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1. 发明授权

US07167387B2 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US07167387B2
公开(公告)日：2007-01-23
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

2. 发明授权

US07312392B2 Thermoelectric conversion device, and cooling method and power generating method using the device 有权
标题翻译：热电转换装置，以及使用该装置的冷却方法和发电方法
公开(公告)号：US07312392B2
公开(公告)日：2007-12-25
申请号：US11194685
申请日：2005-08-02
申请人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
发明人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
IPC分类号： H01L35/22
CPC分类号： H01L35/34 , H01L35/22
摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要翻译：本发明提供一种具有高热电转换性能的热电转换装置。在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

3. 发明申请

US20050167699A1 Variable resistance element, method of manufacturing the element, memory containing the element, and method of driving the memory 有权
标题翻译：可变电阻元件，元件的制造方法，包含元件的存储器以及驱动存储器的方法
公开(公告)号：US20050167699A1
公开(公告)日：2005-08-04
申请号：US11061920
申请日：2005-02-22
申请人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
发明人： Yasunari Sugita , Akihiro Odagawa , Hideaki Adachi , Satoshi Yotsuhashi , Tsutomu Kanno , Kiyoshi Ohnaka
IPC分类号： G11C11/56 , G11C13/00 , H01L21/02 , H01L27/24 , H01L45/00
CPC分类号： G11C13/0007 , G11C11/5685 , G11C2213/31 , H01L27/2409 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1246 , H01L45/1273 , H01L45/147 , H01L45/1675
摘要： The present invention lowers a drive voltage of a RRAM, which is a promising low power consumption, high-speed memory and suppresses variations in the width of an electric pulse for realizing a same resistance change. The present invention provides a variable resistance element including: a first electrode; a layer in which its resistance is variable by applying an electric pulse thereto, the layer being formed on the first electrode; and a second electrode formed on the layer; wherein the layer has a perovskite structure; and the layer has at least one selected from depressions and protrusions in an interface with at least one electrode selected from the first electrode and the second electrode.
摘要翻译：本发明降低了作为有希望的低功耗高速存储器的RRAM的驱动电压，并且抑制了用于实现相同电阻变化的电脉冲宽度的变化。本发明提供一种可变电阻元件，包括：第一电极; 通过施加电脉冲使其电阻可变的层，所述层形成在第一电极上; 和形成在该层上的第二电极; 其中所述层具有钙钛矿结构; 并且所述层具有从与所述第一电极和所述第二电极中选择的至少一个电极的界面中的凹陷和突起中选择的至少一个。

4. 发明申请

US20060021646A1 Thermoelectric conversion device, and cooling method and power generating method using the device 有权
标题翻译：热电转换装置，以及使用该装置的冷却方法和发电方法
公开(公告)号：US20060021646A1
公开(公告)日：2006-02-02
申请号：US11194685
申请日：2005-08-02
申请人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
发明人： Satoshi Yotsuhashi , Tsutomu Kanno , Hideaki Adachi , Akihiro Odagawa , Yasunari Sugita
IPC分类号： H01L35/12 , H01L35/28
CPC分类号： H01L35/34 , H01L35/22
摘要： The present invention provides a thermoelectric conversion device having high thermoelectric conversion performance. In this device, electrodes are arranged so that electric current flows in an interlayer direction of a layered substance, unlike the arrangements derived from common knowledge in the art. In the thermoelectric conversion device according to the present invention, a thermoelectric-conversion film is obtained through epitaxial growth and formed by arranging an electrically conducting layer and an electrically insulating layer alternately; the electrically conducting layer has an octahedral crystal structure in which a transition metal atom M is positioned at its center and oxygen atoms are positioned at its vertexes; and the electrically insulating layer includes a metal element or a crystalline metal oxide. The c axis of the layered substance made of the electrically conducting layer and the electrically insulating layer is parallel to an in-plane direction of the substrate, and a pair of electrodes are arranged so that electric current flows along the c axis.
摘要翻译：本发明提供一种具有高热电转换性能的热电转换装置。在该装置中，不同于本领域的普通知识的结构，电极被布置成电流沿分层物质的层间方向流动。在根据本发明的热电转换装置中，通过外延生长获得热电转换膜，并且通过交替地布置导电层和电绝缘层而形成; 导电层具有八面体晶体结构，其中过渡金属原子M位于其中心，氧原子位于其顶点; 并且电绝缘层包括金属元素或结晶金属氧化物。由导电层和电绝缘层制成的层状物质的c轴平行于衬底的面内方向，并且一对电极被布置成使得电流沿c轴流动。

5. 发明申请

US20060120205A1 Electro-resistance element and method of manufacturing the same 有权
标题翻译：电阻元件及其制造方法
公开(公告)号：US20060120205A1
公开(公告)日：2006-06-08
申请号：US11326520
申请日：2006-01-06
申请人： Akihiro Odagawa , Yasunari Sugita , Tsutomu Kanno , Akihiro Sakai , Hideaki Adachi
发明人： Akihiro Odagawa , Yasunari Sugita , Tsutomu Kanno , Akihiro Sakai , Hideaki Adachi
IPC分类号： G11C8/02
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2013/0054 , G11C2213/31 , G11C2213/71 , G11C2213/79 , H01L27/105 , H01L27/1052 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes: a multilayer structure including an upper electrode, a lower electrode, and an electro-resistance layer sandwiched by the electrodes, the multilayer structure disposed on a substrate; wherein the electro-resistance layer has a spinel structure, and a surface of the lower electrode that faces the electro-resistance layer is oxidized. The electro-resistance element can be manufactured by a manufacturing process at 400° C. or lower.
摘要翻译：提供了具有与常规元件不同的构造并且显示出优异的电阻变化特性的电阻元件。电阻元件具有两个或多个电阻值不同的状态，并且可以通过施加预定的电压或电流从两个或更多个状态之一切换到另一个状态。电阻元件包括：多层结构，其包括上电极，下电极和夹在电极之间的电阻层，所述多层结构设置在基板上; 其中所述电阻层具有尖晶石结构，并且所述下电极的面向所述电阻层的表面被氧化。电阻元件可以通过在400℃以下的制造工艺制造。

6. 发明授权

US07446391B2 Electro-resistance element and method of manufacturing the same 有权
标题翻译：电阻元件及其制造方法
公开(公告)号：US07446391B2
公开(公告)日：2008-11-04
申请号：US11326520
申请日：2006-01-06
申请人： Akihiro Odagawa , Yasunari Sugita , Tsutomu Kanno , Akihiro Sakai , Hideaki Adachi
发明人： Akihiro Odagawa , Yasunari Sugita , Tsutomu Kanno , Akihiro Sakai , Hideaki Adachi
IPC分类号： H01L21/20
CPC分类号： G11C11/5685 , G11C13/0007 , G11C13/004 , G11C2013/0054 , G11C2213/31 , G11C2213/71 , G11C2213/79 , H01L27/105 , H01L27/1052 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675 , H01L45/1683
摘要： An electro-resistance element that has a different configuration from conventional elements and shows outstanding resistance change characteristics is provided. An electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes: a multilayer structure including an upper electrode, a lower electrode, and an electro-resistance layer sandwiched by the electrodes, the multilayer structure disposed on a substrate; wherein the electro-resistance layer has a spinel structure, and a surface of the lower electrode that faces the electro-resistance layer is oxidized. The electro-resistance element can be manufactured by a manufacturing process at 400° C. or lower.
摘要翻译：提供了具有与常规元件不同的构造并且显示出优异的电阻变化特性的电阻元件。电阻元件具有两个或多个电阻值不同的状态，并且可以通过施加预定的电压或电流从两个或更多个状态之一切换到另一个状态。电阻元件包括：多层结构，其包括上电极，下电极和夹在电极之间的电阻层，所述多层结构设置在基板上; 其中所述电阻层具有尖晶石结构，并且所述下电极的面向所述电阻层的表面被氧化。电阻元件可以通过在400℃以下的制造工艺制造。

7. 发明授权

US07473612B2 Method for fabricating a variable-resistance element including heating a RMCoO3 perovskite structure in an oxygen atmosphere 有权
标题翻译：制造可变电阻元件的方法，包括在氧气氛中加热RMCoO3钙钛矿结构
公开(公告)号：US07473612B2
公开(公告)日：2009-01-06
申请号：US11417200
申请日：2006-05-04
申请人： Tsutomu Kanno , Akihiro Odagawa , Yasunari Sugita , Akihiro Sakai , Hideaki Adachi
发明人： Tsutomu Kanno , Akihiro Odagawa , Yasunari Sugita , Akihiro Sakai , Hideaki Adachi
IPC分类号： H01L21/20
CPC分类号： G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2213/31 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641 , H01L45/1675 , H01L45/1683
摘要： A method for fabricating a variable-resistance element, the resistance of a material layer being variable in accordance with an electric current or voltage applied across first and second electrodes, the method including: (1) a first electrode production step; (2) a step of forming the material layer on the first electrode, wherein the material layer comprises an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO3, wherein R is a rare-earth element and M is an alkaline-earth element; (3) an oxygen treatment step of heating the material layer in an oxygen atmosphere; (4) a step of forming the second electrode on the material layer that was subjected to the oxygen treatment step; and (5) a hydrogen treatment step of heating the material layer in a reducing atmosphere containing hydrogen.
摘要翻译：一种用于制造可变电阻元件的方法，所述材料层的电阻根据施加在第一和第二电极上的电流或电压而变化，所述方法包括：（1）第一电极制备步骤; （2）在第一电极上形成材料层的步骤，其中所述材料层包括具有由化学式RMCoO 3表示的钙钛矿结构的氧化物半导体，其中R是稀土元素，M是碱土元素 ; （3）在氧气氛中加热材料层的氧处理工序; （4）在进行氧处理工序的材料层上形成第2电极的工序; 和（5）在含氢还原气氛中加热该材料层的氢处理步骤。

8. 发明申请

US20060273877A1 Variable-resistance element and non-volatile memory using the same 有权
标题翻译：可变电阻元件和使用其的非易失性存储器
公开(公告)号：US20060273877A1
公开(公告)日：2006-12-07
申请号：US11417200
申请日：2006-05-04
申请人： Tsutomu Kanno , Akihiro Odagawa , Yasunari Sugita , Akihiro Sakai , Hideaki Adachi
发明人： Tsutomu Kanno , Akihiro Odagawa , Yasunari Sugita , Akihiro Sakai , Hideaki Adachi
IPC分类号： H01C10/34
CPC分类号： G11C13/0007 , G11C13/004 , G11C13/0069 , G11C2013/0054 , G11C2013/0073 , G11C2013/0078 , G11C2013/009 , G11C2213/31 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/147 , H01L45/1625 , H01L45/1641 , H01L45/1675 , H01L45/1683
摘要： The present invention provides a variable-resistance element in which deterioration in its capacity for resistance variation is suppressed, even when heat treatment is conducted in a reducing atmosphere, and a non-volatile memory using the same. Specifically, the present invention provides (1) a variable-resistance element provided with a material layer comprising an oxide semiconductor having a perovskite structure represented by the chemical formula RMCoO3 (wherein R is a rare-earth element and M is an alkaline-earth element) and first and second electrodes electrically connecting to the material layer, the resistance of the material layer being variable in accordance with an electric current or voltage applied across the first and second electrodes, and (2) a non-volatile memory comprising a transistor and the variable-resistance element, the transistor and the variable-resistance element being electrically connected.
摘要翻译：本发明提供一种可变电阻元件，即使在还原气氛中进行热处理也能够抑制其电阻变化能力的劣化，以及使用该可变电阻元件的非易失性存储器。具体而言，本发明提供（1）具有材料层的可变电阻元件，该材料层包含由化学式RMCoO 3（其中R是稀土元素）表示的具有钙钛矿结构的氧化物半导体和M是碱土元素）和电连接到材料层的第一和第二电极，材料层的电阻根据施加在第一和第二电极两端的电流或电压而变化，以及（2）a 包括晶体管和可变电阻元件的非易失性存储器，晶体管和可变电阻元件电连接。

9. 发明申请

US20060050549A1 Electro-resistance element and electro-resistance memory using the same 审中-公开
标题翻译：电阻元件和使用其的电阻存储器
公开(公告)号：US20060050549A1
公开(公告)日：2006-03-09
申请号：US11267198
申请日：2005-11-07
申请人： Hideaki Adachi , Yasunari Sugita , Akihiro Odagawa
发明人： Hideaki Adachi , Yasunari Sugita , Akihiro Odagawa
IPC分类号： G11C11/00
CPC分类号： G11C13/0007 , G11C2213/31 , G11C2213/79 , H01L27/2436 , H01L45/04 , H01L45/1233 , H01L45/1253 , H01L45/147 , H01L45/1625 , H01L45/1675
摘要： A electro-resistance element with good heat treatment stability under a hydrogen-containing atmosphere and a electro-resistance memory with good resistance change characteristics and productivity are provided. The electro-resistance element has two or more states in which electric resistance values are different, and is switchable from one of the states selected from the two or more states into another by application of a predetermined voltage or current. The electro-resistance element includes a pair of electrodes, and an oxide semiconductor layer sandwiched by the pair of electrodes and having a perovskite structure, and the conductivity type of the oxide semiconductor layer is n-type. The electro-resistance memory is provided with the electro-resistance element.
摘要翻译：提供了在含氢气氛下具有良好的热处理稳定性的电阻元件和具有良好的电阻变化特性和生产率的电阻记忆体。电阻元件具有电阻值不同的两个以上的状态，并且可以通过施加预定的电压或电流从从两个或更多个状态中选择的状态中的一个切换到另一状态。电阻元件包括一对电极和由一对电极夹持并具有钙钛矿结构的氧化物半导体层，氧化物半导体层的导电类型为n型。电阻存储器设置有电阻元件。

10. 发明授权

US06798620B2 Magneto-resistive element, magnetic head, and magnetic recording and reproduction apparatus 失效
标题翻译：磁电元件，磁头和磁记录和再现装置
公开(公告)号：US06798620B2
公开(公告)日：2004-09-28
申请号：US10441794
申请日：2003-05-20
申请人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
发明人： Masayoshi Hiramoto , Nozomu Matsukawa , Akihiro Odagawa , Hideaki Adachi , Kenji Iijima , Hiroshi Sakakima , Yasunari Sugita
IPC分类号： G11B5127
CPC分类号： B82Y25/00 , B82Y10/00 , G11B5/3903 , G11B5/3909 , G11B5/3916 , G11B2005/3996 , H01F10/324 , H01F10/3268 , H01F10/3272 , H01F10/3295
摘要： A magnetic head including a magnetic substrate for operating as a first electrode, a multi-layer film formed on a portion of the surface of the magnetic substrate an inter-layer insulating layer provided to cover side surfaces of the multi-layer film, a flux guide formed on surfaces of the multi-layer film and inter-layer insulating layers, a non-magnetic conductive layer formed on a surface of the flux guide, and a second electrode formed on a surface of the non-magnetic conductive layer, in which the multi-layer film includes a first magnetic layer formed on a portion of the surface of the magnetic substrate and includes a fixed layer, and a second magnetic layer including a non-magnetic layer formed on a surface of the first magnetic layer and a free layer formed on a surface of the non-magnetic layer.
摘要翻译：一种磁头，包括用作第一电极的磁性基板，在该磁性基板的一部分表面上形成的层间绝缘层，覆盖多层膜的侧表面的多层膜，形成在多层膜和层间绝缘层的表面上的引导件，形成在引导件的表面上的非磁性导电层和形成在非磁性导电层的表面上的第二电极，其中多层膜包括形成在磁性基板的表面的一部分上并包括固定层的第一磁性层和包括形成在第一磁性层的表面上的非磁性层的第二磁性层，层形成在非磁性层的表面上。

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