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1. 发明授权

US07889298B2 Transparent conductive film, and substrate, electronic device and liquid crystal display using the same 有权
标题翻译：透明导电膜和基板，电子器件和使用其的液晶显示器
公开(公告)号：US07889298B2
公开(公告)日：2011-02-15
申请号：US12094337
申请日：2006-10-31
申请人： Satoshi Umeno , Akira Kaijo , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative
发明人： Satoshi Umeno , Akira Kaijo , Kazuyoshi Inoue , Nobuo Tanaka
IPC分类号： G02F1/1333 , H01B1/08 , H05K1/09 , B05D5/12
CPC分类号： C01G15/00 , C01G19/006 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2006/40 , G02F1/13439
摘要： A transparent conductive film including an indium oxide, a tin oxide and at least one lanthanoid metal oxide, the film including a portion connected to a conductor, and at least the connection portion having crystallinity.
摘要翻译：包括氧化铟，氧化锡和至少一种镧系元素金属氧化物的透明导电膜，该膜包括连接到导体的部分，以及至少具有结晶性的连接部分。

2. 发明授权

US07648657B2 In Sm oxide sputtering target 有权
标题翻译：在Sm氧化物溅射靶中
公开(公告)号：US07648657B2
公开(公告)日：2010-01-19
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka, legal representative , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
发明人： Kazuyoshi Inoue , Nobuo Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano
IPC分类号： H01B1/08 , C23C14/08
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译：溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。相对于所有阳离子元素的总和为％以下。

3. 发明申请

US20100170696A1 SPUTTERING TARGET, TRANSPARENT CONDUCTIVE FILM AND TRANSPARENT ELECTRODE 有权
标题翻译：透射目标，透明导电膜和透明电极
公开(公告)号：US20100170696A1
公开(公告)日：2010-07-08
申请号：US12065405
申请日：2006-08-30
申请人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka , Akira Kaijo , Satoshi Umeno
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka , Akira Kaijo , Satoshi Umeno
IPC分类号： H01B5/00 , C23C14/34 , B22F3/12 , H01B13/00 , H01B1/02
CPC分类号： H01B1/02 , C03C17/3644 , C03C2217/94 , C03C2218/33 , C03C2218/34 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B2235/32 , C04B2235/3232 , C04B2235/3241 , C04B2235/3272 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/664 , C04B2235/72 , C04B2235/763 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/086 , C23C14/3414 , H01B13/00 , Y10T428/24777
摘要： A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).
摘要翻译：一种溅射靶，其由至少含有铟，锡和锌的氧化物的烧结体构成，并且包括Zn2SnO4的尖晶石结构化合物和In 2 O 3的菱沸石结构化合物。溅射靶包括铟，锡，锌和氧，只有通过X射线衍射（XRD）基本观察到由比克比结构化合物引起的峰。

4. 发明申请

US20100053523A1 TRANSPARENT CONDUCTIVE FILM, AND SUBSTRATE, ELECTRONIC DEVICE AND LIQUID CRYSTAL DISPLAY USING THE SAME 有权
标题翻译：透明导电膜和基板，电子器件和使用其的液晶显示器
公开(公告)号：US20100053523A1
公开(公告)日：2010-03-04
申请号：US12094337
申请日：2006-10-31
申请人： Satoshi Umeno , Akira Kaijo , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka
发明人： Satoshi Umeno , Akira Kaijo , Kazuyoshi Inoue , Nobuo Tanaka , Tokie Tanaka
IPC分类号： G02F1/1333 , H01B1/08 , H05K1/09 , B05D5/12
CPC分类号： C01G15/00 , C01G19/006 , C01P2002/72 , C01P2002/82 , C01P2002/84 , C01P2006/40 , G02F1/13439
摘要： A transparent conductive film including an indium oxide, a tin oxide and at least one lanthanoid metal oxide, the film including a portion connected to a conductor, and at least the connection portion having crystallinity.
摘要翻译：包括氧化铟，氧化锡和至少一种镧系金属氧化物的透明导电膜，该膜包括连接到导体的部分，以及至少具有结晶度的连接部分。

5. 发明授权

US08524123B2 Sputtering target, transparent conductive film and transparent electrode 有权
标题翻译：溅射靶，透明导电膜和透明电极
公开(公告)号：US08524123B2
公开(公告)日：2013-09-03
申请号：US12065405
申请日：2006-08-30
申请人： Koki Yano , Kazuyoshi Inoue , Akira Kaijo , Satoshi Umeno , Tokie Tanaka
发明人： Koki Yano , Kazuyoshi Inoue , Nobuo Tanaka , Akira Kaijo , Satoshi Umeno
IPC分类号： H01B1/02
CPC分类号： H01B1/02 , C03C17/3644 , C03C2217/94 , C03C2218/33 , C03C2218/34 , C04B35/453 , C04B35/457 , C04B35/6261 , C04B2235/32 , C04B2235/3232 , C04B2235/3241 , C04B2235/3272 , C04B2235/3281 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/3418 , C04B2235/5445 , C04B2235/656 , C04B2235/6562 , C04B2235/6567 , C04B2235/664 , C04B2235/72 , C04B2235/763 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/086 , C23C14/3414 , H01B13/00 , Y10T428/24777
摘要： A sputtering target which is composed of a sintered body of an oxide which contains at least indium, tin, and zinc and includes a spinel structure compound of Zn2SnO4 and a bixbyite structure compound of In2O3. A sputtering target includes indium, tin, zinc, and oxygen with only a peak ascribed to a bixbyite structure compound being substantially observed by X-ray diffraction (XRD).
摘要翻译：一种溅射靶，其由至少含有铟，锡和锌的氧化物的烧结体构成，并且包括Zn2SnO4的尖晶石结构化合物和In 2 O 3的菱沸石结构化合物。溅射靶包括铟，锡，锌和氧，只有通过X射线衍射（XRD）基本观察到由比克比结构化合物引起的峰。

6. 发明申请

US20090121199A1 IN SM OXIDE SPUTTERING TARGET 有权
标题翻译：氧化硅溅射靶
公开(公告)号：US20090121199A1
公开(公告)日：2009-05-14
申请号：US11995640
申请日：2006-06-21
申请人： Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
发明人： Kazuyoshi Inoue , Nobou Tanaka , Shigekazu Tomai , Masato Matsubara , Akira Kaijo , Koki Yano , Tokie Tanaka
IPC分类号： H01B1/08 , B28B1/00 , B29C43/02 , C07F17/00
CPC分类号： C23C14/3414 , C04B35/01 , C04B35/457 , C04B35/50 , C04B35/62655 , C04B35/6455 , C04B2235/3224 , C04B2235/3229 , C04B2235/3232 , C04B2235/3244 , C04B2235/3251 , C04B2235/3286 , C04B2235/3287 , C04B2235/3293 , C04B2235/604 , C04B2235/77 , C04B2235/786 , C04B2235/80 , C04B2235/96 , C23C14/08
摘要： A sputtering target which is formed of a sintered body including an oxide main components of which are In and Sm. A sputtering target in which a sintered body of an oxide including In and Sm as main components is doped with at least one element with an atomic valency of positive tetravalency or higher in an amount of 20 at. % or less relative to the total sum of all cation elements.
摘要翻译：溅射靶，其由包含氧化物主要成分为In和Sm的烧结体形成。一种溅射靶，其中包含In和Sm作为主要成分的氧化物的烧结体掺杂有至少一种元素，其中原子价为正四价或更高的20at。相对于所有阳离子元素的总和为％以下。

7. 发明授权

US06669830B1 Sputtering target, transparent conductive oxide, and process for producing the sputtering target 有权
标题翻译：溅射靶，透明导电氧化物，以及溅射靶的制造方法
公开(公告)号：US06669830B1
公开(公告)日：2003-12-30
申请号：US10089378
申请日：2002-03-29
申请人： Kazuyoshi Inoue , Tadao Shibuya , Akira Kaijo
发明人： Kazuyoshi Inoue , Tadao Shibuya , Akira Kaijo
IPC分类号： C23C1434
CPC分类号： C23C14/3414 , C03C2217/211 , C03C2217/216 , C03C2217/23 , C03C2218/154 , C04B35/01 , C04B35/453 , C04B35/457 , C04B35/6262 , C04B35/64 , C04B35/6455 , C04B2235/3284 , C04B2235/3286 , C04B2235/3293 , C04B2235/44 , C04B2235/441 , C04B2235/443 , C04B2235/449 , C04B2235/5436 , C04B2235/664 , C04B2235/763 , C04B2235/767 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/96 , C04B2235/963 , C04B2235/9646 , C04B2235/9653 , C23C14/086 , C23C14/3407 , G02F1/13439
摘要： In a sputtering target comprising at least indium oxide and zinc oxide, the atomic ratio represented by In/(In+Zn) is set to a value within the range of 0.75 to 0.97, a hexagonal layered compound represented by In2O3(ZnO)m wherein m is an integer of 2 to 20 is contained, and the crystal grain size of the hexagonal layered compound is set to a value of 5 &mgr;m or less.
摘要翻译：在至少包含氧化铟和氧化锌的溅射靶中，由In /（In + Zn）表示的原子比设定为0.75〜0.97的范围内的In2O3（ZnO）m表示的六方晶系化合物，其中， m为2〜20的整数，六方层状化合物的结晶粒径设定为5μm以下。

8. 发明申请

US20110197967A1 PHOTOVOLTAIC ELEMENT AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：光伏元件及其制造方法
公开(公告)号：US20110197967A1
公开(公告)日：2011-08-18
申请号：US13124902
申请日：2009-10-19
申请人： Akira Kaijo , Masashi Oyama
发明人： Akira Kaijo , Masashi Oyama
IPC分类号： H01L31/0224 , H01L31/18
CPC分类号： H01L31/1884 , H01L31/022466 , H01L31/022483 , H01L31/03923 , H01L31/046 , H01L31/0463 , Y02E10/541
摘要： On a p-type conductive light absorption layer provided by a chalcopyrite structure compound that is layered bridging a pair of backside electrode layers provided on a side of a glass substrate, a light-transmissive n-type buffer layer that forms a p-n junction with the light absorption layer is layered. A light-transmissive transparent electrode layer is layered on the buffer layer to extend from a side of the light absorption layer and the buffer layer to one of the pair of backside electrode layers. The transparent electrode layer is formed in an amorphous film containing indium oxide and zinc oxide as primary components, the transparent electrode layer exhibiting a film stress of ±1×109 Pa or less. A photovoltaic element can be favorably processed without causing cracking and damage even by an easily processable mechanical scribing, so that productivity can be enhanced and yield rate can be improved.
摘要翻译：在由布置在玻璃基板一侧的一对背面电极层上层叠的黄铜矿结构化合物提供的p型导电性光吸收层上，形成与该玻璃基板的pn结形成的透光性n型缓冲层光吸收层分层。透光透明电极层层叠在缓冲层上，从光吸收层和缓冲层的一侧延伸到一对背面电极层之一。透明电极层以含有氧化铟和氧化锌为主成分的非晶体膜形成，透明电极层的膜应力为±1×10 9 Pa以下。即使通过容易加工的机械划线也能够有利地进行光电元件的加工而不产生开裂和损伤，从而可以提高生产率，并且可以提高成品率。

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