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1. 发明授权

US07545013B2 Reconfigurable logic circuit using a transistor having spin-dependent transfer characteristics 失效
标题翻译：使用具有自旋相关传输特性的晶体管的可重构逻辑电路
公开(公告)号：US07545013B2
公开(公告)日：2009-06-09
申请号：US10550652
申请日：2004-03-26
申请人： Satoshi Sugahara , Tomohiro Matsuno , Masaaki Tanaka
发明人： Satoshi Sugahara , Tomohiro Matsuno , Masaaki Tanaka
IPC分类号： H01L29/739
CPC分类号： H03K19/0944 , H01L29/66984
摘要： A nonvolatilely reconfigurable logical circuit is built. It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of each transistor in accordance with the magnetization states of Tr1, Tr2, Tr5, and Tr8 which are spin MOSFETs, it is possible to reconfigure all the two-input symmetric functions AND/OR/XOR/NAND/NOR/XNOR/“1”/“0”. Since it is possible to constitute the logical function by a small number of non-volatile elements, it is possible to reduce the chip area, thereby increasing the speed and reducing the power consumption.
摘要翻译：构建了非易失性可重构逻辑电路。它是基于使用自旋MOSFET的CMOS配置的可重构逻辑电路。通过根据作为自旋MOSFET的Tr1，Tr2，Tr5和Tr8的磁化状态改变每个晶体管的传输特性，可以重新配置所有双输入对称函数AND / OR / XOR / NAND / NOR / XNOR /“1”/“0”。由于可以通过少量非易失性元件构成逻辑功能，因此可以减少芯片面积，从而提高速度并降低功耗。

2. 发明申请

US20060114018A1 Reconfigurable logical circuit using transistor having spi-dependent transmission characteristics 失效
标题翻译：使用具有spi相关传输特性的晶体管可重构逻辑电路
公开(公告)号：US20060114018A1
公开(公告)日：2006-06-01
申请号：US10550652
申请日：2004-03-26
申请人： Satoshi Sugahara , Tomohiro Matsuno , Masaaki Tanaka
发明人： Satoshi Sugahara , Tomohiro Matsuno , Masaaki Tanaka
IPC分类号： H03K19/23
CPC分类号： H03K19/0944 , H01L29/66984
摘要： A nonvolatilely reconfigurable logical circuit is built It is a reconfigurable logical circuit based on the CMOS configuration using the spin MOSFET. By changing the transmission characteristic of each transistor in accordance with the magnetization states of Tr1, Tr2, Tr5, and Tr8 which are spin MOSFETs, it is possible to reconfigure all the two-input symmetric functions AND/OR/XOR/NAND/NOR/XNOR/“1”/“0”. Since it is possible to constitute the logical function by a small number of non-volatile elements, it is possible to reduce the chip area, thereby increasing the speed and reducing the power consumption.
摘要翻译：构建了非易失性可重构的逻辑电路它是一种基于使用自旋MOSFET的CMOS配置的可重构逻辑电路。通过根据作为自旋MOSFET的Tr 1，Tr 2，Tr 5和Tr 8的磁化状态改变每个晶体管的透射特性，可以将所有双输入对称函数AND / OR / XOR / NAND / NOR / XNOR /“1”/“0”。由于可以通过少量非易失性元件构成逻辑功能，因此可以减少芯片面积，从而提高速度并降低功耗。

3. 发明申请

US20060138502A1 Field-effect transistor with spin-dependent transmission characteristics and non-volatile memory using same 有权
标题翻译：具有自旋相关传输特性的场效应晶体管和使用其的非易失性存储器
公开(公告)号：US20060138502A1
公开(公告)日：2006-06-29
申请号：US10547844
申请日：2004-01-23
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/94
CPC分类号： H01L29/47 , B82Y10/00 , G11C11/161 , H01L27/228 , H01L29/66984
摘要： When a gate voltage VGS is applied, the Schottky barrier width due to the metallic spin band in the ferromagnetic source is decreased, and up-spin electrons from the metallic spin band are tunnel-injected into the channel region. However, down-spin electrons from the nonmagnetic contact (3b) are not injected because of the energy barrier due to semiconductive spin band of the ferromagnetic source (3a). That is, only up-spin electrons are injected into the channel layer from the ferromagnetic source (3a). If the ferromagnetic source (3a) and the ferromagnetic drain (5a) are parallel magnetized, up-spin electrons are conducted through the metallic spin band of the ferromagnetic drain to become the drain current. Contrarily, if the ferromagnetic source (3a) and the (ferromagnetic drain (5a) are antiparallel magnetized, up-spin electrons cannot be conducted through the ferromagnetic drain (5a) because of the energy barrier Ec due to the semiconductive spin band in the ferromagnetic drain (5a). Thus, a high-performance high-degree of integration nonvolatile memory composed of MISFETs operating on the above operating principle can be fabricated.
摘要翻译：当施加栅极电压V GS时，由铁磁源中的金属自旋带引起的肖特基势垒宽度减小，并且来自金属自旋带的向上自旋电子被隧道注入通道地区。然而，由于由铁磁源（3a）的半导电自旋带导致的能量势垒，来自非磁性接触（3b）的下旋电子不被注入。也就是说，只有上自旋电子从铁磁源（3a）注入到沟道层中。如果铁磁源（3a）和铁磁性漏极（5a）平行磁化，则上旋电子通过铁磁性漏极的金属自旋带传导成漏极电流。相反，如果铁磁源（3a）和（铁磁性漏极（5a））反平行磁化，则由于半导体自旋带导致的能量势垒Ec，上升自旋电子不能通过铁磁性漏极（5a）传导在铁磁性漏极（5a）中，可以制造以上述工作原理工作的由MISFET组成的高性能高集成度非易失性存储器。

4. 发明授权

US08026563B2 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors 有权
公开(公告)号：US08026563B2
公开(公告)日：2011-09-27
申请号：US12923450
申请日：2010-09-22
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L29/66984 , G11C11/15 , G11C11/16 , H01L29/73 , H01L29/778 , H01L29/78 , H01L43/08
摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

5. 发明申请

US20110031545A1 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors 有权
标题翻译：基于自旋滤波器效应的旋转晶体管，以及使用自旋晶体管的非易失性存储器
公开(公告)号：US20110031545A1
公开(公告)日：2011-02-10
申请号：US12923450
申请日：2010-09-22
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , G11C11/15 , G11C11/16 , H01L29/73 , H01L29/778 , H01L29/78 , H01L43/08
摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.
摘要翻译：自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。还提供了包括这种自旋晶体管的存储元件。

6. 发明授权

US07714400B2 Tunnel transistor having spin-dependent transfer characteristics and non-volatile memory using the same 有权
标题翻译：具有自旋相关传输特性的隧道晶体管和使用其的非易失性存储器
公开(公告)号：US07714400B2
公开(公告)日：2010-05-11
申请号：US11979346
申请日：2007-11-01
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/70
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01F1/405 , H01F10/193 , H01L27/228 , H01L29/66984
摘要： A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.
摘要翻译：其沟道区域是铁磁半导体的MISFET具有能够通过栅极电压来控制漏极电流的特征，并且可以通过铁磁通道区域中的相对磁化方向和铁磁源（或铁磁性漏极，或铁磁源和铁磁性漏极）。结果，可以以相对磁化方向的形式存储二进制信息，并且电检测相对磁化方向。如果磁性由铁磁半导体的沟道区域的电场效应控制，则可以大大减少重写信息所需的电流。因此，MISFET可以构成适合于高密度集成的高性能非易失性存储单元。

7. 发明申请

US20060118839A1 Tunnel transistor having spin-dependent transfer characteristics and nonvolatile memory using same 有权
标题翻译：具有自旋相关传输特性的隧道晶体管和使用其的非易失性存储器
公开(公告)号：US20060118839A1
公开(公告)日：2006-06-08
申请号：US10551802
申请日：2004-03-30
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/94
CPC分类号： H01F10/3254 , B82Y10/00 , B82Y25/00 , G11C11/16 , H01F1/405 , H01F10/193 , H01L27/228 , H01L29/66984
摘要： A MISFET the channel region of which is a ferromagnetic semi-conductor has a feature that the drain current can be controlled by the gate voltage and a feature that the transfer conductance can be controlled by the relative directions of magnetization in the ferromagnetic channel region and the ferromagnetic source (or the ferromagnetic drain, or both the ferromagnetic source and ferromagnetic drain). As a result, binary information can be stored in the form of the relative magnetization directions, and the relative magnetization directions are electrically detected. If the magnetism is controlled by the electric field effect of the channel region of a ferromagnetic semiconductor, the current needed to rewrite the information can be greatly reduced. Thus, the MISFET can constitute a high-performance non-volatile memory cell suited to high-density integration.
摘要翻译：其沟道区域是铁磁半导体的MISFET具有能够通过栅极电压来控制漏极电流的特征，并且可以通过铁磁通道区域中的相对磁化方向和铁磁源（或铁磁性漏极，或铁磁源和铁磁性漏极）。结果，可以以相对磁化方向的形式存储二进制信息，并且电检测相对磁化方向。如果磁性由铁磁半导体的沟道区域的电场效应控制，则可以大大减少重写信息所需的电流。因此，MISFET可以构成适合于高密度集成的高性能非易失性存储单元。

8. 发明授权

US07671433B2 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors 有权
标题翻译：基于自旋滤波器效应的旋转晶体管，以及使用自旋晶体管的非易失性存储器
公开(公告)号：US07671433B2
公开(公告)日：2010-03-02
申请号：US11979221
申请日：2007-10-31
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L29/66984 , G11C11/15 , G11C11/16 , H01L29/73 , H01L29/778 , H01L29/78 , H01L43/08
摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.
摘要翻译：自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。还提供了包括这种自旋晶体管的存储元件。

9. 发明授权

US07423327B2 Spin transistor based on the spin-filter effect and a non-volatile memory using spin transistors 有权
标题翻译：基于自旋滤波器效应的旋转晶体管和使用自旋晶体管的非易失性存储器
公开(公告)号：US07423327B2
公开(公告)日：2008-09-09
申请号：US10522241
申请日：2003-07-25
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/02
CPC分类号： H01L29/66984 , G11C11/15 , G11C11/16 , H01L29/73 , H01L29/778 , H01L29/78 , H01L43/08
摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.
摘要翻译：自旋晶体管包括自旋注入器，用于从与形成第一铁磁阻挡层的带边缘的平行于自旋带的自旋的第一非磁性电极载体作为热载流子注入到第二非磁性电极层。它还包括自旋分析器，由此，由于在第二铁磁阻挡层的带边缘处的自旋分裂，当喷射到第二铁磁阻挡层中的载流子的自旋方向时，自旋极化热载流子被输送到第三非磁性电极非磁性电极与第二铁磁阻挡层的带边缘处的自旋带的自旋平行，而在反向并联旋转的情况下，热载流子不被传送到第三非磁性电极。还提供了包括这种自旋晶体管的存储元件。

10. 发明申请

US20080067501A1 Spin transistor based on the spin-filter effect, and non-volatile memory using spin transistors 有权
公开(公告)号：US20080067501A1
公开(公告)日：2008-03-20
申请号：US11979220
申请日：2007-10-31
申请人： Satoshi Sugahara , Masaaki Tanaka
发明人： Satoshi Sugahara , Masaaki Tanaka
IPC分类号： H01L29/82
CPC分类号： H01L29/66984 , G11C11/15 , G11C11/16 , H01L29/73 , H01L29/778 , H01L29/78 , H01L43/08
摘要： A spin transistor comprises a spin injector for injecting, from a first nonmagnetic electrode carriers with a spin parallel to a spin band forming the band edge of a first ferromagnetic barrier layer, to a second nonmagnetic electrode layer, as hot carriers. It also comprises a spin analyzer whereby, due to spin-splitting at the band edge of a second ferromagnetic barrier layer, the spin-polarized hot carriers are transported to a third nonmagnetic electrode when the direction of the spin of the carriers injected into the second nonmagnetic electrode is parallel to that of the spin of the spin band at the band edge of the second ferromagnetic barrier layer, whereas the hot carriers are not transported to the third nonmagnetic electrode in the case of antiparallel spin. A memory element is also provided that comprises such a spin transistor.

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