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1. 发明申请

US20060006418A1 Semiconductor device having an improved voltage control oscillator circuit 有权
标题翻译：具有改进的压控振荡器电路的半导体器件
公开(公告)号：US20060006418A1
公开(公告)日：2006-01-12
申请号：US11175378
申请日：2005-07-07
申请人： Satoshi Suzuki , Takayuki Matsuzuka , Kenichiro Chomei
发明人： Satoshi Suzuki , Takayuki Matsuzuka , Kenichiro Chomei
IPC分类号： H01L29/739
CPC分类号： H01L27/0658 , H01L27/0808 , H01L29/93 , H03B5/1203 , H03B5/1231 , H03B5/1243 , H03B5/1296
摘要： A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The variable-capacitance element includes reversely serially connected PN junctions, and junctions are formed by a single common collector layer and separated base layers on the common collector layer. The capacitance of the variable-capacitance element is generated between respective base layers of the PN junctions with the common collector layer, and varies in correspondence with the voltage applied to the common collector layer.
摘要翻译：提供一种具有改进的压控振荡器电路的半导体器件。电压控制振荡器电路组合地包括单个半导体衬底上的可变电容元件和至少一个双极晶体管。可变电容元件包括反向串联连接的PN结，并且通过单个公共集电极层和公共集电极层上的分离的基极层形成结。可变电容元件的电容在与公共集电极层的PN结的各个基极层之间产生，并且与施加到公共集电极层的电压相对应地变化。

2. 发明授权

US07323763B2 Semiconductor device having an improved voltage controlled oscillator 有权
标题翻译：具有改进的压控振荡器的半导体器件
公开(公告)号：US07323763B2
公开(公告)日：2008-01-29
申请号：US11175378
申请日：2005-07-07
申请人： Satoshi Suzuki , Takayuki Matsuzuka , Kenichiro Chomei
发明人： Satoshi Suzuki , Takayuki Matsuzuka , Kenichiro Chomei
IPC分类号： H01L29/00
CPC分类号： H01L27/0658 , H01L27/0808 , H01L29/93 , H03B5/1203 , H03B5/1231 , H03B5/1243 , H03B5/1296
摘要： A semiconductor device having an improved voltage control oscillator circuit is provided. The voltage control oscillator circuit includes, in combination, a variable-capacitance element and at least one bipolar transistor on a single semiconductor substrate. The variable-capacitance element includes reversely serially connected PN junctions, and junctions are formed by a single common collector layer and separated base layers on the common collector layer. The capacitance of the variable-capacitance element is generated between respective base layers of the PN junctions with the common collector layer, and varies in correspondence with the voltage applied to the common collector layer.
摘要翻译：提供一种具有改进的压控振荡器电路的半导体器件。电压控制振荡器电路组合地包括单个半导体衬底上的可变电容元件和至少一个双极晶体管。可变电容元件包括反向串联连接的PN结，并且通过单个公共集电极层和公共集电极层上的分离的基极层形成结。可变电容元件的电容在与公共集电极层的PN结的各个基极层之间产生，并且与施加到公共集电极层的电压相对应地变化。

3. 发明申请

US20070290334A1 HIGH FREQUENCY SEMICONDUCTOR DEVICE 失效
标题翻译：高频半导体器件
公开(公告)号：US20070290334A1
公开(公告)日：2007-12-20
申请号：US11539884
申请日：2006-10-10
申请人： Kenichiro Chomei
发明人： Kenichiro Chomei
IPC分类号： H01L23/34
CPC分类号： H01L23/66 , H01L24/48 , H01L2223/6627 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/181 , H01L2924/1903 , H01L2924/3011 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has a mounting substrate and a semiconductor package mounted on the mounting substrate. The mounting substrate has a substrate body, input/output line conductors on the upper surface of the substrate body, a front-face grounding conductor on the upper surface of the substrate body, spaced from the input/output line conductors, and a lower surface grounding conductor formed on the lower surface of the substrate body and electrically connected to the front-face grounding conductor. The semiconductor package has input/output terminals electrically connected to end portions of the input/output line conductors, a grounding terminal electrically connected to the front-face grounding conductor, and a semiconductor element die-bonded on the grounding terminal and electrically connected to the input/output terminals. The input/output line conductors and the lower surface grounding conductor form micro-strip line conductors; and the front-face grounding conductor surrounds the end portions of the input/output line conductors with arch shapes.
摘要翻译：半导体器件具有安装基板和安装在安装基板上的半导体封装。安装基板具有基板主体，在基板主体的上表面上的输入/输出线导体，与输入/输出线导体间隔开的基板主体上表面上的正面接地导体，以及下表面接地导体形成在基板主体的下表面上并电连接到前面接地导体。该半导体封装具有电连接到输入/输出线路导体的端部的输入/输出端子，与前面接地导体电连接的接地端子，以及裸露接地在接地端子上的电连接到输入/输出端子。输入/输出线导体和下表面接地导体形成微带线导体; 并且前面接地导体围绕具有拱形的输入/输出线导体的端部。

4. 发明授权

US07365415B2 High frequency semiconductor device 失效
标题翻译：高频半导体器件
公开(公告)号：US07365415B2
公开(公告)日：2008-04-29
申请号：US11539884
申请日：2006-10-10
申请人： Kenichiro Chomei
发明人： Kenichiro Chomei
IPC分类号： H01L23/528
CPC分类号： H01L23/66 , H01L24/48 , H01L2223/6627 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/181 , H01L2924/1903 , H01L2924/3011 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device has a mounting substrate and a semiconductor package mounted on the mounting substrate. The mounting substrate has a substrate body, input/output line conductors on the upper surface of the substrate body, a front-face grounding conductor on the upper surface of the substrate body, spaced from the input/output line conductors, and a lower surface grounding conductor formed on the lower surface of the substrate body and electrically connected to the front-face grounding conductor. The semiconductor package has input/output terminals electrically connected to end portions of the input/output line conductors, a grounding terminal electrically connected to the front-face grounding conductor, and a semiconductor element die-bonded on the grounding terminal and electrically connected to the input/output terminals. The input/output line conductors and the lower surface grounding conductor form micro-strip line conductors; and the front-face grounding conductor surrounds the end portions of the input/output line conductors with arch shapes.
摘要翻译：半导体器件具有安装基板和安装在安装基板上的半导体封装。安装基板具有基板主体，在基板主体的上表面上的输入/输出线导体，与输入/输出线导体间隔开的基板主体上表面上的正面接地导体，以及下表面接地导体形成在基板主体的下表面上并电连接到前面接地导体。该半导体封装具有电连接到输入/输出线路导体的端部的输入/输出端子，与前面接地导体电连接的接地端子，以及裸露接地在接地端子上的电连接到输入/输出端子。输入/输出线导体和下表面接地导体形成微带线导体; 并且前面接地导体围绕具有拱形的输入/输出线导体的端部。

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