高分解效率（膜电极组件），进一步降低生产成本。解决方案：气体分解装置由使用圆柱形MEA 7组成，其包括：圆柱形固体电解质层; 第一电极层，被形成为层压在固体电解质层的内周上; 以及第二电极层，其被形成为层压在固体电解质层的外周上，并且包括：容纳并加热MEA的加热容器51; 从加热容器突出的突出部分41; 设置在突出部的开口端部的连接部件30; 能够测量这些部分的温度或在这些部分中流动的气体的温度的温度传感器73; 以及控制单元72，以使得突出部分和连接构件的温度或在这些部分中流动的气体的温度可能低于规定温度。版权所有（C）2012，JPO＆INPIT

10. 发明专利

JP2012132083A Metallic porous body having high corrosion resistance, and method for manufacturing therefor 有权
标题翻译：具有高耐腐蚀性的金属多孔体及其制造方法
公开(公告)号：JP2012132083A
公开(公告)日：2012-07-12
申请号：JP2010287439
申请日：2010-12-24
申请人： Sumitomo Electric Ind Ltd , Toyama Sumitomo Denko Kk , 住友電気工業株式会社 , 富山住友電工株式会社
发明人： OKUNO KAZUKI , KATO MASAHIRO , MASHIMA MASATOSHI , AWAZU TOMOYUKI , SAITO HIDETOSHI , NISHIMURA JUNICHI , SHIRAISHI TAKASHI , TSUCHIDA HITOSHI
IPC分类号： C22C1/08 , C22C1/00 , C22C13/00 , C22C19/03 , C25D1/08 , C25D11/34 , H01M4/66
CPC分类号： Y02E60/12
摘要： PROBLEM TO BE SOLVED: To provide a metallic porous body excellent in an electrolytic resistance and a corrosion resistance suitable to a battery, such as lithium-ion battery, a capacitor and a power collection body for a fuel cell.SOLUTION: The metallic porous body is composed of an alloy containing at least a nickel and a tin. Such metallic porous body is obtained with a method for manufacturing the metallic porous body, composed of the alloy containing at least the nickel and the tin, the method having a step of coating the nickel porous body with a metal containing the tin at least, and a step of diffusing the tin into the nickel porous body by performing a heat-treatment following the former step.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式