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1. 发明申请

US20110163745A1 CONSTRUCTION ELEMENT MADE OF A FERROMAGNETIC SHAPE MEMORY MATERIAL AND USE THEREOF 有权
标题翻译：光致变形记忆材料的构造元件及其使用
公开(公告)号：US20110163745A1
公开(公告)日：2011-07-07
申请号：US12995618
申请日：2009-06-02
申请人： Sebastian Faehler , Michael Thomas , Oleg Heczko , Joerg Buschbeck , Jeffrey Mc Cord
发明人： Sebastian Faehler , Michael Thomas , Oleg Heczko , Joerg Buschbeck , Jeffrey Mc Cord
IPC分类号： G01R33/02 , H01L29/82
CPC分类号： H01L41/12 , F03G7/065 , H01L41/125 , H01L41/20 , H01L41/47
摘要： The invention relates to the field of materials science and relates to a component, which can be used, for example, for microcomponents, microsensors and microactuators. The object of the present invention is to disclose a component in which a clearly greater relative length change occurs. The object is attained through a component of a ferromagnetic shape memory material, produced by a method in which at least one sacrificial layer is applied onto a single-crystalline or biaxially textured substrate, onto which sacrificial layer an epitaxial or textured layer of a ferromagnetic shape memory material with a layer thickness of ≦50 μm is applied, subsequently the sacrificial layer is removed at least partially, and during or after the layer application a structuring at least of the ferromagnetic shape memory material is realized such that an aspect ratio is achieved in which at least one length is greater by at least a factor of 3 than the thickness of the layer or the shortest dimension of the component.
摘要翻译：本发明涉及材料科学领域，涉及可用于例如微型部件，微型传感器和微型致动器的部件。本发明的目的是公开其中发生明显更大的相对长度变化的部件。该目的是通过铁磁形状记忆材料的一个部件来实现的，该方法是通过一种方法产生的，其中至少一个牺牲层被施加到单晶或双轴织构的衬底上，牺牲层上形成铁磁形状的外延或纹理化层施加层厚度为＆lt; nlE;50μm的记忆材料，随后至少部分去除牺牲层，并且在层施加之间或之后，实现至少铁磁形状记忆材料的结构，使得实现纵横比其中至少一个长度比层的厚度或部件的最短尺寸大至少3倍。

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